不同功率下的飞秒激光在水中形成的脉冲压缩和超连续谱

本文研究了飞秒激光脉冲在水中的传输情况.通过改变不同的激光输入功率进行模拟，我们发现从输入功率略高于到远远高于发生自聚焦的临界功率,分别是群速度色散和多光子电离多光子吸收阻止了自聚焦导致的脉冲塌陷，当多光子电离和多光子吸收主导传输时，脉冲能被压缩到几个光学周期.在频域，多光子电离能引起很强的蓝移,而多光子吸收能对这种蓝移起到抑制作用。

Active phase control and frequency chirp effects on supercontinuum generation in high birefringence photonic crystal fiber

An acoustic-optics programmable dispersive filter (AOPDF) was first employed to actively control the linearly polarized femtosecond pump pulse frequency chirp for supercontinuum (SC) generation in a high birefringence photonic crystal fiber (PCF). By accurately controlling the second order phase distortion and polarization direction of incident pulses, the output SC spectrum can be tuned to various spectral energy distributions and bandwidths. The pump pulse energy and bandwidth are preserved in our experiment. It is found that SC with broader bandwidth can be generated with positive chirped pump pulses except when the chirp value is larger than the optimal value, and the same optimal value exists for the pump pulses polarized along the two principal axes. With optimal positive chirp, more than 78% of the pump energy can be transferred to below 750 nm. Otherwise, negative chirp will weaken the blue-shift broadening and the SC bandwidth. (C) 2007 Elsevier B.V. All rights reserved.

Transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence

We report transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence. After heat-treatment, ZnAl2O4 crystallite was precipitated in the glasses, and its average size increased with increasing heat-treatment temperature. No infrared emission was detected in the as-prepared glass samples, while broadband infrared luminescence centered at 1310 nm with full width at half maximum (FWHM) of about 300 nm was observed from the glass-ceramics. The peak position of the infrared luminescence showed a blue-shift with increasing heat-treatment temperature, but a red-shift with an increase in NiO concentration. The mechanisms of the observed phenomena were discussed. These glass-ceramics are promising as materials for super broadband optical amplifier and tunable laser. (c) 2006 Elsevier Ltd. All rights reserved.

Nonlinear magnetic vortex dynamics in a circular nanodot excited by spin-polarized current

We investigate analytically and numerically nonlinear vortex spin torque oscillator dynamics in a circular magnetic nanodot induced by a spin-polarized current perpendicular to the dot plane. We use a generalized nonlinear Thiele equation including spin-torque term by Slonczewski for describing the nanosize vortex core transient and steady orbit motions and analyze nonlinear contributions to all forces in this equation. Blue shift of the nano-oscillator frequency increasing the current is explained by a combination of the exchange, magnetostatic, and Zeeman energy contributions to the frequency nonlinear coefficient. Applicability and limitations of the standard nonlinear nano-oscillator model are discussed.

Structural and optical properties of YAG : Ce3+ phosphors by sol-gel combustion method

High-quality Ce3+-doped Y3Al5O12 (YAG:Ce3+) phosphors were synthesized by a facile sol-gel combustion method. In this sol-gel combustion process, citric acid acts as a fuel for combustion, traps the constituent cations and reduces the diffusion length of the precursors. The XRD and FT-IR results show that YAG phase can form through sintering at 900 degrees C for 2 h. This temperature is much lower than that required to synthesize YAG phase via the solid-state reaction method. There were no intermediate phases such as YAlO3 (YAP) and Y4Al2O9 (YAM) observed in the sintering process. The average grain size of the phosphors sintered at 900-1100 degrees C is about 40 nm. With the increasing of sintering temperature, the emission intensity increases due to the improved crystalline and homogeneous distribution of Ce3+ ions. A blue shift has been observed in the Ce3+ emission spectrum of YAG:Ce3+ phosphors with increasing sintering temperatures from 900 to 1200 degrees C. It can be explained that the decrease of lattice constant affects the crystal field around Ce3+ ions. The emission intensity of 0.06Ce-doped YAG phosphors is much higher than that of the 0.04Ce and 0.02Ce ones. The red-shift at higher Ce3+ concentrations may be Ce-Ce interactions or variations in the unit cell parameters between YAG:Ce3+ and YAG. It can be concluded that the sol-gel combustion synthesis method provides a good distribution of Ce3+ activators at the molecular level in YAG matrix. (c) 2005 Elsevier B.V. All rights reserved.

Sol-gel combustion synthesis and luminescence Of Y4Al2O9 : Eu3+ nanocrystal

Y4Al2O9:EU3+ phosphor was synthesized through a sol-gel combustion method. The Y4Al2O9 phase can form through sintering at 800 degrees C. This temperature is much lower than that required via the solid state reaction method. The average grain size of the phosphor was about 30 run. Compared with the amorphous phosphor, the charge transfer band of crystalline phosphor shows a blue shift. The emission Of Y4Al2O9:Eu3+ indicates the existence of two luminescent centers, in agreement with the crystal structure of Y4Al2O9. Higher doping concentration could be realized in Y4Al2O9 nanocrystal host lattice. This indicates that the sol-gel combustion synthesis method can increase emission intensity and quenching concentration due to a good distribution of EU3+ activators in Y4Al2O9 host. (c) 2005 Elsevier B.V. All rights reserved.

Cr4+在Al2O3多晶体中的光谱性能研究

Transparent polycrystalline Cr:Al2O3 ceramics were synthesized by conventional pressureless synthesis processing. The absorption and emission spectra of Cr:Al2O3 ceramics specimens before and after annealing were measured at room temperature. It was discovered that the emission spectra of Cr4+ in Al2O3 octahedral coordination site is in infrared wavelength range of 1100-1600 nm. The emission peak of Cr4+ is centered at 1223 nm, which is similar to that of Cr4+ in tetrahedral site. Al2O3 has smaller lattice constant, resulting in the larger crystal field strength, so there is a blue shift in the peak of Cr4+:Al2O3 ceramics compared to those of other Cr4+-doped crystals. And the emission band is much narrower with full width at half maximum Delta lambda 37 nm.

High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates

We studied the structural and optical properties of high Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates by metalorganic chemical vapor deposition (MOCVD). Direct evidences of the gradual evolution of the content of Al, Ga and In along the growth direction were obtained. When the film thickness was over a certain value, however, the AlInGaN epilayer with constant element contents began to form. These results were also supported by the blue shift and splitting of the photoluminescence (PL) peak. For the thinnest epilayer, the surface was featured with outcrops of threading dislocations (TDs) which suggested a spiral growth mode. With increase in thickness, step-flow growth mode and V-shaped pits were observed, and the steps terminated at the pits. (C) 2008 Elsevier B. V. All rights reserved.

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of PL peak wave length. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blue shift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

Fabrication and optical characterization of GaN-based nanopillar light emitting diodes

InGaN/GaN-multiple-quantum-well-based light emitting diode ( LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence ( PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl ( HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.

Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion

AlGaInP/GaInP quantum well intermixing phenomena induced by Zn impurity diffusion at 540 degrees C were studied using room-temperature photo luminescence (PL) spectroscopy. As the diffusion time increased from 40 to 120 min, PL blue shift taken on the AlGaInP/GaInP quantum well regions increased from 36.3 to 171.6 meV. Moreover, when the diffusion time was equal to or above 60 min, it was observed firstly that a PL red shift occurred with a PL blue shift on the samples. After detailed analysis, it was found that the red-shift PL spectra were measured on the Ga0.51In0.49P buffer layer of the samples, and the mechanism of the PL red shift and the PL blue shift were studied qualitatively. (C) 2007 Elsevier B.V. All rights reserved.

Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method

We propose an innovative technique, making use of the In segregation effect, referred as the N irradiation method, to enhance In-N bonding and extend the emission wavelength of GaInNAs quantum wells (QWs). After the formation of a complete In floating layer, the growth is interrupted and N irradiation is initiated. The majority of N atoms are forced to bond with In atoms and their incorporation is regulated independently by the N exposure time and the As pressure. The effect of the N exposure time and As pressure on the N incorporation and the optical quality of GaInNAs QWs were investigated. Anomalous photoluminescence (PL) wavelength red shifts after rapid thermal annealing (RTA) were observed in the N-irradiated samples, whereas a normal GaInNAs sample revealed a blue shift. This method provides an alternative way to extend the emission wavelength of GaInNAs QWs with decent optical quality. We demonstrate light emission at 1546 nm from an 11-nm-thick QW, using this method and the PL intensity is similar to that of a 7-nm-thick GaInNAs QW grown at a reduced rate. (C) 2008 Elsevier B.V. All rights reserved.

The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

Two emission peaks were observed in the low temperature photoluminescence (LTPL) spectra of an InGaN/GaN multiple quantum well (MQW) structure before and after nanopillar fabrication. After nanopillar fabrication it is found that among the two peaks the longer wavelength peak exhibits a clear blue shift and has a much stronger enhancement in LTPL intensity than the shorter one. Combined with x-ray diffraction and spatially resolved cathodoluminescence analyses, the difference induced by nanopillar fabrication is ascribed to different strain relaxation states in the lower and upper quantum well layers. It is found that the lower QW layers of the as-grown MQW which causes the longer wavelength PL peak are more strained, while the upper ones are almost fully strain-relaxed. Therefore, the nanopillar fabrication induces much less strain relaxation in the upper part of the MQW than in the lower one.

Characterization of polymorphous silicon thin film and solar cells

Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).

Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films

The composite films of the nanocrystalline GaAs1-xSbx-SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrystalline GaAs1-xSbx indicated that the PL peaks of the GaAs1-xSbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs1-xSbx-SiO2 composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect.