On new or insufficiently-known Chytridinae [Translation from: Archiv fur Protistenkunde 54 168-173 + pl.9, 1926]

This partial translation of a larger paper provides taxonomic descriptions of 5 fungal zoospores species: Olpidium vampyrellae, 0. pseudosporearum, 0. leptophrydis, Rhizophidium leptophrydis and Chytridium lateoperculatum.

Towards a knowledge of chytrids. Part 3. Spirospora paradoxa nov.gen. - nov.spec. [Translation from: Archiv fur Protistenkunde 54 510-528 [pages 522-525 and plate 28 only], 1926]

This partial translation of the original paper provides morphological observations on the fungus Spirospora paradoxa. Illustrations are included here.

Front pages with contents of No. 54, 1994

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Front pages with contents of No. 54 and 55, 1995, Spanish version

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铒玻璃在1．54μm实现1 Hz下3 J和5 Hz下0．6 J的激光输出

近年来,随着激光告警、激光指示、风速测量、激光雷达尤其是激光美容等方面的需求逐渐增加,要求掺铒激光玻璃能够实现比以往更高重复频率以及更大能量的激光输出,其中对脉冲能量的要求达1～10 J。

不同基因型小麦（Triticum aestivum）京411与小偃54抗光氧化特性及其机理的比较研究

对两种不同基因型小麦京411（北京地区高产小麦品种）和小偃54（在生产上已应用二十年的优良品种）幼苗及旗叶光抑制特性进行了比较研究，着重探讨了它们抗光氧化的差异及其机理，主要结果如下： 1. 强光条件下，同京411相比小偃54能保持较高的光合色素含量和放氧速率。其DCPIP光还原活性也较高。 2. 光谱特性分析表明，强光胁迫下小偃54在红区及蓝区的特征性吸收峰及F683荧光发射峰下降的幅度明显小于京411相应峰位的下降。 3. 色素蛋白复合物分析表明，强光条件下，京411色素蛋白复合物中LHCII聚合体大量的解聚，而小偃54在强光条件下仍能保持较高比例的LHCII聚合体。这可能在一定的程度上有利于小偃54在强光下维持较强的激发能耗散的能力。 4. 多肽SDS-PAGE分析表明，强光对不同基因型小麦中同PSII光抑制敏感性有关的两个外周蛋白23kD和17kD的影响不同。光抑制明显地降低了京411的23kD和17kD的含量，而对于小偃54中这两个外周蛋白23kD和17kD的影响不大。强光条件下小偃54旗叶PSII颗粒中捕光色素蛋白27kD含量提高，而京411捕光色素蛋白27kD含量明显的下降。 5. 上述结果表明，西北地区的优良小麦品种小偃54同北京地区的高产品种京411相比更耐强光的胁迫，其抗光氧化的能力较强。 6. 进一步分析表明，同京411相比，小偃54抗光氧化的主要原因是其不仅含有较大的叶黄素循环的色素库，而且在强光下能维持高的VDE酶活性及高水平的叶黄素循环的脱环化水平。 7. 叶黄素循环色素在两个小麦品种类囊体膜色素蛋白复合体中的分布存在差异，抗光氧化的小偃54大部分的VAZ分布在PSII上，其中绝大部分集中在LHCII聚合体上。LHCII上VAZ的集中分布可能有利于在强光下对过多光能的耗散，减少过多激发能对PSII的损伤。 8. 类囊体膜流动性分析表明，叶黄素循环参与了对类囊体膜流动性的调整，对维持强光下抗光氧化品种小偃54的类囊体膜相对稳定起重要作用。 9. 依赖于叶黄素循环的热耗散是抗光氧化品种小偃54的一个主要的光保护途径。

Energy transfer and enhanced 1.54 μm emission in Erbium-Ytterbium disilicate thin films.

α-(Yb1-xErx)2Si2O7 thin films on Si substrates were synthesized by magnetron co-sputtering. The optical emission from Er3+ ions has been extensively investigated, evidencing the very efficient role of Yb-Er coupling. The energy-transfer coefficient was evaluated for an extended range of Er content (between 0.2 and 16.5 at.%) reaching a maximum value of 2 × 10⁻¹⁶ cm⁻³s⁻¹. The highest photoluminescence emission at 1535 nm is obtained as a result of the best compromise between the number of Yb donors (16.4 at.%) and Er acceptors (1.6 at.%), for which a high population of the first excited state is reached. These results are very promising for the realization of 1.54 μm optical amplifiers on a Si platform.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED