Deposition reactors for solar grade silicon: a comparative thermal analysis of a Siemens reactor and a fluidized bed reactor

Polysilicon production costs contribute approximately to 25-33% of the overall cost of the solar panels and a similar fraction of the total energy invested in their fabrication. Understanding the energy losses and the behaviour of process temperature is an essential requirement as one moves forward to design and build large scale polysilicon manufacturing plants. In this paper we present thermal models for two processes for poly production, viz., the Siemens process using trichlorosilane (TCS) as precursor and the fluid bed process using silane (monosilane, MS).We validate the models with some experimental measurements on prototype laboratory reactors relating the temperature profiles to product quality. A model sensitivity analysis is also performed, and the efects of some key parameters such as reactor wall emissivity, gas distributor temperature, etc., on temperature distribution and product quality are examined. The information presented in this paper is useful for further understanding of the strengths and weaknesses of both deposition technologies, and will help in optimal temperature profiling of these systems aiming at lowering production costs without compromising the solar cell quality.

Tuning the functional properties of Silicon Carbide Thin Film and Nanowires

The present thesis has been devoted to the synthesis and investigation of functional properties of silicon carbide thin films and nanowires. The work took profit from the experience of the research group in the synthesis of 3C-SiC from vapour phase. 3C-SiC thin films Thin films heteroepitaxy on silicon substrates was carried out in a vapour phase epitaxy reactor. The initial efforts were committed to the process development in order to enhance the crystal quality of the epi-layer. The carbonization process and a buffer layer procedure were optimized in order to obtain good quality monocrystalline 3C-SiC layers. The films characterization was used not only to improve the entire process, but also to assess the crystalline quality and to identify the defects. Methyltrichlorosilane (MTS) was introduced during the synthesis to increase the growth rate and enhance crystalline quality. The effect of synthesis parameters such as MTS flow and process temperature was studied in order to promote defect density reduction and the release of the strain due to lattice mismatch between 3C-SiC and silicon substrate. In-growth n-type doping was implemented using a nitrogen gas line and the effect of different synthesis parameters on doping level was studied. Raman measurements allowed a contactless characterization and evaluation of electrically active dopant. The effect of MTS on nitrogen incorporation was investigated and a promotion of dopant concentration together with a higher growth rate were demonstrated. This result allows to obtain higher doping concentrations without deteriorating crystal quality in 3C-SiC and, to the best of our knowledge, it has never been demonstrated before. 3C-SiC nanowires Core-shell SiC-SiO2 nanowires were synthesized using a chemical vapour deposition technique in an open tube configuration reactor on silicon substrates. Metal catalyst were used to promote a uniaxial growth and a dense bundle of nanowires 100 µm long and 60 nm thick was obtained. Substrate preparation was found to be fundamental in order to obtain a uniform nanowire density. Morphological characterization was carried out using scanning electron microscopy and the analysis of structural, compositional, optical properties is reported.

The growth of silicon sheets for photovoltaic applications /

The status of silicon sheet development for photovoltaic applications is critically reviewed. Silicon sheet growth processes are classified according to their linear growth rates. The "fast" growth processes, which include edge-defined film-fed growth, silicon on ceramic, dendritic-web growth, and ribbon-to-ribbon growth, are comparatively ranked subject to criteria involving growth stability, sheet productivity, impurity effects, crystallinity, and solar cell results. The status of more rapid silicon ribbon growth techniques, such as horizontal ribbon growth and melt quenching, is also reviewed. The emphasis of the discussions is on examining the viability of these sheet materials as solar cell substrates for low-cost silicon photovoltaic systems.

Amorphous structures induced in monocrystalline silicon by mechanical loading

Different amorphous structures have been induced in monocrystalline silicon by high pressure in indentation and polishing. Through the use of high-resolution transmission electron microscopy and nanodiffraction, it was found that the structures of amorphous silicon formed at slow and fast loading/unloading rates are dissimilar and inherit the nearest-neighbor distance of the crystal in which they are formed. The results are in good agreement with recent theoretical predictions. (C) 2004 American Institute of Physics.

Voltage control of exchange coupling in phosphorus doped silicon

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.

Isothermal fatigue of an aluminide-coated single-crystal superalloy:Part I

The isothermal fatigue behavior of a high-activity aluminide-coated single-crystal superalloy was studied in air at test temperatures of 600 °C, 800 °C, and 1000 °C. Tests were performed using cylindrical specimens under strain control at ∼0.25 Hz; total strain ranges from 0.5 to 1.6 pet were investigated. At 600 °C, crack initiation occurred at brittle coating cracks, which led to a significant reduction in fatigue life compared to the uncoated alloy. Fatigue cracks grew from the brittle coating cracks initially in a stage II manner with a subsequent transition to crystallographic stage I fatigue. At 800 °C and 1000 °C, the coating failed quickly by a fatigue process due to the drastic reduction in strength above 750 °C, the ductile-brittle transition temperature. These cracks were arrested or slowed by oxidation at the coating-substrate interface and only led to a detriment in life relative to the uncoated material for total strain ranges of 1.2 pet and above 800 °C. The presence of the coating was beneficial at 800 °C for total strain rangesless than 1.2 pet. No effect of the coating was observed at 1000 °C. Crack growth in the substrate at 800 °C was similar to 600 °C; at 1000 °C, greater plasticity and oxidationrwere observed and cracks grew exclusively in a stage II manner.

Isothermal fatigue of an aluminide-coated single-crystal superalloy:Part II. Effects of brittle precracking

The effect of brittle coating precracking on the fatigue behavior of a high-activity aluminide-coated single-crystal nickel-base superalloy has been studied using hollow cylindrical specimens at test temperatures of 600 °C, 800 °C, and 1000 °C. Three types of precrack were studied: narrow precracks formed at room temperature, wide precracks formed at room temperature, and narrow precracks formed at elevated temperature. The effect of precracking on fatigue life at 600 °C was found to depend strongly on the type of precrack. No failure was observed for specimens with narrow room-temperature precracks because of crack arrest via an oxidation-induced crack closure mechanism, while the behavior of wide precracks and precracks formed at elevated temperature mirrored the non-precracked behavior. Crack retardation also occurred for narrow room-temperature precracks tested at 800 °C - in this case, fatigue cracks leading to failure initiated in a layer of recrystallized grains on the inside surface of the specimen. A significant reduction in fatigue life at 800 °C relative to non-precracked specimens was observed for wide precracks and elevated temperature precracks. The presence of precracks bypassed the initiation and growth of coating fatigue cracks necessary for failure in non-precracked material. No effect of precracking was observed at 1000 °C.

Single-crystal micro/nanostructures and thin films of lamellar molybdenum oxide by solid-state pyrolysis of organometallic derivatives of a cyclotriphosphazene

The solid-state pyrolysis of organometallic derivatives of a cyclotriphosphazene is demonstrated to be a new, simple and versatile solid-state templating method for obtaining single-crystal micro- and nanocrystals of transition and valve metal oxides. The technique, when applied to Mo-containing organometallics N3P3[OC6H4CH2CN·Mo(CO)5]6 and N3P3[OC6H4CH2CN·Mo(CO)4 py]6, results in stand-alone and surface-deposited lamellar MoO3 single crystals, as determined by electron and atomic force microscopies and X-ray diffraction. The size and morphology of the resulting crystals can be tuned by the composition of the precursor. X-ray photoelectron and infrared spectroscopies indicate that the deposition of highly lamellar MoO3 directly on an oxidized (400 nm SiO2) surface or (100) single-crystal silicon surfaces yields a layered uniphasic single-crystal film formed by cluster diffusion on the surface during pyrolysis of the metal-carbonyl derivatives. For MoO3 in its layered form, this provides a new route to an important intercalation material for high energy density battery materials.

A first principles analysis of the effect of hydrogen concentration in hydrogenated amorphous silicon on the formation of strained Si-Si bonds and the optical and mobility gaps

In this paper, we use a model of hydrogenated amorphous silicon generated from molecular dynamics with density functional theory calculations to examine how the atomic geometry and the optical and mobility gaps are influenced by mild hydrogen oversaturation. The optical and mobility gaps show a volcano curve as the hydrogen content varies from undersaturation to mild oversaturation, with largest gaps obtained at the saturation hydrogen concentration. At the same time, mid-gap states associated with dangling bonds and strained Si-Si bonds disappear at saturation but reappear at mild oversaturation, which is consistent with the evolution of optical gap. The distribution of Si-Si bond distances provides the key to the change in electronic properties. In the undersaturation regime, the new electronic states in the gap arise from the presence of dangling bonds and strained Si-Si bonds, which are longer than the equilibrium Si-Si distance. Increasing hydrogen concentration up to saturation reduces the strained bonds and removes dangling bonds. In the case of mild oversaturation, the mid-gap states arise exclusively from an increase in the density of strained Si-Si bonds. Analysis of our structure shows that the extra hydrogen atoms form a bridge between neighbouring silicon atoms, thus increasing the Si-Si distance and increasing disorder in the sample.

Hybrid photonic crystal lasers

Energy efficient Wavelength Division Multiplexing (WDM) is the key to satisfying the future bandwidth requirements of datacentres. As the silicon photonics platform is regarded the only technology able to meet the required power and cost efficiency levels, the development of silicon photonics compatible narrow linewidth lasers is now crucial. We discuss the requirements for such laser systems and report the experimental demonstration of a compact uncooled external-cavity mW-class laser architecture with a tunable Si Photonic Crystal resonant reflector, suitable for direct Frequency Modulation.

Characterization of innovative kerfless cutting of monocrystalline silicon wafers for photovoltaic applications

Nowadays renewable energies are a hot research topic, and the goal is to improve cell efficiency and reduce production costs, aiming to make the use of photovoltaics increasingly widespread and convenient. Monocrystalline silicon solar cells are leaders in the photovoltaic market. However, market-established cutting techniques produce a consistent amount of material waste when cutting ingots into wafers. The“Stress-induced LIft-Off Method” (SLIM) is emerging in recent years as an alternative, more sustainable separation technique, which reduces material loss and can lead to obtaining increasingly thinner wafers, further reducing the required amount of silicon. This thesis presents the micro-characterization of the separated wafers with the SLIM technique. The wafers were obtained with a two-step procedure. First, a layer of defects was induced in the silicon using ultra-short medium-infrared laser pulses. Then, the material was deposited on one of the sides and induced stress in the silicon, such as to further weaken it. In this way, only rapid cooling is required for detachment to occur. The obtained results indicate that the SLIM-cut technique halves the minority carriers’ lifetime. There is no amorphization, crystal disorder or high-pressure phases. However, changes in the Raman spectra suggest that tensile stress may have been produced on these surface layers by the separation process. The AFM topography highlights surface irregularities, which may be removed with a polishing step. The surface also shows laser-modified regions, which are evident in SEM images, but not in AFM topographies, suggesting a charging effect due to electron bombardment. Lastly, the electrical characterization by conductive AFM lacks any changes in the conductive behaviour of the material where the laser-modified areas should be located. In conclusion, these preliminary results are promising to carry out a systematic characterization of this technique of this innovative SLIM technique.

The Crystal-t Algorithm: A New Approach To Calculate The Sle Of Lipidic Mixtures Presenting Solid Solutions.

Lipidic mixtures present a particular phase change profile highly affected by their unique crystalline structure. However, classical solid-liquid equilibrium (SLE) thermodynamic modeling approaches, which assume the solid phase to be a pure component, sometimes fail in the correct description of the phase behavior. In addition, their inability increases with the complexity of the system. To overcome some of these problems, this study describes a new procedure to depict the SLE of fatty binary mixtures presenting solid solutions, namely the Crystal-T algorithm. Considering the non-ideality of both liquid and solid phases, this algorithm is aimed at the determination of the temperature in which the first and last crystal of the mixture melts. The evaluation is focused on experimental data measured and reported in this work for systems composed of triacylglycerols and fatty alcohols. The liquidus and solidus lines of the SLE phase diagrams were described by using excess Gibbs energy based equations, and the group contribution UNIFAC model for the calculation of the activity coefficients of both liquid and solid phases. Very low deviations of theoretical and experimental data evidenced the strength of the algorithm, contributing to the enlargement of the scope of the SLE modeling.

Crystal Structure Of (3e)-3-[(4-nitro-phen-oxy)-meth-yl]-4-phenyl-but-3-en-2-one.

In the title compound, C17H15NO4, the conformation about the C=C double bond [1.348 (2) Å] is E with the ketone group almost co-planar [C-C-C-C torsion angle = 7.2 (2)°] but the phenyl group twisted away [C-C-C-C = 160.93 (17)°]. The terminal aromatic rings are almost perpendicular to each other [dihedral angle = 81.61 (9)°] giving the mol-ecule an overall U-shape. The crystal packing feature benzene-C-H⋯O(ketone) contacts that lead to supra-molecular helical chains along the b axis. These are connected by π-π inter-actions between benzene and phenyl rings [inter-centroid distance = 3.6648 (14) Å], resulting in the formation of a supra-molecular layer in the bc plane.

Crystal Structure Of (3e)-3-(2,4-di-nitro-phen-oxy-meth-yl)-4-phenyl-but-3-en-2-one.

In the title compound, C17H14N2O6, the conformation about the C=C double bond [1.345 (2) Å] is E, with the ketone moiety almost coplanar [C-C-C-C torsion angle = 9.5 (2)°] along with the phenyl ring [C-C-C-C = 5.9 (2)°]. The aromatic rings are almost perpendicular to each other [dihedral angle = 86.66 (7)°]. The 4-nitro moiety is approximately coplanar with the benzene ring to which it is attached [O-N-C-C = 4.2 (2)°], whereas the one in the ortho position is twisted [O-N-C-C = 138.28 (13)°]. The mol-ecules associate via C-H⋯O inter-actions, involving both O atoms from the 2-nitro group, to form a helical supra-molecular chain along [010]. Nitro-nitro N⋯O inter-actions [2.8461 (19) Å] connect the chains into layers that stack along [001].

One-dimensional Silicon And Germanium Nanostructures With No Carbon Analogues.

In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that these structures have lower energy than their corresponding nanoribbon structures and are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. Large bandgap variations of almost 50% were observed for strain rates as small as 3%, suggesting their possible applications in sensor devices. They also present high Young's modulus values (0.25 and 0.15 TPa, respectively). TEM images were simulated to help in the identification of these new structures.