889 resultados para 331.105.44[82]


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We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable. (C) 2005 American Institute of Physics.

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Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.

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Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

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Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.

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Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

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研究了黄土丘陵区油松天然次生林林窗的形状、大小结构、分布、形成木特征及其更新状况.结果表明:在油松天然次生林中,林冠林窗(CG)和扩展林窗(EG)面积均呈以小林窗为主的偏态分布.CG平均面积为31.15 m2,以20~40 m2林窗的数量比和面积比最大,分别为38.24%和30.50%;EG平均面积为58.04 m2,以30~60 m2的数量比和面积比最大,分别为36.77%和27.79%,且CG的平均面积占EG平均面积的53.67%;林窗形状多呈椭圆形,高度多在14~16 m;林窗形成年龄以10~20年为主,占33.82%.林窗中基折和枯立木分别占形成木总数的47.66%和23.44%.林窗形成的主要因素是人为间伐或盗伐,树木衰老等引起的抗性下降、干旱、病虫害等也是导致树木死亡的原因之一;每个林窗中平均有1.89个形成木,其中以2株形成木的林窗最多.林窗形成木主要是油松,其次为山杨、白桦和辽东栎等.形成木的径级呈明显的偏态分布,以10~20 cm和21~30 cm径级最为普遍,分别占总数的25.0%和45.31%,与林窗面积偏态分布吻合;林窗内林木的更新状况好于林下,且油松幼苗不存在断层,而油松林下幼苗在年...

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由于其独特的电子结构,笼内金属富勒烯(碳笼内包容金属原子)的研究一直吸引着人们极大的兴趣,目前已经合成并分离出的笼内金属富勒烯主要包括碳笼内包容铱、钪、镧系原子等。在本论文中我们利用质谱技术对笼内金属富勒烯Gd_2@C_(82)气相离子行为和C_(60)与丙烯酸甲酯气相离子反应进行研究,X光电子能谱对碳笼内轧原子的价态进行研究。笼内金属富勒烯Gd_2@C_(82)是利用电弧放电法合成的。将碳份与三氧化二钆 (C:Gd=1:100, 摩尔比)灌入碳棒,将为棒前处理后,在氦气份保护下进行放电。通过对空心富勒烯在不同沸点的溶解情况进行了研究,发现大碳数的空心富勒烯在高沸点容剂中有较大的溶解度。利用两步高温高压法,既先利用1,2,4-三甲2基苯对大碳数的空心富勒烯进行分离,然后利用吡啶对笼内金属富勒烯进行提取。利用三种不同的质谱电离方式:电喷雾 (ESI),激光解析飞行时间(LDI-TOF),共振电子捕获技术(REC)来研究笼内金属富勒烯的气相离子特征。实验结果表明LDI-TOF和REC电离技术得到的质谱谱图中,笼内金属富勒烯和空心富勒烯均出现分子离子峰,但在电喷雾质谱谱图中只有笼内金属富勒烯出现分子离子峰。结合这一实验结果和理论分析说明碳笼内钆离子偏离碳中心位置。通过对比笼内金属富勒烯Gd@C_(82)和三氧化二钆中钆离子的光电子能谱谱图,Gd@C_(82)的电子结构应表示为Gd~(3+)@C_(82)~(3-)。利用四极杆质谱仪对C_(60)分子[C_(60)H]~+和加成产物为[C_(60)C_4H_3O]~+,后者是丙烯酸甲酯分子经过α短裂后与质子化[C_(60)H]~+ 发生加成反应所得的产物,在限制性Hartree-Fock条件下,采用AM1半经验量子化学计算方法对加成产[C_(60)C_3H_3O]~+八种可能结构的产物进行计算,得出了三种可能的最稳定的环加成同分异构体。

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在长期的吸血进化过程中,吸血节肢动物在唾液腺中形成了一系列有助于适应吸 血生存的活性物质,这些物质包括血管舒张分子、血小板聚集抑制分子、抗凝血分子 和其它相互作用的分子。此外,为了得到洁净的血液和防止在吸血过程中被病原微生 物感染,吸血节肢动物在其唾液腺中形成了许多防御物质以保护自身和宿主,这些物 质包括抗菌肽和蛋白酶抑制剂等。因此,研究吸血节肢动物的唾液腺重要活性物质和 转录体组学有助于弄清其吸血机制。 姚虻(Tabancus yao Macquart)是我国特有的牛虻,其雌性在产卵前需要吸食大 型哺乳动物的血液以促使卵的发育。我们希望通过对姚虻唾液腺重要活性物质和转录 体组学的研究揭示姚虻成功从宿主获得血餐的分子机制,找到具有药用前景的活性物 质和为控制该虫及其传播的疾病的提供理论基础。 首先,我们对其唾液腺匀浆物活性进行了系统分析,发现姚虻唾液腺匀浆物具有 如下活性:有抗金黄色葡萄球菌活性,并且对大肠杆菌、白色念球菌和枯草杆菌都有 效;能够抑制ADP 诱导的洗涤和富血浆血小板的聚集;能够凝集兔红细胞、能够抑制 丝氨酸蛋白酶对小肽底物的水解、具有对纤维蛋白原的水解活性(金属蛋白酶)、具 有过敏原活性、能够促进肥大细胞脱粒和组氨释放;反复检测而没有发现的活性如下: 磷脂酶A2(PLA2)活性、溶血活性、血浆凝固活性、体外抗补体、血管生长促进与抑制 活性、对小鼠脾细胞因子分泌的促进和抑制活性、抗肿瘤细胞HepG2 的生长活性。 以来源姚虻唾液腺的mRNA为材料,我们成功构建了丰度为1x106的姚虻唾液腺 cDNA文库。通过对400个随机克隆的测序,我们得到了编码23种保守蛋白,44种分泌 蛋白和5种功能未知的蛋白。44种分泌蛋白中比较重要的分别是:20种抗原5相关蛋白、 2种α淀粉酶、2种麦芽糖酶、2种attactins抗菌蛋白以及血管舒张肽、过氧化物酶、 抗菌肽、透明质酸酶、mucin样蛋白和脯氨酸丰富蛋白。另外,一些不知道功能的分 泌肽也被发现,这其中包括四个与Hybomitra bimaculata的分泌肽相似性达47-82%的 多肽,这些信息有助于我们发现牛虻唾液腺活性物质和加快从知道部分氨基酸序列的 蛋白的鉴定速度,加快对姚虻从宿主获得血餐的分子机制的诠释速度。 通过分子筛、高压液相色谱等程序,我们从姚虻唾液腺中得到了一个由55 个氨 基酸组成,分子量为6 kDa,含有3 对二硫键的Kunitz 型丝氨基酸蛋白酶抑制剂TYTI。 该抑制剂与Anemonia sulcata 的蛋白酶抑制剂AsKC3 和SA5II 的成熟肽部分的同源 性达66%;并且该抑制剂,对热相对稳定;对凝乳酶、弹性蛋白酶、凝血酶、胰酶等 都有抑制作用,对胰酶的抑制常数为2.586x10-4M 。 通过分子筛、高压液相色谱等程序,我们从姚虻唾液腺中得到了一分子量为7 kDa,由65 个氨基酸组成且含有3 对二硫键的防御素Taymin,它与长角血蜱的防御素的相 似性达43%,但它的第二个半胱氨酸比长角血蜱的半胱氨酸靠前一个氨基酸。该抗菌 肽对大肠杆菌、金黄色葡萄球菌、枯草芽孢杆菌和白色念球菌的最小抑菌浓度分别是: 160、80、140 和120μg/mL。 通过与分离丝氨酸蛋白酶抑制剂相同的生化分离手段,从姚虻唾液腺中得到一种 红细胞凝集素样活性物质TYML1,其能凝集原始和经胰酶、链霉蛋白酶和弹性蛋白酶 处理的A、B、O 和AB 血型的人、兔、绵羊、大鼠、小鼠、鹌鹑的红细胞, 对链霉蛋 白酶处理的鹌鹑红细胞的凝集效价比正常下降了8 倍;对热、酸、碱处理和蛋白酶降 解稳定;具有Ca2+依赖性,活性能为半乳糖胺和胎球蛋白所完全抑制。 通过分子筛、阴离子交换、高压液相色谱等程序,我们从姚虻唾液腺中分离得到 了一分子量为26 kDa,由234 个氨基酸组成,含有10 个半胱氨酸的血小板聚集抑制剂 Macquaritin-2,它与报道的所有血小板聚集抑制剂均不具有同源性,但是与双翅目昆 虫唾液腺过敏原却有一定的同源性(25%-33%),对其血小板聚集抑制活性研究发现:其 能抑制胰酶、花生四烯酸、Stejnulxin、TMVA、ADP、U46619 等激动剂诱导的血小板 聚集;血小板膜结合试验表明:其能与血小板细胞膜结合,故该血小板聚集抑制剂可能 通过作用血小板上的受体来阻止激动剂诱导血小板聚集。 通过分子筛、阳离子交换、高压液相色谱等程序,我们从姚虻唾液腺中分离得到 分子量为24-30 kDa 的两个血小板聚集抑制剂Macquaritin-3 和Macquaritin-1,它 们的N 端16 个氨基酸分别是V N Y C R L P C R G C D Y H V 和 V A V D Y L G L P G R G Y H V。通过PCR, Macquaritin-3 的核苷酸序列被得到,其推导蛋白的成熟区 和信号肽分别含有232 和23 个氨基酸。利用根据Macquaritin-1 的N 端氨基酸设计 的简并引物扩到含有V A V D Y L G L P 序列的两组核苷酸序列。它们与报道的所有 血小板聚集抑制剂均不具有同源性,但是其与双翅目昆虫的唾液腺抗原5 相关蛋白却 有一定的同源性。将所有血小板抑制剂及其相关序列和通过cDNA 文库筛选得到的抗 原5 相关序列进行分析,发现它们有很高的相似性,这种相似性介于33.3%-93.0%间, 且大部分高于50%。另外,两个血小板聚集抑制剂和一个可能的血小板抑制剂分别处 于这些抗原5 相关蛋白进化树的三个簇中。因此,我们推测这些过抗原5 相关蛋白可 能都具有血小板抑制剂活性。

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We put forward a two-terminal valley filter based on a bulk graphene sheet under the modulations of both a local perpendicular magnetic field and a substrate strain. When only one of the two modulations is present, no valley polarization can be generated. A combination of the two modulations leads to a different (but not opposite) shifts of the K and K' valleys, which could be utilized to generate a valley-polarized current. The degree of the valley polarization can be tuned by the strain strength and the inclusion of a scalar potential. The valley polarization changes its polarity as the local magnetic field switches its direction.

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设计并制作了阻塞型和完全无阻塞型4×4热光SOI(silicon-on-insulator)波导开关阵列.开关单元采用了多模干涉耦合器(MMI)-MZI(Mach-Zehnder intederometer)结构的2×2光开关.阻塞型光开关附加损耗为4.8~5.4 dB,串扰为-21.8 dB~-14.5 dB.完全无阻塞型光开关阵列附加损耗为6.6~9.6 dB,串扰为-25.8~-16.8 dB.两者的消光比都在17~25 dB内变化,开关单元功耗小于230 mW.器件的开关时间小于3μs.功耗和开关速度都明显优于SiO_2基和聚合物基的开关阵列.

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Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

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采用分子束外延方法在CaAs(331)A高指数衬底上制备自对齐InAs纳米线(QWRs)或者三维(3D)岛状结构.InAs纳米线(QWRs)选择性生长在CaAs层的台阶边缘.通过原子力显微镜(AfM)仔细研究了InAs纳米微结构的表面形貌,发现不同的生长条件,包括:衬底温度、生长速率、和InAs层厚度等,对InAa表面形貌有很大的影响.如,低温更容易导致线状纳米微结构的形成,而高温更利于3D岛状结构形成.表面形貌的转变归结于表面能同应变能之间的竞争.

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A rearrangeable nonblocking thermo-optic 4×4 switching matrix,which consists of five 2×2 multimode interference-based Mach-Zehnder interferometer(MMI-MZI) switch elements,is designed and fabricated.The minimum and maximum excess loss for the matrix are 6.6 and 10.4dB,respectively.The crosstalk in the matrix is measured to be between -12 and -19.8dB.The switching speed of the matrix is less than 30μs.The power consumption for the single switch element is about 330mW.