864 resultados para Coopérative de films


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The ac electrical response is studied in thin films composed of well-defined nanometric Co particles embedded in an insulating ZrO2 matrix which tends to coat them, preventing the formation of aggregates. In the dielectric regime, ac transport originates from the competition between interparticle capacitive Cp and tunneling Rt channels, the latter being thermally assisted. This competition yields an absorption phenomenon at a characteristic frequency 1/(RtCp), which is observed in the range 1010 000 Hz. In this way, the effective ac properties mimic the universal response of disordered dielectric materials. Temperature and frequency determine the complexity and nature of the ac electrical paths, which have been successfully modeled by an Rt-Cp network.

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Epitaxial and fully strained SrRuO3 thin films have been grown on SrTiO3(100). At initial stages the growth mode is three-dimensional- (3D-)like, leading to a finger-shaped structure aligned with the substrate steps and that eventually evolves into a 2D step-flow growth. We study the impact that the defect structure associated with this unique growth mode transition has on the electronic properties of the films. Detailed analysis of the transport properties of nanometric films reveals that microstructural disorder promotes a shortening of the carrier mean free path. Remarkably enough, at low temperatures, this results in a reinforcement of quantum corrections to the conductivity as predicted by recent models of disordered, strongly correlated electronic systems. This finding may provide a simple explanation for the commonly observed¿in conducting oxides-resistivity minima at low temperature. Simultaneously, the ferromagnetic transition occurring at about 140 K, becomes broader as film thickness decreases down to nanometric range. The relevance of these results for the understanding of the electronic properties of disordered electronic systems and for the technological applications of SrRuO3¿and other ferromagnetic and metallic oxides¿is stressed.

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A comparative study of LaxBi1-xMnO3 thin films grown on SrTiO3 substrates is reported. It is shown that these films grow epitaxially in a narrow pressure-temperature range. A detailed structural and compositional characterization of the films is performed within the growth window. The structure and the magnetization of this system are investigated. We find a clear correlation between the magnetization and the unit-cell volume that we ascribe to Bi deficiency and the resultant introduction of a mixed valence on the Mn ions. On these grounds, we show that the reduced magnetization of LaxBi1-xMnO3 thin films compared to the bulk can be explained quantitatively by a simple model, taking into account the deviation from nominal composition and the Goodenough-Kanamori-Anderson rules of magnetic interactions.

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This thesis deals with the preparation and properties of two compounds of V-II family, viz. bismuth telluride and bismuth oxide, in thin filmform. In the first chapter is given the resume of basic solid state physics relevant to the work reported here. In the second chapter the different methods of thin film preparationtia described. Third chapter deals with the experimental techniques used for preparation and characterization of the films. Fourth chapter deals with the preparation and propertiesof bismuth telluride films. In next four chapters, the preparation and properties of bismuth oxide films are discussed in detail. In the last chapter the use of Bi205 films in the fabrication of Heat mirrors is examined and discussed.

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Systematic investigations on prevulcanization of NR latex with special reference to the influence of storage of latex and after-treatments of films, have been carried out. The other aspects studied include the effect of temperature on sulphur prevulcanization, the extent of crosslinking, tensile properties, stress relaxation characteristics, water absorption and leaching characteristics of prevulcanizcd latex films

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The main challenges in the deposition of cathode materials in thin film form are the reproduction of stoichiometry close to the bulk material and attaining higher rates of deposition and excellent crystallinity at comparatively lower annealing temperatures. There are several methods available to develop stoichiometric thin film cathode materials including pulsed laser deposition; plasma enhanced chemical vapor deposition, electron beam evaporation, electrostatic spray deposition and RF magnetron sputtering. Among them the most versatile method is the sputtering technique, owing to its suitability for micro-fabricating the thin film batteries directly on chips in any shape or size, and on flexible substrates, with good capacity and cycle life. The main drawback of the conventional sputtering technique using RF frequency of 13.56MHz is its lower rate of deposition, compared to other deposition techniques A typical cathode layer for a thin film battery requires a thickness around one micron. To deposit such thick layers using convention RF sputtering, longer time of deposition is required, since the deposition rate is very low, which is typically 10-20 Å/min. This makes the conventional RF sputtering technique a less viable option for mass production in an economical way. There exists a host of theoretical and experimental evidences and results that higher excitation frequency can be efficiently used to deposit good quality films at higher deposition rates with glow discharge plasma. The effect of frequencies higher than the conventional one (13.56MHz) on the RF magnetron sputtering process has not been subjected to detailed investigations. Attempts have been made in the present work, to sputter deposit spinel oxide cathode films, using high frequency RF excitation source. Most importantly, the major challenge faced by the thin film battery based on the LiMn2O4 cathode material is the poor capacity retention during charge discharge cycling. The major causes for the capacity fading reported in LiMn2O4cathode materials are due to, Jahn-Teller distortion, Mn2+ dissolution into the electrolyte and oxygen loss in cathode material during cycling. The work discussed in this thesis is an attempt on overcoming the above said challenges and developing a high capacity thin film cathode material.

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The Thesis consist of the study of the electrical properties of antimony trisulphide films and the electrical behaviour of different metal contacts to antimony trisulphide films. Since the thermal evapouration of the compound antimony trisulphide as such mayresult in nonstoichiometric compound films , sb2s3 films in the present work were mostly prepared by the three temperature method ,keeping the substrate at different temperature ranging from 3031 to 4231 and evapourating antimony and sulphur simultaneously from separate sources.

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This thesis consists of a study of the effect of electrode films and overlayer films on the electrical properties of certain metal films. The films have been prepared on glass substrates by thermal evapouration in a vaccum 10 terr. The properties of Al films on Ag, Al,Au and Cu films on In electrodes ,and Bi/Ag bilayer films have been studied. The influence of annealing electrodes at higher temperature on the electrical properties of metal films has also been investigated. Further the effect of varying layer thickness in the bilayer films ,both annealed at higher temperature and annealed at room temperature have been examined.

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Due to the great versatility of the properties of polymer thin films, special interest has been taken in recent years on their preparation and electrical properties. The present thesis is entirely devoted to the study of the formation, structure and electrical properties of plasma» polymerised polyacrylonitrile (PAN) thin films. Eventhough the studies are confined to a single polymer film, the results in general are applicable to similar polar polymer films.

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The thesis aims to present the results of experimental investigations on the changes of optical properties of metallic thin films due to heating. The parameters which are measured are reflectivity, refractive indices and the ellipsometric quantities V and A . The materials used in the studies are metals like Silver, Aluminium and Copper. By applying the optical method the interdiffusion taking place in multilayer ‘films of Aluminium and Silver has also been studied. Special interest has been taken to reveal the mechanisms of the hillock growth and surface roughness caused by heating and their relation with the stress in the film

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The thesis is a report of the attempts made to prepare semiconducting and dielectric thin films and to study their electrical properties. It consists of (i) studies on the preparation and electrical characteristics of compound semiconductor thin films of silver sulphide and ferric hydroxide, and (ii) investigations on the electrical and dielectric properties of plasma polymerized thin films of para-toluidine element