The electric field effect on spin injection in tunneling regime

Using the quantum tunneling theory, we investigate the spin-dependent transport properties of the ferromagnetic metal/Schottky barrier/semiconductor heterojunction under the influence of an external electric field. It is shown that increasing the electric field, similar to increasing the electron density in semiconductor, will result in a slight enhancement of spin injection in tunneling regime, and this enhancement is significantly weakened when the tunneling Schottky barrier becomes stronger. Temperature effect on spin injection is also discussed. (C) 2003 Elsevier B.V. All rights reserved.

Self-sustained clusters and ergodicity breaking in spin models

Self-sustained spin clusters are analytically linked to ergodicity breaking in fully connected Ising and Sherrington-Kirkpatick (SK) models, relating the less understood spin space to the well understood state space. This correspondence is established through the absence of clusters in the paramagnetic phase, the presence of one dominant cluster in the Ising ferromagnet, and the formation of nontrivial clusters in SK spin glass. Yet unobserved phenomena are also revealed such as a first order phase transition in cluster sizes in the SK ferromagnet. The method could be adapted to investigate other spin models. © 2013 American Physical Society.

Hydrodynamics of domain walls in ferroelectrics and multiferroics: Impact on memory devices

The standard “Kittel Law” for the thickness and shape of ferroelectric, ferroelastic, or ferromagnet domains assumes mechanical equilibrium. The present paper shows that such domains may be highly nonequilibrium, with unusual thicknesses and shapes. In lead germanate and multiferroic lead zirconate titanate iron tantalate domain wall instabilities resemble hydrodynamics (Richtmyer–Meshkov and Helfrich–Hurault, respectively).

Fabrication and characterization of hybrid ferromagnetic-organic heterostructures for spintronics application

Recent research in the field of organic spintronics highlighted the peculiar spin-dependent properties of the interface formed by an organic semiconductor (OSC) chemisorbed over a 3d ferromagnetic metal, also known as spinterface. The hybridization between the molecular and metallic orbitals, typically π orbitals of the molecule and the d orbitals of the ferromagnet, give rise to spin dependent properties that were not expected by considering the single components of interfaces, as for example the appearance of a magnetic moment on non-magnetic molecules or changes in the magnetic behavior of the ferromagnet. From a technological viewpoint these aspects provide novel engineering schemes for spin memory and for spintronics devices, featuring unexpected interfacial magnetoresistance, spin-filtering effects and even modulated magnetic anisotropy. Applications of these concepts to devices require nevertheless to transfer the spinterface effects from an ideal interface to room temperature operating thin films. In this view, my work presents for the first time how spinterface effects can be obtained even at room temperature on polycrystalline ferromagnetic Co thin films interfaced with organic molecules. The considered molecules were commercial and widely used in the field of organic electronics: Fullerene (C60), Gallium Quinoline (Gaq3) and Sexithiophene (T6). An increase of coercivity, up to 100% at room temperature, has been obtained on the Co ultra-thin films by the deposition of an organic molecule. This effect is accompanied by a change of in-plane anisotropy that is molecule-dependent. Moreover the Spinterface effect is not limited to the interfacial layer, but it extends throughout the whole thickness of the ferromagnetic layer, posing new questions on the nature of the 3d metal-molecule interaction.