Determination of resonant frequencies of triangular and rectangular microstrip antennas, using artificial neural networks

This paper presents models that can be used in the design of microstrip antennas for mobile communications. The antennas can be triangular or rectangular. The presented models are compared with deterministic and empirical models based on artificial neural networks (ANN) presented in the literature. The models are based on Perceptron Multilayer (PML) and Radial Basis Function (RBF) ANN. RBF based models presented the best results. Also, the models can be embedded in CAD systems, in order to design microstrip antennas for mobile communications.

Weight vector estimation of circular arrays of antennas using Artificial Neural Networks

This paper presents a model for the control of the radiation pattern of a circular array of antennas, shaping it to address the radiation beam in the direction of the user, in order to reduce the transmitted power and to attenuate interference. The control of the array is based on Artificial Neural Networks (ANN) of the type RBF (Radial Basis Functions), trained from samples generated by the Wiener equation. The obtained results suggest that the objective was reached.

New contributions to the determination of resonance frequencies of rectangular microstrip antennas by neural networks

This paper uses artificial neural networks (ANN) to compute the resonance frequencies of rectangular microstrip antennas (MSA), used in mobile communications. Perceptron Multi-layers (PML) networks were used, with the Quasi-Newton method proposed by Broyden, Fletcher, Goldfarb and Shanno (BFGS). Due to the nature of the problem, two hundred and fifty networks were trained, and the resonance frequency for each test antenna was calculated by statistical methods. The estimate resonance frequencies for six test antennas were compared with others results obtained by deterministic and ANN based empirical models from the literature, and presented a better agreement with the experimental values.

Broadband NIR emission in novel sol-gel Er3+-doped SiO 2-Nb2O5 glass ceramic planar waveguides for photonic applications

This paper reports on the sol-gel preparation and structural and optical characterization of new Er3+-doped SiO2-Nb 2O5 nanocomposite planar waveguides. Erbium-doped (100-x)SiO2-xNb2O5 waveguides were deposited on silica-on-silicon substrates and Si(1 0 0) by the dip-coating technique. The waveguides exhibited uniform refractive index distribution across the thickness, efficient light injection at 1538 nm, and low losses at 632 and 1538 nm. The band-gap values lied between 4.12 eV and 3.55 eV for W1-W5, respectively, showing an excellent transparency in the visible and near infrared region for the waveguides. Fourier Transform Infrared (FTIR) Spectroscopy analysis evidenced SiO2-Nb2O5 nanocomposite formation with controlled phase separation in the films. The HRTEM and XRD analyses revealed Nb2O5 orthorhombic T-phase nanocrystals dispersed in a silica-based host. Photoluminescence (PL) analysis showed a broad band emission at 1531 nm, assigned to the 4I13/2 → 4I15/2 transition of the Er3+ ions present in the nanocomposite, with a full-width at half medium of 48-68 nm, depending on the niobium content and annealing. Hence, these waveguides are excellent candidates for application in integrated optics, especially in EDWA and WDM devices. © 2012 Elsevier B.V. All rights reserved.

Antenas compactas de microondas de banda larga e banda ultra-larga (UWB)

Nos últimos anos, com o surgimento de novos serviços e equipamentos para o sistema de comunicação móvel com maiores larguras de banda de operação e ocupando espaços cada vez menores, o desenvolvimento de novas antenas de bandas largas e com dimensões pequenas se tornou um dos principais desafios das pesquisas na área de antenas. Neste trabalho, duas estruturas de antenas de bandas largas e dimensões reduzidas foram analisadas e otimizadas. Na primeira parte, a antena filamentar monopolo dobrado (Wire Built-in Folded Monopole Antenna, W-BFMA) foi investigada e teve sua largura de banda otimizada, conectada a linha de alimentação em diferentes impedâncias. Para modelar a estrutura da antena W-BFMA foi usado o método numérico dos momentos (Method of Moments - MoM), e para sua otimização os métodos: paramétrico, hill climbing e algoritmo genético (AG). Programas computacionais baseados na linguagem Matlab foram desenvolvidos para modelagem, otimização e cálculos das principais curvas características da antena W-BFMA. Na segunda parte, duas diferentes configurações de antenas monopolos planos usando a tecnologia de banda ultra-larga (Ultra- Wideband Antenna, UWB) foram investigadas e otimizadas com a ajuda do programa comercial Computer Simulation Technology (CST) Microwave Studio. Ambas as antenas UWB foram alimentadas por uma linha de microfita (microstrip line) na impedância de 50Ω. A antena UWB que apresentou melhor resultado teve o seu protótipo construído, as principais curvas características, tais como: perda de retorno, ganho, distribuição de corrente e diagrama de radiação foram analisadas. Os resultados simulados foram comparados com resultados obtidos experimentalmente.

Projeto de um monopolo Hi para aplicações no sistema brasileiro de TV digital

A presente pesquisa trata o projeto e análise de uma antena monopolo planar com geometria modificada visando sua utilização para recepção do sinal de TV digital operante no Brasil na faixa de 470 MHz a 806 MHz. Faixa essa contida no espectro de UHF – Ultra High Frequency (300 MHz a 3 GHz). Para desenvolvimento desse trabalho foi tomado como referência à antena denominada “The Hi Monopole”. Que originalmente foi apresentada para operar em sistemas UWB (Ultra Wide Band) em 3,1 a 10,6 GHz. Para o desenvolvimento do trabalho proposto, diferentes técnicas de adequação da antena podem ser utilizadas para operação em banda larga, tais como: modificação na estrutura da antena, carregamento resistivo, chaveamento, utilização de elementos parasitas e estruturas de casamento. O projeto de antenas banda larga pode ser realizado a partir de três abordagens diferentes: domínio do tempo, domínio da frequência e método de expansão por singularidades. O método no domínio da frequência foi empregado neste trabalho para o projeto da antena proposta, algumas das técnicas supracitadas foram analisadas almejando o aumento da largura de banda, sendo confeccionado um protótipo da antena para validar os conceitos empregados. A antena foi então projetada para a faixa de 470 MHz a 890 MHz. O protótipo construído para essa mesma faixa apresentou bons resultados, o que valida à técnica empregada. Aspectos positivos e negativos do uso desta técnica são discutidos ao longo do trabalho. O programa computacional comercial CST® MICROWAVE STUDIO, baseado na Técnica da Integração Finita (FIT), foi usado para simulações no domínio da frequência.

Amphiphilic planar membranes in ionic equilibrium: a study of pH position-dependent values

The pH values near a planar dissociating membrane are studied under a mean field approximation using the Poisson-Boltzmann equation and its linear form. The equations are solved in planar symmetry with the consideration that the charge density on the dissociating membrane surface results from an equilibrium process with the neighboring electrolyte. Results for the membrane dissociation degree are presented as a function of the electrolyte ionic strength and membrane surface charge density. Our calculations indicate that pH values have an appreciable variation within 2 nm from the membrane. It is shown that the dissociation process is enhanced due to the presence of bivalent ions and that pH values acquire better stability than in an electrolyte containing univalent ions.

Fractional fermion charges induced by axial-vector and vector gauge potentials and parity anomaly in planar graphenelike structures

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Darboux invariants for planar polynomial differential systems having an invariant conic

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Zero, minimum and maximum relative radial acceleration for planar formation flight dynamics near triangular libration points in the Earth-Moon system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Normal Forms for Codimension One Planar Piecewise Smooth Vector Fields

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Análise de métodos de mapeamento de perigo: uma proposta de elaboração de mapeamento de perigo de escorregamento planar de solo via utilização do método participativo

This final assignment aimed to promote a critical analysis of methods of preparation mappings danger of landslide and presentation of proposed development from the use of participative method, as an instrument to facilitate the identification of adverse geological processes. There search was executed from literature review about concept associated with geological dangers theme and the typology and characteristics of gravitational mass movements. We analyzed particularly the so-called methods of mapping danger tradicional/classic and alternative. It is believed, that integrating the work of specialists with the participation of involvedagents (local community and stake holders). This literature review and proposed work do noted in itself. You need the continuing advance in the discussion, debates and research on this topic as well as public policies that act on problems identified more concretely

Chaotic planar piecewise smooth vector fields with non-trivial minimal sets

In this paper some aspects on chaotic behavior and minimality in planar piecewise smooth vector fields theory are treated. The occurrence of non-deterministic chaos is observed and the concept of orientable minimality is introduced. Some relations between minimality and orientable minimality are also investigated and the existence of new kinds of non-trivial minimal sets in chaotic systems is observed. The approach is geometrical and involves the ordinary techniques of non-smooth systems.

Diodo planar orgânico Schottky: construção e caracterização

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Fabricação e caracterização de diodo Schottky orgânico com arquitetura planar

Usually organic polymeric diodes are made with a semiconductor layer placed between two electrodes in a sandwich-like architecture, where the electrodes are deposited on the surfaces of a polymeric semiconductor film. This methodology leads to two main problems: i) the polymeric film top surface is rough and irregular, resulting in non-uniform electric field into the device; ii) during the deposition of metallic electrode in the top surface polymeric film, by thermal evaporation, occurs the diffusion of metal atoms into the polymeric film, changing the material electronic structure. Thus, the metal-semiconductor junction is not well defined, which is essential for the production of good quality Schottky diode, which exhibits ideality factor close to the unity and low turn-on voltage. In order to avoid these two problems, in the present research was proposed to manufacture an organic diode with the semiconductor polymeric layer deposited over bimetallic (gold and aluminum) interdigitated electrodes. The doping of the active layer was performed by immersing the device in hydrochloric acid solution with pH 2 during different times in order to promote different doping levels of the semiconductor polymer. Was verified that the proposed diode, which exhibits well-defined metal-semiconductor junction, operates as a Schottky diode, with good ideality factor, 10 ± 3, and low turn-on voltage, 1,2 ± 0,2 V, in comparison with conventional organic polymeric diodes. Contrasting with the ideality factor and turn-on voltage, the diode rectification ratio was obtained as 7, a value lower than the expected for a good organic diode. Was also showed that the diode characteristics were dependent on the semiconductor polymer doping level, and that the diode characteristics were optimized with doping promoted by immersion in the acid solution for times longer than 50 s. Furthermore, as was showed that the diodes properties are dependent on the semiconductor...