Template assisted fabrication of I-D nanostructures of Nickel,Cobalt, Iron Oxide and Carbon nanotubes and a study on their structural, magnetic and nonlinear optical properties for applications

Department of Physics, Cochin University of Science & Technology

NANO - ZINC OXIDE: A Novel Modifier for Thermoplastics

Various synthesis routes have been developed in recent years for the preparation of nanoparticles. One of those methods is polymer induced crystallization. The first objective of the present work was to prepare nano ZnO powder by polymer induced crystallization in chitosan solution and to characterize the material using different techniques like TEM, SEM, XRD, FTLR, UV spectroscopy, TGA, DSC etc.The second object of the study is to prepare composites using nano ZnO. It has been undertaken to explore the potential of nano ZnO as reinforcement in engineering as well as commodity thermoplastics to widen their application spectra. We selected three engineering thermoplastics like [poly ethylene terephthalate, polyamide 6, and polycarbonate] and three commodity plastics like [polypropylene, high density polyethylene, and polystyrene] for the study. To date one of the few disadvantages associated with nanoparticle incorporation has concerned toughness and impact performance. Modification of polymers could reduce impact performance. The present study also focused on whether nano ZnO can act as a modifier for thennoplastics, without sacrificing their impact strength.

Dielectric and optical properties of europium oxide films

The dielectric properties of vacuum-deposited europium oxide films have been investigated in the frequency range from 1 kHz to 1 MHz at various temperatures (300-543 K). The dielectric constant is found to depend on film thickness and it attains a constant value beyond 1000 Å. Films deposited at higher substrate temperatures (above 423 K) exhibit improved dielectric properties owing to the recovery of stoichiometry. The frequency variation of the loss factor exhibits a minimum which increases with rise in temperature. The breakdown field strength (about 106V cm-1) is found to be thickness dependent and it varies in accordance with the Forlani-Minnaja relation. The films exhibit ohmic conduction with an activation energy of 0.86 eV at low electric fields but at higher fields the conductivity becomes space charge limited. X-ray studies show that the films are amorphous in nature. The a.c. conductivity is proportional to ω at low frequency, whereas a square law dependence is observed at higher frequencies. The optical constants n, α and k and optical band gap are calculated from the UV-visible-near-IR spectra.

On the Synthesis and Characterisation of Magnetic Metal and Metal oxide Nanostructures

Department of Physics, Cochin University of Science and Technology

Synthesis, Growth and Characterization of Oxide Phosphors for Thin Film Electroluminescent Devices

Department of Physics, Cochin University of Science and Technology

Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Investigations on some technologically important polymer nanocomposite films and semi crystalline Polypyrrole films

The present work deals with investigations on some technologically important polymer nanocomposite films and semi crystalline polypyrrole films.The work presented in the thesis deals with the realization of novel polymer nanocomposites with enhanced functionalities and prospects of applications in the fields related to nanophotonics. The development of inorganic/polymer nanocomposites is a rapidly expanding multidisciplinary research area with profound industrial applications. The incorporation of suitable inorganic nanoparticles can endow the resulting nanocomposites with excellent electrical, optical and mechanical properties. The first chapter gives a general introduction to nanotechnology, nanocomposites and conducting polymers. It also emphasizes the significance of ZnO among other semiconductor materials, which forms the inorganic filler in the polymer nanocomposites of the present study. This chapter also gives general ideas on the properties and applications of conducting polymers with special reference to polypyrrole. The objectives of the present investigations are also clearly addressed in this chapter. The second chapter deals with the theoretical aspects and details of all the experimental techniques used in the present work for the synthesis of polymer nanocomposites and polypyrrole samples and their various characterizations. Chapter 3 is based on the preparation and properties of ZnO/Polystyrene nanocomposite film samples. The optical properties of these nanocomoposite films are discussed in detail.Chapter 4 deals with the detailed investigations on the dependence of the optical properties of ZnO/PS nanocomposite films on the size of the nanostructured ZnO filler material. The excellent UV shielding properties of these nanocomposite films form the highlight of this chapter. Chapter 5 gives a detailed analysis of the nonlinear optical properties of ZnO/PS nanocomposite films using Z scan technique. The effect of ZnO particle size in the composite films on the nonlinear properties is discussed. The present study involves two phases of research activities. In the first phase, the linear and nonlinear optical properties of ZnO/polymer nanocomposites are investigated in detail. The second phase of work is centered on the synthesis and related studies on highly crystalline polypyrrole films. In the present study, nanosized ZnO is synthesized using wet chemical method at two different temperatures

A study of the preparation and characterization of bismuth telluride and bismuth oxide thin films

This thesis deals with the preparation and properties of two compounds of V-II family, viz. bismuth telluride and bismuth oxide, in thin filmform. In the first chapter is given the resume of basic solid state physics relevant to the work reported here. In the second chapter the different methods of thin film preparationtia described. Third chapter deals with the experimental techniques used for preparation and characterization of the films. Fourth chapter deals with the preparation and propertiesof bismuth telluride films. In next four chapters, the preparation and properties of bismuth oxide films are discussed in detail. In the last chapter the use of Bi205 films in the fabrication of Heat mirrors is examined and discussed.

Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases

One of the main challenges in the development of metal-oxide gas sensors is enhancement of selectivity to a particular gas. Currently, two general approaches exist for enhancing the selective properties of sensors. The first one is aimed at preparing a material that is specifically sensitive to one compound and has low or zero cross-sensitivity to other compounds that may be present in the working atmosphere. To do this, the optimal temperature, doping elements, and their concentrations are investigated. Nonetheless, it is usually very difficult to achieve an absolutely selective metal oxide gas sensor in practice. Another approach is based on the preparation of materials for discrimination between several analyte in a mixture. It is impossible to do this by using one sensor signal. Therefore, it is usually done either by modulation of sensor temperature or by using sensor arrays. The present work focus on the characterization of n-type semiconducting metal oxides like Tungsten oxide (WO3), Zinc Oxide (ZnO) and Indium oxide (In2O3) for the gas sensing purpose. For the purpose of gas sensing thick as well as thin films were fabricated. Two different gases, NO2 and H2S gases were selected in order to study the gas sensing behaviour of these metal oxides. To study the problem associated with selectivity the metal oxides were doped with metals and the gas sensing characteristics were investigated. The present thesis is entitled “Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases” and consists of six chapters.

Investigation of dielectric and elastic properties of selected dielectric ceramics and oxide glasses

The dielectric and elastic properties are of considerable significance to the science and technology of matter in the solid state. The study of these properties give information about the magnitude of the forces and nature of the bonding between the atoms. Our aim has been to investigate systematically the effect of doping of an appropriate element on the elastic and dielectric properties of selected dielectric ceramics and oxide glasses. These materials have got wide technological applications due to their interesting electrical, optical, thermal and elastic behaviour. Ultrasound propagation and capacitance measurement techniques have been employed for the systematic investigation of the elastic and dielectric properties of selected number of these materials. Details of the work done and results obtained are presented in this thesis.

Structural, electrical and electrochemical characterization of high frequency magnetron sputtered spinel oxide cathode films for lithium ion battery applications

The main challenges in the deposition of cathode materials in thin film form are the reproduction of stoichiometry close to the bulk material and attaining higher rates of deposition and excellent crystallinity at comparatively lower annealing temperatures. There are several methods available to develop stoichiometric thin film cathode materials including pulsed laser deposition; plasma enhanced chemical vapor deposition, electron beam evaporation, electrostatic spray deposition and RF magnetron sputtering. Among them the most versatile method is the sputtering technique, owing to its suitability for micro-fabricating the thin film batteries directly on chips in any shape or size, and on flexible substrates, with good capacity and cycle life. The main drawback of the conventional sputtering technique using RF frequency of 13.56MHz is its lower rate of deposition, compared to other deposition techniques A typical cathode layer for a thin film battery requires a thickness around one micron. To deposit such thick layers using convention RF sputtering, longer time of deposition is required, since the deposition rate is very low, which is typically 10-20 Å/min. This makes the conventional RF sputtering technique a less viable option for mass production in an economical way. There exists a host of theoretical and experimental evidences and results that higher excitation frequency can be efficiently used to deposit good quality films at higher deposition rates with glow discharge plasma. The effect of frequencies higher than the conventional one (13.56MHz) on the RF magnetron sputtering process has not been subjected to detailed investigations. Attempts have been made in the present work, to sputter deposit spinel oxide cathode films, using high frequency RF excitation source. Most importantly, the major challenge faced by the thin film battery based on the LiMn2O4 cathode material is the poor capacity retention during charge discharge cycling. The major causes for the capacity fading reported in LiMn2O4cathode materials are due to, Jahn-Teller distortion, Mn2+ dissolution into the electrolyte and oxygen loss in cathode material during cycling. The work discussed in this thesis is an attempt on overcoming the above said challenges and developing a high capacity thin film cathode material.

Synthesis and characterization of Tellurium oxide glasses for photonic applications

Tellurite glasses are photonic materials of special interest to the branch of optoelectronic and communication, due to its important optical properties such as high refractive index, broad IR transmittance, low phonon energy etc. Tellurite glasses are solutions to the search of potential candidates for nonlinear optical devices. Low phonon energy makes it an efficient host for dopant ions like rare earths, allowing a better environment for radiative transitions. The dopant ions maintain majority of their individual properties in the glass matrix. Tellurites are less toxic than chalcogenides, more chemically and thermally stable which makes them a highly suitable fiber material for nonlinear applications in the midinfrared and they are of increased research interest in applications like laser, amplifier, sensor etc. Low melting point and glass transition temperature helps tellurite glass preparation easier than other glass families. In order to probe into the versatility of tellurite glasses in optoelectronic industry; we have synthesized and undertaken various optical studies on tellurite glasses. We have proved that the highly nonlinear tellurite glasses are suitable candidates in optical limiting, with comparatively lower optical limiting threshold. Tuning the optical properties of glasses is an important factor in the optoelectronic research. We have found that thermal poling is an efficient mechanism in tuning the optical properties of these materials. Another important nonlinear phenomenon found in zinc tellurite glasses is their ability to switch from reverse saturable absorption to saturable absorption in the presence of lanthanide ions. The proposed thesis to be submitted will have seven chapters