965 resultados para Heterocyclic analog


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Quality of analog fishery products invariably depends on the gel characteristics and nutritional status of minced meat. With an objective to find out the effect of water washing on kamaboko gel, the minced meat from Croaker fish was washed for four times (5 minutes each) using chilled water at a temperature of 8-10°C. Results reflected noticeable improvement in folding test and SSN% of kamaboko with essential decrease in fat content, water soluble proteins, expressible water and quality parameters like NPN, VBN, TMA, FFA and PV denoting superior gel quality than control sample after repeated washing. The results indicated that there was a definite improvement in functional properties such as gel forming ability, expressible water content of the croaker minced meat essential decrease in fat content, water soluble proteins, expressible water and quality parameters after each wash, but two washes of 5 minutes duration each was necessary to achieve satisfactory results.

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Synapses exhibit an extraordinary degree of short-term malleability, with release probabilities and effective synaptic strengths changing markedly over multiple timescales. From the perspective of a fixed computational operation in a network, this seems like a most unacceptable degree of added variability. We suggest an alternative theory according to which short-term synaptic plasticity plays a normatively-justifiable role. This theory starts from the commonplace observation that the spiking of a neuron is an incomplete, digital, report of the analog quantity that contains all the critical information, namely its membrane potential. We suggest that a synapse solves the inverse problem of estimating the pre-synaptic membrane potential from the spikes it receives, acting as a recursive filter. We show that the dynamics of short-term synaptic depression closely resemble those required for optimal filtering, and that they indeed support high quality estimation. Under this account, the local postsynaptic potential and the level of synaptic resources track the (scaled) mean and variance of the estimated presynaptic membrane potential. We make experimentally testable predictions for how the statistics of subthreshold membrane potential fluctuations and the form of spiking non-linearity should be related to the properties of short-term plasticity in any particular cell type.

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The article discusses the progress and issues related to transparent oxide semiconductor (TOS) TFTs for advanced display and imaging applications. Amorphous oxide semiconductors continue to spark new technological developments in transparent electronics on a multitude of non-conventional substrates. Applications range from high-frame-rate interactive displays with embedded imaging to flexible electronics, where speed and transparency are essential requirements. TOS TFTs exhibit high transparency as well as high electron mobility even when fabricated at room temperature. Compared to conventional a-Si TFT technology, TOS TFTs have higher mobility and sufficiently good uniformity over large areas, similar in many ways to LTPS TFTs. Moreover, because the amorphous oxide semiconductor has higher mobility compared to that of conventional a-Si TFT technology, this allows higher-frame-rate display operation. This would greatly benefit OLED displays in particular because of the need for lower-cost higher-mobility analog circuits at every subpixel.

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We study the problem of finding a local minimum of a multilinear function E over the discrete set {0,1}n. The search is achieved by a gradient-like system in [0,1]n with cost function E. Under mild restrictions on the metric, the stable attractors of the gradient-like system are shown to produce solutions of the problem, even when they are not in the vicinity of the discrete set {0,1}n. Moreover, the gradient-like system connects with interior point methods for linear programming and with the analog neural network studied by Vidyasagar (IEEE Trans. Automat. Control 40 (8) (1995) 1359), in the same context. © 2004 Elsevier B.V. All rights reserved.

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Using the nonlinear analog of the Fake Riccati equation developed for linear systems, we derive an inverse optimality result for several receding-horizon control schemes. This inverse optimality result unifies stability proofs and shows that receding-horizon control possesses the stability margins of optimal control laws. © 1997 Elsevier Science B.V.

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It is widely acknowledged that ceramic armor experiences an unsteady penetration response: an impacting projectile may erode on the surface of a ceramic target without substantial penetration for a significant amount of time and then suddenly start to penetrate the target. Although known for more than four decades, this phenomenon, commonly referred to as dwell, remains largely unexplained. Here, we use scaled analog experiments with a low-speed water jet and a soft, translucent target material to investigate dwell. The transient target response, in terms of depth of penetration and impact force, is captured using a high-speed camera in combination with a piezoelectric force sensor. We observe the phenomenon of dwell using a soft (noncracking) target material. The results show that the penetration rate increases when the flow of the impacting water jet is reversed due to the deformation of the jet-target interface--this reversal is also associated with an increase in the force exerted by the jet on the target. Creep penetration experiments with a constant indentation force did not show an increase in the penetration rate, confirming that flow reversal is the cause of the unsteady penetration rate. Our results suggest that dwell can occur in a ductile noncracking target due to flow reversal. This phenomenon of flow reversal is rather widespread and present in a wide range of impact situations, including water-jet cutting, needleless injection, and deposit removal via a fluid jet.

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The analog modulation performance of a high-power two-electrode tapered laser is investigated. A 25dB dynamic range for 2.4GHz 802.11g signals is achieved with a 26dB loss budget, showing a >1km free space range is possible. © 2010 Optical Society of America.

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Lyapunov's second theorem is an essential tool for stability analysis of differential equations. The paper provides an analog theorem for incremental stability analysis by lifting the Lyapunov function to the tangent bundle. The Lyapunov function endows the state-space with a Finsler structure. Incremental stability is inferred from infinitesimal contraction of the Finsler metrics through integration along solutions curves. © 2013 IEEE.

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This paper proposes smart universal multiple-valued (MV) logic gates by transferring single electrons (SEs). The logic gates are based on MOSFET based SE turnstiles that can accurately transfer SEs with high speed at high temperature. The number of electrons transferred per cycle by the SE turnstile is a quantized function of its gate voltage, and this characteristic is fully exploited to compactly finish MV logic operations. First, we build arbitrary MV literal gates by using pairs of SE turnstiles. Then, we propose universal MV logic-to-value conversion gates and MV analog-digital conversion circuits. We propose a SPICE model to describe the behavior of the MOSFET based SE turnstile. We simulate the performances of the proposed gates. The MV logic gates have small number of transistors and low power dissipations.

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This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

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This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

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Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single crystal has surpassed the best terrestrial counterparts. (C) 2001 American Institute of Physics.

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This paper presents a 2GS/s 10-bit CMOS digital-to-analog converter (DAC). This DAC consists of a unit current-cell matrix for 6MSBs and another unit current-cell matrix for 4LSBs, trading off between the precision and size of the chip. The Current Mode Logic (CML) is used to ensure high speed, and a double Centro-symmetric current matrix is designed by the Q(2) random walk strategy in order to ensure the linearity of the DAC. The DAC occupies 2.2 x 2.2 mm2 of die area, and consumes 790mw at a single 3.3V power supply.

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This paper presents a 5GHz double-balanced mixer with DC-offset cancellation circuit for direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard. The analog feedback loop is used, to eliminate the DC-offset at the output of the double-balanced mixer. The test results show that the mixer with DC-offset cancellation circuit has voltage conversion gain of 9.5dB at 5.15GHz, noise figure of 13.5dB, IIP3 of 7.6 dBm, 1.73mV DC-offset voltage and 67mW power with 3.3-V power supply. The DC-offset cancellation circuit has less than 0.1mm(2) additional area and 0.3mW added power dissipation. The direct conversion WLAN receiver has been implemented in a 0.35 mu m SiGe BiCMOS technology.

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This paper presents experimental results of an analog baseband circuit for China Multimedia Mobile Broadcasting (CMMB) direct conversion receiver in 0.35um SiGe BiCMOS process. It is the first baseband of CMMB RFIC reported so far. A 8(th)-order chebyshev low pass filter (LPF) with calibration system is used in the analog baseband circuit, the filter provides 0.5 dB passband ripple and -35 dB attenuation at 6MHz with the cutoff frequency at 4MHz, the calibration of filter is reported to achieve the bandwidth accuracy of 3%. The baseband variable gain amplifier (VGA) achieves more than 40 dB gain tuning with temperature compensation. In addition, A DC offset cancellation circuit is also introduced to remove the offset from layout and self-mixing, and the remaining offset voltage and current consumption are only 6mV and 412uA respectively. Implemented in a 0.35um SiGe technology with 1.1 mm(2) die size, this tuner baseband achieves OIP3 of 25.5 dBm and dissipate 16.4 mA under 2.8-V supply.