A simple linear magnetic field sweep generator for magnetic resonance experiments

A simple and inexpensive linear magnetic field sweep generating system suitable for magnetic resonance experiments is described. The circuit, utilising a modified IC bootstrap configuration, generates field sweep over a wide range of sweep durations with excellent sweep linearity.

Profile simulations of gas chopping etching processes : model development and comparison with experiments

The progress in microsystem technology or nano technology places extended requirements to the fabrication processes. The trend is moving towards structuring within the nanometer scale on the one hand, and towards fabrication of structures with high aspect ratio (ratio of vertical vs. lateral dimensions) and large depths in the 100 µm scale on the other hand. Current procedures for the microstructuring of silicon are wet chemical etching and dry or plasma etching. A modern plasma etching technique for the structuring of silicon is the so-called "gas chopping" etching technique (also called "time-multiplexed etching"). In this etching technique, passivation cycles, which prevent lateral underetching of sidewalls, and etching cycles, which etch preferably in the vertical direction because of the sidewall passivation, are constantly alternated during the complete etching process. To do this, a CHF3/CH4 plasma, which generates CF monomeres is employed during the passivation cycle, and a SF6/Ar, which generates fluorine radicals and ions plasma is employed during the etching cycle. Depending on the requirements on the etched profile, the durations of the individual passivation and etching cycles are in the range of a few seconds up to several minutes. The profiles achieved with this etching process crucially depend on the flow of reactants, i.e. CF monomeres during the passivation cycle, and ions and fluorine radicals during the etching cycle, to the bottom of the profile, especially for profiles with high aspect ratio. With regard to the predictability of the etching processes, knowledge of the fundamental effects taking place during a gas chopping etching process, and their impact onto the resulting profile is required. For this purpose in the context of this work, a model for the description of the profile evolution of such etching processes is proposed, which considers the reactions (etching or deposition) at the sample surface on a phenomenological basis. Furthermore, the reactant transport inside the etching trench is modelled, based on angular distribution functions and on absorption probabilities at the sidewalls and bottom of the trench. A comparison of the simulated profiles with corresponding experimental profiles reveals that the proposed model reproduces the experimental profiles, if the angular distribution functions and absorption probabilities employed in the model is in agreement with data found in the literature. Therefor the model developed in the context of this work is an adequate description of the effects taking place during a gas chopping plasma etching process.

KAM: Automatic Planning and Interpretation of Numerical Experiments Using Geometrical Methods

KAM is a computer program that can automatically plan, monitor, and interpret numerical experiments with Hamiltonian systems with two degrees of freedom. The program has recently helped solve an open problem in hydrodynamics. Unlike other approaches to qualitative reasoning about physical system dynamics, KAM embodies a significant amount of knowledge about nonlinear dynamics. KAM's ability to control numerical experiments arises from the fact that it not only produces pictures for us to see, but also looks at (sic---in its mind's eye) the pictures it draws to guide its own actions. KAM is organized in three semantic levels: orbit recognition, phase space searching, and parameter space searching. Within each level spatial properties and relationships that are not explicitly represented in the initial representation are extracted by applying three operations ---(1) aggregation, (2) partition, and (3) classification--- iteratively.

Categorization in IT and PFC: Model and Experiments

In a recent experiment, Freedman et al. recorded from inferotemporal (IT) and prefrontal cortices (PFC) of monkeys performing a "cat/dog" categorization task (Freedman 2001 and Freedman, Riesenhuber, Poggio, Miller 2001). In this paper we analyze the tuning properties of view-tuned units in our HMAX model of object recognition in cortex (Riesenhuber 1999) using the same paradigm and stimuli as in the experiment. We then compare the simulation results to the monkey inferotemporal neuron population data. We find that view-tuned model IT units that were trained without any explicit category information can show category-related tuning as observed in the experiment. This suggests that the tuning properties of experimental IT neurons might primarily be shaped by bottom-up stimulus-space statistics, with little influence of top-down task-specific information. The population of experimental PFC neurons, on the other hand, shows tuning properties that cannot be explained just by stimulus tuning. These analyses are compatible with a model of object recognition in cortex (Riesenhuber 2000) in which a population of shape-tuned neurons provides a general basis for neurons tuned to different recognition tasks.