Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation

While the thermodynamic nonequilibrium properties of nanoparticles are being extensively studied, the thermodynamic nonequilibrium properties of their counterpart: nanocavities, however, are less noticed. Here, we systematically review and comprehensively model the recently published results on the newly-found thermodynamic nonequilibriurn properties of nanocavities in covalently bound materials during energetic beam irradiation. We also review and model the thermodynamic nonequilibrium properties of nanoparticles. The review and modelling not only demonstrates the novel nonequilibriurn properties of such an open-volume nanostructure during external excitation but also gives a deep insight into the nonequilibrium thermodynamics of amorphous structures and the difference in the behaviours of defects in crystalline and in amorphous silicon. Especially, the review and modelling leads to two new concepts:anti-symmetry relation between a nanoparticle and a nanocavity；energetic beam induced-soft mode and lattice instability in condensed matter；which reveals that structure of a condensed matter would be unstable not only at nanosize scale but also at a nanotime scale in general. It is also reveals that such nanoinstabilities would be more pronounced in an amorphous structure than in a crystalline structure.

Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100)

An n-InP-based InGaAsP multiple-quantum-well wafer was bonded with p-Si by chemical surface activated bonding at 70 degrees C, and then annealed at 450 degrees C. Different thermal expansion coefficients between InP and Si will induce thermal stresses in the bonded wafer. Planar and cross-sectional distributions of thermal stress in the bonded InP-Si pairs were analyzed by a two-dimensional finite element method. In addition, the normal, peeling, and shear stresses were calculated by an analytic method. Furthermore, x-ray double crystalline diffraction was applied to measure the thermal strain and the strain caused by the mismatching of the crystalline orientation between InP (100) and Si (100). The wavelength redshift of the photoluminescence (PL) spectrum due to thermal strain was investigated via the calculation of the band structure, which is in agreement with the measured PL spectra.

MnSb/porous silicon hybrid structure prepared by physical vapor deposition

MnSb/porous silicon hybrid structure was prepared by physical vapor deposition technique. The structure and surface morphology of the MnSb films were analyzed by X-ray diffraction and scanning electron microscope, respectively. The magnetic hysteresis loops were obtained by an alternative gradient magnetometer. Based on the measurements, only MnSb phase was found and the surface morphology was rough and island-like. MnSb thin films show ferromagnetism at room temperature. (C) 2003 Elsevier B.V. All rights reserved.

Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.

Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots

The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally. Such a barrier has been predicted by previous theories. From the deep-level transient spectroscopy (DLTS) measurements, we have obtained the electron and hole energy levels of quantum dots E-e(QD-->GaAs) = 0.13 eV and E-h(QD-->GaAs) = 0.09 eV relative to the bulk unstrained GaAs band edges E-c and E-v. DLTS measurements have also provided evidence to the existence of the capture barriers of quantum dots for electron E-eB = 0.30 eV and hole E-hB = 0.26 eV. The barriers can be explained by the apexes appearing in the interface between InAs and GaAs caused by strain. Combining the photoluminescence results, the band structures of InAs and GaAs have been determined.

Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.

Reduction-Based Model Updating of a Scaled Offshore Platform Structure

This paper attempts to develop a reduction-based model updating technique for jacket offshore platform structure. A reduced model is used instead of the direct finite-element model of the real structure in order to circumvent such difficulties as huge degrees of freedom and incomplete experimental data that are usually civil engineers' trouble during the model updating. The whole process consists of three steps: reduction of FE model, the first model updating to minimize the reduction error, and the second model updating to minimize the modeling error of the reduced model and the real structure. According to the performance of jacket platforms, a local-rigidity assumption is employed to obtain the reduced model. The technique is applied in a downscale model of a four-legged offshore platform where its effectiveness is well proven. Furthermore, a comparison between the real structure and its numerical models in the following model validation shows that the updated models have good approximation to the real structure. Besides, some difficulties in the field of model updating are also discussed.

Separation of potential and kinetic electron emission from Si and W induced by multiply charged neon and argon ions

T he total secondary electron emission yields, gamma(T), induced by impact of the fast ions Neq+ (q = 2-8) and Arq+ (q = 3-12) on Si and Neq+ (q = 2-8) on W targets have been measured. It was observed that for a given impact energy, gamma(T) increases with the charge of projectile ion. By plotting gamma(T) as a function of the total potential energy of the respective ion, true kinetic and potential electron yields have been obtained. Potential electron yield was proportional to the total potential energy of the projectile ion. However, decrease in potential electron yield with increasing kinetic energy of Neq+ impact on Si and W was observed. This decrease in potential electron yield with kinetic energy of the ion was more pronounced for the projectile ions having higher charge states. Moreover, kinetic electron yield to energy-loss ratio for various ion-target combinations was calculated and results were in good agreement with semi-empirical model for kinetic electron emission.

Surface modification of bioactive glass nanoparticles and the mechanical and biological properties of poly(L-lactide) composites

Novel bioactive glass (13G) nanoparticles/poly(L-lactide) (PLLA) composites were prepared as promising bone-repairing materials. The BG nanoparticles (Si:P:Ca = 29:13:58 weight ratio) of about 40 run diameter were prepared via the sol-gel method. In order to improve the phase compatibility between the polymer and the inorganic phase, PLLA (M-n = 9700 Da) was linked to the surface of the BG particles by diisocyanate. The grafting ratio of PLLA was in the vicinity of 20 wt.%. The grafting modification could improve the tensile strength, tensile modulus and impact energy of the composites by increasing the phase compatibility.

Poly(oligothiophene-alt-benzothiadiazole)s: Tuning the Structures of Oligothlophene Units toward High-Mobility "Black" Conjugated Polymers

A series of donor-acceptor low-bandgap conjugated polymers, i.e., PTnBT (n = 2-6), composed of alternating oligothiophene (OTh) and 2,1,3-benzothiadiazole (BT) units were synthesized by Stille cross-coupling polymerization. The number of thiophene rings in OTh units, that is n, was tuned from 2 to 6. All these polymers display two absorption bands in both solutions and films with absorption maxima depending on n. From solution to film, absorption spectra of the polymers exhibit a noticeable red shift. Both high- and low-energy absorption bands or P'F5BT and PT6BT films locate in the visible region, which are at 468 and 662 nm for PT5BT and 494 and 657 nm for PT6BT.

Integrated processing-structure-property analysis on rubber in-mold vulcanization

On the basis of the quantitative relationship among rubber processing, structure and property, the methodology of the integrated processing-structure-property analysis on rubber in-mold vulcanization is presented, and then the temporal evolution and spatial distribution characteristics of silicone rubber hot processing parameters, crosslinking structure parameters and mechanical property parameters are obtained by means of the finite element method. The present work is helpful for optimizing curing conditions, and then the design of rubber vulcanization processes according to certain requirements can be done.

Solvent Vapor-Induced Self Assembly and its Influence on Optoelectronic Conversion of Poly(3-hexylthiophene): Methanofullerene Bulk Heterojunction Photovoltaic Cells

Nanoscale-phase separation of electron donor/acceptor blends is crucial for efficient charge generation and collection in Polymer bulk heterojunction photovoltaic cells. We investigated solvent vapor annealing effect of poly(3-hexylthiophene) (P3HT)/methanofullerene (PCBM) blend oil its morphology and optoelectronic properties. The organic solvents of choice for the treatment have a major effect oil the morphology of P3HT/PCBM blend and the device performance. Ultraviolet-visible absorption spectro,;copy shows that specific solvent vapor annealing can induce P3HT self-assembling to form well-ordered structure; and hence, file absorption in the red region and the hole transport are enhanced. The solvent that has a poor Solubility to PCBM Would cause large PCBM Clusters and result in a rough blend film. By combining an appropriate solvent vapor treatment and post-thermal annealing of the devices, the power conversion efficiency is enhanced.

An Extremely High Molar Extinction Coefficient Ruthenium Sensitizer in Dye-Sensitized Solar Cells: The Effects of pi-Conjugation Extension

We report a heteroleptic ruthenium complex (007) featuring the electron-rich 5-octyl-2,2'-bis(3,4-ethylenedioxythiophene) moiety conjugated with 2,2-bipyridine and exhibiting 10.7% power conversion efficiency measured at the AM1.5G conditions, thanks to the enhanced light-harvesting that is closely related to photocurrent. This C107 sensitizer has an extremely high molar extinction coefficient,of 27.4 x 10(3) M-1 cm(-1) at 559 nm in comparison to its analogue C103 (20.5 x 10(3) M-1 cm(-1) at 550 nm) or Z907 (12.2 x 10(3) M(-1)cm(-1) at 521 nm) with the corresponding 5-hexyl-3,4-ethylenedioxythiopliene- or nonyl-substituted bipyridyl unit. The augmentation of molar extinction coefficients and the bathochromic shift of low-energy absorption peaks along with the pi-conjugation extension are detailed by TD-DFT calculations. The absorptivity of mesoporous titania films grafted with Z907, C103, or C107 sublinearly increases with the molar extinction coefficient of sensitizers, which is consistent with the finding derived from the surface coverage measurements that the packing density of those sensitizers decreases with the geometric enlargement of ancillary ligands.

Solvent-vapor treatment induced performance enhancement of poly(3-hexylthiophene): methanofullerene bulk-heterojunction photovoltaic cells

The authors report enhanced poly(3-hexylthiophene) (P3HT):methanofullerene (PCBM) bulk-heterojunction photovoltaic cells via 1,2-dichlorobenzene (DCB) vapor treatment and thermal annealing. DCB vapor treatment can induce P3HT self-organizing into ordered structure leading to enhanced absorption and high hole mobility. Further annealing the device at a high temperature, PCBM molecules begin to diffuse into aggregates and together with the ordered P3HT phase form bicontinuous pathways in the entire layer for efficient charge separation and transport. Compared to the control device that is merely annealed, optical absorption, short-circuit current, and power conversion efficiency are increased for the DCB vapor-treated cell.

Preparation, structure, and properties of three-dimensional ordered alpha-Fe2O3 nanoparticulate film

alpha-Fe2O3 nanoparticulate films could be formed on the surface of alpha-Fe2O3 hydrosol after aging of the hydrosol or by compressing of the nanoparticles on the sol surface, in. which a three-dimensional ordered structure was constructed by the Langmuir-Blodgett; technique and colloid chemical methods. The structure of the LB film was characterized by AFM, TEM, XPS, and UV-vis spectra and small-angle X-ray diffraction. Gas-sensing measurement shows that the LB film has good sensitivity to alcohols at room temperature,