Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots

The ground and excited state excitonic transitions of stacked InAs self-organized quantum dots (QDs) in a laser diode structure are studied. The interband absorption transitions of QDs are investigated by non-destructive PV spectra, indicating that the strongest absorption is related to the excited states with a high density and coincides with the photon energy of lasing emission. The temperature and excitation (electric injection) intensity dependences of photoluminescence and electroluminescence indicate the influence of state filling effect on the luminescence of threefold stacked QDs. The results indicate that different coupling channels exist between electronic states in both vertical and lateral directions.

Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate

We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH : H2O2=1 : 10. SEM and PL results show that wafer bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa2 and Ni4N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.

A Raman scattering study of GaAs: As films lifted off GaAs substrate

We performed Raman scattering investigations on low-temperature-grown (LTG) films of GaAs that had been lifted off the GaAs substrate. The Raman measurements unambiguously show the effects of excess arsenic on phonon scattering from LTG films of GaAs. The larger downwards shift of the LO phonon frequency for unannealed free-standing films is explained by invoking the elimination of mismatch strain. The Raman signal due to precipitates of elemental arsenic in the annealed GaAs : As films is determined. It is confirmed that the arsenic clusters formed by rapid thermal annealing are mainly amorphous, giving rise a broad Raman peak in the range 180-260 cm(-1).

Electron irradiation and thermal annealing effect on GaAs solar cells

This paper describes the effect of electron irradiation and thermal annealing on LPE AlGaAs/GaAs heterojunction solar cells with various p/n junction depths. The electron irradiation experiments were performed with energy of 3 MeV, fluences ranging from 1 x 10(14) to 5 x 10(15) e/cm(2). The results obtained demonstrate that the irradiation-induced degradation of performances of the cells is mainly in the short circuit current and could be mostly recovered by annealing at 260 degrees C for 30 min. Four electron traps, E-c - 0.24 eV, E-c - 0.41 eV, E-c - 0.51 eV, E-c - 0.59 eV, were found by DLTS analysis, only two shallow levels of which could be removed by the annealing. (C) 1998 Elsevier Science B.V. All rights reserved.

A Low Power Baseband Chain for CMMB Application

This paper presents experimental results of an analog baseband circuit for China Multimedia Mobile Broadcasting (CMMB) direct conversion receiver in 0.35um SiGe BiCMOS process. It is the first baseband of CMMB RFIC reported so far. A 8(th)-order chebyshev low pass filter (LPF) with calibration system is used in the analog baseband circuit, the filter provides 0.5 dB passband ripple and -35 dB attenuation at 6MHz with the cutoff frequency at 4MHz, the calibration of filter is reported to achieve the bandwidth accuracy of 3%. The baseband variable gain amplifier (VGA) achieves more than 40 dB gain tuning with temperature compensation. In addition, A DC offset cancellation circuit is also introduced to remove the offset from layout and self-mixing, and the remaining offset voltage and current consumption are only 6mV and 412uA respectively. Implemented in a 0.35um SiGe technology with 1.1 mm(2) die size, this tuner baseband achieves OIP3 of 25.5 dBm and dissipate 16.4 mA under 2.8-V supply.

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers

Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers are presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetector was 300 x 300 mu m(2). The dark and illuminated I-V characteristics were measured at reverse biases from 0 V to 30 V at room temperature. The illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 V. The photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. The calculated spectral detectivity D* was shown to be higher than 10(13) cmHz(1/2)/W from 260 to 360 nm with a peak value of 5.9 x 10(13) cmHz(1/2) /W at 310 nm. The peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

NUSH分组密码的线性密码分析

NUSH是NESSIE公布的17个候选分组密码之一.对不同分组长度和密钥规模的NUSH进行了线性密码分析,每一种攻击的复杂度δ由它所需的数据复杂度ε和处理复杂度η组成,记为δ=(ε,η).对于分组长度为64 bit的NUSH,当密钥为128 bit时,3种攻击的复杂度分别为(258,2124)、(260,278)和(262,255);当密钥为192 bit时,3种攻击的复杂度分别为(258,2157)、(260,296)和(262,258);当密钥为256 bit时,3种攻击的复杂度分别为(258,2125)、(260,278)和(262,253).对于分组长度为128 bit的NUSH,当密钥为128bit时,3种攻击的复杂度分别为(2122,295)、(2124,257)和(2126,252);当密钥为192 bit时,3种攻击的复杂度分别为(2122,2142)、(2124,275)和(2126,258);当密钥为256 bit时,3种攻击的复杂度分别为(2122,2168)、(1224,281)和(2126,264).对于分组长度为256 bit的NUSH,当密钥为128 bit时,两种攻击的复杂度分别为(2252,2122)和(2254,2119);当密钥为192 bit时,两种攻击的复杂度分别为(2252,2181)和(2254,2177);当密钥为256 bit时,两种攻击的复杂度分别为(2252,2240)和(2254,2219).这些结果显示NUSH对线性密码分析是不免疫的,而且密钥规模的增大不能保证安全性的提高.

计算机取证的相关法律技术问题研究

法律界研究计算机证据的有关法律特性及其认定,而计算机科学领域的研究人员则从技术的角度研究计算证据的技术特征及其获取技术.由于这一学科是建立在法学和计算机科学之上的交叉学科,必须从这两个学科及其派生学科上体现出的特殊性的角度对其进行研究.在这一领域把法律和技术分离的做法会导致法律认定上的错误和技术上的无序性.通过将法律和计算机技术相结合对计算机取证进行了研究.阐明了计算机取证的相关法律问题,重点研究了计算机取证的技术方法和工具,并给出了一个计算机取证实验的技术过程.提出了目前计算机取证相关法律法规和计算机取证技术的不足,指出了今后法律法规的进一步健全、计算机取证工作的规范化和计算机取证技术的发展趋势.

基于模板匹配和SVM的草图符号自适应识别方法

草图符号的自适应学习中，不同用户的训练样本数量可能不同。保持在不同样本数量下良好的学习效果成为需要解决的一个重要问题．提出一种自适应的草图符号识别方法，该方法采用与训练样本个数相关的分类器组合策略将模板匹配方法和SVM统计分类方法进行了高效组合．它通过利用支持小样本学习的模板匹配方法和支持大量样本学习的SVM方法，并同时利用草图符号中的在线信息和离线信息，实现了不同样本个数下自适应的符号学习和识别．基于该方法，文中设计并实现了支持自适应识别的草图符号组件．最后，利用扩展的PIBGToolkit开发出原型系统IdeaNote．评估表明，该方法可以在24类草图符号分别使用1到20个训练样本时具有较高的识别正确率和较好的时间性能．

城市生活有机垃圾厌氧降解的过程机理与工程应用研究

首先进行城市生活有机垃圾典型组分的厌氧发酵产甲烷和产氢特性研究，在此基础上，设计厌氧发酵联产氢气和甲烷的组合工艺提高能源回收效率，并采用厨余垃圾和废纸联合厌氧消化的方式避免厨余垃圾单独厌氧消化的挥发性脂肪酸抑制。其次，结合国内近年出现的城市生活垃圾分选技术，分别以机械干分选有机垃圾和水分选有机垃圾为原料进行厌氧发酵产甲烷实验，并根据实验结果设计日处理500吨城市生活垃圾厌氧沼气工程及进行经济性评价。主要结论如下：（1）糖和淀粉类的生化产甲烷能力为260 mL/gVS，纤维素，粗纤维、蛋白类和脂类分别为244、145、258 、757 mL/gVS；蛋白质类原料在厌氧消化过程中容易形成“抑制型稳态”；脂类原料容易导致长链脂肪酸抑制。（2）碳水化合物（糖、淀粉和纤维素）是最佳的厌氧发酵制氢原料，蛋白类、脂类和木质纤维类均不适宜作为厌氧发酵制氢原料。采用厌氧发酵联产氢气和甲烷的组合工艺可以显著提高能源回收率。（3）厨余垃圾单独厌氧发酵容易受到VFAs的强烈抑制，采用厨余垃圾与废纸联合厌氧发酵，能够避免VFAs抑制。（4）水分选有机垃圾的生物可降解性优于机械干分选有机垃圾，在原料TS浓度为11%~16%时的甲烷产率为273~314 L/kgVS。（5）国家财政补贴，税收优惠和CDM额外收益决定了城市生活垃圾的厌氧消化与热电肥联产工程的经济可行性。

Design and operation of integrated pilot-scale dimethyl ether synthesis system via pyrolysis/gasification of corncob

The integrated pilot-scale dimethyl ether (DME) synthesis system from corncob was demonstrated for modernizing utilization of biomass residues. The raw bio-syngas was obtained by the pyrolyzer/gasifier at the yield rate of 40-45 Nm(3)/h. The content of tar in the raw bio-syngas was decreased to less than 20 mg/Nm(3) by high temperature gasification of the pyrolysates under O-2-rich air. More than 70% CO2 in the raw bio-syngas was removed by pressure-swing adsorption unit (PSA). The bio-syngas (H-2/CO approximate to 1) was catalytically converted to DME in the fixed-bed tubular reactor directly over Cu/Zn/Al/HZSM-5 catalysts. CO conversion and space-time yield of DME were in the range of 82.0-73.6% and 124.3-203.8 kg/m(cat)(3)/h, respectively, with a similar DME selectivity when gas hourly space velocity (GHSV, volumetric flow rate of syngas at STP divided by the volume of catalyst) increased from 650 h(-1) to 1500 h(-1) at 260 degrees C and 4.3 MPa. And the selectivity to methanol and C-2(+) products was less than 0.65% under typical synthesis condition. The thermal energy conversion efficiency was ca. 32.0% and about 16.4% carbon in dried corncob was essentially converted to DME with the production cost of ca. (sic) 3737/ton DME. Cu (111) was assumed to be the active phase for DME synthesis, confirmed by X-ray diffraction (XRD) characterization.

Modeling of a coal-fired slagging combustor: Development of a slag submodel

In a slagging combustor or furnace, the high combustion temperature makes the molten slag layer cover the wall and capture the particles. If these particles contain combustible matter, they will continue to burn on the running slag. As a result, the total amount of ash deposition will be much greater than that in dry-wall combustors and the total heat flux through the deposition surface will change greatly. Considering the limitations of existing simulation methods for slagging combustion, this paper introduces a new wall burning model and slag flow model from the analysis; of particle deposition phenomena. Combined with a conventional combustion simulation program, the total computational frame is introduced. From comparisons of simulation results from several kinds of methods with experimental data, the conclusion is drawn that the conventional simulation methods are not very suitable for slagging combustion and the wall burning mechanism should be considered more thoroughly.