978 resultados para Domain wall resistance


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We begin an investigation of inhomogeneous structures in holographic superfluids. As a first example, we study domain wall like defects in the 3+1 dimensional Einstein-Maxwell-Higgs theory, which was developed as a dual model for a holographic superconductor. In [1], we reported on such "dark solitons" in holographic superfluids. In this work, we present an extensive numerical study of their properties, working in the probe limit. We construct dark solitons for two possible condensing operators, and find that both of them share common features with their standard superfluid counterparts. However, both are characterized by two distinct coherence length scales (one for order parameter, one for charge condensate). We study the relative charge depletion factor and find that solitons in the two different condensates have very distinct depletion characteristics. We also study quasiparticle excitations above the holographic superfluid, and find that the scale of the excitations is comparable to the soliton coherence length scales.

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The effect of temperature and stoichiometry on the polarization switching rate in lithium niobate is presented. An increased polarization switching rate in congruent and near-stoichiometric lithium niobate (CLN and SLN) and SLN doped with 1.6 mol% Zn (SLN:Zn(1.6)) is observed using a pulsed field switching technique near the transition temperature (TO. Compared to CLN, the observed switching rate and domain wall mobility for SLN and SLN:Zn(1.6) are higher. The extra charge flow was observed during switching at high temperatures,and is attributed to the creation of defect dipoles and increase in ionic conductivity. Forward domain motion is expected to be the mechanism involved in switching. (C) 2010 Elsevier Ltd. All rights reserved.

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The mechanism of field induced phase switching in antiferroelectric lead zirconate and La-modified lead zirconate thin films has been analysed in terms of reversible and irreversible switching process under weak fields as a function of donor concentration. Extension of Rayleigh law of ferromagnetic materials to the present antiferroelectric and modified antiferroelectric compositions have clearly showed that origin of small signal dielectric permittivity is due to reversible domain wall motion. Rayleigh's constant, a measure of irreversible switching process, exhibited a slight increase with lower La3+ concentrations and followed by a gradual fall for higher concentration. This clearly illustrates that donor addition to antiferroelectric thin films controls the domain switching even under weak fields. (C) 2002 Elsevier Science B.V. All rights reserved.

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La-graded heterostructure films were prepared by sol-gel technique on platinum substrates and electrical properties of these films were compared with those of conventional thin films of similar compositions. X-ray diffraction results indicate the pure perovskite polycrystalline structure of these films. Atomic Force Microscopy analysis revealed a finer grain size and relatively lower surface roughness. Relatively higher values of Pm and Pr (69 and 38 ?C cm?2, respectively) and excellent dielectric properties with lower loss (K=1900, tan ?=0.035 at 100 kHz) were observed for La-graded heterostructure films. Also lower leakage current density (not, vert, similar2.5 nA cm?2) and a higher onset field (not, vert, similar50 kV cm?1) of space charge conduction indicated higher breakdown strength and good leakage current characteristics. The ac electric field dependence of the permittivity at sub-switching fields was analyzed in the framework of the Rayleigh dynamics of domain walls. The estimated irreversible domain wall displacement contribution to the total dielectric permittivity was 17 and 9% for conventional 15 at.% La doped PbTiO3 and La-graded heterostructure films, respectively. The improved dielectric and polarization behavior of La-graded heterostructure films may be attributed to homogenous dopant distribution compared to the conventional 15 at.% La doped PbTiO3 films.

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Nonlinear dielectric response of BaBi4Ti4O15 ceramics synthesized via the conventional solid-state reaction route has been monitored over a wide range of electric field strengths (E-0 = 0.5 - 5 kV/cm). Dielectric permittivity was found to increase linearly within the range of applied field. Rayleigh relations were employed to interpret the nonlinear dielectric response and the contribution of irreversible domain wall motion to the macroscopic permittivity was separated. The values of room temperature Rayleigh dielectric coefficient (alpha) and relative initial permittivity (epsilon'(init)) were found to be 2.28 +/- 0.02 cm/kV and 146.10 +/- 0.07, respectively. A reasonable agreement between the simulated and measured polarization-electric field (P-E) hysteresis loops was observed at an applied electric field of 5 kV/cm.

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We report the evidence for the anisotropic magnetoimpedance behavior in (001) oriented La0.7Sr0.3MnO3 (LSMO) thin films, in low frequency-low magnetic field regime. (001) oriented LSMO thin films were deposited using pulsed laser deposition and characterized with X-ray diffraction and temperature dependent magnetization studies. In the in-plain configuration, an ac magnetoresistance (MRac) of similar to -0.5% was observed at 1000 Oe, at 100 Hz frequency in these films. The MRac was found to decrease with increase in frequency. We observe increases in MRac at low frequency, indicating major contribution for change of permeability from domain wall motion. At higher frequencies, it decreases due to decrease in transverse permeability, resulting from dampening of domain wall motion. Out-of-plane configuration showed MRac similar to 5.5% at 1000 Oe, at 100 Hz frequency. The MRac turned from positive to negative with increase in frequency in out-of-plane configuration. These changes are attributed to the change in permeability of the film with the frequency and applied magnetic field.

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Mn0.4Zn0.6Fe2O4 powders were prepared by microwave hydrothermal method. The powders were characterized by X-ray diffraction, transmission electron microscope. The powders were sintered at different temperatures 400, 500, 600, 700, 800 and 900 degrees C/30 min using microwave sintering method. The grain size was estimated by scanning electron microscope. The room temperature dielectric and magnetic properties were studied in the frequency range (100 kHz-1.8 GHz). The magnetization properties were measured upto 1.5 T. The acoustic emission has been measured along the hysteresis loops from 80 K to Curie temperature. It is found that the magneto-acoustic emission (MAE) activity along hysteresis loop is proportional to the hysteresis losses during the same loop. This law has been verified on series of polycrystalline ferrites and found that the law is valid whatever the composition, the grain size and temperature. It is also found that the domain wall creation/or annihilation processes are the origin of the MAE. (C) 2013 Published by Elsevier Ltd.

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The First Order Reversal Curve (FORC) method has been utilised to understand the magnetization reversal and the extent of the irreversible magnetization of the soft CoFe2O4-hard SrFe12O19 nanocomposite in the nonexchange spring and the exchange spring regime. The single peak switching behaviour in the FORC distribution of the exchange spring composite confirms the coherent reversal of the soft and hard phases. The onset of the nucleation field and the magnetization reversal by domain wall movement are also evident from the FORC measurements. (C) 2013 AIP Publishing LLC.

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Using polarization-dependent x-ray photoemission electron microscopy, we have investigated the surface effects on antiferromagnetic (AFM) domain formation. Depth-resolved information obtained from our study indicates the presence of strain-induced surface AFM domains on some of the cleaved NiO(100) crystals, which are unusually thinner than bulk AFM domain wall widths (similar to 150 nm). Existence of such magnetic skin layer is substantiated by exchange-coupled ferromagnetic Fe domains in Fe/NiO(100), thereby evidencing the influence of this surface AFM domains on interfacial magnetic coupling. Our observations demonstrate a depth evolution of AFM structure in presence of induced surface strain, while the surface symmetry-breaking in absence of induced strain does not modify the bulk AFM domain structure. Realization of such thin surface AFM layer will provide better microscopic understanding of the exchange bias phenomena. (C) 2014 AIP Publishing LLC.

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Nanocrystalline strontium hexaferrites SrFe12-2x (Ni2+-Zr4+)(x)O-19] nanoparticles were successfully synthesized by sal gel process. For densification the powders were sintered at 950 degrees C/4 h. The sintered samples were characterized by X-ray diffraction (XRD), surface area measurement, and field emission scanning electron microscope (FESEM). The lattice parameter a is almost constant but c increased with x upto 0.8 and then decreased. The frequency dependent complex permittivity (epsilon and epsilon `' and permeability (mu' and mu `') and magnetic properties such as saturation magnetization (M-s), coercive field (H-c) were studied. If is observed that saturation magnetization increased gradually from 57.82 emuig to 67.2 emufg as x increased from 0.2 to 0.4 and then decreased from 672 emufg to 31.63 ernufg for x=1.0. In present study, x=0.4 shows high value of M-s 67.2 emu/g. The real part of permittivity (epsilon') remains constant upto a frequency 1 GHz and increases further with an increase of frequency, a resonance and anti resonance peak was observed above 1 GHz for all the samples. In real part of permeability (mu') the relaxation frequency is observed above 1 GHz for all the samples and it is attributed to the domain wall motion. It is well known that the permeability for polycrystalline ferrites can be described as the superposition of two different magnetizing mechanisms: spin rotation and domain wall motion. These low coercive strontium hexaferrites are suitable for magnetic recording applications in hard disks, floppy disks, video tapes, etc. (C) 2015 Elsevier B.V. All rights reserved.

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Polycrystalline BiFeO3 thin films were grown on La0.5Sr0.5CoO3 buffered Pt (200)/TiO2/SiO2/Si substrates under different oxygen partial pressures (10, 25, 50 and 100 mTorr) by puked laser ablation. Piezo-response Force Microscopy and Piezo-Force Spectroscopy have shown that all the films are ferroelectric in nature with locally switchable domains. It has also revealed a preferential downward domain orientation in as-grown films grown under lower oxygen partial pressure (10 and 25 mTorr) with a reversal of preferential domain orientation as the oxygen partial pressure is increased to 100 mTorr during laser ablation. Such phenomena are atypical of multi-grained polycrystalline ferroelectric films and have been discussed On the basis of detect formation with changing growth conditions. For the 50 mTorr grown film, asymmetric domain stability and retention during write-read studies has been observed which is attributed to grain-size-related defect concentration, affecting pinning centres that inhibit domain wall motion. (C) 2015 Elsevier Ltd. All rights reserved.

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In this paper, using the Gauge/gravity duality techniques, we explore the hydrodynamic regime of a very special class of strongly coupled QFTs that come up with an emerging UV length scale in the presence of a negative hyperscaling violating exponent. The dual gravitational counterpart for these QFTs consists of scalar dressed black brane solutions of exactly integrable Einstein-scalar gravity model with Domain Wall (DW) asymptotics. In the first part of our analysis we compute the R-charge diffusion for the boundary theory and find that (unlike the case for the pure AdS (4) black branes) it scales quite non trivially with the temperature. In the second part of our analysis, we compute the eta/s ratio both in the non extremal as well as in the extremal limit of these special class of gauge theories and it turns out to be equal to 1/4 pi in both the cases. These results therefore suggest that the quantum critical systems in the presence of (negative) hyperscaling violation at UV, might fall under a separate universality class as compared to those conventional quantum critical systems with the usual AdS (4) duals.

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Orthorhombic single crystals of TbMn0.5Fe0.5O3 are found to exhibit spin-reorientation, magnetization reversal, and weak ferromagnetism. Strong anisotropy effects are evident in the temperature dependent magnetization measurements along the three crystallographic axes a, b, and c. A broad magnetic transition is visible at T-N(Fe/Mn) = 286K due to paramagnetic to A(x)G(y)C(z) ordering. A sharp transition is observed at T-SR(Fe/Mn) = 28 K, which is pronounced along c axis in the form of a sharp jump in magnetization where the spins reorient to G(x)A(y)F(z) configuration. The negative magnetization observed below T-SR(Fe/Mn) along c axis is explained in terms of domain wall pinning. A component of weak ferromagnetism is observed in field-scans along c-axis but below 28 K. Field-induced steps-like transitions are observed in hysteresis measurement along b axis below 28 K. It is noted that no sign of Tb-order is discernible down to 2K. TbMn0.5Fe0.5O3 could be highlighted as a potential candidate to evaluate its magneto-dielectric effects across the magnetic transitions. (C) 2015 AIP Publishing LLC.

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The purpose of this work is to extend experimental and theoretical understanding of horizontal Bloch line (HBL) motion in magnetic bubble materials. The present theory of HBL motion is reviewed, and then extended to include transient effects in which the internal domain wall structure changes with time. This is accomplished by numerically solving the equations of motion for the internal azimuthal angle ɸ and the wall position q as functions of z, the coordinate perpendicular to the thin-film material, and time. The effects of HBL's on domain wall motion are investigated by comparing results from wall oscillation experiments with those from the theory. In these experiments, a bias field pulse is used to make a step change in equilibrium position of either bubble or stripe domain walls, and the wall response is measured by using transient photography. During the initial response, the dynamic wall structure closely resembles the initial static structure. The wall accelerates to a relatively high velocity (≈20 m/sec), resulting in a short (≈22 nsec ) section of initial rapid motion. An HBL gradually forms near one of the film surfaces as a result of local dynamic properties, and moves along the wall surface toward the film center. The presence of this structure produces low-frequency, triangular-shaped oscillations in which the experimental wall velocity is nearly constant, vs≈ 5-8 m/sec. If the HBL reaches the opposite surface, i.e., if the average internal angle reaches an integer multiple of π, the momentum stored in the HBL is lost, and the wall chirality is reversed. This results in abrupt transitions to overdamped motion and changes in wall chirality, which are observed as a function of bias pulse amplitude. The pulse amplitude at which the nth punch- through occurs just as the wall reaches equilibrium is given within 0.2 0e by Hn = (2vsH'/γ)1/2 • (nπ)1/2 + Hsv), where H' is the effective field gradient from the surrounding domains, and Hsv is a small (less than 0.03 0e), effective drag field. Observations of wall oscillation in the presence of in-plane fields parallel to the wall show that HBL formation is suppressed by fields greater than about 40 0e (≈2πMs), resulting in the high-frequency, sinusoidal oscillations associated with a simple internal wall structure.

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对紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转进行了实验研究。波长为351 nm的连续紫外激光被聚焦在近化学计量比钽酸锂晶体的-z表面,同时沿与晶体自发极化相反的方向施加均匀外电场。实验证实紫外激光辐照可以有效地降低晶体畴反转所需的矫顽电场,采用数字全息干涉测量技术检测证实在激光辐照区域实现局域畴反转。研究表明采用紫外激光诱导可以实现对近化学计量比钽酸锂晶体铁电畴反转的局域控制。提出了物理机理的理论分析,认为外电场和激光辐照场的共同作用在晶体内部产生高浓度、大尺寸的缺陷结构,缺陷一定程度上降低畴体成核和畴