Tapered bow-tie lasers for high energy Q-switched pulse generation

A new kind of Q switched laser, the bow tie laser is introduced. This type of laser permits large area facets at both ends so that generation of high optical powers involve low optical intensities to prevent optical damage. The incorporation of doubled tapered waveguide structure to the Q switched multicontact laser has increased the optical pulse energies and peak powers of the laser.

Demonstration of multi wavelength picosecond pulse generation with resonant RF drive using an monolithically integrated multi-grating cavity (MGC) laser

Multiwavelength pulses were generated using a monolithically integrated device. The device used is an integrated InGaAs/InGaAsP/InP multi-wavelength laser fabricated by selective area regrowth. The device self pulsated on all of the four wavelength channels. 48 ps pulses were obtained which were measured by a 50GHz oscilloscope and 32GHz photodiode which was not bandwidth limited. Simultaneous multi-wavelength pulse generation was also achieved.

Multi-wavelength picosecond pulse generation using a monolithically integrated Multi-wavelength Grating Cavity (MGC) laser

Multi-wavelength picosecond pulses are demonstrated using a single monolithically integrated Multi-wavelength Grating Cavity (MGC) laser. This is achieved on two WDM wavelength channels at a repetition rate of 7.63 GHz.

High-power and picosecond pulse generation from a passively Q-switched tapered InGaAs/GaAs laser

Tapered waveguides have been used for enhancing pulse powers in Q-switched AlGaAs and InGaAsP lasers. This paper reports on passively Q-switched pulses with 1.53 W peak power and 41-ps FWHM from an InGaAs/GasAs (970 nm) double-contact tapered semiconductor laser in a well defined single-lobed far-field.

Broadband ultrafast pulse generation with double wall carbon nanotubes

Materials with nonlinear optical properties are much sought after for ultrafast photonic applications. Mode-locked lasers can generate ultrafast pulses using saturable absorbers[1]. Currently, the dominant technology is based on semiconductor saturable absorber mirrors (SESAMs). However, narrow tuning range (tens of nm), complex fabrication and packaging limit their applications[2]. Single wall nanotubes (SWNTs) and graphene offer simpler and cost-effective solutions[1]. Broadband operation can be achieved in SWNTs using a distribution of tube diameters[1,3], or by using graphene[4-8], due to the gapless linear dispersion of Dirac electrons[8,9]. © 2011 IEEE.

External-cavity mode-locked quantum-dot laser diodes for low repetition rate, sub-picosecond pulse generation

This paper presents an investigation of the mode-locking performance of a two-section external-cavity mode-locked InGaAs quantum-dot laser diode, focusing on repetition rate, pulse duration and pulse energy. The lowest repetition rate to-date of any passively mode-locked semiconductor laser diode is demonstrated (310 MHz) and a restriction on the pulse energy (at 0.4 pJ) for the shortest pulse durations is identified. Fundamental mode-locking from 310 MHz to 1.1 GHz was investigated, and harmonic mode-locking was achieved up to a repetition rate of 4.4 GHz. Fourier transform limited subpicosecond pulse generation was realized through implementation of an intra-cavity glass etalon, and pulse durations from 930fs to 8.3ps were demonstrated for a repetition rate of 1 GHz. For all investigations, mode-locking with the shortest pulse durations yielded constant pulse energies of ∼0.4 pJ, revealing an independence of the pulse energy on all the mode-locking parameters investigated (cavity configuration, driving conditions, pulse duration, repetition rate, and output power). © 2011 IEEE.