893 resultados para High Power Semiconductor Laser Arrays


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We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers. © 2010 American Institute of Physics.

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In this work, we investigate the impact of minute amounts of pure nitrogen addition into conventional methane/hydrogen mixtures on the growth characteristics of nanocrystalline diamond (NCD) films by microwave plasma assisted chemical vapour deposition (MPCVD), under high power conditions. The NCD films were produced from a gas mixture of 4% CH4/H2 with two different concentrations of N2 additive and microwave power ranging from 3.0 kW to 4.0 kW, while keeping all the other operating parameters constant. The morphology, grain size, microstructure and texture of the resulting NCD films were characterized by using scanning electron microscope (SEM), micro-Raman spectroscopy and X-ray diffraction (XRD) techniques. N2 addition was found to be the main parameter responsible for the formation and for the key change in the growth characteristics of NCD films under the employed conditions. Growth rates ranging from 5.4 μm/h up to 9.6 μm/h were achieved for the NCD films, much higher than those usually reported in the literature. The enhancing factor of nitrogen addition on NCD growth rate was obtained by comparing with the growth rate of large-grained microcrystalline diamond films grown without nitrogen and discussed by comparing with that of single crystal diamond through theoretical work in the literature. This achievement on NCD growth rate makes the technology interesting for industrial applications where fast coating of large substrates is highly desirable.

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We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers. © 2010 American Institute of Physics.

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We design a Raman fibre laser with a short cavity providing narrow-band generation. The laser is based on a commercial single-mode fibre (980-HP) span of 12 m length. The laser generates up to 11 W of intracavity power. Even at high generation power, the laser spectrum is narrow (less than 200 pm) - several times narrower than for conventional Raman fibre lasers based on longer fibres. The intensity dynamics reveals indications of mode correlations. © 2014 Astro Ltd.

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We report the results of an experimental study aimed at improving the performance of actively Q-switched fiber lasers. Unlike generic design schemes employing photonic crystal fibers, largemodal diameter fibers or double-clad fibers, we demonstrate a high-power, actively Q-switched laser based on standard com- munication erbium doped fibers with peak irradiance beyond the state-of-the-art at 3.1 GW/cm2 . The laser had 2.2 kW peak power, 15.5 ns pulse duration and 36.8 µJ pulse energy. We have also investigated the dynamics of pulse generation and have success- fully suppressed pulse instabilities caused by backscattered laser emission reaching the pump laser diodes.

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A compact high-power yellow-green continuous wave (CW) laser source based on second-harmonic generation (SHG) in a 5% MgO doped periodically poled congruent lithium niobate (PPLN) waveguide crystal pumped by a quantum-dot fiber Bragg grating (QD-FBG) laser diode is demonstrated. A frequency-doubled power of 90.11 mW at the wavelength of 560.68 nm with a conversion efficiency of 52.4% is reported. To the best of our knowledge, this represents the highest output power and conversion efficiency achieved to date in this spectral region from a diode-pumped PPLN waveguide crystal, which could prove extremely valuable for the deployment of such a source in a wide range of biomedical applications.

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We propose a simple Er-doped fiber laser configuration for achieving stable dual-wavelength oscillation at room temperature, in which a high birefringence fiber Bragg grating was used as the wavelength-selective component. Stable dual-wavelength oscillation at room temperature with a wavelength spacing of 0.23nm and mutually orthogonal polarisation states was achieved by utilising the polarisation hole burning effect. An amplitude variation of less than 0.7dB over 80s period was obtained for both wavelengths.

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Optical manipulation of microscopic objects (including living cells) using Bessel beams from semiconductor lasers has been demonstrated for the first time. In addition, it has been found in the experiments that a Bessel beam of sufficient power from a semiconductor laser makes it possible to manipulate simultaneously several microscopic objects captured into its central lobe and the first ring. © 2014 Pleiades Publishing, Ltd.

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High-power and high-voltage gain dc-dc converters are key to high-voltage direct current (HVDC) power transmission for offshore wind power. This paper presents an isolated ultra-high step-up dc-dc converter in matrix transformer configuration. A flyback-forward converter is adopted as the power cell and the secondary side matrix connection is introduced to increase the power level and to improve fault tolerance. Because of the modular structure of the converter, the stress on the switching devices is decreased and so is the transformer size. The proposed topology can be operated in column interleaved modes, row interleaved modes, and hybrid working modes in order to deal with the varying energy from the wind farm. Furthermore, fault-tolerant operation is also realized in several fault scenarios. A 400-W dc-dc converter with four cells is developed and experimentally tested to validate the proposed technique, which can be applied to high-power high-voltage dc power transmission.

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This paper will review the recent advances in the field of ultrashort pulse generation from optically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs). In this review, we will summarize the most significant results presented over the last 15 years, before highlighting recent breakthroughs related to mode-locked VECSELs by different research groups. Different mode-locking techniques for OP-VECSELs are described in detail. Previously, saturable absorbers, such as semiconductor saturable absorber mirrors—external, or internal as in mode-locked integrated external-cavity surface emitting lasers (MIXSEL)—, and recently, novel-material-based carbon-nanotube and graphene saturable absorbers have been employed. A new mode-locking method was presented and discussed in recent years. This method is referred to as self-mode-locking or saturable-absorber-free operation of mode-locked VECSELs. In this context, we particularly focus on achievements regarding self-mode-locking, which is considered a promising technique for the realization of high-power, compact, robust and cost-efficient ultrashort pulse lasers. To date, the presented mode-locking techniques have led to great enhancement in average powers, peak powers, and repetition rates that can be achieved with passively mode-locked VECSELs.

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The main objective for physics based modeling of the power converter components is to design the whole converter with respect to physical and operational constraints. Therefore, all the elements and components of the energy conversion system are modeled numerically and combined together to achieve the whole system behavioral model. Previously proposed high frequency (HF) models of power converters are based on circuit models that are only related to the parasitic inner parameters of the power devices and the connections between the components. This dissertation aims to obtain appropriate physics-based models for power conversion systems, which not only can represent the steady state behavior of the components, but also can predict their high frequency characteristics. The developed physics-based model would represent the physical device with a high level of accuracy in predicting its operating condition. The proposed physics-based model enables us to accurately develop components such as; effective EMI filters, switching algorithms and circuit topologies [7]. One of the applications of the developed modeling technique is design of new sets of topologies for high-frequency, high efficiency converters for variable speed drives. The main advantage of the modeling method, presented in this dissertation, is the practical design of an inverter for high power applications with the ability to overcome the blocking voltage limitations of available power semiconductor devices. Another advantage is selection of the best matching topology with inherent reduction of switching losses which can be utilized to improve the overall efficiency. The physics-based modeling approach, in this dissertation, makes it possible to design any power electronic conversion system to meet electromagnetic standards and design constraints. This includes physical characteristics such as; decreasing the size and weight of the package, optimized interactions with the neighboring components and higher power density. In addition, the electromagnetic behaviors and signatures can be evaluated including the study of conducted and radiated EMI interactions in addition to the design of attenuation measures and enclosures.

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Optical coherence tomography (OCT) is a noninvasive three-dimensional interferometric imaging technique capable of achieving micrometer scale resolution. It is now a standard of care in ophthalmology, where it is used to improve the accuracy of early diagnosis, to better understand the source of pathophysiology, and to monitor disease progression and response to therapy. In particular, retinal imaging has been the most prevalent clinical application of OCT, but researchers and companies alike are developing OCT systems for cardiology, dermatology, dentistry, and many other medical and industrial applications.

Adaptive optics (AO) is a technique used to reduce monochromatic aberrations in optical instruments. It is used in astronomical telescopes, laser communications, high-power lasers, retinal imaging, optical fabrication and microscopy to improve system performance. Scanning laser ophthalmoscopy (SLO) is a noninvasive confocal imaging technique that produces high contrast two-dimensional retinal images. AO is combined with SLO (AOSLO) to compensate for the wavefront distortions caused by the optics of the eye, providing the ability to visualize the living retina with cellular resolution. AOSLO has shown great promise to advance the understanding of the etiology of retinal diseases on a cellular level.

Broadly, we endeavor to enhance the vision outcome of ophthalmic patients through improved diagnostics and personalized therapy. Toward this end, the objective of the work presented herein was the development of advanced techniques for increasing the imaging speed, reducing the form factor, and broadening the versatility of OCT and AOSLO. Despite our focus on applications in ophthalmology, the techniques developed could be applied to other medical and industrial applications. In this dissertation, a technique to quadruple the imaging speed of OCT was developed. This technique was demonstrated by imaging the retinas of healthy human subjects. A handheld, dual depth OCT system was developed. This system enabled sequential imaging of the anterior segment and retina of human eyes. Finally, handheld SLO/OCT systems were developed, culminating in the design of a handheld AOSLO system. This system has the potential to provide cellular level imaging of the human retina, resolving even the most densely packed foveal cones.

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Incumbent telecommunication lasers emitting at 1.5 µm are fabricated on InP substrates and consist of multiple strained quantum well layers of the ternary alloy InGaAs, with barriers of InGaAsP or InGaAlAs. These lasers have been seen to exhibit very strong temperature dependence of the threshold current. This strong temperature dependence leads to a situation where external cooling equipment is required to stabilise the optical output power of these lasers. This results in a significant increase in the energy bill associated with telecommunications, as well as a large increase in equipment budgets. If the exponential growth trend of end user bandwidth demand associated with the internet continues, these inefficient lasers could see the telecommunications industry become the dominant consumer of world energy. For this reason there is strong interest in developing new, much more efficient telecommunication lasers. One avenue being investigated is the development of quantum dot lasers on InP. The confinement experienced in these low dimensional structures leads to a strong perturbation of the density of states at the band edge, and has been predicted to result in reduced temperature dependence of the threshold current in these devices. The growth of these structures is difficult due to the large lattice mismatch between InP and InAs; however, recently quantum dots elongated in one dimension, known as quantum dashes, have been demonstrated. Chapter 4 of this thesis provides an experimental analysis of one of these quantum dash lasers emitting at 1.5 µm along with a numerical investigation of threshold dynamics present in this device. Another avenue being explored to increase the efficiency of telecommunications lasers is bandstructure engineering of GaAs-based materials to emit at 1.5 µm. The cause of the strong temperature sensitivity in InP-based quantum well structures has been shown to be CHSH Auger recombination. Calculations have shown and experiments have verified that the addition of bismuth to GaAs strongly reduces the bandgap and increases the spin orbit splitting energy of the alloy GaAs1−xBix. This leads to a bandstructure condition at x = 10 % where not only is 1.5 µm emission achieved on GaAs-based material, but also the bandstructure of the material can naturally suppress the costly CHSH Auger recombination which plagues InP-based quantum-well-based material. It has been predicted that telecommunications lasers based on this material system should operate in the absence of external cooling equipment and offer electrical and optical benefits over the incumbent lasers. Chapters 5, 6, and 7 provide a first analysis of several aspects of this material system relevant to the development of high bismuth content telecommunication lasers.

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A small scale sample nuclear waste package, consisting of a 28 mm diameter uranium penny encased in grout, was imaged by absorption contrast radiography using a single pulse exposure from an X-ray source driven by a high-power laser. The Vulcan laser was used to deliver a focused pulse of photons to a tantalum foil, in order to generate a bright burst of highly penetrating X-rays (with energy >500 keV), with a source size of <0.5 mm. BAS-TR and BAS-SR image plates were used for image capture, alongside a newly developed Thalium doped Caesium Iodide scintillator-based detector coupled to CCD chips. The uranium penny was clearly resolved to sub-mm accuracy over a 30 cm2 scan area from a single shot acquisition. In addition, neutron generation was demonstrated in situ with the X-ray beam, with a single shot, thus demonstrating the potential for multi-modal criticality testing of waste materials. This feasibility study successfully demonstrated non-destructive radiography of encapsulated, high density, nuclear material. With recent developments of high-power laser systems, to 10 Hz operation, a laser-driven multi-modal beamline for waste monitoring applications is envisioned.

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Semiconductor lasers have the potential to address a number of critical applications in advanced telecommunications and signal processing. These include applications that require pulsed output that can be obtained from self-pulsing and mode-locked states of two-section devices with saturable absorption. Many modern applications place stringent performance requirements on the laser source, and a thorough understanding of the physical mechanisms underlying these pulsed modes of operation is therefore highly desirable. In this thesis, we present experimental measurements and numerical simulations of a variety of self-pulsation phenomena in two-section semiconductor lasers with saturable absorption. Our theoretical and numerical results will be based on rate equations for the field intensities and the carrier densities in the two sections of the device, and we establish typical parameter ranges and assess the level of agreement with experiment that can be expected from our models. For each of the physical examples that we consider, our model parameters are consistent with the physical net gain and absorption of the studied devices. Following our introductory chapter, the first system that we consider is a two-section Fabry-Pérot laser. This example serves to introduce our method for obtaining model parameters from the measured material dispersion, and it also allows us to present a detailed discussion of the bifurcation structure that governs the appearance of selfpulsations in two-section devices. In the following two chapters, we present two distinct examples of experimental measurements from dual-mode two-section devices. In each case we have found that single mode self-pulsations evolve into complex coupled dualmode states following a characteristic series of bifurcations. We present optical and mode resolved power spectra as well as a series of characteristic intensity time traces illustrating this progression for each example. Using the results from our study of a twosection Fabry-Pérot device as a guide, we find physically appropriate model parameters that provide qualitative agreement with our experimental results. We highlight the role played by material dispersion and the underlying single mode self-pulsing orbits in determining the observed dynamics, and we use numerical continuation methods to provide a global picture of the governing bifurcation structure. In our concluding chapter we summarise our work, and we discuss how the presented results can inform the development of optimised mode-locked lasers for performance applications in integrated optics.