1000 resultados para Anisotropic structure


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We systematically investigate the square-lattice dielectric photonic crystals that have been used to demonstrate flat slab imaging experimentally. A right-handed Bloch mode is found in the left-handed frequency region by using the plane wave expansion method to analyze the photonic band structure and equifrequency contours. Using the multiple scattering theory, numerical simulations demonstrate that the left-handed mode and the right-handed mode are excited simultaneously by a point source and result in two kinds of transmitted waves. Impacted by the evanescent waves, superposition of these transmitted waves brings on complicated near field distributions such as the so-called imaging and its disappearance.

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We present a new efficient numerical approach for representing anisotropic physical quantities and/or matrix elements defined on the Fermi surface (FS) of metallic materials. The method introduces a set of numerically calculated generalized orthonormal functions which are the solutions of the Helmholtz equation defined on the FS. Noteworthy, many properties of our proposed basis set are also shared by the FS harmonics introduced by Philip B Allen (1976 Phys. Rev. B 13 1416), proposed to be constructed as polynomials of the cartesian components of the electronic velocity. The main motivation of both approaches is identical, to handle anisotropic problems efficiently. However, in our approach the basis set is defined as the eigenfunctions of a differential operator and several desirable properties are introduced by construction. The method is demonstrated to be very robust in handling problems with any crystal structure or topology of the FS, and the periodicity of the reciprocal space is treated as a boundary condition for our Helmholtz equation. We illustrate the method by analysing the free-electron-like lithium (Li), sodium (Na), copper (Cu), lead (Pb), tungsten (W) and magnesium diboride (MgB2)

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This paper is the third part of a report on systematic measurements and analyses of wind-generated water waves in a laboratory environment. The results of the measurements of the turbulent flow on the water side are presented here, the details of which include the turbulence structure, the correlation functions, and the length and velocity scales. It shows that the mean turbulent velocity profiles are logarithmic, and the flows are hydraulically rough. The friction velocity in the water boundary layer is an order of magnitude smaller than that in the wind boundary layer. The level of turbulence is enhanced immediately beneath the water surface due to micro-breaking, which reflects that the Reynolds shear stress is of the order u *w 2. The vertical velocities of the turbulence are related to the relevant velocity scale at the still-water level. The autocorrelation function in the vertical direction shows features of typical anisotropic turbulence comprising a large range of wavelengths. The ratio between the microscale and macroscale can be expressed as λ/Λ=a Re Λ n, with the exponent n slightly different from -1/2, which is the value when turbulence production and dissipation are in balance. On the basis of the wavelength and turbulent velocity, the free-surface flows in the present experiments fall into the wavy free-surface flow regime. The integral turbulent scale on the water side alone underestimates the degree of disturbance at the free surface. © 2012 Elsevier B.V.

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Inflatable aerodynamic decelerators present potential advantages for planetary entry in missions of robotic and human exploration. The design of these structures face many engineering challenges, including complex deformable geometries, anisotropic material response, and coupled shockturbulence interactions. In this paper, we describe a comprehensive computational fluid-structure interaction study of an inflation cycle of a tension cone decelerator in supersonic flow and compare the simulations with earlier published experimental results. The aeroshell design and flow conditions closely match recent experiments conducted at Mach 2.5. The structural model is a 16-sided polygonal tension cone with seams between each segment. The computational model utilizes adaptive mesh refinement, large-eddy simulation, and shell mechanics with self-contact modeling to represent the flow and structure interaction. This study focuses on the dynamics of the structure as the inflation pressure varies gradually, and the behavior of forces experienced by the flexible and rigid (the payload capsule) structures. © 2011 by the American Institute of Aeronautics and Astronautics, Inc. All rights reserved.

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Anisotropic exchange splitting (AES) is induced by the joint effects of the electron-hole exchange interaction and the symmetry reduction in quantum wells and quantum dots. A model has been developed to quantitatively obtain the electron-hole exchange energy and the hole-mixing energy of quantum wells and superlattices. In this model, the AES and the degree of polarization can both be obtained from the reflectance difference spectroscopy. Thus the electron-hole exchange energy and the hole-mixing energy can be completely separated and quantitatively deduced. By using this model, a (001)5 nm GaAs/7 nm Al0.3Ga0.7As superlattice sample subjected to [110] uniaxial strains has been investigated in detail. The n=1 heavy-hole (1H1E) exciton can be analyzed by this model. We find that the AES of quantum wells can be linearly tuned by the [110] uniaxial strains. The small uniaxial strains can only influence the hole-mixing interaction of quantum wells, but have almost no contribution to the electron-hole exchange interaction. (c) 2008 American Institute of Physics.

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The electronic structure, Zeeman splitting, and g factor of Mn-doped CdS nanowires are studied using the k center dot p method and the mean field model. It is found that the Zeeman splittings of the hole ground states can be highly anisotropic, and so can their g factors. The hole ground states vary a lot with the radius. For thin wire, g(z) (g factor when B is along the z direction or the wire direction) is a little smaller than g(x). For thick wire, g(z) is mcuh larger than g(x) at small magnetic field, and the anisotropic factor g(z)/g(x) decreases as B increases. A small transverse electric field can change the Zeeman splitting dramatically, so tune the g(x) from nearly 0 to 70, in thick wire. The anisotropic factor decreases rapidly as the electric field increases. On the other hand, the Zeeman splittings of the electron ground states are always isotropic.

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By the method of finite difference, the anisotropic spin splitting of the AlxGa1-xAs/GaAs/AlyGa1-yAs/AlxGa1-xAs step quantum wells (QWs) are theoretically investigated considering the interplay of the bulk inversion asymmetry and structure inversion asymmetry induced by step quantum well structure and external electric field. We demonstrate that the anisotropy of the total spin splitting can be controlled by the shape of the QWs and the external electric field. The interface related Rashba effect plays an important effect on the anisotropic spin splitting by influencing the magnitude of the spin splitting and the direction of electron spin. The Rashba spin splitting presents in the step quantum wells due to the interface related Rashba effect even without external electric field or magnetic field.

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A thermo-optic Mach-Zehnder (MZ) variable optical attenuator based on silicon waveguides with a large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer. Multimode interferometers were used as power splitters and combiners in the MZ structure. In order to achieve a smooth interface, anisotropic chemical etching of silicon was used to fabricate the waveguides. Isolating grooves were introduced to reduce power consumption and device length. The device has a low power consumption of 210 mW and a response time of 50 mus. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

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The electronic structure, Zeeman splitting, and Stark shift of In1-yMnyAs1-xNx oblate quantum dots are studied using the ten-band k center dot p model including the sp-d exchange interaction between the carriers and the magnetic ion. The Zeeman splitting of the electron ground states is almost isotropic. The Zeeman splitting of the hole ground states is highly anisotropic, with an anisotropy factor of 918 at B=0.1 T. The Zeeman splittings of some of the electron and hole excited states are also highly anisotropic. It is because of the spin-orbit coupling which couples the spin states with the anisotropic space-wave functions due to the anisotropic shape. It is found that when the magnetic quantum number of total orbital angular momentum is nearly zero, the spin states couple with the space-wave functions very little, and the Zeeman splitting is isotropic. Conversely, if the magnetic quantum number of total orbital angular momentum is not zero, the space-wave functions in the degenerate states are different, and the Zeeman splitting is highly anisotropic. The electron and hole Stark shifts of oblate quantum dots are also highly anisotropic. The decrease of band gap with increasing nitrogen composition is much more obvious in the smaller radius case because the lowest conduction level is increased by the quantum confinement effect and is closer to the nitrogen level. (C) 2007 American Institute of Physics.

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The electronic structure and Zeeman splittings of wurtzite Cd1-xMnxSe quantum spheres are studied using the k center dot p method and mean-field model. It is interesting to find that the Zeeman splittings of some hole states in quantum spheres are highly anisotropic due to the spin-orbit coupling and wurtzite crystal structure. The anisotropy of the Zeeman splittings of hole ground states in large dots is large, while that in small dot is small because the hole ground states vary with radius. An external electrical field can change the Zeeman splitting significantly, and tune the g factor from nearly 0 to about 100.

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A systematic study of the phase formation, structure and magnetic properties of the R3Fe29-xTx compounds (R=Y, Ce, Nd, Sm, Gd, Tb, and Dy; T=V and Cr) has been performed upon hydrogenation. The lattice constants and the unit cell volume of R3Fe29-xTxHy decrease with increasing R atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Regular anisotropic expansions mainly along the a- and b-axis rather than along the c-axis are observed for all of the compounds upon hydrogenation. Hydrogenation leads to an increase in the Curie temperature and a corresponding increase in the saturation magnetization at room temperature for each compound. First order magnetization processes (FOMP) occur in the external magnetic fields for Nd3Fe24.5Cr4.5H5.0, Tb3Fe27.0Cr2.0H2.8, and Gd3Fe28.0Cr1.0H4.2 compounds.

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A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique.

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Lanthanide hexaaluminates including LaMgAl11O19, NdMgAl11O19, SmMgAl11O19 and GdMgAl11O19 were synthesized via Sol-Gel method. Due to the anisotropic crystal growth, these oxides crystallize in the form of platelets and the platelet thickness increases with the decrease of rare-earth ionic radius. It was observed that the thermal-shock resistances of LaMgAl11O19, NdMgAl11O19 and SmMgAl11O19 oxides were superior to 8YSZ as proved by water quenching tests. In addition, the thinner the platelet. the more interstices are retained in the sintered specimen, and the better thermal-shock resistance the oxide has. Based on SEM images, it can be seen that the SmMgAl11O19 sample exhibits a mixture of the intergranular and transgranular fracture after thermal cycling failure.

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Experiments as well as computer modeling methods have been used to investigate the effect of the solder reflow process on the electrical characteristics and reliability of anisotropic conductive film (ACF) interconnections. In the experiments, the contact resistance of the ACF interconnections was found to increase after a subsequent reflow and the magnitude of this increase was strongly correlated to the peak temperature of the reflow profile. In fact, nearly 40 percent of the joints were opened (i.e. lifted away from the pad) after the reflow with a peak temperature of 260 OC while no openings was observed when the peak temperature was 210 "C. It is believed that the CTE mismatch between the polymer particle and the adhesive matrix is the main cause of this contact degradation. To understand this phenomenon better, a 3-D model of an ACF joint structure was built and Finite Element Analysis was used to predict the stress distrihution in the conductive particles, adhesive matrix and metal pads during the reflow process. The effects of the peak temperature, the CTE of the adhesive matrix and the bump height on the reliability of the ACF interconnections were discussed.

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In this paper, the effects of the solder reflow process on the reliability of anisotropic conductive film (ACF) interconnections for flip chip on flex (FCOF) applications are investigated. Experiments as well as computer modeling methods have been used. In the experiments, it was found that the contact resistance of ACF joints increased after the subsequent reflow process, and the magnitude of this increase was strongly correlated to the peak temperature of the reflow profile. Nearly 40% of the joints were opened (i.e. lifted away from the pad) after the reflow process with 260 °C peak temperature while no opening was observed when the peak temperature was 210 °C. It is believed that the CTE mismatch between the polymer particle and the adhesive matrix is the main cause of this contact degradation. It was also found that the ACF joints after the reflow process with 210 °C peak temperature showed a high ability to resist water absorption under steady state 85 °C/85%RH conditions, probably because the curing degree of the ACF was improved during the reflow process. To give a good understanding, a 3D model of an ACF joint structure was built and finite element analysis was used to predict the stress distribution in the conductive particles, adhesive matrix and metal pads during the reflow process.