Time domain synthesis of electro-optical birefringent system for optical waveform generation

In this paper is described a novel technique for producing an electro-optical intensity synthesizer which can generate different periodic time domain waveforms through only sine or cosine wave applied-voltages. The synthesizer presented here consists of a series of stages between two polarizers, with each stage consisting of an electro-optic element and a compensator. Every electro-optical element has the same applied-voltage function but different azimuth angles and ratios between the longitudinal and transverse lengths. The main principle is the synthesis of an electro-optic effect and a polarization interference effect in the time domain. This technique is based on an expanded Fourier positive-direction searching algorithm, which can not only simplify the calculation process but also produces many choices of structural parameters for different waveforms generation. A three-stage synthesis of an electro-optical birefringent system for continuous square waveform is undertaken to prove the principle.

双中心全息记录的矢量分析与记录方向优化

对描述双掺杂晶体非挥发性全息记录动力学过程的Kukhtarev方程进行了矢量分析, 分析中考虑了体光生伏特效应和外加电场的作用。在小信号近似的基础上给出了双中心全息记录中记录与固定阶段空间电荷场的矢量解析解。在综合考虑空间电荷场的各向异性以及晶体有效电光系数的各向异性后, 给出了双中心全息记录的优化记录方向。结果表明, 对(Fe, Mn):LiNbO3晶体633 nm寻常光记录, 优化记录方向主要由有效电光系数决定, 光栅波矢与光轴夹角为22°, 方位角为30°;对(Fe, Mn):LiNbO3晶体633

基于基频分量消光的1/4波片快轴标定方法

提出了一种基于基频分量消光的波片快轴标定方法,并利用琼斯矩阵对其标定原理进行了分析。激光器、起偏器、相位调制器、待标定1/4波片、检偏器和光电探测器构成标定光路,起偏器、检偏器的透光轴与相位调制器的振动轴分别成+45°和0°夹角。准直激光束依次经过起偏器、相位调制器、待标定1/4波片和检偏器,由光电探测器接收。理论分析表明该标定方法标定精度主要取决于检偏器的定位误差。实验验证了该标定方法的有效性,1/4波片快轴标定结果的最大偏差为0.043°,标准差为0.012°,标定精度为0.05°。

四区域法消除偏振棱镜缺陷对波片相位延迟测量的影响

在起偏器待测波片检偏器系统基础上提出一种四区域测量波片相位延迟量的方法。调整待测波片和检偏器的方位角,获得相应的四组光强值,通过线性运算得到待测波片的相位延迟量,完全消除了起偏器和检偏器不完全消光带来的误差。由于测量系统中不存在标准波片或其他相位调制元件,允许测量波长仅受偏振棱镜和探测器的限制,因此四区域法可适用于很大波长范围内的波片测量。以λ/4波片为例,理论分析了测量系统利用四区域测量法后的仪器误差为σ≤±3.49065×10-3rad(约0.2°),精度比原算法提高约1个数量级。实验验证了四区域法能有效提高系统精度。

Análise da tectônica de colocação de diques cretácicos na região de São Sebastião, SP

O trabalho foi desenvolvido no litoral norte do estado de São Paulo, onde ocorrem boas exposições de rochas intrusivas da porção meridional do Enxame de Diques da Serra do Mar, de idade eocretácica. O objetivo principal da dissertação é caracterizar os regimes tectônicos associados à colocação e à deformação de diques máficos na área de São Sebastião (SP) e sua distribuição espacial, a partir de interpretações de imagens de sensores remotos, análise de dados estruturais de campo e descrição petrográfica das rochas ígneas. A área apresenta grande complexidade no tocante ao magmatismo, uma vez que ocorrem diques de diabásios toleítico e alcalino, lamprófiro e rochas alcalinas félsicas como fonolitos, traquitos e sienitos, estes sob a forma diques, sills e plugs. Os diabásios toleíticos tem idades em torno 134 Ma, correlatas com o início do rifteamento sul-atlântico, enquanto que as rochas alcalinas datam de 86 Ma e estão relacionadas com um magmatismo intraplaca posterior. Os lineamentos estruturais orientam-se majoritariamente na direção ENE-WSW, paralela às foliações metamórficas e zonas de cisalhamento observadas no campo e descritas na literatura, referentes ao Domínio Costeiro da Faixa Ribeira. Os diques se orientam na direção NE-SW, com azimute semelhante porém ângulos de mergulho discordantes da foliação em grande parte da área, onde as foliações são de baixo ângulo. Um segundo conjunto de lineamentos orientado NW-SE ocorre como um importante conjunto de fraturas que cortam tanto as rochas do embasamento proterozóico quanto as rochas alcalinas neocretácicas. Diques com esta orientação são escassos. Um terceiro conjunto NNE-SSW ocorre na porção oeste da área, associado à presença de diques de diabásio que por vezes mostram indicadores de movimentação sinistral. A análise cinemática dos diques mostra um predomínio de distensão pura durante sua colocação, com um tensor de compressão mínima de orientação NW-SE, ortogonal ao principal trend dos diques. Componentes direcionais, por vezes ambíguas, são comumente observadas, com um discreto predomínio de componente sinistral. O mesmo padrão cinemático é observado para os diques toleíticos e para os alcalinos, sugerindo que o campo de tensões local pouco variou durante o Cretáceo. Embora o embasamento não tenha sido diretamente reativado durante a colocação dos diques, sua anisotropia pode ter controlado de certa forma a orientação do campo de tensões local durante o Cretáceo. Os mapas geofísicos da bacia de Santos existentes na literatura sugerem certo paralelismo entre as estruturas observadas na área de estudo e aquelas interpretadas na bacia. As estruturas NNE-SSW são paralelas ao trend das sub-bacias e ao gráben de Merluza, enquanto que as estruturas NW-SE são paralelas a zonas de transferência descritas na literatura.

Extended bidirectional reflectance distribution function for polarized light scattering from subsurface defects under a smooth surface

By introducing the scattering probability of a subsurface defect (SSD) and statistical distribution functions of SSD radius, refractive index, and position, we derive an extended bidirectional reflectance distribution function (BRDF) from the Jones scattering matrix. This function is applicable to the calculation for comparison with measurement of polarized light-scattering resulting from a SSD. A numerical calculation of the extended BRDF for the case of p-polarized incident light was performed by means of the Monte Carlo method. Our numerical results indicate that the extended BRDF strongly depends on the light incidence angle, the light scattering angle, and the out-of-plane azimuth angle. We observe a 180 degrees symmetry with respect to the azimuth angle. We further investigate the influence of the SSD density, the substrate refractive index, and the statistical distributions of the SSD radius and refractive index on the extended BRDF. For transparent substrates, we also find the dependence of the extended BRDF on the SSD positions. (c) 2006 Optical Society of America.

Direction and polarisation estimation using polarised cylindrical conformal arrays

In this study, the authors describe two-dimensional direction finding and signal polarisation estimation from a cylindrical conformal array consisting of directional and polarised antenna elements. Firstly, a simple and general transformation procedure, based on the mathematical framework of geometric algebra, is presented for arbitrary conformal arrays with polarised and directional antennas. Subsequently, the authors utilise the symmetry of cylindrical arrays to estimate signal parameters via rotational invariance techniques. The authors show how to iteratively estimate the azimuth and elevation angles of the incident signal, as well as its polarisation. To illustrate the versatility of this method, the results of simulations on a 3×4 cylindrical conformal array are shown and discussed. © 2012 The Institution of Engineering and Technology.

Calculation of the hourly and daily radiation incident on three step tracking planes

Mathematical formulas for estimating the hourly and daily radiation incident on planes of azimuth three step tracking and hour angle three step tracking have been derived in this paper. Based on the hourly solar radiation data of an average day in each month at Er-Lian-Hao-Te city, the hourly and monthly radiation received by planes of these two kinds of tracking have been calculated. The results show that in this district, one axis azimuth three step tracking and hour angle three step tracking could, respectively, obtain 66.5% and 63.3% higher radiation than that on the horizontal surface all year. Moreover, a two axis azimuth three step tracking plane could receive 72% more radiation than the horizontal surface. (C) 2002 Elsevier Science Ltd. All rights reserved.

A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy

A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.

Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction

We presented a series of symmetric double crystal X-ray diffraction (DCXD) measurements, (0 0 4), (2 2 0) and (2 - 2 0) diffraction, to investigate the strain relaxation in an InAs film grown on a GaAs(0 0 1) substrate. The strain tensor and rotation tensor were calculated according to the DCXD results. It is found that the misfit strain is relaxed nearly completely and the strain relaxation caused a triclinic deformation in the epilayer. The lattice parameter along the [1 1 0] direction is a little longer than that along the [1 - 1 0] direction. Furthermore, a significant tilt, 0.2 degrees, towards the [1 1 0] direction while a very slight one: 0.002 degrees, towards [1 - 1 0] direction were discussed. This anisotropic strain relaxation is attributed to the asymmetric distribution of misfit dislocations, which is also indicated by the variation of the full-width at half-maximum (FWHM) of (0 0 4) diffraction along four azimuth angles. (C) 1998 Elsevier Science B.V. All rights reserved.

双面太阳电池垂直安装发电性能的测试

双面太阳电池是一种非常规太阳电池。本文通过建立光伏组件-控制器-蓄电池-负载试验系统，对日立公司双面受光单晶硅太阳电池组件分别在东西和南北朝向情况下垂直地面安装时的功率输出特性进行了测试和分析。根据应用测试结果，总结了双面受光太阳电池的应用优缺点和可能的应用方式。

Effect of reconstruction beam polarization on the kinetics of anisotropic gratings in bacteriorhodopsin

Anisotropic gratings are recorded on bacteriorhodopsin films by two parallelly polarized beams, and the effect of the polarization orientation of the reconstructing beam on the diffraction efficiency kinetics is studied. A theoretical model for the diffraction efficiency kinetics of the anisotropic grating is developed by combining Jones-matrix and photochromic two-state theory. It is found that the polarization azimuth of the reconstructing beam produces a cosine modulation on the kinetics of the diffraction efficiency, being positive at the peak efficiency and negative for steady state. By adding auxiliary violet light during grating formation, the saturation of the grating can be restrained. As a result, the negative cosine modulation for the steady-state diffraction efficiency changes to a positive one. In addition, the steady-state diffraction efficiency is increased appreciably for all reconstructing polarization orientations. (c) 2008 Optical Society of America.

Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques

In this work we investigate the lateral periodicity of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of X-ray scattering techniques. The multilayers were grown by metalorganic Vapour phase epitaxy on (001)GaAs substrates, which were intentionally off-oriented towards the [011]-direction. The substrate off-orientation and the strain distribution was found to affect the structural properties of the superlattices inducing the generation of laterally ordered macrosteps. Several high-resolution triple-crystal reciprocal space maps, which were recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction and contour maps of the specular reflected beam collected in the vicinity of the (000) reciprocal lattice point, are reported and discussed. The reciprocal space maps clearly show a two-dimensional periodicity of the X-ray peak intensity distribution which can be ascribed to the superlattice periodicity in the direction of the surface normal and to a lateral periodicity in a crystallographic direction coinciding with the miscut orientation. The distribution and correlation of the vertical as well as of the lateral interface roughness was investigated by specular reflectivity and diffuse scattering measurements. Our results show that the morphology of the roughness is influenced by the off-orientation angle and can be described by a 2-dimensional waviness.

Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)

We present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat Si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). On all orientations, water adsorption is dissociative (OH and H) and non-destructive. On Si(001) the sticking coefficient S and the saturation coverage Theta(sat) are largest. On Si(001) and for small miscuts in the [110]-azimuth, S is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. For (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. On (115), (113), (5,5,12) and (112), the values of S and Theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. For (113) the shape of the adsorption curves Theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with Langmuir-like kinetics. On (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. From the corresponding values of S and Theta(sat), data for structure models are deduced. (C) 1997 Elsevier Science B.V.

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.