Relation between integral and partial properties of ternary solutions along different composition trajectories

The relations between partial and integral properties of ternary solutions along composition trajectories suggested by Kohler, Colinet and Jacob, and along an arbitrary path are derived. The chemical potentials of the components are related to the slope of integral free energy by expressions involving the binary compositions generated by the intersections of the composition trajectory with the sides of the ternary triangle. Only along the Kohler composition trajectory it is possible to derive the integral free energy from the variation of the chemical potential of a single component with composition or vice versa. Along all other paths the differential of the integral free energy is related to two chemical potentials. The Gibbs-Duhem integration proposed by Darken for the ternary system uses the Kohler isogram. The relative merits of different limits for integration are discussed.

Studies on structural and electrical properties of barium strontium titanate thin films developed by metallo-organic decomposition

Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members were deposited using the metallo-organic decomposition (MOD) technique. Processing parameters such as nonstoichiometry, annealing temperature and time, film thickness and doping concentration were correlated with the structural and electrical properties of the films. A random polycrystalline structure was observed for all MOD films under the processing conditions in this study. The microstructures of the films showed multi-grains structure through the film thickness. A dielectric constant of 563 was observed for (Ba0.7Sr0.3)TiO3 films rapid thermal annealed at 750 degrees C for 60 s. The dielectric constant increased with annealing temperature and film thickness, while the dielectric constant could reach the bulk values for thicknesses as thin as similar to 0.3 mu m. Nonstoichiometry and doping in the films resulted in a lowering of the dielectric constant. For near-stoichiometric films, a small dielectric dispersion obeying the Curie-von Schweidler type dielectric response was observed. This behavior may be attributed to the presence of the high density of disordered grain boundaries. All MOD processed films showed trap-distributed space-charge limited conduction (SCLC) behavior with slope of similar to 7.5-10 regardless of the chemistry and processing parameter due to the presence of main boundaries through the film thickness. The grain boundaries masked the effect of donor-doping, so that all films showed distributed-trap SCLC behavior without discrete-traps. Donor-doping could significantly improve the time-dependent dielectric breakdown behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping. From the results of charge storage density, leakage current and time-dependent dielectric breakdown behavior, BST thin films are found to be promising candidates for 64 and 256Mb ULSI DRAM applications. (C) 1997 Elsevier Science S.A.

The log delta log t method for the determination of the coefficient of consolidation

The behaviour of saturated soils undergoing consolidation is very complex, It may not follow Terzaghi's theory over the entire consolidation process, Different soils may behave in such a way as to fit into Terzaghi's theory over some specific stages of the consolidation process (percentage of consolidation), This may be one of the reasons for the difficulties faced by the existing curve-fitting procedures in obtaining the coefficient of consolidation, c(v). It has been shown that the slope of the initial linear portion of the theoretical log U-log T curve is constant over a wider range of degree of consolidation, U, when compared with the other methods in use, This initial well-defined straight line in the log U-log T plot intersects the U = 100% line at T = pi/4, which corresponds to U = 88.3%, The proposed log delta-log t method is based on this observation, which gives the value of c(v) through simple graphical construction, In the proposed method, which is more versatile, identification of the characteristic straight lines is very clear; the intersection of these lines is more precise and the method does not depend upon the initial compression for the determination of c(v).

Secondary compression factor

When the variation of secondary compression, with log(10) t is non-linear, the quantification of secondary settlement through the coefficient of secondary compression, C-alpha epsilon, becomes difficult which frequently leads to an underestimate of the settlement, Log(10) delta - log(10) t representation of such true-compression data has the distinct advantage of exhibiting linear secondary compression behaviour over an appreciably larger time span. The slope of the secondary compression portion of the log(10) e - log(10) t curve expressed as Delta(log e)/(log t) and called the 'secondary compression factor', m, proves to be a better alternative to C-alpha epsilon and the prediction of secondary settlement is improved.

Catalytic oxidative polymerization of 1,1-diphenylethylene at ambient temperature and potential application of peroxide macroinitiator

The Co(II)TPP(Py) complex was used as an efficient dioxygen carrier for the radical polymerization of 1,1-diphenylethylene (DPE), which has a low ceiling temperature, at ambient temperature and low oxygen pressure. The mechanism of polymerization is discussed' on the basis of kinetic data, W-vis, ESR, and H-1 NMR studies. The rate of polymerization (RP) and number-average molecular weights (M) of poly(1,1-diphenylethylene peroxide) (PDPEP) are higher and the polydispersity is lower than in 2,2'-azobis(isobutyronitrile) (AIBN) initiated polymerization. PDPEP was further. used as a macroinitiator for the polymerization of MMA. The polymerization obeys classical kinetics. The K-2 value of the PDPEP has been determined from the slope of R-P(2) VS [M](2)[I], which reveals that it can also be used at higher temperature for the polymerization. An "active" PMMA was also synthesized, containing initiating segments in the polymer backbone.

Crystal structure and thermal and electrical properties of the perovskite solid solution Nd1-xSrxFeO3-delta (0 <= x <= 0.4)

The crystal structure, thermal expansion and electrical conductivity of strontium-doped neodymium ferrite (Nd1-xSrxFeO3-delta where 0less than or equal toxless than or equal to0.4) were investigated. All compositions had the GdFeO3-type orthorhombic perovskite structure. The lattice parameters were determined at room temperature by X-ray powder diffraction. The orthorhombic distortion decreases with increasing Sr substitution. The pseudocubic lattice parameter shows a minimum at x=0.3. The thermal expansion curves for x=0.2-0.4 displayed rapid increase in slope at higher temperatures. The electrical conductivity increased with Sr content and temperature. The calculated activation energies for electrical conduction decreased with increasing x. The electrical conductivity can be described by the small polaron hopping mechanism. The charge compensation for divalent ion on the A-site is provided by the formation of Fe4+ ions on the B site and vacancies on the oxygen sublattice. The results indicate two defect domains: for low values of x, the predominant defect is Fe4+ ions, whereas for higher values of x, oxygen vacancies dominate. (C) 2002 Elsevier Science B.V. All rights reserved.

Crystal structure, thermal expansion and electrical conductivity of Nd0.7Sr0.3Fe1-xCoxO3 (0 <= x <= 0.8)

The crystal structure, thermal expansion and electrical conductivity of the solid solution Nd0.7Sr0.3Fe1-xCoxO3 for 0 less than or equal to x less than or equal to 0.8 were investigated. All compositions had the GdFeO3-type orthorhombic perovskite structure. The lattice parameters were determined at room temperature by X-ray powder diffraction (XRPD). The pseudo-cubic lattice constant decreased continuously with x. The average linear thermal expansion coefficient (TEC) in the temperature range from 573 to 973 K was found to increase with x. The thermal expansion curves for all values of x displayed rapid increase in slope at high temperatures. The electrical conductivity increased with x for the entire temperature range of measurement. The calculated activation energy values indicate that electrical conduction takes place primarily by the small polaron hopping mechanism. The charge compensation for the divalent ion on the A-site is provided by the formation of Fe4+ ions on the B-site (in preference to Co4+ ions) and vacancies on the oxygen sublattice for low values of x. The large increase in the conductivity with x in the range from 0.6 to 0.8 is attributed to the substitution of Fe4+ ions by Co4+ ions. The Fe site has a lower small polaron site energy than Co and hence behaves like a carrier trap, thereby drastically reducing the conductivity. The non-linear behaviour in the dependence of log sigmaT with reciprocal temperature can be attributed to the generation of additional charge carriers with increasing temperature by the charge disproportionation of Co3+ ions. (C) 2002 Elsevier Science B.V. All rights reserved.

Effect of two-level systems on the spectral density of universal conductance fluctuations in doped Si

We have studied the power spectral density [S(f) = gamma/f(alpha)] of universal conductance fluctuations (UCF's) in heavily doped single crystals of Si, when the scatterers themselves act as the primary source of dephasing. We observed that the scatterers, with internal dynamics like two-level-systems, produce a significant, temperature-dependent reduction in the spectral slope alpha when T less than or similar to 10 K, as compared to the bare 1/f (alphaapproximate to1) spectrum at higher temperatures. It is further shown that an upper cutoff frequency (f(m)) in the UCF spectrum is necessary in order to restrict the magnitude of conductance fluctuations, [(deltaG(phi))(2)], per phase coherent region (L-phi(3)) to [(deltaGphi)(2)](1/2) less than or similar to e(2)/h. We find that f(m) approximate to tau(D)(-1), where tau(D) = L-2/D, is the time scale of the diffusive motion of the electron along the active length (L) of the sample (D is the electron diffusivity).

Kinetics of hydrogen evolution on submicron size Co, Ni, Pd and CoNi alloy powder electrodes by d.c. polarization and a.c. impedance studies

Submicron size Co, Ni and Co-Ni alloy powders have been synthesized by the polyol method using the corresponding metal malonates and Pd powder by reduction of PdOx in methanol. The kinetics of the hydrogen evolution reaction ( HER) in 6 M KOH electrolyte have been studied on electrodes made from the pressed powders. The d.c. polarization measurements have resulted in a value close to 120 mV decade(-1) for the Tafel slope, suggesting that the HER follows the Volmer-Heyrovsky mechanism. The values of exchange current density (i(o)) are in the range 1-10 mA cm(-2) for electrodes fabricated in the study. The a.c. impedance spectra measured at several potentials in the HER region showed a single semicircle in the Nyquist plots. Exchange current density (i(o)) and energy transfer coefficient (alpha) have been calculated by employing a nonlinear least square-fitting program.

Seismic passive resistance in soils for negative wall friction

: In the presence of pseudo-static seismic forces, passive earth pressure coefficients behind retaining walls were generated using the limit equilibrium method of analysis for the negative wall friction angle case (i.e., the wall moves upwards relative to the backfill) with logarithmic spirals as rupture surfaces. Individual density, surcharge, and cohesion components were computed to obtain the total minimum seismic passive resistance in soils by adding together the individual minimum components. The effect of variation in wall batter angle, ground slope, wall friction angle, soil friction angle, and horizontal and vertical seismic accelerations on seismic passive earth pressures are considered in the analysis. The seismic passive earth pressure coefficients are found to be highly sensitive to the seismic acceleration coefficients both in the horizontal and the vertical directions. The results are presented in graphical and tabular formats.

Swelling pressure of sodium montmorillonites

Determination of the swelling pressure of montmorillonitic clays is required in many situations concerned with stability problems of foundations, retaining walls, slope stability of embankments and excavations in expansive soils. Recently expansive soils such as bentonite have been used as a mixture backfill material, for example as backfill material for nuclear waste disposal systems, for which a knowledge of the swelling pressure is desirable. This is the pressure required to keep the clay-water system at the required void ratio when it is allowed to absorb water or electrolyte. If the pressure is less than the swelling pressure, volume expansion occurs; if the pressure is more than the swelling pressure, volume compression occurs. Because of isomorphous substitutions in the crystal lattice, in general the clay particles carry negative charges at the surfaces of the platelets. Exchangeable cations in the clay media are attracted to these negative charges, but this attraction is opposed by the tendency of ions to be distributed. As a result, an electric diffuse double layer is formed (Gouy, 1910).

Minimum error solutions of the Boltzmann equation for shock structure

‘Best’ solutions for the shock-structure problem are obtained by solving the Boltzmann equation for a rigid sphere gas by applying minimum error criteria on the Mott-Smith ansatz. The use of two such criteria minimizing respectively the local and total errors, as well as independent computations of the remaining error, establish the high accuracy of the solutions, although it is shown that the Mott-Smith distribution is not an exact solution of the Boltzmann equation even at infinite Mach number. The minimum local error method is found to be particularly simple and efficient. Adopting the present solutions as the standard of comparison, it is found that the widely used v2x-moment solutions can be as much as a third in error, but that results based on Rosen's method provide good approximations. Finally, it is shown that if the Maxwell mean free path on the hot side of the shock is chosen as the scaling length, the value of the density-slope shock thickness is relatively insensitive to the intermolecular potential. A comparison is made on this basis of present results with experiment, and very satisfactory quantitative agreement is obtained.

Certain Novel Aspects of Thallium and Bismuth Cuprate Superconductors

Novel superconducting thallium cuprates of the type T1Ca1‐X LnX Sr2 Cu2O6+δ (Ln = Y or rare earth), T1Srn+1‐x Lnx Cun OY and Tl1‐x PbX Srn+1Cun08+δ are described. These cuprates as well as Bi2Ca1‐x Lnx Sr2Cu2O8+δ and TICa1‐xYxBa2 Cu2 O6+δ . show maximum T around a specific composition or oxygen content. They also show interesting changes in the sign and magnitude of the thermopower with the composition. Specially noteworthy is the negative slope of the thermopower‐temperature plots. The thermopower behaviour in these two‐band systems can be understood in terms of entropie and quasiparticle contributions. It appears that Tl1‐x Pbx CaSr2Cu2O6+δ is a genuine high T electron superconductor.

Electron Cyclotron Resonance in Strained Si and Si0.94Ge0.06 Channels on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition

We report the far-infrared measurements of the electron cyclotron resonance absorption in n-type Si/Si0. 62Ge0.38 and Si0.94Ge0.06 /Si0. 62Ge0.38 modulation- doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si0.94Ge0.06 channels were grown on relaxed Si0.62Ge0.38 buffer layers, which consist of 0.6 μm uniform Si0.62Ge0.38 layers and 0.5 μm compositionally graded relaxed SiGe layers from 0% Ge to 38 % Ge. The buffer layers were annealed at 800 °C for 1 hr to obtain complete relaxation. The samples had 100 Å spacers and 300 Å 2×1019 cm-3 n-type supply layers on the tops of the 75 Å channels. The far-infrared measurements of electron cyclotron resonance were performed at 4K with the magnetic field of 4 – 8 Tesla. The effective masses determined from the slope of center frequency of absorption peak vs applied magnetic field plot are 0.20 mo and 0.19 mo for the two dimensional electron gases in the Si and Si0.94Ge0.06 channels, respectively. The Si effective mass is very close to that of two dimensional electron gas in Si MOSFET (0.198mo). The electron effective mass of Si0.94Ge0.06 is reported for the first time and about 5 % lower than that of pure Si.

Domain-wall creep driven by spin torque in nanoscale ferromagnetic cylinders

We have explored the mechanism of spin-torque-driven domain-wall (DW) depinning in cylindrical nanowires of nickel using noise in electrical resistance. We find that the spectral slope of noise is a sensitive probe to the DW kinetics that reveals a creeplike behavior of the DWs at the depinning threshold, and diffusive DW motion at higher spin-torque drive. Different regimes of DW kinetics were characterized by universal kinetic exponents.