Preparação e estudo termoanalítico dos 2-clorobenzalpiruvatos de alumínio, de gálio, de índio e de escândio no estado sólido

Pós-graduação em Química - IQ

Study of the oxygen vacancy influence on magnetic properties of Fe- and Co-doped SnO2 diluted alloys

Transition-metal (TM)-doped diluted magnetic oxides (DMOs) have attracted attention from both experimental and theoretical points of view due to their potential use in spintronics towards new nanostructured devices and new technologies. In the present work, we study the magnetic properties of Sn0.96TM0.04O2 and Sn0.96TM0.04O1.98(V (O))(0.02), where TM = Fe and Co, focusing in particular in the role played by the presence of O vacancies nearby the TM. The calculated total energy as a function of the total magnetic moment per cell shows a magnetic metastability, corresponding to a ground state, respectively, with 2 and 1 mu(B)/cell, for Fe and Co. Two metastable states, with 0 and 4 mu(B)/cell were found for Fe, and a single value, 3 mu(B)/cell, for Co. The spin-crossover energies (E (S)) were calculated. The values are E (S) (0/2) = 107 meV and E (S) (4/2) = 25 meV for Fe. For Co, E (S) (3/1) = 36 meV. By creating O vacancies close to the TM site, we show that the metastablity and E (S) change. For iron, a new state appears, and the state with zero magnetic moment disappears. The ground state is 4 mu(B)/cell instead of 2 mu(B)/cell, and the energy E (S) (2/4) is 30 meV. For cobalt, the ground state is then found with 3 mu(B)/cell and the metastable state with 1 mu(B)/cell. The spin-crossover energy E (S) (1/3) is 21 meV. Our results suggest that these materials may be used in devices for spintronic applications that require different magnetization states.

Produção e análise do desempenho óptico e elétrico de filmes finos de SnO2:F para aplicações fotovoltaicas

Conselho Nacional de Desenvolvimento Científico e Tecnológico - CNPq

Simultaneous observation of current oscillations and porous film growth during anodization of InP

The observation of spontaneous oscillations in current during the anodization of InP in relatively high concentrations of KOH electrolytes is reported. Oscillations were observed under potential sweep and constant potential conditions. Well-defined oscillations are observed during linear potential sweeps of InP in 5 mol dm-3 KOH to potentials above ∼1.7 V (SCE) at scan rates in the range of 50 to 500 mV s-1. The oscillations observed exhibit an asymmetrical current versus potential profile, and the charge per cycle was found to increase linearly with potential. More complex oscillatory behavior was observed under constant potential conditions. Periodic damped oscillations are observed in high concentrations of electrolyte whereas undamped sinusoidal oscillations are observed in relatively lower concentrations. In both cases, the anodization of InP results in porous InP formation, and the current in the oscillatory region corresponds to the cyclical effective area changes due to pitting dissolution of the InP surface with the coincidental growth of a thick porous In2O3 film.

Electrochemical pore formation on InP in alkaline solutions

The surface properties of InP electrodes were examined following anodization in (NH4)2S and KOH electrolytes. In both solutions, the observation of current peaks in the cyclic voltammetric curves was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution, revealed surface pitting and TEM micrographs revealed the porous nature of the film formed on top of the pitted substrate. After anodization in the KOH electrolyte, TEM images revealed that a porous layer extending 500 nm into the substrate had been formed. Analysis of the composition of the anodic products indicates the presence of In2S3 in films grown in (NH4)2S and an In2O3 phase within the porous network formed in KOH.

Growth and characterization of anodic Films on InP in KOH and (NH4)2S

The current-voltage characteristics of InP were investigated in (NH4)2S and KOH electrolytes. In both solutions, the observation of current peaks in the cyclic voltammetric curves was attributed to the growth of passivating films. The relationship between the peak currents and the scan rates suggests that the film formation process is diffusion controlled in both cases. The film thickness required to inhibit current flow was found to be much lower on samples anodized in the sulphide solution. Focused ion beam (FIB) secondary electron images of the surface films show that film cracking of the type reported previously for films grown in (NH4)2S is also observed for films grown in KOH. X-ray and electron diffraction measurements indicate the presence of In2O3 and InPO4 in films grown in KOH and In2S3 in films grown in (NH4)2S.

Fabricación y caracterización de películas delgadas de óxidos transparentes con aplicaciones ópticas.

Los óxidos transparentes conductores (TCO′ s) son materiales compuestos conformados por oxígeno y un metal, que presentan una combinación única de alta estabilidad química, alta concentración electrónica y alta transparencia óptica. Por esta razón, el procesamiento de TCO′ s en película delgada va orientado hacia aplicaciones específicas tales como ventanas ópticas en celdas solares, sensores de gases, electrodos en dispositivos de pantallas planas, ventanas inteligentes. En este proyecto se trabajó en la síntesis experimental de dos TCO′ s relevantes tanto en investigación fundamental como en aplicaciones tecnológicas: el óxido de indio (In2O3) y el óxido de estaño (SnO2). Ambos TCO′ s se depositaron por la técnica de erosión iónica reactiva por corriente directa (DC). Para el análisis de las películas se utilizaron varias técnicas de caracterización: difracción de rayos X, espectroscopia UV-Visible, resistividad eléctrica, efecto Hall, así como microscopías electrónica de barrido y de fuerza atómica. Se fabricó también una bicapa de In2O3/SnO2, la cual se caracterizó además con espectroscopia de fotoemisión de rayos X (XPS).En esta tesis se reporta por primera vez la síntesis y caracterización de esta bicapa, la cual abre una línea de investigación en el área de interfaces. Asimismo, se desarrolló e implementó un procedimiento, basado en los modelos ópticos, tal que permite obtener parámetros que se utilizan para evaluar a cualquier película delgada TCO como potencial metamaterial. Las propiedades de las muestras se analizaron en función de la temperatura aplicada post-depósito: temperatura ambiente (TA), 100oC, 200oC, 300oC, bajo una atmósfera de argón o argón-oxígeno. Los resultados confirman que las películas presentan un crecimiento de tipo poli cristalino. Además, la calidad cristalina tiende a incrementarse como función del incremento de la temperatura. El In2O3 creció con estructura cúbica bcc (a=10.11 ˚A, ICDD #71-2195). A partir de 200C, se detectaron trazas de la fase romboédrica (a=5.490 ˚A, c=14.520 ˚A, ICDD #73-1809). Asimismo, el SnO2 creció con estructura tetragonal (a = 4.737 ˚A, c = 3.186 ˚A, ICDD #88-0287). Las películas de In2O3 poseen una transparencia promedio del 90 % en una ventana de 500 nm a 1100 nm. El borde de absorción se recorre al azul como función de la temperatura, de Eg=3.3 eV a Eg=3.7 eV por el efecto Burstein-Moss. Por otra parte, la bicapa presentó una interfaz claramente definida, sin difusión de especies metálicas. Al incrementarse la temperatura, de TA a 400oC, se detectaron dos fases de óxido de estaño: SnO2 y SnO, en un porcentaje atómico de ≈70 %:30 %, respectivamente. Se concluye que los parámetros y valores obtenidos de las películas como son el texturizado y espesor homogéneo, alta transparencia, crecimiento preferencial, ancho prohibido y resistividad eléctrica, son comparables a los que se requieren del In2O3 y SnO2 en película delgada para aplicaciones optoelectrónicas.