Electron trapping materials for use in a picosecond infrared streak camera

We describe our research on the employment of an infrared upconversion screen made of electron trapping material (ETM) in combination with the high sensitivity of the S-20 photocathode responsive to visible radiation to produce a streak camera arrangement capable of viewing and recording infrared incident pulses. The ETM-based upconversion screen converts 800-1600 nm infrared radiation to visible light which is viewed or recorded by the S-20 photocathode. The peak values of the upconversion efficiency are located at 1165 nm for CaS:Eu, Sm and 1060 nm for CaS:Ce, Sm. The present experiment showed time resolution was 12.3 ps for a CaS:Eu, Sm screen and 8.4 ps for a CaS:Ce, Sm screen. The minimum detectability is 4.8 x 10(-9) J/mm(2) (minimum detectability of the coupled visible streak camera is 8.3x10(-10) J/mm(2)). Other parameters, such as spatial resolution and dynamic range, have also been measured and analyzed. The results show ETM can be used in the measurement of infrared ultrafast phenomena up to picosecond time domain. In consideration of the limited number of trapped electrons in ETM, the infrared-sensitive streak camera consisting of an ETM-based upconversion screen is suitable to operate in the single shot mode. (C) 1999 American Institute of Physics. [S0034-6748(99)00112-4].

Near infrared lights emission of Ar-40(16+) impacting on metal surfaces

The highly charged ion Ar-40(16+) with the velocity (kinetic energy E (K)=150 keV, velocity V=8.5x10(5) m/s) smaller than Bohr velocity (V (Bohr)=2.9x10(6) m/s) was found to hove impacts on the surfaces of metals Ni, Mo, Au and Al, and the Ar atomic infrared light lines and X-rays spectra were simultaneously measured. The experimental results show that the highly charged ion that captures electrons is neutralized, and the multiply-excited hollow atom forms. The hollow atom cascade decay radiates lights from infrared to X-ray spectrum. The intensity of infrared lights shows that the metallic work functions play an important role in the neutralization process of highly charged ions during their interaction with metallic surfaces, which verifies the classical over-the-barrier model.

双面二维硅微条探测器的沾污失效分析及修复；Contamination failure analysis and repairing for double side two dimensional silicon microstrip detectors

硅微条探测器通过微电子工艺制作,易因沾污导致性能下降甚至失效;裸露的键合引线,也易因机械力形成隐性或显性失效。对上述现象的研究可用于修复、维护探测器并在设计和工艺流程中改进其性能。本文通过光学、电气手段分析其结构和制作工艺流程,根据沾污性质在不同条件下清洗探测器,中测后根据芯片图形、封装方式和电气要求修复探测器,最后采用同位素α能谱测试修复效果。对一块沾污后失效(无法加载偏压)的硅微条清洗后在大气环境,N面接地,P面加载负偏压条件下进行了测试,结果显示:170 V全耗尽,平均漏电流2.94μA,5.486 MeV的α峰能量分辨率约1.28%。失效键合所在条的另一面各条能谱观测到假峰,键合修复后消除。因沾污失效的硅微条探测器经过合适的清洗、修复,部分可以恢复性能,但清洗对表面和结构有损伤,须谨慎。另外,键合失效后,因信号不能引出导致的电荷积累会通过电容效应影响其它灵敏区。文章提示,探测器应存放于洁净,恒温,低湿度,避光,避强电磁干扰的环境,以提高能量和位置分辨率,并增加工作稳定性,延长使用寿命。

低速~(40)Ar~(17+)离子入射金属Be表面发射的近红外光谱线和X射线谱；Infrared Light and X-ray Emissions of ~(40)Ar~(17+) Impacting on Be Surface ；

用速度不同的(动能EK=272和357keV,速度v=1.14×106和1.72×106m/s)的高电荷态离子40Ar17+分别入射金属Be表面,同时测量这种相互作用过程中产生的近红外光谱线和X射线谱。实验结果表明,在低速范围内(速度小于玻尔速度vBohr=2.19×106m/s),速度较小的40Ar17+离子在到达金属的表面临界距离Rc到进入表面(2—3原子层)的进程中,形成了较多的高激发态Ar原子,其退激辐射较强的光谱线,进而验证了经典过垒模型。

Segmented HPGe平面型位置灵敏探测器阵列的γ成像分析；Gamma-ray imaging analysis by using array of segmented planar HPGe detectors

探测器位置分辨能力的高低是实现γ成像的一个重要指标.Segmented HPGe平面型位置灵敏探测器能够很好地给出γ射线与探测器晶体相互作用的作用点位置信息.利用由这种探测器组成的探测器阵列对~(22)Na标准源进行了γ成像实验.结果能够区分出标准源两个不同的摆放位置的细微差别,并与实际情况符合得很好.从而检验了Segmented HPGe平面型位置灵敏探测器的位置分辨能力.