984 resultados para 791 Public performances (incl. film)


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Families living with autism often feel unable to attend social and cultural events largely due to the fear of their child attracting negative or even aggressive reactions from others. The ‘joint attention’ that is part of the theatre experience however may be a powerful factor in the development of social and communication skills for such children. ‘Relaxed performances’ offer an opportunity for them to access and engage with theatre by making special arrangements designed to reduce tensions associated with visits to public places. Aspects of the production such as the use of lighting and sound effects which may trigger adverse reactions are also adjusted. This paper reports on how one local theatre drew on the findings of a national project to mount a ‘relaxed performance’ of their annual pantomime. It discusses the theatre’s preparations and presents evidence of the impact the event had on local children with autism and their families. The success of both the national and this local project marks a new beginning for improved access to the theatre for an audience that has hitherto felt largely excluded.

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Includes bibliography

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Includes bibliography

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Este artigo visa apresentar uma análise das representações femininas contidas no filme Garotas e Samba (1957), dirigido por Carlos Manga, por meio de seu enredo, personagens e marchinhas carnavalescas. Essa produção pertence ao gênero cinematográfico conhecido como chanchada, considerado um tipo de comédia musical que recebeu influências diversas, advindas do circo, do carnaval, do rádio, do teatro de variedades e do cinema estrangeiro. O carnaval representado no filme é o das músicas das rádios – principalmente das marchinhas carnavalescas, que favoreciam sátiras e inversões – e dos bailes de salão – onde eram utilizadas fantasias estilizadas e curtas, típicas do período. Este filme evidencia, de forma clara, o “mundo às avessas” apresentado pelas chanchadas, uma vez que as mulheres aparecem em uma posição muito mais ativa no espaço público em relação à situação real de grande parte das mulheres dos anos 1950. Não obstante, o filme expressou representações ora conservadoras, ora ousadas a respeito da mulher, demonstrando a ambiguidade de uma sociedade em fase de transição.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Plastic solar cells bear the potential for large-scale power generation based on flexible, lightweight, inexpensive materials. Since the discovery of the photo-induced electron transfer from a conjugated polymer (electron-donor) to fullerene or its derivatives molecules (electron-acceptors), followed by the introduction of the bulk heterojunction concept which means donors and acceptors blended together to realize the fotoactive layer, materials and deposition techniques have been extensively studied. In this work, electrochemical-deposition methods of polymeric conductive films were studied in order to realize bulk heterojunction solar cells. Indium Tin Oxide (ITO) glass electrodes modified with a thin layer of poly(3,4-ethylenedioxythiophene) (PEDOT) were electrochemically prepared under potentiodynamic and potentiostatic conditions; then those techniques were applied for the electrochemical co-deposition of donor and acceptor on modified ITO electrode to produce the active layer (blend). For the deposition of the electron-donor polymer the electropolymerization of many functionalized thiophene monomers was investigated while, as regards acceptors, fullerene was used first, then the study was focused on its derivative PCBM ([6,6]-phenyl-C61-butyric acid methyl ester). The polymeric films obtained (PEDOT and blend) were electrochemically and spectrophotometrically characterized and the film thicknesses were evaluated by atomic force microscopy (AFM). Finally, to check the performances and the efficiency of the realized solar cells, tests were carried out under standard conditions. Nowadays bulk heterojunction solar cells are still poorly efficient to be competitively commercialized. A challenge will be to find new materials and better deposition techniques in order to obtain better performances. The research has led to several breakthroughs in efficiency, with a power conversion efficiency approaching 5 %. The efficiency of the solar cells produced in this work is even lower (lower than 1 %). Despite all, solar cells of this type are interesting and may represent a cheaper and easier alternative to traditional silicon-based solar panels.

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One of the most diffused electronic device is the field effect transistor (FET), contained in number of billions in each electronic device. Organic optoelectronics is an emerging field that exploits the unique properties of conjugated organic materials to develop new applications that require a combination of performance, low cost and processability. Organic single crystals are the material with best performances and purity among the variety of different form of organic semiconductors. This thesis is focused on electrical and optical characterization of Rubrene single crystal bulk and thin films. Rubrene bulk is well known but for the first time we studied thin films. The first Current-voltage characterization has been performed for the first time on three Rubrene thin films with three different thickness to extract the charge carriers mobility and to assess its crystalline structure. As results we see that mobility increase with thickness. Field effect transistor based on Rubrene thin films on $SiO_2$ have been characterize by current-voltage (I-V) analyses (at several temperatures) and reveals a hopping conduction. Hopping behavior probably is due to the lattice mismatch with the substrate or intrinsic defectivity of the thin films. To understand effects of contact resistance we tested thin films with the Transmission Line Method (TLM) method. The TLM method revealeds that contact resistance is negligible but evidenced a Schottky behavior in a limited but well determined range of T. To avoid this effect we carried out annealing treatment after the electrode evaporation iswe performed a compete I-V characterization as a function of in temperature to extract the electronic density of states (DOS) distribution through the Space Charge Limited Current (SCLC) method. The results show a DOS with an exponential trenddistribution, as expected. The measured mobility of thin films is about 0.1cm^2/Vs and it increases with the film thickness. Further studies are necessary to investigate the reason and improve performances. From photocurrent spectrum we calculated an Eg of about 2.2eV and both thin films and bulk have a good crystal order. Further measurement are necessary to solve some open problems

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The aim of the present work was to make more accessible a documentary film that focuses on the life and work of the Russian journalist killed in Moscow in 2006: Anna Politkovskaja. The film, entitled “Anna, seven years at the frontline” is a collage of several video-interviews with Politkovskaja’s friends and colleagues, in which they talk about who she was, what was her job about and how she tried to make the public aware about the Chechen wars. Working on this translation gave me a unique opportunity to deepen one of the most controversial issues in the recent history of Russia and to create a useful final product for those who have a particular interest in this topic but do not have the necessary linguistic competence to understand this documentary film.

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Finlandia University's Nordic Film Series, a free event open to the public, will feature two viewings of "To My Son in Spain: Finnish Canadians in the Spanish Civil War," with writer Dr. Saku Pinta available for questions. This documentary features the story of Jules Päiviö (1916-2013), who was the last surviving Canadian volunteer of the Mackenzie-Papineau Battallion of the “International Brigades”.

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Finlandia University's Nordic Film Series, a free event open to the public, will feature two viewings of "To My Son in Spain: Finnish Canadians in the Spanish Civil War," with writer Dr. Saku Pinta available for questions. This documentary features the story of Jules Päiviö (1916-2013), who was the last surviving Canadian volunteer of the Mackenzie-Papineau Battallion of the “International Brigades”.

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Ahead of the World Cup in Brazil the crucial question for the Swiss national coach is the nomination of the starting eleven central back pair. A fuzzy set Qualitative Comparative Analysis assesses the defensive performances of different Swiss central back pairs during the World Cup campaign (2011 – 2014). This analysis advises Ottmar Hitzfeld to nominate Steve von Bergen and Johan Djourou as the starting eleven central back pair. The alternative with a substantially weaker empirical validity would be Johan Djourou together with Phillippe Senderos. Furthermore, this paper aims to be a step forward in mainstream football analytics. It analyses the undervalued and understudied defense (Anderson and Sally 2012, Statsbomb 2013) by explaining collective defensive performances instead of assessments of individual player or team performances. However, a qualitatively (better defensive metrics) and quantitatively (more games) improved and extended data set would allow for a more sophisticated analysis of collective defensive performances.

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INTRODUCTION blaOXA-48, blaNDM-1 and blaCTX-M-3 are clinically relevant resistance genes, frequently associated with the broad-host range plasmids of the IncL/M group. The L and M plasmids belong to two compatible groups, which were incorrectly classified together by molecular methods. In order to understand their evolution, we fully sequenced four IncL/M plasmids, including the reference plasmids R471 and R69, the recently described blaOXA-48-carrying plasmid pKPN-El.Nr7 from a Klebsiella pneumoniae isolated in Bern (Switzerland), and the blaSHV-5 carrying plasmid p202c from a Salmonella enterica from Tirana (Albania). METHODS Sequencing was performed using 454 Junior Genome Sequencer (Roche). Annotation was performed using Sequin and Artemis software. Plasmid sequences were compared with 13 fully sequenced plasmids belonging to the IncL/M group available in GenBank. RESULTS Comparative analysis of plasmid genomes revealed two distinct genetic lineages, each containing one of the R471 (IncL) and R69 (IncM) reference plasmids. Conjugation experiments demonstrated that plasmids representative of the IncL and IncM groups were compatible with each other. The IncL group is constituted by the blaOXA-48-carrying plasmids and R471. The IncM group contains two sub-types of plasmids named IncM1 and IncM2 that are each incompatible. CONCLUSION This work re-defines the structure of the IncL and IncM families and ascribes a definitive designation to the fully sequenced IncL/M plasmids available in GenBank.

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Durante los últimos años el flujo de datos en la transmisión que tiene lugar en los sistemas de comunicación ha aumentado considerablemente de forma que día a día se requieren más aplicaciones trabajando en un rango de frecuencias muy alto (3-30 GHz). Muchos de estos sistemas de comunicación incluyen dispositivos de onda acústica superficial (SAW) y por tanto se hace necesario el aumento de frecuencia a la que éstos trabajan. Pero este incremento de frecuencia de los dispositivos SAW no sólo es utilizado en los sistemas de comunicación, varios tipos de sensores, por ejemplo, aumentan su sensibilidad cuando la frecuencia a la que trabajan también lo hace. Tradicionalmente los dispositivos SAW se han fabricado sobre cuarzo, LiNbO3 y LiTaO3 principalmente. Sin embargo la principal limitación de estos materiales es su velocidad SAW. Además, debido a la alta temperatura a la que se depositan no pueden ser integrados en la tecnología de fabricación CMOS. El uso de la tecnología de capa delgada, en la que un material piezoeléctrico es depositado sobre un substrato, se está utilizando en las últimas décadas para incrementar la velocidad SAW de la estructura y poder obtener dispositivos trabajando en el rango de frecuencias requerido en la actualidad. Por otra parte, esta tecnología podría ser integrada en el proceso de fabricación CMOS. Durante esta tesis nos hemos centrado en la fabricación de dispositivos SAW trabajando a muy alta frecuencia. Para ello, utilizando la tecnología de capa delgada, hemos utilizado la estructura nitruro de aluminio (AlN) sobre diamante que permite conseguir velocidades SAW del sustrato que no se pueden alcanzar con otros materiales. El depósito de AlN se realizó mediante sputtering reactivo. Durante esta tesis se han realizado diferentes experimentos para optimizar dicho depósito de forma que se han obtenido los parámetros óptimos para los cuales se pueden obtener capas de AlN de alta calidad sobre cualquier tipo de sustrato. Además todo el proceso se realizó a baja temperatura para que el procesado de estos dispositivos pueda ser compatible con la tecnología CMOS. Una vez optimizada la estructura AlN/diamante, mediante litografía por haz de electrones se fabricaron resonadores SAW de tamaño nanométrico que sumado a la alta velocidad resultante de la combinación AlN/diamante nos ha permitido obtener dispositivos trabajando en el rango de 10-28 GHz con un alto factor de calidad y rechazo fuera de la banda. Estás frecuencias y prestaciones no han sido alcanzadas por el momento en resonadores de este tipo. Por otra parte, se han utilizado estos dispositivos para fabricar sensores de presión de alta sensibilidad. Estos dispositivos son afectados altamente por los cambios de temperatura. Se realizó también un exhaustivo estudio de cómo se comportan en temperatura estos resonadores, entre -250ºC y 250ºC (rango de temperaturas no estudiado hasta el momento) diferenciándose dos regiones una a muy baja temperatura en la que el dispositivo muestra un coeficiente de retraso en frecuencia (TCF) relativamente bajo y otra a partir de los -100ºC en la que el TCF es similar al observado en la bibliografía. Por tanto, durante esta tesis se ha optimizado el depósito de AlN sobre diamante para que sea compatible con la tecnología CMOS y permita el procesado de dispositivos trabajando a muy alta frecuencia con altas prestaciones para comunicaciones y sensores. ABSTRACT The increasing volume of information in data transmission systems results in a growing demand of applications working in the super-high-frequency band (3–30 GHz). Most of these systems work with surface acoustic wave (SAW) devices and thus there is a necessity of increasing their resonance frequency. Moreover, sensor application includes this kind of devices. The sensitivity of them is proportional with its frequency. Traditionally, quartz, LiNbO3 and LiTaO3 have been used in the fabrication of SAW devices. These materials suffer from a variety of limitations and in particular they have low SAW velocity as well as being incompatible with the CMOS technology. In order to overcome these problems, thin film technology, where a piezoelectric material is deposited on top of a substrate, has been used during the last decades. The piezoelectric/substrate structure allows to reach the frequencies required nowadays and could be compatible with the mass electronic production CMOS technology. This thesis work focuses on the fabrication of SAW devices working in the super-high-frequency range. Thin film technology has been used in order to get it, especially aluminum nitride (AlN) deposited by reactive sputtering on diamond has been used to increase the SAW velocity. Different experiments were carried out to optimize the parameters for the deposit of high quality AlN on any kind of substrates. In addition, the system was optimized under low temperature and thus this process is CMOS compatible. Once the AlN/diamond was optimized, thanks to the used e-beam lithography, nanometric SAW resonators were fabricated. The combination of the structure and the size of the devices allow the fabrication of devices working in the range of 10-28 GHz with a high quality factor and out of band rejection. These high performances and frequencies have not been reached so far for this kind of devices. Moreover, these devices have been used as high sensitivity pressure sensors. They are affected by temperature changes and thus a wide temperature range (-250ºC to 250ºC) study was done. From this study two regions were observed. At very low temperature, the temperature coefficient of frequency (TCF) is low. From -100ºC upwards the TCF is similar to the one appearing in the literature. Therefore, during this thesis work, the sputtering of AlN on diamond substrates was optimized for the CMOS compatible fabrication of high frequency and high performance SAW devices for communication and sensor application.