多效唑（MET）在玉米组培中的作用及机理研究

多效唑（MET）是一种新型的植物生长调节剂．本文以多杆多穗青饲玉米为材料详细地研究了它征组织培养中的作用和生物学效应，并对它的作用机理也进行了初步的探讨。 研究结果表明：(1)适宜浓度的MET能够提高不同外植体愈伤组织的诱导率;(2)2～4 mg／lMET能改善愈伤组织的质量，提高愈伤组织的分化率、绿苗形成率、根的形成率和正常苗／异常苗的比值;（3）壮苗培养，MEP能使再生苗形态结构和生理等方面均发生较大的变化，并使其生长健壮，根系发达，移裁入土后成活率提高，达80%以上;（4）在再生苗的长期保存中，MET也具有良好的作用效应;(5)在继代培养中，MET处理后，愈伤组织的生长值下降;过氧化物酶活性和IAA氧化酶活性增加， 内源乙烯的释放量上升;外源GA3可逆转MET的作用效应，IAA、kt、ABA没有逆转效应，相反，ABA与MET对抑制愈防组织的生长具有加成效应．MET的作用机班可能是：通过改变细胞内酶的活性和内源激素的含量水平来控制愈伤组织细胞的生长、分化以及再生植株的生长和发育。 MET在玉米组培中所表现出的良好的作用效应表明：对于解决植物组织培养中所普遍存在的一些问题，用MET处理可能会变成一种有效的方法。展示出MET在植物生物技术领域也具有广泛的应用前景。

Observations on the inhibitory effect of sodium chloride on molds met with in smoked fishery products

Even though smoke curing is a very elegant method of preserving fish, the resultant products have only a very restricted shelf-life, unless stored under refrigerated conditions. The main source of spoilage is the early setting in of a vigorous growth of moulds. This problem is of a serious nature even in temperate climatic conditions. In full and universal recognition of the gravity of the problem, the FAO conference on herring technology held in September 1950 at Bergen in Norway has recommended the problem of "means of prevention of mould growth in smoked products" for future research study. This note records an interesting observation made at this Laboratory on the inhibitory action of sodium chloride on the development of mould in smoked fishery products.

Instrument for the measurement of the fore and aft tilt of otterboards

A portable self-contained instrument has been designed and developed for the measurement of the Fore and Aft tilt of otter boards within the range —22° to + 22° with an accuracy of ± 1°. An underwater transducer fitted on the otter board converts its tilt into corresponding electrical resistance which is measured in an ohmmeter on board, both being connected by electric cable.

High tilt angle FLC SLM for optical interconnects

The use of high tilt angle FLC SLM for optical interconnects was discussed. The transmissive SLM was designed as a 320×1 pixels glass SLM with 20 μm pitch pixels and 2 μm pixel deadspace. The SLM was fabricated using standard class 100 cleanroom facilities to make a glass on glass 1D SLM. The results show that a N×N optical switch can be built using the two-hologram architecture.

Micro-electro-mechanical resonant tilt sensor

This paper reports a micro-electro-mechanical tilt sensor based on resonant sensing principles. The tilt sensor measures orientation by sensing the component of gravitational acceleration along a specified input axis. Design aspects of the tilt sensor are first introduced and a design trade-off between sensitivity, resolution and robustness is addressed. A prototype sensor is microfabricated in a foundry process. The sensor is characterized to validate predictive analytical and FEA models of performance. The prototype is tested over tilt angles ranging over ±90 degrees and the linearity of the sensor is found to be better than 1.4% over the tilt angle range of ±20°. The noise-limited resolution of the sensor is found to be approximately 0.00026 degrees for an integration time of 0.6 seconds. © 2012 IEEE.

Micro-electro-mechanical resonant tilt sensor with 250 nano-radian resolution

This paper reports a high-resolution frequency-output MEMS tilt sensor based on resonant sensing principles. The tilt sensor measures orientation by sensing the component of gravitational acceleration along a specified input axis. A combination of design enhancements enables significantly higher sensitivity for this device as compared to previously reported prototype sensors. The MEMS tilt sensor is calibrated on a manual tilt table over tilt angles ranging over 0-90 degrees with a relatively linear response measured in the range of ±20°(linearity error <2.3%) with a scale factor of approximately 50.06 Hz/degree. The noise-limited resolution of the sensor is found to be approximately 250 nano-radians for an integration time of 0.8 s, which is over an order of magnitude better than previously reported results [1]. © 2013 IEEE.

QtUCP-A program for determining unit-cell parameters in electron diffraction experiments using double-tilt and rotation-tilt holders

A computer program, QtUCP, has been developed based on several well-established algorithms using GCC 4.0 and Qt (R) 4.0 (Open Source Edition) under Debian GNU/Linux 4.0r0. it can determine the unit-cell parameters from an electron diffraction tilt series obtained from both double-tilt and rotation-tilt holders. In this approach, two or more primitive cells of the reciprocal lattice are determined from experimental data, in the meantime, the measurement errors of the tilt angles are checked and minimized. Subsequently, the derived primitive cells are converted into the reduced form and then transformed into the reduced direct primitive cell. Finally all the patterns are indexed and the least-squares refinement is employed to obtain the optimized results of the lattice parameters. Finally, two examples are given to show the application of the program, one is based on the experiment, the other is from the simulation. (C) 2008 Elsevier B.V. All rights reserved.

Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction

The full-width at half-maximum (FWHM) of an x-ray rocking curve (XRC) has been used as a parameter to determine the tilt and twist angles of GaN layers. Nevertheless, when the thickness of GaN epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. In this paper, using the (0 0 l), l = 2, 4, 6, XRC to minimize the effects of wafer curvature was studied systematically. Also the method to determine the tilt angle of a curved GaN layer was proposed while the Williamson-Hall plot was unsuitable. It was found that the (0 0 6) XRC-FWHM had a significant advantage for high-quality GaN layers with the radius curvature of r less than 3.5 m. Furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) XRC-FWHM. In skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) XRC-FWHM are in accord with those from the grazing incidence in-plane diffraction (IP-GID) method for significantly curved samples.

Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition

The structural property of InN films grown on Ga-face GaN layers by metal-organic chemical vapor deposition has been studied by high-resolution x-ray diffraction. The mosaic tilt and twist are found to be strongly dependent on the surface lateral grain size. The twist decreases with increasing grain size and finally approaches to a constant level. On the other hand, the mosaic tilt increases substantially when the grain size becomes large enough and exceeds the width of step terraces on the GaN surface, showing an important mechanism for the defect generation in the InN/GaN system with large out-of-plane lattice mismatch. (c) 2006 American Institute of Physics.

A highly efficient beam propagation method for modeling step-index waveguides with tilt interface

Based on a new finite-difference scheme and Runge-Kutta method together with transparent boundary conditions (TBCs), a novel beam propagation method to model step-index waveguides with tilt interfaces is presented. The modified scheme provides an precies description of the tilt interface of the nonrectangular waveguide structure, showing a much better efficiency and accuracy comparing with the previously presented formulas.

New finite-difference scheme for simulations of step-index waveguides with tilt interfaces

A new finite-difference scheme is presented for the second derivative of a semivectorial field in a step-index optical waveguide with tilt interfaces. The present scheme provides an accurate description of the tilt interface of the nonrectangular structure. Comparison with previously presented formulas shows the effectiveness of the present scheme.

Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) on sapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). It was found that ELO GaN stripes bent towards the SiNx mask in the direction perpendicular to seeding lines. Each side of GaN (0002) peak in DC-XRD rocking curves was a broad peak related with the crystallographic tilt. This broad peak split into two peaks (denoted as A and B), and peak B disappeared gradually when the mask began to be removed by selective etching. Only narrow peak A remained when the SiNx mask was removed completely. A model based on these results has been developed to show that there are two factors responsible for the crystallographic tilt: One is the non-uniformity elastic deformation caused by the interphase force between the ELO GaN layer and the SiNx mask. The other is the plastic deformation, which is attributed to the change of the threading dislocations (TDs)-from vertical in the window regions to the lateral in the regions over the mask.