Method for measuring the lateral aberrations of a lithographic projection system with mirror-symmetric FOCAL marks

A novel method for measuring the imaging quality of a projection system with mirror-symmetric FOCAL marks is proposed, and the principle of the method is described. Through experiments, it is demonstrated that not only the axial aberrations but also the lateral aberrations can be measured with high accuracy by the method. The advantages of the method include obtaining more aberrations than the FOCAL technique and making it much simpler to perform a full-scale measurement of the imaging quality of a lithographic projection system. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

Paths Towards High Efficiency Silicon Photovoltaics

While photovoltaics hold much promise as a sustainable electricity source, continued cost reduction is necessary to continue the current growth in deployment. A promising path to continuing to reduce total system cost is by increasing device efficiency. This thesis explores several silicon-based photovoltaic technologies with the potential to reach high power conversion efficiencies. Silicon microwire arrays, formed by joining millions of micron diameter wires together, were developed as a low cost, low efficiency solar technology. The feasibility of transitioning this to a high efficiency technology was explored. In order to achieve high efficiency, high quality silicon material must be used. Lifetimes and diffusion lengths in these wires were measured and the action of various surface passivation treatments studied. While long lifetimes were not achieved, strong inversion at the silicon / hydrofluoric acid interface was measured, which is important for understanding a common measurement used in solar materials characterization.

Cryogenic deep reactive ion etching was then explored as a method for fabricating high quality wires and improved lifetimes were measured. As another way to reach high efficiency, growth of silicon-germanium alloy wires was explored as a substrate for a III-V on Si tandem device. Patterned arrays of wires with up to 12% germanium incorporation were grown. This alloy is more closely lattice matched to GaP than silicon and allows for improvements in III-V integration on silicon.

Heterojunctions of silicon are another promising path towards achieving high efficiency devices. The GaP/Si heterointerface and properties of GaP grown on silicon were studied. Additionally, a substrate removal process was developed which allows the formation of high quality free standing GaP films and has wide applications in the field of optics.

Finally, the effect of defects at the interface of the amorphous silicon heterojuction cell was studied. Excellent voltages, and thus efficiencies, are achievable with this system, but the voltage is very sensitive to growth conditions. We directly measured lateral transport lengths at the heterointerface on the order of tens to hundreds of microns, which allows carriers to travel towards any defects that are present and recombine. This measurement adds to the understanding of these types of high efficiency devices and may aid in future device design.

Papel de la N-nervonil esfingomielina en la organización lateral y la estabilidad nanomecánica de bicapas lipídicas

Los lípidos de las membranas biológicas no son perfectamente miscibles entre sí, con frecuencia dan origen a “dominios” bidimensionales separados lateralmente cuando se resuspenden en agua. Las mezclas esfingomielina/dioleilfosfatidilcolina/colesterol dan origen con frecuencia a dominios, pero esto no ocurre cuando la esfingomielina es insaturada (p. ej. N-nervonil esfingomielina). En este trabajo se han aplicado técnicas calorimétricas y estructurales para estudiar el comportamiento de mezclas N-nervonil esfingomielina/dioleilfosfatidilcolina/colesterol/ceramida. En presencia de ceramida y de N-nervonil esfingomielina se observa formación de dominios laterales, al contrario de lo que ocurría en ausencia de ceramida.

Avaliação numérica de estabilidade lateral de vigas casteladas

Restrições de espaço e altura são frequentemente impostas às edificações residenciais, comerciais, industriais, depósitos e galpões com um ou diversos pavimentos em função de aspectos de regulamentos regionais, técnicos, econômicos ou ainda de natureza estética. A fim de proporcionar a passagem de tubulações e dutos de grande diâmetro sob vigas de aço, grandes alturas são normalmente requeridas, demandando por vezes, magnitudes de altura inviáveis entre pavimentos de edificações. Diversas soluções estruturais podem ser utilizadas para equacionar tais obstáculos, onde dentre outras, pode-se citar as vigas com inércia variável, stub-girders, treliças mistas, vigas misuladas e vigas com uma ou múltiplas aberturas na alma com geometrias variadas. No que tange às vigas casteladas, solução estrutural pautada neste estudo, a estabilidade é sempre um motivo de preocupação tipicamente durante a construção quando os contraventamentos laterais ainda não estão instalados. De qualquer forma, o comprimento destravado em geral alcançado pelos vãos destas vigas, são longos o suficiente para que a instabilidade ocorra. Todavia, o acréscimo substancial da resistência à flexão de tais membros devido ao aumento da altura oriundo de seu processo fabril em relação ao perfil matriz, aliada a economia de material e utilidade fim de serviço, garante a atratividade no aproveitamento destas, para grandes vãos junto aos projetistas. Não obstante, este aumento proporcional no comprimento dos vãos faz com que a instabilidade lateral ganhe importância especial. Neste contexto, o presente trabalho tem por objetivo desenvolver um modelo numérico que permita a realização de uma avaliação paramétrica a partir da calibração do modelo com resultados experimentais, efetuar a análise do comportamento de vigas casteladas e verificar seus mecanismos de falha, considerando comportamento elasto-plástico, além das não-linearidades geométricas. Também é objetivo deste trabalho, avaliar, quantificar e determinar a influência das diferenças geométricas características das vigas casteladas em relação às vigas maciças com as mesmas dimensões, analisando e descrevendo o comportamento estrutural destas vigas de aço para diversos comprimentos de vãos. A metodologia empregada para tal estudo baseou-se em uma análise paramétrica com o auxílio do método numérico dos elementos finitos.

Metallic thin fi lms on stepped surfaces: lateral scattering of quantum well states

Quantum well states of Ag films grown on stepped Au(111) surfaces are shown to undergo lateral scattering, in analogy with surface states of vicinal Ag(111). Applying angle resolved photoemission spectroscopy we observe quantum well bands with zone-folding and gap openings driven by surface/interface step lattice scattering. Experiments performed on a curved Au(111) substrate allow us to determine a subtle terrace-size effect, i.e., a fine step-density-dependent upward shift of quantum well bands. This energy shift is explained as mainly due to the periodically stepped crystal potential offset at the interface side of the film. Finally, the surface state of the stepped Ag film is analyzed with both photoemission and scanning tunneling microscopy. We observe that the stepped film interface also affects the surface state energy, which exhibits a larger terrace-size effect compared to surface states of bulk vicinal Ag(111) crystals