994 resultados para hot electron jet


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Polycrystalline diamond coatings are grown on Si (100) substrate by hot filament CVD technique. We investigate here the effect of substrate roughening on the substrate temperature and methane concentration required to maintain high quality, high growth rate and faceted morphology of the diamond coatings. It has been shown that as we increase the substrate roughness from 0.05 mu m to 0.91 mu m (centre line average or CLA) there is enhancement in deposited film quality (Raman peak intensity ratio of sp (3) to non-sp (3) content increases from 1.65 to 7.13) and the substrate temperature can be brought down to 640A degrees C without any additional substrate heating. The coatings grown at adverse conditions for sp (3) deposition has cauliflower morphology with nanocrystalline grains and coatings grown under favourable sp (3) condition gives clear faceted grains.

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The migrating electrons in biological systems normally are extraneous and taking this into account the electron delocalisation across the hydrogen bonds in proteins is re-examined. It is seen that an extraneous electron can travel rapidly via the low-lying virtual orbitals of the hydrogen-bonded π-electronic structure of peptide units in proteins. The frequency of electron transfer decreases slowly with an increase in the path length. However, the coupling of electron and protonic motions enhances this frequency. Transfer of electrons across the hydrogen bonds in accordance with the double-exchange mechanism does not appear to be possible. This theory offers a possibility for an extraneous electron to transfer within protein structures.

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For the first time, the impact of energy quantisation in single electron transistor (SET) island on the performance of hybrid complementary metal oxide semiconductor (CMOS)-SET transistor circuits has been studied. It has been shown through simple analytical models that energy quantisation primarily increases the Coulomb Blockade area and Coulomb Blockade oscillation periodicity of the SET device and thus influences the performance of hybrid CMOS-SET circuits. A novel computer aided design (CAD) framework has been developed for hybrid CMOS-SET co-simulation, which uses Monte Carlo (MC) simulator for SET devices along with conventional SPICE for metal oxide semiconductor devices. Using this co-simulation framework, the effects of energy quantisation have been studied for some hybrid circuits, namely, SETMOS, multiband voltage filter and multiple valued logic circuits. Although energy quantisation immensely deteriorates the performance of the hybrid circuits, it has been shown that the performance degradation because of energy quantisation can be compensated by properly tuning the bias current of the current-biased SET devices within the hybrid CMOS-SET circuits. Although this study is primarily done by exhaustive MC simulation, effort has also been put to develop first-order compact model for SET that includes energy quantisation effects. Finally, it has been demonstrated that one can predict the SET behaviour under energy quantisation with reasonable accuracy by slightly modifying the existing SET compact models that are valid for metallic devices having continuous energy states.

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Flow through a rectangular Passage which is expanded suddenly into another rectangular duct of larger Cross-sectional area has been studied experimentally with stagnation Pressures from 3.5 atmospheres to 1.25 atmospheres. The length to height ratio of the enlarged duct varied from 5.769 to 1.923 and three models with length to height ratios 5.769, 3.846, and 1.923 were studied. The influence of stagnation Pressures and length to height ratio of the enlarged duct on base pressure and flow field mean pressures in the enlarged duct is discussed. The results of the present investigation indicate that the oscillatory nature of the mean pressure flow field in the enlarged portion with rectangular cross-section is appreciably different from that for circular cross-section at similar flow conditions.

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The hot deformation behaviors of β brass in the temperature range of 550°C to 800°C and α-β brass in the temperature range of 450°C to 800°C have been characterized in the strain rate range of 0.001 to 100 s−1 using processing maps developed on the basis of the Dynamic Materials Model. The map for β brass revealed a domain of superplasticity in the entire temperature range and at strain rates lower than 1 s−1, with a maximum efficiency of power dissipation of about 68 pct. The temperature variation of the efficiency of power dissipation in the domain is similar to that of the diffusion coefficient for zinc in β brass, confirming that the diffusion-accommodated flow controls the superplasticity. The material undergoes microstructural instability in the form of adiabatic shear bands and strain markings at temperatures lower than 700°C and at strain rates higher than 10 s−1. The map for α-β brass revealed a wide domain for processing in the temperature range of 550°C to 800°C and at strain rates lower than 1 s−1, with a maximum efficiency of 54 pct occurring at about 750°C and 0.001 s−1. In the domain, the α phase undergoes dynamic recrystallization and controls the hot deformation of the alloy, while the β phase deforms superplastically. At strain rates greater than 1 s−1, α-β brass exhibits microstructural instabilities manifested as flow rotations at lower temperatures and localized shear bands at higher temperatures.

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A computer code is developed as a part of an ongoing project on computer aided process modelling of forging operation, to simulate heat transfer in a die-billet system. The code developed on a stage-by-stage technique is based on an Alternating Direction Implicit scheme. The experimentally validated code is used to study the effect of process specifics such as preheat die temperature, machine ascent time, rate of deformation, and dwell time on the thermal characteristics in a batch coining operation where deformation is restricted to surface level only.

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The influence of stacking fault energy (SFE) on the mechanism of dynamic recrystallization (DRX) during hot deformation of FCC metals is examined in the light of results from the power dissipation maps. The DRX domain for high SFE metals like Al and Ni occurred at homologous temperature below 0·7 and strain rates of 0·001 s−1 while for low SFE metals like Cu and Pb the corresponding values are higher than 0·8 and 100 s−1. The peak efficiencies of power dissipation are 50% and below 40% respectively. A simple model which considers the rate of interface formation (nucleation) involving dislocation generation and simultaneous recovery and the rate of interface migration (growth) occurring with the reduction in interface energy as the driving force, has been proposed to account for the effect of SFE on DRX. The calculations reveal that in high SFE metals, interface migration controls DRX while the interface formation is the controlling factor in low SFE metals. In the latter case, the occurrence of flow softening and oscillations could be accounted for by this model.

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A boundary layer analysis of mixed convective motion over a hot horizontal flat plate is performed under the conditions of steady flow and low speed. Use of the Howarth-Dorodnytsyn transformation makes it possible to dispense with the usual Boussinesq approximation, and variable gas properties are accounted for via the assumption that dynamic viscosity and thermal conductivity are proportional to the absolute temperature. The formulation presented enables the entire mixed convection regime to be described by a single set of equations. Finite difference solutions when the Prandtl number is 0.72 are obtained over the entire range of the mixed convection parameter ξ from 0 (free convection) to 1 (forced convection) and heating parameter ▵ values from 2 to 12. The effects of both ξ and ▵on the velocity profiles, the temperature profiles, and the variation of skin friction and heat transfer functions are clearly illustrated in tables and graphs.

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The nature of the chemisorbed states of nitrogen on various transition metal surfaces is discussed comprehensively on the basis of the results of electron spectroscopic investigations augmented by those from other techniques such as LEED and thermal desorption. A brief discussion of the photoemission spectra of free N2, a comparison of adsorbed N2 and CO as well as of physisorption of N2 on metal surfaces is also presented. We discuss the chemisorption of N2 on the surfaces of certain metals (e.g. Ni, Fe, Ru and W) in some detail, paying considerable attention to the effect of electropositive and electronegative surface modifiers. Features of the various chemisorbed states (one or more weakly chemisorbed gamma-states, strongly chemisorbed alpha-states with bond orders between 1 and 2. and dissociative chemisorbed beta-states) on different surfaces are described and relations between them indicated. While the gamma-state could be a precursor of the alpha-state, the alpha-state could be the precursor of the beta-state and this kind of information is of direct relevance to ammonia synthesis. The nature of adsorption of N2 on the surfaces of some metals (e.g. Cr, Co) deserves further study and such investigations might as well suggest alternative catalysts for ammonia synthesis.

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The hot deformation characteristics of alpha-zirconium in the temperature range of 650 °C to 850 °C and in the strain-rate range of 10-3 to 102 s-1 are studied with the help of a power dissipation map developed on the basis of the Dynamic Materials Model.[7,8,9] The processing map describes the variation of the efficiency of power dissipation (η =2m/m + 1) calculated on the basis of the strain-rate sensitivity parameter (m), which partitions power dissipation between thermal and microstructural means. The processing map reveals a domain of dynamic recrystallization in the range of 730 °C to 850 °C and 10−2 to 1−1 with its peak efficiency of 40 pct at 800 °C and 0.1 s-1 which may be considered as optimum hot-working parameters. The characteristics of dynamic recrystallization are similar to those of static recrystallization regarding the sigmoidal variation of grain size (or hardness) with temperature, although the dynamic recrystallization temperature is much higher. When deformed at 650 °C and 10-3 s-1 texture-induced dynamic recovery occurred, while at strain rates higher than 1 s-1, alpha-zirconium exhibits microstructural instabilities in the form of localized shear bands which are to be avoided in processing.

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Mössbauer and electrical resistivity measurements on Eu1–xSrxFeO3(0.0 < x[less-than-or-eq] 0.4) show the presence of a time-averaged electron configuration of Fe in these solids at T > TN. Variable range hopping arising from Anderson localization seems to occur at T < TN indicating that the electron hopping time in this regime is likely to be greater than 10–7 s. Mössbauer studies on Nd1–xSrxCoO3 show that in the Anderson localization regime, the hopping time is greater than 10–7 s in this system as well.

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Addition of boron in small quantities to various titanium alloys have shown significant improvement in mechanical behavior of materials. In the present study, electron back-scatter diffraction (EBSD) techniques have been applied to investigate the deformation microstructure evolution in boron modified two-phase titanium alloy Ti-6Al-4V. The alloy was hot compressed at 750 degrees C up to 50% height reduction at two different strain rates (10(-3) s(-1) and 1 s(-1)). The EBSD analyses indicated significant differences in deformed microstructure of the base alloy and the alloy containing boron. A strong subgrain formation tendency was observed along with inhomogeneous distribution of dislocations inside large a colonies of Ti64. In contrast, a colonies were relatively strain free for Ti64 + B, with more uniform dislocation density distribution. The observed difference is attributed to microstructural modifications viz, grain size refinement and presence of TiB particles at grain boundary produced due to boron addition. (C) 2010 Elsevier B.V. All rights reserved.

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A solution precursor plasma spray (SPPS) technique has been used for direct deposition of cerium oxide nanoparticles (CNPs) from various cerium salt solutions as precursors. Solution precursors were injected into the hot zone of a plasma plume to deposit CNP coatings. A numerical study of the droplet injection model has been employed for microstructure development during SPPS. The decomposition of each precursor to cerium oxide was analyzed by thermogravimetric-differential thermal analysis and validated by thermodynamic calculations. The presence of the cerium oxide phase in the coatings was confirmed by X-ray diffraction studies. Transmission electron microscopy studies confirmed nanocrystalline (grain size <14 nm) characteristic of the coatings. X-ray photoelectron spectroscopy studies indicated the presence of a high concentration of Ce3+ (up to 0.32) in the coating prepared by SPPS. The processing and microstructure evolution of cerium oxide coatings with high nonstoichiometry are reported.

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In this paper time-resolved resonance Raman (TR3) spectra of intermediates generated by proton induced electron-transfer reaction between triplet 2-methoxynaphthalene ((ROMe)-R-3) and decafluorobenzophenone (DFBP) are presented The TR3 vibrational spectra and structure of 2-methoxynaphthalene cation radical (ROMe+) have been analyzed by density functional theory (DFT) calculation It is observed that the structure of naphthalene ring of ROMe+ deviates from the structure of cation radical of naphthalene