Alternating current conduction behavior of excimer laser ablated SrBi2Nb2O9 thin films

Bi-layered Aurivillius compounds prove to be efficient candidates of nonvolatile memories. SrBi2Nb2O9 thin films were deposited by excimer laser ablation at low substrate temperature (400 °C) followed by an ex situ annealing at 750 °C. The polarization hysteresis behavior was confirmed by variation of polarization with the external applied electric field and also verified with capacitance versus voltage characteristics. The measured values of spontaneous and remnant polarizations were, respectively, 9 and 6 μC/cm2 with a coercive field of 90 kV/cm. The measured dielectric constant and dissipation factors at 100 kHz were 220 and 0.02, respectively. The frequency analysis of dielectric and ac conduction properties showed a distribution of relaxation times due to the presence of multiple grain boundaries in the films. The values of activation energies from the dissipation factor and grain interior resistance were found to be 0.9 and 1.3 eV, respectively. The deviation in these values was attributed to the energetic conditions of the grain boundaries and bulk grains. The macroscopic relaxation phenomenon is controlled by the higher resistive component in a film, such as grain boundaries at lower temperatures, which was highlighted in the present article in close relation to interior grain relaxation and conduction properties.

The fluorescence of Nd3+ in lead borate and bismuth borate glasses with large stimulated emission cross section

The stimulated emission cross section σp for the 1060 nm transition of Nd3+ in lead borate and bismuth borate glasses has been determined from fluorescence measurements. The compositional dependence of σp, which has been evaluated using radiative transition probability, refractive index of the host glass, effective fluorescence linewidth, and position of the band, with PbO/Bi2O3 content is investigated. The σp values of the 1060 nm band of Nd3+ for lead borate and bismuth borate glasses are found to be in the range 2.6–5.7×10−20 cm2 at 298 K and 3.0–6.3×10−20 cm2 at 4.2 K. The σp values are comparatively large suggesting the possible utilization of these materials in laser applications.

Large reduction of leakage current by graded-layer La doping in (Ba0.5, Sr0.5)TiO3 thin films

A large reduction in the leakage current behavior in (Ba, Sr)TiO3 (BST) thin films was observed by graded-layer donor doping. The graded doping was achieved by introducing La-doped BST layers in the grown BST films. The films showed a large decrease (about six orders of magnitude) in the leakage current in comparison to undoped films at an electric field of 100 kV/cm. The large decrease in leakage current was attributed to the formation of highly resistive layers, originating from compensating defect chemistry involved for La-doped films grown in oxidizing environment. Temperature-dependent leakage-current behavior was studied to investigate the conduction mechanism and explanations of the results were sought from Poole–Frenkel conduction mechanism.

Colossal electroresistance and current induced switching in ferromagnetic insulating state of La0.82Ca0.18MnO3

Colossal electroresistance and current induced resistivity switching have been measured in the ferromagnetic insulating (FMI) state of single crystal manganite La0.82Ca0.18MnO3. The sample has a Curie transition temperature TC = 165 K and the FMI state is realized for temperatures T<100 K. The electroresistance (ER), arising from a strong nonlinear resistivity, attains a large value ( ≈ 100%) in the FMI state. However, this is accompanied by a collapse of the magnetoresistance (MR) to a small value even in magnetic field (H) of 10 T. This demonstrates that the mechanisms that give rise to ER and MR are effectively decoupled.

Current‐limiting action of mixed‐phase BaTiO3 ceramic semiconductors

Stable and highly reproducible current‐limiting characteristics are observed for polycrystalline ceramics prepared by sintering mixtures of coarse‐grained, donor‐doped BaTiO3 (tetragonal) as the major phase and ultrafine, undoped cubic perovskite such as BaSnO3, BaZrO 3, SrTiO3, or BaTiO3 (cubic). The linear current‐voltage (I‐V) relation changes over to current limiting as the field strength increases, when thermal equilibrium is attained. The grain‐boundary layers with low donor and high Sn, Zr, or Sr have depleted charge carrier density as compared to that in the grain bulk. The voltage drop at the grain‐boundary layers diminishes the temperature gradient between the interior and surface regions.

Leakage current behavior in pulsed laser deposited Ba(Zr0.05Ti0.95)O3 thin films

Barium zirconium titanate [Ba(Zr0.05Ti0.95)O3, BZT] thin films were prepared by pulsed laser ablation technique and dc leakage current conduction behavior was extensively studied. The dc leakage behavior study is essential, as it leads to degradation of the data storage devices. The current-voltage (I-V) of the thin films showed an Ohmic behavior for the electric field strength lower than 7.5 MV/m. Nonlinearity in the current density-voltage (J-V) behavior has been observed at an electric field above 7.5 MV/m. Different conduction mechanisms have been thought to be responsible for the overall I-V characteristics of BZT thin films. The J-V behavior of BZT thin films was found to follow Lampert’s theory of space charge limited conduction similar to what is observed in an insulator with charge trapping moiety. The Ohmic and trap filled limited regions have been explicitly observed in the J-V curves, where the saturation prevailed after a voltage of 6.5 V referring the onset of a trap-free square region. Two different activation energy values of 1.155 and 0.325 eV corresponding to two different regions have been observed in the Arrhenius plot, which was attributed to two different types of trap levels present in the film, namely, deep and shallow traps.

Prebreakdown Current and Sparking Potential in a Nonuniform Electric Field with a Crossed Magnetic Field

Prebreakdown currents in a coaxial cylindrical geometry in nitrogen have been measured with and without a crossed magnetic field. The range of parameters used in the investigation are 2.6 ÿ p ÿ 14.5 torr, 50 ÿ (E/p) ÿ 420 V cm-1 torr-1, and 43.0 ÿ H/p ÿ 1185 Oe torr-1 (p is the pressure, E is the electric field, and H is the magnetic field). The initial photoelectric current is obtained by allowing photons produced in an auxiliary glow discharge to strike the cathode. Ions and electrons produced in the auxiliary discharge are prevented from reaching the main gap by suitable shielding. By modifying the Rice equation for back diffusion, the measured ionization current multiplication without a crossed magnetic field is compared with the multiplication predicted by the Townsend growth equation for nonuniform electric fields. It is observed that over the range of 50 Ã�¿ (E/P)max Ã�¿ 250 [(E/P)max is the value of E/p at the central electrode of the coaxial system] measured and calculated multiplication of current agree with each other. With a crossed magnetic field the prebreakdown currents have been measured and compared with the theoretically calculated currents using the equivalent pressure concept. Agreement between the calculated and measured currents is not satisfactory, and this has been attributed more to the uncertainty in the collision frequency data available than nonuniformity of the electric field. Sparking potentials have been measured with and without a crossed magnetic field.

Prebreakdown current measurements in vacuum gaps stressed by alternating voltages

A method has been suggested for the measurement of prebreakdown currents under a.c. conditions. Measurements were made using hemispherical stainless steel electrodes and currents from 10~3 A down to 10~7 A have been measured.

Determination of surge-diverter voltage/current characteristic

A mathematical model has been proposed to determine the voltage/current characteristic of the surge diverter for a wide range of currents of short duration of 8/20 and 4/10ÿs waveshapes. Experimental data agree well with the proposed model.

Determination of the follow current in surge diverters

Using a suitable mathematical model, computations of power/follow current in surge diverters (lightning arresters) have been made from the known short-circuit capacity of the power-frequency source and the nonlinear resistor characteristics. Also the effect of the initiation angle is studied. Typical verifications with the available data have been carried out. The influence of arc drop in the surge-diverter spark gap is neglected.

Active current and potential transducers

This paper advocates the use of active current and potential transducers for proper utilisation of fast protective relays. The active current transducer faithfully transforms the primary current containing a slowly decaying d.c. component, thereby providing a good transient response. The active potential transducer helps in fast extinction of ferroresonance oscillations. Results oflaboratory investigations are also presented.

l-pGlu-(2-propyl)-l-His-l-ProNH2 attenuates 4-aminopyridine-induced epileptiform activity and sodium current: a possible action of new thyrotropin-releasing hormone analog for its anticonvulsant potential

L-PGlu-(2-proPyl)-L-His-L-ProNH(2) (NP-647) is a CNS active thyrotropin-releasing hormone (TRH) analog with potential application in various CNS disorders including seizures. In the present study, mechanism of action for protective effect of NP-647 was explored by studying role of NP-647 on epileptiform activity and sodium channels by using patch-clamp methods. Epileptiform activity was induced in subicular pyramidal neurons of hippocampal slice of rat by perfusing 4-aminopyridine (4-AP) containing Mg(+2)-free normal artificial cerebrospinal fluid (nACSF). Increase in mean firing frequency was observed after perfusion of 4-AP and zero Mg(+2) (2.10+/-0.47 Hz) as compared with nACSF (0.12+/-0.08 Hz). A significant decrease in mean firing frequency (0.61+/-0.22 Hz), mean frequency of epileptiform events (0.03+/-0.02 Hz vs. 0.22+/-0.05 Hz of 4-AP+0 Mg), and average number of action potentials in paroxysmal depolarization shift-burst (2.54+/-1.21 Hz vs. 8.16+/-0.88 Hz of 4-AP +0 Mg) was observed. A significant reduction in peak dV/dt (246+/-19 mV ms(-1) vs. 297 18 mV ms-1 of 4-AP+0 Mg) and increase (1.332+/-0.018 ms vs. 1.292+/-0.019 ms of 4-AP+0 Mg) in time required to reach maximum depolarization were observed indicating role of sodium channels. Concentration-dependent depression of sodium current was observed after exposure to dorsal root ganglion neurons to NP-647. NP-647 at different concentrations (1, 3, and 10 mu M) depressed sodium current (15+/-0.5%, 50+/-2.6%, and 75+/-0.7%, respectively). However, NP-647 did not show change in the peak sodium current in CNa18 cells. Results of present study demonstrated potential of NP-647 in the inhibition of epileptiform activity by inhibiting sodium channels indirectly. (C) 2011 IBRO. Published by Elsevier Ltd. All rights reserved.

Dislocation mechanisms for plastic flow of nickel in the temperature range 4.2 – 1200 K

The temperature ranges of thermal and athermal deformation behaviour of nickel are identified by employing the temperature-dependence of flow-stress and strain-rate cycling data. The results are used to present a unified view of dislocation mechanisms of glide encompassing the two thermally activated and the intermediate athermal regimes of plastic flow.In the low-temperature thermally activated region (<250 K) the strain rate is found to be controlled by the repulsive intersection of glide and forest dislocations, in accordance with current ideas. The athermal stress in this region can be attributed mainly to the presence of strong attractive junctions which are overcome by means of Orowan bowing, a small contribution also coming from the elastic interactions between dislocations. The values of activation area and activation energy obtained in the high-temperature region (> 750 K) negate the operation of a diffusion-controlled mechanism. Instead, the data support a thermal activation model involving unzipping of the attractive junctions. The internal (long-range) stress contribution here results solely from the elastic interactions between dislocations. This view concerning the high-temperature plastic flow is further supported by the observation that the Cottrell–Stokes law is obeyed over large strains in the range 750–1200 K.

Evidence for a thermally reversing window in bulk Ge–Te–Si glasses revealed by alternating differential scanning calorimetry

Experiments on Ge15Te85− x Si x glasses (2 ≤ x ≤ 12) using alternating differential scanning calorimetry (ADSC) indicate that these glasses exhibit one glass transition and two crystallization reactions upon heating. The glass transition temperature has been found to increase almost linearly with silicon content, in the entire composition tie-line. The first crystallization temperature (T c1) exhibits an increase with silicon content for x < 5; T c1 remains almost a constant in the composition range 5 < x ≤ 10 and it increases comparatively more sharply with silicon content thereafter. The specific heat change (ΔC p) is found to decrease with an increase in silicon content, exhibiting a minimum at x = 5 (average coordination number, r = 2.4); a continuous increase is seen in ΔC p with silicon concentration above x = 5. The effects seen in the variation with composition of T c1 and ΔC p at x = 5, are the specific signatures of the mean-field stiffness threshold at r = 2.4. Furthermore, a broad trough is seen in the enthalpy change (ΔH NR), which is indicative of a thermally reversing window in Ge15Te85− x Si x glasses in the composition range 2 ≤ x ≤ 6 (2.34 ≤ r ≤ 2.42).