DIRECT ELECTRON-TRANSFER REACTION OF HEMEPROTEINS PROMOTED BY METHYLENE-BLUE MODIFIED ELECTRODE

The heterogeneous electron transfer reaction of hemeproteins including hemoglobin, myoglobin and cytochrome C at Pt mesh electrode adsorbed methylene blue has been investigated. Thin-layer spectroelectrochemical technique was used for observing the electron transfer processes of three kinds of proteins, and the corresponding electrode rate constants were measured.

FLOW-INJECTION ANALYSIS OF MYOGLOBIN AND HEMOGLOBIN AT TOLUIDINE BLUE CHEMICALLY MODIFIED ELECTRODE

Electrodeposition of the phenothiazine mediator titrant toluidine blue onto a glassy carbon substrate at an appropriate potential was used to construct a toluidine blue chemically modified electrode (CME) exhibiting electrocatalytic reduction for myoglobin and hemoglobin. The CME catalyzed the hemoprotein electroreduction at the reduction potential of the mediator molecule. When the CME as used as a detector for flow injection analysis at a constant applied potential of -0.30 V vs. a saturated calomel electrode, it gave detection limits of 20 and 50 ng (1.2 and 0.78 pmol) injected myoglobin and hemoglobin, respectively, with a dynamic linear concentration range over 2 orders of magnitude. After a brief equilibration period, the CME retained nearly 90% of its initial myoglobin response over 8 hours of continuous exposure to the flow-through system.

海洋聚磷菌Halomonas YSR-3的除磷特性研究

本论文报道从海洋中分离到的一株聚磷菌的分离、鉴定、在系统发育中的地位、除磷特性、菌体内多磷酸盐颗粒的研究、D-海因酶和核苷二磷酸激酶基因的克隆及序列分析，为海水系统的生物除磷提供部分基础资料。 从黄海海域分离到聚磷菌Halomonas sp. YSR-3，菌体呈杆状，大小为3.5 μm×1 μm，革兰氏阴性，好氧生长，能运动。透射电镜观察发现，菌体内有致密颗粒。经DAPI染色确定该致密颗粒是多磷酸盐，亦可称为异染粒、迂回体。16S rDNA鉴定结果表明，YSR-3与Halomonas属中的marine bacterium B5-7有较高的同源性，相似值99%。YSR-3的生理生化特性：对氯霉素和卡那霉素敏感；淀粉水解呈阳性；反硝化和几丁质降解呈阴性；能将葡萄糖作为唯一碳源和能源。 对YSR-3的培养条件进行优化。以海水2216培养基、24 ℃、180 rpm、pH 6.5的条件培养，更利于菌体生长和菌体内多磷酸盐的形成。 对YSR-3的除磷特性进行研究。无磷培养时，菌体不能生长；用磷酸钾盐作为磷源时，菌体生长较好，形成多磷酸盐的菌体比例较高；较适合YSR-3菌体生长和多磷酸盐形成的磷源是KH2PO4，较适磷浓度为1.5 mmol/L。pH的变化影响菌株的生长、多磷酸盐形成和除磷效果。pH值为5时，菌体的数量几乎不增加，体内多磷酸盐和培养基中磷含量变化不大；pH值为6、7和8时，菌体生长良好，95%以上的菌体内形成多磷酸盐，培养基中磷含量明显下降。YSR-3在不同培养基中除磷量和除磷率不同。在高磷培养基中除磷量为0.7 mmol/L(磷含量由1.84 mmol/L降到1.14 mmol/L)，除磷率为37.5%；在低磷培养基中除磷量为0.02 mmol/L(磷含量由0.028 mmol/L降到0.008 mmol/L)，除磷率为72.2%。 以海洋聚磷菌Halomonas sp. YSR-3的总DNA为模板，用PCR法扩增D-海因酶基因和核苷二磷酸激酶基因，将扩增片段克隆到pGM-T载体，转化E.coli TOP10菌株，经蓝白斑筛选、菌落PCR得到阳性克隆，测序后对序列进行Blast比对分析。得到的D-海因酶基因序列长度为1510 bp，与Pseudomonas entomophila L48的海因酶基因序列的相似性为77%。翻译后的序列与Pseudomonas fluorescens Pf-5，Marinomonas sp. MED121，Burkholderia vietnamiensis G4的海因酶蛋白序列相似性分别为75%，73%，70%。得到的核苷二磷酸激酶基因序列长度为420bp，翻译后的序列与Loktanella vestfoldensis SKA53，Jannaschia sp. CCS1，Roseobacter sp. CCS2的核苷二磷酸激酶蛋白序列相似性分别为89%，86%，85%。 聚磷菌能将外界环境中的磷吸收到体内，并以多磷酸盐的形式储存。多磷酸盐对于细胞的生存和生长有很重要的作用，但目前对于多磷酸盐的形成过程以及过程调控还不是很清楚。在今后可以通过构建高效表达的重组菌，提高与除磷相关的酶的纯度及活性。同时可以将相关酶的基因进行突变，对基因表达的调控以及酶的代谢以及功能结构等多方面进行基础研究，使聚磷菌在生物除磷中得到广泛应用。

Enhanced activity of an In-Fe2O3/H-ZSM-5 catalyst for NO reduction with methane

Selective reduction of NO by CH4 on an In-Fe2O3/H-ZSM-5 catalyst was investigated in the presence of excess oxygen. Compared with In/H-ZSM-5, the In-Fe2O3/H-ZSM-5 catalyst with high Fe2O3 contents showed higher activity in a wide range of reaction temperatures. It was found that the addition of Fe2O3 yielded a promotion effect on CH4 activation. The influence of water vapor on NO conversion was also investigated. The activity of the In/H-ZSM-5 catalyst has been found to be strongly inhibited by water vapor, while the In-Fe2O3/H-ZSM-5 catalyst remained fairly active in the presence of 3.3% steam. (C) 2000 Elsevier Science B.V. All rights reserved.

Continuous non-destructive monitoring of cell health using impedance based interdigitated electrode structured sensors

This article examines some preliminary tests which were performed in order to evaluate the best electrode configuration (width and spacing) for cell culture analyses. Biochips packaged with indium tin oxide (ITO) interdigitated electrodes (IDEs) were used to perform impedance measurements on A549 cells cultured on the surface of the biochip. Several tests were carried out using a 10 mM solution of Sodium Chloride (NaCl), cell medium and the cell culture itself to characterize some of the configurations already fabricated in the facilities at Tyndall National Institute.

High-efficiency photovoltaics through mechanically stacked integration of solar cells based on the InP lattice constant

Solar Energy is a clean and abundant energy source that can help reduce reliance on fossil fuels around which questions still persist about their contribution to climate and long-term availability. Monolithic triple-junction solar cells are currently the state of the art photovoltaic devices with champion cell efficiencies exceeding 40%, but their ultimate efficiency is restricted by the current-matching constraint of series-connected cells. The objective of this thesis was to investigate the use of solar cells with lattice constants equal to InP in order to reduce the constraint of current matching in multi-junction solar cells. This was addressed by two approaches: Firstly, the formation of mechanically stacked solar cells (MSSC) was investigated through the addition of separate connections to individual cells that make up a multi-junction device. An electrical and optical modelling approach identified separately connected InGaAs bottom cells stacked under dual-junction GaAs based top cells as a route to high efficiency. An InGaAs solar cell was fabricated on an InP substrate with a measured 1-Sun conversion efficiency of 9.3%. A comparative study of adhesives found benzocyclobutene to be the most suitable for bonding component cells in a mechanically stacked configuration owing to its higher thermal conductivity and refractive index when compared to other candidate adhesives. A flip-chip process was developed to bond single-junction GaAs and InGaAs cells with a measured 4-terminal MSSC efficiency of 25.2% under 1-Sun conditions. Additionally, a novel InAlAs solar cell was identified, which can be used to provide an alternative to the well established GaAs solar cell. As wide bandgap InAlAs solar cells have not been extensively investigated for use in photovoltaics, single-junction cells were fabricated and their properties relevant to PV operation analysed. Minority carrier diffusion lengths in the micrometre range were extracted, confirming InAlAs as a suitable material for use in III-V solar cells, and a 1-Sun conversion efficiency of 6.6% measured for cells with 800 nm thick absorber layers. Given the cost and small diameter of commercially available InP wafers, InGaAs and InAlAs solar cells were fabricated on alternative substrates, namely GaAs. As a first demonstration the lattice constant of a GaAs substrate was graded to InP using an InxGa1-xAs metamorphic buffer layer onto which cells were grown. This was the first demonstration of an InAlAs solar cell on an alternative substrate and an initial step towards fabricating these cells on Si. The results presented offer a route to developing multi-junction solar cell devices based on the InP lattice parameter, thus extending the range of available bandgaps for high efficiency cells.

Atomic layer deposition of interface control layers for the fabrication of III/V MOS devices

The continued advancement of metal oxide semiconductor field effect transistor (MOSFET) technology has shifted the focus from Si/SiO2 transistors towards high-κ/III-V transistors for high performance, faster devices. This has been necessary due to the limitations associated with the scaling of the SiO2 thickness below ~1 nm and the associated increased leakage current due to direct electron tunnelling through the gate oxide. The use of these materials exhibiting lower effective charge carrier mass in conjunction with the use of a high-κ gate oxide allows for the continuation of device scaling and increases in the associated MOSFET device performance. The high-κ/III-V interface is a critical challenge to the integration of high-κ dielectrics on III-V channels. The interfacial chemistry of the high-κ/III-V system is more complex than Si, due to the nature of the multitude of potential native oxide chemistries at the surface with the resultant interfacial layer showing poor electrical insulating properties when high-κ dielectrics are deposited directly on these oxides. It is necessary to ensure that a good quality interface is formed in order to reduce leakage and interface state defect density to maximise channel mobility and reduce variability and power dissipation. In this work, the ALD growth of aluminium oxide (Al2O3) and hafnium oxide (HfO2) after various surface pre-treatments was carried out, with the aim of improving the high-κ/III-V interface by reducing the Dit – the density of interface defects caused by imperfections such as dangling bonds, dimers and other unsatisfied bonds at the interfaces of materials. A brief investigation was performed into the structural and electrical properties of Al2O3 films deposited on In0.53Ga0.47As at 200 and 300oC via a novel amidinate precursor. Samples were determined to experience a severe nucleation delay when deposited directly on native oxides, leading to diminished functionality as a gate insulator due to largely reduced growth per cycle. Aluminium oxide MOS capacitors were prepared by ALD and the electrical characteristics of GaAs, In0.53Ga0.47As and InP capacitors which had been exposed to pre-pulse treatments from triethyl gallium and trimethyl indium were examined, to determine if self-cleaning reactions similar to those of trimethyl aluminium occur for other alkyl precursors. An improved C-V characteristic was observed for GaAs devices indicating an improved interface possibly indicating an improvement of the surface upon pre-pulsing with TEG, conversely degraded electrical characteristics observed for In0.53Ga0.47As and InP MOS devices after pre-treatment with triethyl gallium and trimethyl indium respectively. The electrical characteristics of Al2O3/In0.53Ga0.47As MOS capacitors after in-situ H2/Ar plasma treatment or in-situ ammonium sulphide passivation were investigated and estimates of interface Dit calculated. The use of plasma reduced the amount of interface defects as evidenced in the improved C-V characteristics. Samples treated with ammonium sulphide in the ALD chamber were found to display no significant improvement of the high-κ/III-V interface. HfO2 MOS capacitors were fabricated using two different precursors comparing the industry standard hafnium chloride process with deposition from amide precursors incorporating a ~1nm interface control layer of aluminium oxide and the structural and electrical properties investigated. Capacitors furnished from the chloride process exhibited lower hysteresis and improved C-V characteristics as compared to that of hafnium dioxide grown from an amide precursor, an indication that no etching of the film takes place using the chloride precursor in conjunction with a 1nm interlayer. Optimisation of the amide process was carried out and scaled samples electrically characterised in order to determine if reduced bilayer structures display improved electrical characteristics. Samples were determined to exhibit good electrical characteristics with a low midgap Dit indicative of an unpinned Fermi level

The role of structure in the electrochemical performance of nanostructured metal oxides for lithium ion battery anodes

The Li-ion battery has for a number of years been a key factor that has enabled an ever increasing number of modern consumer devices, while in recent years has also been sought to power a range of emerging electric and hybrid electric vehicles. Due to their importance and popularity, a number of characteristics of Li-ion batteries have been subjected to intense work aimed at radical improvement. Although electrode material selection intrinsically defines characteristics like maximum capacity or voltage, engineering of the electrode structure may yield significant improvements to the lifetime performance of the battery, which would not be available if the material was used in its bulk form. The body of work presented in this thesis describes the relationship between the structure of electrochemically active materials and the course of the electrochemical processes occurring within the electrode. Chapter one describes the motivation behind the research presented herein. Chapter two serves to highlight a number of key advancements which have been made and detailed in the literature over recent years, pertaining to the use of nanostructured materials in Li-ion technology. Chapter three details methods and techniques applied in developing the body of work presented in this thesis. Chapter four details structural, molecular and electrochemical characteristics of tin oxide nanoparticle based electrodes, with particular emphasis on the relationship between the size distribution and the electrode performance. Chapter five presents findings of structural, electrochemical and optical study of indium oxide nanoparticles grown on silicon by molecular beam epitaxy. In chapter 6, tin oxide inverted opal electrodes are investigated for the conduct of the electrochemical performance of the electrodes under varying rate of change of potential. Chapter 7 presents the overall conclusions drawn from the results presented in this thesis, coupled with an indication of potential future work which may be explored further.

A highly efficient sensor platform using simply manufactured nanodot patterned substrates

Block copolymer (BCP) self-assembly is a low-cost means to nanopattern surfaces. Here, we use these nanopatterns to directly print arrays of nanodots onto a conducting substrate (Indium Tin Oxide (ITO) coated glass) for application as an electrochemical sensor for ethanol (EtOH) and hydrogen peroxide (H

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

On the contribution of stereochemistry to human ITPK1 specificity: Ins(1,4,5,6)P4 is not a physiologic substrate

Ins(1,4,5,6)P4, a biologically active cell constituent, was recently advocated as a substrate of human Ins(3,4,5,6)P4 1-kinase (hITPK1), because stereochemical factors were believed relatively unimportant to specificity [Miller, G.J. Wilson, M.P. Majerus, P.W. and Hurley, J.H. (2005) Specificity determinants in inositol polyphosphate synthesis: crystal structure of inositol 1,3,4-triphosphate 5/6-kinase. Mol. Cell. 18, 201-212]. Contrarily, we provide three examples of hITPK1 stereospecificity. hITPK1 phosphorylates only the 1-hydroxyl of both Ins(3,5,6)P3 and the meso-compound, Ins(4,5,6)P3. Moreover, hITPK1 has >13,000-fold preference for Ins(3,4,5,6)P4 over its enantiomer, Ins(1,4,5,6)P4. The biological significance of hITPK1 being stereospecific, and not physiologically phosphorylating Ins(1,4,5,6)P4, is reinforced by our demonstrating that Ins(1,4,5,6)P4 is phosphorylated (K(m) = 0.18 microM) by inositolphosphate-multikinase.

Friedel-Crafts Benzoylation of Anisole in Ionic Liquids: Catalysis, Separation, and Recycle Studies

The comparison of three ionic liquid-mediated catalytic processes for the benzoylation of anisole with benzoic anhydride is presented. A detailed understanding of the mechanism by which the zeolite and metal triflate reactions in bis{trifluoromethanesulfonyl}imide-based ionic liquids has been reported previously, and these routes are considered together with an indium chloride-based ionic liquid system. Solvent extraction and vacuum/steam distillation have been assessed as possible workup procedures, and an overall preliminary economic evaluation of each overall process is reported. Although the predominant activity is associated with the in situ formation of a homogeneous acid catalyst, the low cost and facile separation of the zeolite-catalysed process leads to this route being the most economically viable overall option. The results of a continuous flow miniplant based on the zeolite catalyst are also presented and compared with the reaction using a small plug How reactor.

Synthesis of a neodymium-quinolate complex for near-infrared electroluminescence applications

A structurally pure, near-infrared emissive Nd-(5,7-dichloro-8-hydroxyquinoline)4 tetrakis complex has been synthesized. When incorporated as a dopant in the blue emissive, hole conducting polymer poly(N-vinylcarbazole), PVK, sensitized neodymium ion emission was observed following photo-excitation of the polymer host. OLED devices were fabricated by spin-casting layers of the doped polymer onto glass/indium tin oxide (ITO)/3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates. An external quantum efficiency of 1 x 10(-3)% and a near-infrared irradiance of 2.0 nW/mm(2) at 25 mA/mm(2) and 20 V was achieved using glass/ITO/PEDOT/ PVK:Nd-(5,7-dichloro-8-hydroxyquinoline)(4)/Ca/Al devices. (C) 2007 Elsevier B.V. All rights reserved.

Near infrared electroluminescence from neodymium complex-doped polymer light emitting diodes

Organic light emitting diode devices employing organometallic Nd(9-hydroxyphenalen-1-one)(3) complexes as near infrared emissive dopants dispersed within poly(N-vinylcarbazole) (PVK) host matrices have been fabricated by spin-casting layers of the doped polymer onto glass/indium tin oxide (ITO)/3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates. Room temperature electroluminescence, centered at similar to 1065 nm. was observed from devices top contacted by evaporated aluminum or calcium metal cathodes and was assigned to transitions between the F-4(3/2) -> I-4(11/2) levels of the Nd3+ ions. In particular, a near infrared irradiance of 8.5 nW/mm(2) and an external quantum efficiency of 0.007% was achieved using glass/ITO/PEDOT/PVK:Nd(9-hydroxyphenalen-1-one)(3)/Ca/Al devices. (c) 2005 Elsevier B.V. All rights reserved.

Narrow bandwidth red electroluminescence from solution-processed lanthanide-doped polymer thin films

Narrow bandwidth red electroluminescence from OLED devices fabricated using a simple solution-based approach is demonstrated. A spin-casting method is employed to fabricate organic light emitting diode (OLED) devices comprising a poly(N-vinylcarbazole) (PVK) host matrix doped with a europium beta-diketonate complex, Eu(dbM)(3)(Phen) (dibenzoylmethanate, dbm; 1,10-phenanthroline, Phen) on glass/ indium tin oxide (ITO)/3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates. Saturated red europium ion emission, based on the (5)Do ->F-7(2) transition, is centered at a wavelength of 612 nm with a full width at half maximum of 3.5 rim. A maximum external quantum efficiency of 6.3 x 10(-2) cd/A (3.1 X 10(-2)%) and a maximum luminance of 130 cd/M-2 at 400 mA/cm(2) and 25 V is measured for ITO/PEDOT/PVK:Eu(dbM)3(Phen)/Ca/Al devices. This measured output luminance is comparable to that of devices fabricated using more sophisticated small molecule evaporation techniques. (c) 2005 Elsevier B.V All rights reserved.