Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach

We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration

Research and development of III-V semiconductor surfaces for improved device interfaces

This thesis is devoted to understanding and improving technologically important III-V compound semiconductor (e.g. GaAs, InAs, and InSb) surfaces and interfaces for devices. The surfaces and interfaces of crystalline III-V materials have a crucial role in the operation of field-effect-transistors (FET) and highefficiency solar-cells, for instance. However, the surfaces are also the most defective part of the semiconductor material and it is essential to decrease the amount of harmful surface or interface defects for the next-generation III-V semiconductor device applications. Any improvement in the crystal ordering at the semiconductor surface reduces the amount of defects and increases the material homogeneity. This is becoming more and more important when the semiconductor device structures decrease to atomic-scale dimensions. Toward that target, the effects of different adsorbates (i.e., Sn, In, and O) on the III-V surface structures and properties have been investigated in this work. Furthermore, novel thin-films have been synthesized, which show beneficial properties regarding the passivation of the reactive III-V surfaces. The work comprises ultra-high-vacuum (UHV) environment for the controlled fabrication of atomically ordered III-V(100) surfaces. The surface sensitive experimental methods [low energy electron diffraction (LEED), scanning tunneling microscopy/spectroscopy (STM/STS), and synchrotron radiation photoelectron spectroscopy (SRPES)] and computational density-functionaltheory (DFT) calculations are utilized for elucidating the atomic and electronic properties of the crucial III-V surfaces. The basic research results are also transferred to actual device tests by fabricating metal-oxide-semiconductor capacitors and utilizing the interface sensitive measurement techniques [capacitance voltage (CV) profiling, and photoluminescence (PL) spectroscopy] for the characterization. This part of the thesis includes the instrumentation of home-made UHV-compatible atomic-layer-deposition (ALD) reactor for growing good quality insulator layers. The results of this thesis elucidate the atomic structures of technologically promising Sn- and In-stabilized III-V compound semiconductor surfaces. It is shown that the Sn adsorbate induces an atomic structure with (1×2)/(1×4) surface symmetry which is characterized by Sn-group III dimers. Furthermore, the stability of peculiar ζa structure is demonstrated for the GaAs(100)-In surface. The beneficial effects of these surface structures regarding the crucial III-V oxide interface are demonstrated. Namely, it is found that it is possible to passivate the III-V surface by a careful atomic-scale engineering of the III-V surface prior to the gate-dielectric deposition. The thin (1×2)/(1×4)-Sn layer is found to catalyze the removal of harmful amorphous III-V oxides. Also, novel crystalline III-V-oxide structures are synthesized and it is shown that these structures improve the device characteristics. The finding of crystalline oxide structures is exploited by solving the atomic structure of InSb(100)(1×2) and elucidating the electronic structure of oxidized InSb(100) for the first time.

Synthesis, characterization and chemical sensor application of conducting polymers

Polymeric materials that conduct electricity are highly interesting for fundamental studies and beneficial for modern applications in e.g. solar cells, organic field effect transistors (OFETs) as well as in chemical and bio‐sensing. Therefore, it is important to characterize this class of materials with a wide variety of methods. This work summarizes the use of electrochemistry also in combination with spectroscopic methods in synthesis and characterization of electrically conducting polymers and other π‐conjugated systems. The materials studied in this work are intended for organic electronic devices and chemical sensors. Additionally, an important part of the presented work, concerns rational approaches to the development of water‐based inks containing conducting particles. Electrochemical synthesis and electroactivity of conducting polymers can be greatly enhanced in room temperature ionic liquids (RTILs) in comparison to conventional electrolytes. Therefore, poly(para‐phyenylene) (PPP) was electrochemically synthesized in the two representative RTILs: bmimPF6 and bmiTf2N (imidazolium and pyrrolidinium‐based salts, respectively). It was found that the electrochemical synthesis of PPP was significantly enhanced in bmimPF6. Additionally, the results from doping studies of PPP films indicate improved electroactivity in bmimPF6 during oxidation (p‐doping) and in bmiTf2N in the case of reduction (n‐doping). These findings were supported by in situ infrared spectroscopy studies. Conducting poly(benzimidazobenzophenanthroline) (BBL) is a material which can provide relatively high field‐effect mobility of charge carriers in OFET devices. The main disadvantage of this n‐type semiconductor is its limited processability. Therefore in this work BBL was functionalized with poly(ethylene oxide) PEO, varying the length of side chains enabling water dispersions of the studied polymer. It was found that functionalization did not distract the electrochemical activity of the BBL backbone while the processability was improved significantly in comparison to conventional BBL. Another objective was to study highly processable poly(3,4‐ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) water‐based inks for controlled patterning scaled‐down to nearly a nanodomain with the intention to fabricate various chemical sensors. Developed PEDOT:PSS inks greatly improved printing of nanoarrays and with further modification with quaternary ammonium cations enabled fabrication of PEDOT:PSS‐based chemical sensors for lead (II) ions with enhanced adhesion and stability in aqueous environments. This opens new possibilities for development of PEDOT:PSS films that can be used in bio‐related applications. Polycyclic aromatic hydrocarbons (PAHs) are a broad group of π‐conjugated materials consisting of aromatic rings in the range from naphthalene to even hundred rings in one molecule. The research on this type of materials is intriguing, due to their interesting optical properties and resemblance of graphene. The objective was to use electrochemical synthesis to yield relatively large PAHs and fabricate electroactive films that could be used as template material in chemical sensors. Spectroscopic, electrochemical and electrical investigations evidence formation of highly stable films with fast redox response, consisting of molecules with 40 to 60 carbon atoms. Additionally, this approach in synthesis, starting from relatively small PAH molecules was successfully used in chemical sensor for lead (II).

Reducing contact resistance in graphene devices

In this thesis, the contact resistance of graphene devices was investigated because high contact resistance is detrimental to the performance of graphene field-effect transistors (GFET). Method for increasing so-called edge-contact area was applied in device fabrication process, as few nanometers thick Ni layer was used as a catalytic etchant during the annealing process. Finally, Ni was also used as a metal for contact. GFETs were fabricated using electron beam lithography using graphene fabricated by chemical vapor deposition (CVD). Critical part of the fabrication process was to preserve the high quality of the graphene channel while etching the graphene at contact areas with Ni during the annealing. This was achieved by optimizing the combination of temperature and gas flows. The structural properties of graphene were studied using scanning electron microscopy, scanning confocal μ-Raman spectroscopy and optical microscopy. Evaluation of electric transport properties including contact resistance was carried out by transmission line method and four-probe method. The lowest contact resistance found was about at 350 Ωμm. In addition, different methods to transfer CVD graphene synthesized on copper were studied. Typical method using PMMA as a supporting layer leaves some residues after its removal, thus effecting on the performance of a graphene devices. In a metal assisted transfer method, metal is used as an interfacial layer between PMMA and graphene. This allows more effective removal of PMMA. However, Raman spectra of graphene transferred by metal assisted method showed somewhat lower quality than the PMMA assisted method

Spectroscopic Studies of III-V Semiconductor Materials for Improved Devices

Defects in semiconductor crystals and at their interfaces usually impair the properties and the performance of devices. These defects include, for example, vacancies (i.e., missing crystal atoms), interstitials (i.e., extra atoms between the host crystal sites), and impurities such as oxygen atoms. The defects can decrease (i) the rate of the radiative electron transition from the conduction band to the valence band, (ii) the amount of charge carriers, and (iii) the mobility of the electrons in the conduction band. It is a common situation that the presence of crystal defects can be readily concluded as a decrease in the luminescence intensity or in the current flow for example. However, the identification of the harmful defects is not straightforward at all because it is challenging to characterize local defects with atomic resolution and identification. Such atomic-scale knowledge is however essential to find methods for reducing the amount of defects in energy-efficient semiconductor devices. The defects formed in thin interface layers of semiconductors are particularly difficult to characterize due to their buried and amorphous structures. Characterization methods which are sensitive to defects often require well-defined samples with long range order. Photoelectron spectroscopy (PES) combined with photoluminescence (PL) or electrical measurements is a potential approach to elucidate the structure and defects of the interface. It is essential to combine the PES with complementary measurements of similar samples to relate the PES changes to changes in the interface defect density. Understanding of the nature of defects related to III-V materials is relevant to developing for example field-effect transistors which include a III-V channel, but research is still far from complete. In this thesis, PES measurements are utilized in studies of various III-V compound semiconductor materials. PES is combined with photoluminescence measurements to study the SiO2/GaAs, SiNx/GaAs and BaO/GaAs interfaces. Also the formation of novel materials InN and photoluminescent GaAs nanoparticles are studied. Finally, the formation of Ga interstitial defects in GaAsN is elucidated by combining calculational results with PES measurements.

Développement de composés conjugués en étoile de première génération incluant des liens azométhines et études électrochimiques et photophysiques

Les matériaux conjugués sont de nos jours très utilisés dans de nombreuses applications ainsi qu’en recherche. L’enchainement des liaisons π-σ-π permet la délocalisation des électrons et d’obtenir différentes propriétés comme la conduction, la fluorescence, la chélation, etc. Ainsi, de nombreux dispositifs utilisent ces caractéristiques en vue d’obtenir de nouveaux matériaux révolutionnaires comme les cellules solaires, les transistors à effet de champs, les dispositifs électrochromiques, etc.. Les dispositifs électrochromiques font partie des dispositifs en vogue. Ils sont capables de changer de couleur selon le potentiel électrique appliqué. Ils se distinguent par la simplicité du mode de conception et ils ne nécessitent pas de fonctionner dans des conditions drastiques comme une atmosphère contrôlée. Ces dispositifs sont actuellement utilisés et commercialisés comme fenêtre intelligente, camouflage, papier électronique et carte de visite personnalisée pour n’en nommer que quelques-uns. Deux propriétés sont essentielles pour que des composés puissent être utilisés dans ces familles de dispositifs : la réversibilité à l’oxydation et la stabilité à l’air et à la lumière. Dans le groupe de recherche du professeur W.G. Skene, l’axe principal de recherche est basé sur la conception de nouveaux matériaux conducteurs comportant des liaisons azométhines. Les principaux matériaux étudiés sont des dérivés de thiophènes et de fluorènes. De précédents résultats ont montré que plusieurs produits issus de la réaction de condensation entre les dérivés du 2,5-diaminothiophène et de thiophènes diformylés menaient à des produits possédant d’excellentes propriétés photophysiques et électrochimiques. C’est en partant de ces résultats encourageants qu’il a été choisi de synthétiser une nouvelle famille de produits avec un nouveau substrat fonctionnalisé. Ce dernier possède d’excellentes propriétés électrochimiques et photophysiques : la triphénylamine. Deux familles de produits ont été synthétisées qui possèdent toutes comme cœur une triphénylamine. Cette dernière a été modifiée de façon à créer une, deux ou trois liaisons azométhines avec différents thiophènes. Deux dérivés du thiophène ont été choisis afin d’étudier l’influence des groupements donneurs et accepteurs sur ces nouveaux types de composés encore jamais étudiés. Les résultats des différentes synthèses et analyses ont été effectués par RMN, spectrométrie de masse, spectrométrie d’absorbance UV-Visible, fluorescence et voltampérométrie cyclique sont rapportées dans le présent recueil.

Effet de la microstructure sur les propriétés excitoniques des polymères semi-conducteurs semi-cristallins

Les polymères semi-conducteurs semicristallins sont utilisés au sein de diodes électroluminescentes, transistors ou dispositifs photovoltaïques organiques. Ces matériaux peuvent être traités à partir de solutions ou directement à partir de leur état solide et forment des agrégats moléculaires dont la morphologie dicte en grande partie leurs propriétés optoélectroniques. Le poly(3-hexylthiophène) est un des polymères semi-conducteurs les plus étudiés. Lorsque le poids moléculaire (Mw) des chaînes est inférieur à 50 kg/mol, la microstructure est polycristalline et composée de chaînes formant des empilements-π. Lorsque Mw>50 kg/mol, la morphologie est semicristalline et composée de domaines cristallins imbriquées dans une matrice de chaînes amorphes. À partir de techniques de spectroscopie en continu et ultrarapide et appuyé de modèles théoriques, nous démontrons que la cohérence spatiale des excitons dans ce matériau est légèrement anisotrope et dépend de Mw. Ceci nous permet d’approfondir la compréhension de la relation intime entre le couplage inter et intramoléculaire sur la forme spectrale en absorption et photoluminescence. De plus, nous démontrons que les excitations photogénérées directement aux interfaces entre les domaines cristallins et les régions amorphes génèrent des paires de polarons liés qui se recombinent par effet tunnel sur des échelles de temps supérieures à 10ns. Le taux de photoluminescence à long temps de vie provenant de ces paires de charges dépend aussi de Mw et varie entre ∼10% et ∼40% pour les faibles et hauts poids moléculaires respectivement. Nous fournissons un modèle permettant d’expliquer le processus de photogénération des paires de polarons et nous élucidons le rôle de la microstructure sur la dynamique de séparation et recombinaison de ces espèces.

Synthèse et étude de nouvelles molécules potentiellement polymérisables pour la fabrication de matériaux électroluminescents : analogues du 1,3,5 benzènetripyrrole, méthyle 3,5-bipyrrolebenzoate et 6,12-diméthyle-1,5-dipyrrolediazocane

Pyrroles are found in various natural products and in the chemical composition of certain drugs because of their interesting biological properties. Lipitor, Tolmetin and Amtolmetin are examples of drugs with 1,2,5-substituted pyrroles in their composition, in which biological activities have been certified. Moreover, pyrroles are used as precursors of semiconductor polymers, oligomers and dendrimers useful for the synthesis of electroluminescent materials used in devices, such as organic light-emitting diodes, field-effect transistors, solar and organic photovoltaic cells. We are interested in conjugated polymers based on pyrrole due to their optical properties, electrochemical and the conductivity produced by electron delocalization along their carbon chains. The overall objective of the work presented in this thesis is the synthesis of new molecules based on pyrrole for studying their electronic and electrochemical properties as well for the synthesis of conjugated polymers. Initially, we performed the synthesis of 1,3,5-tri-(1-alkyl-5-methylpyrrol-2-yl)benzenes, which may serve as precursors for the synthesis of conjugated dendrimers. Their synthesis was made in three steps starting from trimethyl 1,3,5-benzene-tricarboxylate which was converted to 1,3,5-tri-(pent-4-enoyl)benzene using vinylmagnesium bromide in a Grignard reaction catalyzed by copper cyanide. The olefins of 1,3,5-tri-(pent-4-enoyl)benzene were oxidized to produce 1,3,5-tri-(4-oxopentanoyl)benzene using a modified protocol of the Tsuji-Wacker reaction. Subsequent, Paal-Knorr condensation reactions on 1,3,5-tri-(4-oxopentanoyl)benzene with different amines were used to synthesize 1,3,5-tri-(1-alkyl-5-methylpyrrol-2-yl)benzenes with different N-substituents in yields between 44 and 60%. Incomplete reaction of vinylmagnesium bromide with trimethyl 1,3,5-benzenetricarboxylate gave the methyl-3,5-di(pent-4-enoyl)benzoate, which was converted to methyl-3,5-dipyrrolylbenzoate following the reaction of Tsuji- Wacker and Paal-Knorr with yields between 30 and 60%. The photochemical and electrochemical properties of the 1,3,5-tri-(1-alkyl-5-methylpyrrol-2-yl)benzenes and methyl-3,5-dipyrrolylbenzoates were studied in collaboration with the research group of professor William Skene. The results have shown that both types of pyrrole have potential for the synthesis of conjugated polymers and dendrimers used in the manufacture of electroluminescent materials. Following these encouraging results, we performed the synthesis of 6,12-dimethyl-1,5-dipyrrolediazocane. Methyl N-(Boc)-β-alaninate was converted to its corresponding homoallylic ketone, which was oxidized to N-(Boc)aminoheptan-3,6-dione. The Paal-Knorr condensation between N-(Boc)aminoheptan-3,6-dione and aminoheptan-3,6-dione hydrochloride gave 6,12-dimethyl-1,5-dipyrrolediazocane in 17% yield. In sum, we have synthesized and characterized seven new molecules, six of them having photochemical and electrochemical properties interesting for the synthesis of conjugated polymers and dendrimers. The latter offering potential as precursor for the conception of compounds of therapeutic interest.

Theoretical Design and Synthesis of Donor-Acceptor Conjugated Polymers for Photovoltaic and NLO Applications

Polymers with conjugated π-electron backbone display unusual electronic properties such as low energy optical transition, low ionization potentials, and high electron affinities. The properties that make these materials attractive include a wide range of electrical conductivity, mechanical flexibility and thermal stability. Some of the potential applications of these conjugated polymers are in sensors, solar cells, field effect transistors, field emission and electrochromic displays, supercapacitors and energy storage. With recent advances in the stability of conjugated polymer materials, and improved control of properties, a growing number of applications are currently being explored. Some of the important applications of conducting polymers include: they are used in electrostatic materials, conducting adhesives, shielding against electromagnetic interference (EMI), artificial nerves, aircraft structures, diodes, and transistors.

Synthese und Charakterisierung neuartiger, ambipolarer organischer Halbleiter, basierend auf Perylencarboximid-Systemen kombiniert mit funktionalisierten Spirobifluoreneinheiten

Das Ziel der vorliegenden Arbeit war die Synthese und Charakterisierung von donor-funktionalisierten Spiro-Perylencarboximiden, welche für den Einsatz in optoelektronischen Bauelementen wie z.B. organischen Phototransistoren, Feldeffekttransistoren oder Solarzellen vorgesehen sind. Die donorfunktionalisierten Spiro-Perylencarboximide stellen kovalent gebundene Donor-Akzeptor-Verbindungen dar, die unter geeigneter Belichtung einen ladungsgetrennten Zustand bilden können. Die Verbindungen wurden aus unterschiedlichen Spiroamin- und Perylenanhydrid-Edukten synthetisiert, die im Baukastenprinzip zu den entsprechenden Zielverbindungen umgesetzt wurden. Mittels unterschiedlicher Charakterisierungsmethoden (z.B. DSC, TGA, CV, Absorptions- und Fluoreszenzmessungen) wurden die Eigenschaften der neuartigen Zielverbindungen untersucht. Im Rahmen der Arbeit wurden vier neue Spiroamin-Edukte erstmalig synthetisiert und charakterisiert. Sie wurden durch Reduktion aus den bisher noch nicht beschriebenen Nitroverbindungen bzw. mittels Pd-katalysierter Kreuzkupplung (Hartwig-Buchwald-Reaktion) aus einer halogenierten Spiroverbindung erhalten. Als Perylenanhydrid-Edukt wurde erstmals eine perfluorierte Perylenanhydrid-Imid-Verbindung hergestellt. Aus den Spiroamin- und Perylenanhydrid-Edukten wurden insgesamt neun neue, donorfunktionalisierte Spiro-Perylencarboximide synthetisiert. Zusätzlich wurden sechs neuartige Spiro-Perylencarboximide ohne Diphenylamin-Donor hergestellt, die als Vergleichsverbindungen dienten. Die donorfunktionalisierten Spiro-Perylencarboximide besitzen eine Absorption im UV- und sichtbaren Spektralbereich, wobei hohe Extinktionskoeffizienten erreicht werden. Die Verbindungen zeigen in verdünnter Lösung (sowohl in polaren als auch in unpolaren Lösungsmitteln) eine Fluoreszenzquantenausbeute unter 1 %, was auf einen effizienten Ladungstransfer zurückzuführen ist. Alle donorfunktionalisierten Spiro-Perylencarboximide zeigen in den CV-Messungen reversibles Verhalten. Mittels CV-Messungen und optischer Methode konnten die HOMO- und LUMO-Lagen der jeweiligen Molekülhälften berechnet und das Fluoreszenzverhalten der Verbindungen erklärt werden. Ebenso konnten die Auswirkungen von unterschiedlichen Substituenten auf die jeweiligen HOMO-/LUMO-Lagen näher untersucht werden. Die durchgeführten DSC- und TGA-Untersuchungen zeigen hohe morphologische und thermische Stabilität der Verbindungen, wobei Glasübergangstemperaturen > 211 °C, Schmelztemperaturen > 388 °C und Zersetzungstemperaturen > 453 °C gemessen wurden. Diese Werte sind höher als die bisher in der Literatur für ähnliche spiroverknüpfte Verbindungen berichteten. Als besonders interessant haben sich die unsymmetrischen donorfunktionalisierten Spiro-Perylencarboximide herausgestellt. Sie zeigen hohe Löslichkeit in gängigen Lösungsmitteln, sind bis zu einer Molmasse < 1227 g/mol aufdampfbar und bilden stabile, amorphe Schichten.

Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation

Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C2xB1−xN1−x alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate substitution of C (x < 0.25); and (b) the electronic structure of C2xB1−xN1−x can be further tuned not only with composition x, but also with the configuration adopted by C substituents in the BN matrix. Our analysis, based on accurate screened hybrid functional calculations, provides a clear understanding of the correlation found between the bandgap and the level of aggregation of C atoms: the bandgap decreases most when the C atoms are maximally isolated, and increases with aggregation of C atoms due to the formation of bonding and anti-bonding bands associated with hybridization of occupied and empty defect states. We determine the location of valence and conduction band edges relative to vacuum and discuss the implications on the potential use of 2D C2xB1−xN1−x alloys in photocatalytic applications. Finally, we assess the thermodynamic limitations on the formation of these alloys using a cluster expansion model derived from first-principles.

Filmes finos dielétricos para dispositivos microeletrônicos avançados

Apresentamos mecanismos de formação e de degradação térmica de filmes fi- nos (espessura da ordem de 10 nm) de diferentes dielétricos sobre substrato de silício monocristalino. Tendo em vista a aplicação dessas estruturas em MOSFETs (transistores de efeito de campo metal-óxido-semicondutor), estudamos o consagrado óxido de silício (SiO2), os atuais substitutos oxinitretos de silício (SiOxNy) e o possível substituto futuro óxido de alumínio (Al2O3). Nossos resultados experimentais baseiam-se em técnicas preparativas de substituição isotópica e de caracterização física com feixes de íons (análise com reações nucleares) ou raios- X (espectroscopia de fotoelétrons). Observamos que: (a) átomos de silício não apresentam difusão de longo alcance (além de ~ 2 nm) durante o crescimento de SiO2 por oxidação térmica do silício em O2; (b) nitretação hipertérmica é capaz de produzir filmes finos de oxinitreto de silício com até dez vezes mais nitrogênio que o resultante do processamento térmico usual, sendo que esse nitrogênio tende a se acumular na interface SiOxNy/Si; e (c) átomos de oxigênio, alumínio e silício migram e promovem reações químicas durante o recozimento térmico de estruturas Al2O3/SiO2/Si em presença de O2. Desenvolvemos um modelo de difusão-reação que poderá vir a permitir o estabelecimento de condições ótimas de processamento térmico para filmes finos de Al2O3 sobre silício a serem empregados na fabricação de MOSFETs.

Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Detection of volatile organic compounds using a polythiophene derivative

Conjugated polymers have been subject of great interest in the recent literature from both fundamental point of view and applied science perspective. Among the several types of conjugated polymers used in recent investigations, polythiophene and its derivatives have attracted considerable attention over the past 20 years due to their high mobility and other remarkable solid-state properties. They have potential applications in many fields, such as microelectronic devices, catalysts, organic field-effect transistors, chemical sensors, and biosensors. They have been studied as gas and volatile organic compounds (VOCs) sensors using different principles or transduction techniques, such as optical absorption, conductivity, and capacitance measurements. In this work, we report on the fabrication of gas sensors based on a conducting polymer on an interdigitated gold electrode. We use as active layer of the sensor a polythiophene derivative: poly (3-hexylthiophene) (P3HT) and analyzed its conductivity as response for exposure to dynamic flow of saturated vapors of six VOCs [n-hexane, toluene, chloroform, dichloromethane, methanol, and tetrahydrofuran (THE)]. Different responses were obtained upon exposure to all VOCs, THF gave the higher response while methanol the lower response. The influence of moisture on the measurements was also evaluated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Optically anisotropic and photoconducting Langmuir-Blodgett films of neat poly(3-hexylthiophene)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)