Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals

We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018 / cm3, are acceptable for practical devices with Q factors as high as 4× 104. © 2011 American Institute of Physics.

Real-time non-destructive testing of dynamic holograms in doubly-doped LiNbO3 crystals using phase-conjugate technique

Nankai University

THE STUDY OF MICROSTRUCTURE IN IRON-DOPED AND SULFUR-DOPED INP CRYSTALS BY MEANS OF HREM AND COMPUTER-SIMULATION

The microstructures in iron- and sulphur-doped InP crystals were studied using both electron microscopy and electron diffraction. A modulated structure has been found in S-doped InP crystal, where the commensurate modulations corresponded to periodicities of 0.68 nm and 0.7 nm in real space and were related to the reflections of the cubic lattice in [111] and [113BAR] directions; they were indexed as q111* = 1/2(a* + b* + c*) and q113BAR* = 1/4(-a* - b* + 3c*), respectively. Single atomic layers of iron precipitate were observed, with preferred orientations along which precipitates are formed. Simulated calculations by means of the dynamical theory of electron diffraction using models for the precipitate structure were in good agreement with our experimental results. The relation between the modulated structure and the precipitates is also discussed.

Photo-induced phase transitions in azobenzene-doped liquid crystals

The effect of irradiation (UV-visible light) on a nematic liquid crystal doped with a photoactive azobenzene derivative was investigated. The selective irradiation results in either an E implies Z or Z implies E isomerization of the azobenzene unit. The effect of the isomerization is to cause a reversible depression of the liquid crystal to isotropic (LC implies l) phase transition temperature of the doped mixture, which can be monitored optically as an isothermal phase transition. This depression also results in a biphasic liquid crystal+isotropic region which is discussed. The authors investigate the cause and magnitude of the phase depression as a function of the amount of doped 4-butyl-4'-methoxyazobenzene (photoactive unit) in 4-cyano-4'-n-pentylbiphenyl (liquid crystal unit), and as a function of the percentage conversion of E implies Z (caused by isomerization) in the azobenzene. The photostationary state of the doped mixtures achieved by Z implies E isomerization is considered and its effect upon the transition temperature of the mixture and response time of the system is discussed. They discuss the implications of the photostationary state with regards to the reversibility of the photo-induced phase transition and hence potential applications.

Relaxation of the electrical resistivity in Cr-doped Nd(0.5)Ca(0.5)MnO(3) single crystals

We have performed a systematic study of the time and temperature dependencies of the electrical resistivity (rho(T, t)) inNd(0.5)Ca(0.5)Mn(1-x)Cr(x)O(3) single crystals with x = 0.02 and 0.07 in order to examine the dynamics of the phase separation. The relaxation effects can be described by the combination of a rapid exponential increase/decrease with a slower logarithmic contribution at longer times. The experimental results suggest the existence of a large temperature window in which huge relaxation effects occur, and the relative fraction of the coexisting phases rapidly changes as a function of time, depending on the initial magnetic state of the sample. The rho(T, t) relaxation measurements were shown to be a suitable tool for probing the dynamical nature of the phase separation, in which magnetically distinct phases compete against each other in a wide temperature range. In addition, the features observed in the rho(T, t) curves were found to be in excellent agreement with both the magnetic properties and the structural transitions observed in these manganites.

X-ray-induced conductivity in iron-doped lithium niobate crystals

Illumination of photorefractive, iron-doped lithium niobate crystals (LiNbO 3:Fe) with x-rays generates a conductivity that we determine from the speed of hologram erasure. The doping levels of the crystals and the acceleration voltage of our x-ray tube are varied. A theoretical model is presented, which describes the obtained results. A decrease of the conductivity with increasing Fe 2+ concentration can be explained by assuming that holes are the dominant charge carriers for this short-wavelength illumination.

Optical properties and defect structure of Sr2+ co-doped LaBr3:5%Ce scintillation crystals

Sr2+ co-doped LaBr3:5%Ce scintillators show a record low energy resolution of 2% at 662 keV and a considerably better proportional response compared to standard LaBr3:5%Ce. This paper reports on the optical properties and time response of Sr co-doped LaBr3:5%Ce. Multiple excitation and emission bands were observed in X-ray and optically excited luminescence measurements. Those bands are ascribed to three different Ce3+ sites. The first is the unperturbed site with the same luminescence properties as those of standard LaBr3:Ce. The other two are perturbed sites with red-shifted 4f-5d1 Ce3+ excitation and emission bands, longer Ce3+ decay times, and smaller Stokes shifts. The lowering of the lowest 5d level of Ce3+ was ascribed to larger crystal field interactions at the perturbed sites. Two types of point defects in the LaBr3 matrix were proposed to explain the observed results. No Ce4+ ions were detected in Sr co-doped LaBr3:5%Ce by diffuse reflectance measurements.