Information preservation (IP) method in simulation of internal rarefied gas flows in MEMS

This paper reviews firstly methods for treating low speed rarefied gas flows: the linearised Boltzmann equation, the Lattice Boltzmann method (LBM), the Navier-Stokes equation plus slip boundary conditions and the DSMC method, and discusses the difficulties in simulating low speed transitional MEMS flows, especially the internal flows. In particular, the present version of the LBM is shown unfeasible for simulation of MEMS flow in transitional regime. The information preservation (IP) method overcomes the difficulty of the statistical simulation caused by the small information to noise ratio for low speed flows by preserving the average information of the enormous number of molecules a simulated molecule represents. A kind of validation of the method is given in this paper. The specificities of the internal flows in MEMS, i.e. the low speed and the large length to width ratio, result in the problem of elliptic nature of the necessity to regulate the inlet and outlet boundary conditions that influence each other. Through the example of the IP calculation of the microchannel (thousands m ? long) flow it is shown that the adoption of the conservative scheme of the mass conservation equation and the super relaxation method resolves this problem successfully. With employment of the same measures the IP method solves the thin film air bearing problem in transitional regime for authentic hard disc write/read head length ( 1000 L m ? = ) and provides pressure distribution in full agreement with the generalized Reynolds equation, while before this the DSMC check of the validity of the Reynolds equation was done only for short ( 5 L m ? = ) drive head. The author suggests degenerate the Reynolds equation to solve the microchannel flow problem in transitional regime, thus provides a means with merit of strict kinetic theory for testing various methods intending to treat the internal MEMS flows.

Monte Carlo Modeling of Micro Scale Gas Flows

An information preservation (IP) method has been used to simulate many micro scale gas flows. It may efficiently reduce the statistical scatter inherent in conventional particle approaches such as the direct simulation Monte Carlo (DSMC) method. This paper reviews applications of IP to some benchmark problems. Comparison of the IP results with those given by experiment, DSMC, and the linearized Boltzmann equation, as well as the Navier-Stokes equations with a slip boundary condition, and the lattice Boltzmann equation, shows that the IP method is applicable to micro scale gas flows over the entire flow regime from continuum to free molecular.

Single curved fiber sedimentation under gravity

Dynamics of single curved fiber sedimentation under gravity are simulated by using the lattice Boltzmann method. The results of migration and rotation of the curved fiber at different Reynolds numbers are reported. The results show that the rotation and migration processes are sensitive to the curvature of the fiber. (c) 2007 Elsevier Ltd. All rights reserved.

Solute transport in nanochannels with roughness-like structures

Newfound attention has been given to solute transport in nanochannels. Because the electric double layer (EDL) thickness is comparable to characteristic channel dimensions, nanochannels have been used to separate ionic species with a constant charge-to-size ratio (i.e., electrophoretic mobility) that otherwise cannot be separated in electroosmotic or pressure- driven flow along microchannels. In nanochannels, the electrical fields within the EDL cause transverse ion distributions and thus yield charge-dependent mean ion speeds in the flow. Surface roughness is usually inevitable during microfabrication of microchannels or nanochannels. Surface roughness is usually inevitable during the fabrication of nanochannels. In the present study, we develop a numerical model to investigate the transport of charged solutes in nanochannels with hundreds of roughness-like structures. The model is based on continuum theory that couples Navier-Stokes equations for flows, Poisson-Boltzmann equation for electrical fields, and Nernst-Planck equation for solute transports. Different operating conditions are considered and the solute transport patterns in rough channels are compared with those in smooth channels. Results indicate that solutes move slower in rough nanochannels than in smooth ones for both pressure- driven and electroosmotic flows. Moreover, solute separation can be significantly improved by surface roughness under certain circumstances.

Nearly free molecular heat transfer from a sphere

Consider a sphere immersed in a rarefied monatomic gas with zero mean flow. The distribution function of the molecules at infinity is chosen to be a Maxwellian. The boundary condition at the body is diffuse reflection with perfect accommodation to the surface temperature. The microscopic flow of particles about the sphere is modeled kinetically by the Boltzmann equation with the Krook collision term. Appropriate normalizations in the near and far fields lead to a perturbation solution of the problem, expanded in terms of the ratio of body diameter to mean free path (inverse Knudsen number). The distribution function is found directly in each region, and intermediate matching is demonstrated. The heat transfer from the sphere is then calculated as an integral over this distribution function in the inner region. Final results indicate that the heat transfer may at first increase over its free flow value before falling to the continuum level.

Ground-state energy shifts of H-like Ti under dense and hot plasma conditions

In this study, by adopting the ion sphere model, the self-consistent. field method is used with the Poisson-Boltzmann equation and the Dirac equation to calculate the ground-state energies of H-like Ti at a plasma electron density from 10(22) cm(-3) to 10(24) cm(-3) and the electron temperature from 100 eV to 3600 eV. The ground-state energy shifts of H-like Ti show different trends with the electron density and the electron temperature. It is shown that the energy shifts increase with the increase in the electron density and decrease with the increase in the electron temperature. The energy shifts are sensitive to the electron density, but only sensitive to the low electron temperature. In addition, an accurately fitting formula is obtained to fast estimate the ground-state energies of H-like Ti. Such fitted formula can also be used to estimate the critical electron density of pressure ionization for the ground state of H-like Ti.

Theory of the positive column of a gas discharge

An attempt is made to provide a theoretical explanation of the effect of the positive column on the voltage-current characteristic of a glow or an arc discharge. Such theories have been developed before, and all are based on balancing the production and loss of charged particles and accounting for the energy supplied to the plasma by the applied electric field. Differences among the theories arise from the approximations and omissions made in selecting processes that affect the particle and energy balances. This work is primarily concerned with the deviation from the ambipolar description of the positive column caused by space charge, electron-ion volume recombination, and temperature inhomogeneities.

The presentation is divided into three parts, the first of which involved the derivation of the final macroscopic equations from kinetic theory. The final equations are obtained by taking the first three moments of the Boltzmann equation for each of the three species in the plasma. Although the method used and the equations obtained are not novel, the derivation is carried out in detail in order to appraise the validity of numerous approximations and to justify the use of data from other sources. The equations are applied to a molecular hydrogen discharge contained between parallel walls. The applied electric field is parallel to the walls, and the dependent variables—electron and ion flux to the walls, electron and ion densities, transverse electric field, and gas temperature—vary only in the direction perpendicular to the walls. The mathematical description is given by a sixth-order nonlinear two-point boundary value problem which contains the applied field as a parameter. The amount of neutral gas and its temperature at the walls are held fixed, and the relation between the applied field and the electron density at the center of the discharge is obtained in the process of solving the problem. This relation corresponds to that between current and voltage and is used to interpret the effect of space charge, recombination, and temperature inhomogeneities on the voltage-current characteristic of the discharge.

The complete solution of the equations is impractical both numerically and analytically, and in Part II the gas temperature is assumed uniform so as to focus on the combined effects of space charge and recombination. The terms representing these effects are treated as perturbations to equations that would otherwise describe the ambipolar situation. However, the term representing space charge is not negligible in a thin boundary layer or sheath near the walls, and consequently the perturbation problem is singular. Separate solutions must be obtained in the sheath and in the main region of the discharge, and the relation between the electron density and the applied field is not determined until these solutions are matched.

In Part III the electron and ion densities are assumed equal, and the complicated space-charge calculation is thereby replaced by the ambipolar description. Recombination and temperature inhomogeneities are both important at high values of the electron density. However, the formulation of the problem permits a comparison of the relative effects, and temperature inhomogeneities are shown to be important at lower values of the electron density than recombination. The equations are solved by a direct numerical integration and by treating the term representing temperature inhomogeneities as a perturbation.

The conclusions reached in the study are primarily concerned with the association of the relation between electron density and axial field with the voltage-current characteristic. It is known that the effect of space charge can account for the subnormal glow discharge and that the normal glow corresponds to a close approach to an ambipolar situation. The effect of temperature inhomogeneities helps explain the decreasing characteristic of the arc, and the effect of recombination is not expected to appear except at very high electron densities.

Time-dependent monoenergetic neutron transport in two adjacent semi-infinite media

An exact solution to the monoenergetic Boltzmann equation is obtained for the case of a plane isotropic burst of neutrons introduced at the interface separating two adjacent, dissimilar, semi-infinite media. The method of solution used is to remove the time dependence by a Laplace transformation, solve the transformed equation by the normal mode expansion method, and then invert to recover the time dependence.

The general result is expressed as a sum of definite, multiple integrals, one of which contains the uncollided wave of neutrons originating at the source plane. It is possible to obtain a simplified form for the solution at the interface, and certain numerical calculations are made there.

The interface flux in two adjacent moderators is calculated and plotted as a function of time for several moderator materials. For each case it is found that the flux decay curve has an asymptotic slope given accurately by diffusion theory. Furthermore, the interface current is observed to change directions when the scattering and absorption cross sections of the two moderator materials are related in a certain manner. More specifically, the reflection process in two adjacent moderators appears to depend initially on the scattering properties and for long times on the absorption properties of the media.

This analysis contains both the single infinite and semi-infinite medium problems as special cases. The results in these two special cases provide a check on the accuracy of the general solution since they agree with solutions of these problems obtained by separate analyses.

A mobilidade eletroforética e o perfil de potencial da membrana celular

O objetivo do presente trabalho foi estudar o comportamento dos potenciais superficiais e do perfil de potencial atraves da membrana de eritr ocito em func ao da forca i onica e das cargas superficiais, usando um modelo que leva em conta as cargas el etricas do glicoc alix e das proteınas citoplasm aticas, al em das cargas superficiais da bicamada lipıdica e os efeitos dos eletr olitos divalentes. Programas especıficos em linguagem C foram elaborados para o c alculo desses potenciais, tomando como dados num ericos resultados experimentais de medidas de mobilidade eletrofor etica de eritr ocitos para diferentes valores de forca i onica. Neste c alculo, o metodo para tratamento dos dados eletrofor eticos indicado por Hsu et al.[57] foi incluıdo em nosso modelo. A equac ao de Poisson-Boltzmann nao linear foi resolvida por computac ao num erica, usando o metodo de Runge-Kutta de quarta ordem, obtendo-se os perfis de potencial. Os resultados mostraram que a estimativa da densidade de carga el etrica na superfıcie de c elulas usando a equac ao cl assica de Helmholtz-Smoluchowski conduz a valores que nao conseguem refletir as forcas que regem o comportamento eletrofor etico das mesmas. O presente modelo gerou valores de potenciais superficiais e perfis de potencial para a membrana do eritr ocito bem distintos daqueles obtidos anteriormente para um modelo descrito por uma equac ao de Poisson-Boltzmann linear. Nossos resultados confirmam que a avaliac ao de parametros el etricos superficiais da membrana de eritr ocito, envolvendo dados oriundos de eletroforese, deve incluir c alculos hidrodin amicos al em de eletroest aticos, como sugerido por Hsu et al. [57].

Electrical transport in metallic films

On the basis of the Boltzmann equation, the authors propose a model that includes scattering from both film surfaces and grain boundaries, and have studied the quasiclassical electrical transport in metallic films. The in-plane electric conductivity of metallic films is obtained, and the theoretical results are shown to be in good agreement with experimental data. We also give the relation between temperature coefficient of resistivity and thickness of metallic films and make a comparison with experiment. <(C)> 2004 American Institute of Physics.

Quantum Simulator for Transport Phenomena in Fluid Flows

Transport phenomena still stand as one of the most challenging problems in computational physics. By exploiting the analogies between Dirac and lattice Boltzmann equations, we develop a quantum simulator based on pseudospin-boson quantum systems, which is suitable for encoding fluid dynamics transport phenomena within a lattice kinetic formalism. It is shown that both the streaming and collision processes of lattice Boltzmann dynamics can be implemented with controlled quantum operations, using a heralded quantum protocol to encode non-unitary scattering processes. The proposed simulator is amenable to realization in controlled quantum platforms, such as ion-trap quantum computers or circuit quantum electrodynamics processors.

Nonequilibrium dynamics of photoexcited electrons in graphene: Collinear scattering, Auger processes, and the impact of screening

We present a combined analytical and numerical study of the early stages (sub-100-fs) of the nonequilibrium dynamics of photoexcited electrons in graphene. We employ the semiclassical Boltzmann equation with a collision integral that includes contributions from electron-electron (e-e) and electron-optical phonon interactions. Taking advantage of circular symmetry and employing the massless Dirac fermion (MDF) Hamiltonian, we are able to perform an essentially analytical study of the e-e contribution to the collision integral. This allows us to take particular care of subtle collinear scattering processes - processes in which incoming and outgoing momenta of the scattering particles lie on the same line - including carrier multiplication (CM) and Auger recombination (AR). These processes have a vanishing phase space for two-dimensional MDF bare bands. However, we argue that electron-lifetime effects, seen in experiments based on angle-resolved photoemission spectroscopy, provide a natural pathway to regularize this pathology, yielding a finite contribution due to CM and AR to the Coulomb collision integral. Finally, we discuss in detail the role of physics beyond the Fermi golden rule by including screening in the matrix element of the Coulomb interaction at the level of the random phase approximation (RPA), focusing in particular on the consequences of various approximations including static RPA screening, which maximizes the impact of CM and AR processes, and dynamical RPA screening, which completely suppresses them. © 2013 American Physical Society.

Analysis of the xuv photoabsorption spectrum of Au2+, Au3+, and Au4+

The photoabsorption processes of Au2+, Au3+, and Au4+ have been investigated experimentally and theoretically in the 70-127 eV region. Using the dual laser-produced plasma technique, the 4f and 5p photoabsorption spectrum has been recorded at 50 ns time delay and was found to be dominated by a great number of lines from 4f-5d, 6d and 5p-5d, 6s transitions, which have been identified by comparison with the aid of Hartree-Fock with configuration interaction calculations. The characteristic feature of the spectrum is that satellite lines from excited configurations containing one or two 6s electrons are more important than resonance lines, and with increasing ionization, satellite contributions from states with one 6s spectator electron gradually become more important than those with two 6s spectator electrons. Based on the assumption of a normalized Boltzmann distribution among the excited states and a steady-state collisional-radiative model, we succeeded in reproducing a spectrum which is in good agreement with experiment.

THE APPLICATION OF THE MPB4 THEORY TO THE INTERFACE BETWEEN 2 IMMISCIBLE ELECTROLYTE-SOLUTIONS .2. THE DIFFERENTIAL CAPACITANCE OF THE WATER 1,2-DICHLOROETHANE INTERFACE

The MPB4 theory is used to calculate the differential capacitance of the interface between LiCl in water and TBATPB in 1,2-dichloroethane at electrolyte concentrations of 0.005, 0.01 and 0.02 M. The effects of the ion size and the image force, and the influence of the electrolyte concentration, the surface charge density and the solvent effect on the inner layer potential drop are considered simultaneously. These effects can be ascribed to the ionic penetration into the opposite solution and ion-ion correlations across the interface. Our results are in better agreement with experimental data than those obtained using Gouy-Chapman theory. This indicates that the MPB4 theory may also describe the structure of the water \1,2-dichloroethane interface provided that the influence of the electrolyte concentration, the surface charge density and the solvent effect on the inner layer potential distribution are included in the calculation. Comparison of the theoretical results with those of the water \nitrobenzene interface shows that the structure of the water \1,2-dichloroethane interface is similar to that of the water \nitrobenzene interface, except that in the former case the inner-layer potential drop is much higher and the effects of the image force and the ion size are more pronounced.

THE APPLICATION OF THE MPB4 THEORY TO THE INTERFACE BETWEEN 2 IMMISCIBLE ELECTROLYTE-SOLUTIONS .1. THE DIFFERENTIAL CAPACITANCE OF THE WATER NITROBENZENE INTERFACE

We use the MPB4 theory to calculate the differential capacitance of the interface between NaBr + water and tetrabutylammoniumtetraphenyl borate (TBATPB) + nitrobenzene at electrolyte concentrations of 0.01 M, 0.02 M and 0.05 M. In addition to the effects