Natural Convection in a Vertical Channel with Arrays of Flush-Mounted Heaters on Opposite Conductive Walls

Three-dimensional numerical study of natural convection in a vertical channel with flush-mounted discrete heaters on opposite conductive substrate walls is carried out in the present work. Detailed flow and heat transfer characteristics are presented for various Grashof numbers. The heat transfer effects on one wall by the presence of heaters on its opposite wall is examined. It is found that heat transfer rates on one wall are increased by the presence of heaters on its opposite wall. The thermal boundary layers on the opposite walls complement each other for enhanced heat transfer. The effects of spacing between the heated walls, spacings between heaters and substrate conductivity on flow and heat transfer are examined. Existence of optimum spacings between the heated walls for maximum heat transfer and mass flow are observed. It is found that the heat transfer and fluid flow do not follow the same optimum spacings. Mass flow rate reaches maximum value at a wall spacing greater than the spacing for maximum heat transfer. This is because the interaction of thermal boundary layers on individual walls ceases at a lower spacing before the velocity boundary layers separate each other. It is found that increased spacings between heaters reduce individual heater temperatures provided the heaters close to exit on both substrates avail sufficient substrate potions on the exit side. Insufficient substrate portions between the exit heaters and the exit cause abnormal local temperature rise in the exit heaters which are the hottest ones among all the heaters. Optimal heater spacings exist for minimum hottest heater temperature rise. Correlations are presented for dimensionless mass flow rate, temperature maximum, and average Nusselt number.

Electrical Transport Properties of Buckled Carbon Nanotube Arrays

We report on the electrical transport properties of buckled carbon nanotube arrays synthesized by pyrolysis. Analyzing the experimental data based on the general theory of semiconductors, the arrays are predicted to be semiconducting and the band gap can be evaluated. The band gap of different arrays is in 25-50 meV range.

Study of conjugate natural convection between vertical coaxial rectangular cylinders

Laminar natural convection between two coaxial vertical rectangular cylinders is numerically studied in this work. The outer cylinder is connected with vertical rectangular inlet and outlet pipes. The inner cylinder dissipates volumetric heat. The fluid flow and heat transfer characteristics between the cylinders are analyzed in detail for various Grashof numbers. The heat transfer rates on the individual faces of the inner cylinder are reported. The bottom face of the inner cylinder is found to associate with much higher heat rates than those of the other faces. The average Nusselt number on bottom face is more than 2.5 times of the Nusselt number averaged on all the faces. At a given elevation, local Nusselt number on the inner cylinder faces increases towards cylinder edges. The effect of thermal condition of the walls of outer cylinder, inlet and outlet on the natural convection is analyzed. The thermal condition shows strong qualitative and quantitative impact on the fluid flow and heat transfer. The variation of induced flow rate, dimensionless maximum temperature and average Nusselt numbers with Grashof number is studied. Correlations for dimensionless buoyancy-induced mass flow rate and temperature maximum are presented. (c) 2012 Elsevier Ltd. All rights reserved.

Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions

The temperature dependent electrical transport behavior of n-n InGaN/Si heterostructures grown by plasma-assisted MBE was studied. Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using standard Vegard's law. Current density-voltage plots (J-V-T) revealed that the ideality factor (eta) and Schottky barrier height (SBH) (Phi(b)) are temperature dependent and the incorrect values of the Richardson's constant (A**) produced, suggests an inhomogeneous barrier at the heterostructure interface. The higher value of the ideality factor compared to the ideal value and its temperature dependence suggest that the current transport is mainly dominated by thermionic field emission. (C) 2012 Elsevier B.V. All rights reserved.

Electrical properties of buckled multiwalled carbon nanotube arrays in the diffusive regime

We report the geometrical effect of graded buckled multiwalled carbon nanotube arrays on the electrical transport properties in the diffusive regime, via successive breakdown caused by the Joule heating. This breakdown occurs in the straighter region. Empirical relations involving the current-carrying ability, resistance, breakdown power, threshold voltage, diameter and length of carbon nanotube arrays are discussed on the basis of an extensive set of experimental data along with justification. The experimental results are corroborated by the density functional tight-binding calculations of electronic band structure. The band gap decreases as buckleness increases leading to the enhancement in the current-carrying ability and elucidating the role of buckleness in carbon nanotubes. Copyright (c) EPLA, 2012

Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

We present an extensive study on the structural, electrical and optical properties of InN thin films grown on c-Al2O3, GaN(130 nm)/Al2O3, GaN(200 nm)/Al2O3 and GaN(4 mu m)/Al2O3 by using plasma-assisted molecular beam epitaxy. The high resolution X-ray diffraction study reveals better crystalline quality for the film grown on GaN(4 mu m)/Al2O3 as compared to others. The electronic and optical properties seem to be greatly influenced by the structural quality of the films, as can be evidenced from Hall measurement and optical absorption spectroscopy. Kane's k.p model was used to describe the dependence of optical absorption edge of InN films on carrier concentration by considering the non-parabolic dispersion relation for carrier in the conduction band. Room temperature Raman spectra for the InN films grown on GaN show the signature of residual tensile stress in contrast to the compressive stress observed for the films grown directly on c-Al2O3. (C) 2012 Elsevier B.V. All rights reserved.

Mechanical and electrical contact resistance characteristics of a cellular assembly of carbon nanotubes

We employ nanoindentation coupled with electrical contact resistance measurements for simultaneous characterization of the electrical and mechanical behaviors of a cellular assembly of carbon nanotubes (CNTs). Experimental results reveal two different responses that correspond to relatively dense and porous regions of the cellular structure. Distinct nonlinear electron transport characteristics are observed, which mainly originate from diffusive conductance in the CNT structure. In the denser region, differential conductance shows asymmetric minima at lower bias, implying that conductivity mainly results from bulk tunneling. However, the porous regions show insignificant differential conduction as opposed to the denser region.

Electrical transport characteristics of ZnO-Bi2O3-B2O3 glasses

Optically clear glasses in the ZnO-Bi2O3-B2O3 (ZBBO) system were fabricated via the conventional melt-quenching technique. Dielectric constant and loss measurements carried out on ZBBO glasses unraveled nearly frequency (1 kHz-10 MHz)-independent dielectric characteristics associated with significantly low loss (D = 0.004). However, weak temperature response was found with temperature coefficient of dielectric constant 18 +/- 4 ppm A degrees C-1 in the 35-250 A degrees C temperature range. The conduction and relaxation phenomena were rationalized using universal AC conductivity power law and modulus formalism respectively. The activation energy for relaxation determined using imaginary parts of modulus peaks was 2.54 eV which was close to that of the DC conduction implying the involvement of similar energy barriers in both the processes. Stretched and power exponents were temperature dependent. The relaxation and conduction in these glasses were attributed to the hoping and migration of Bi3+ cations in their own and different local environment.

Common Ground Method of Current Injection in Electrical Impedance Tomography

Surface electrodes are essentially required to be switched for boundary data collection in electrical impedance tomography (Ell). Parallel digital data bits are required to operate the multiplexers used, generally, for electrode switching in ELT. More the electrodes in an EIT system more the digital data bits are needed. For a sixteen electrode system. 16 parallel digital data bits are required to operate the multiplexers in opposite or neighbouring current injection method. In this paper a common ground current injection is proposed for EIT and the resistivity imaging is studied. Common ground method needs only two analog multiplexers each of which need only 4 digital data bits and hence only 8 digital bits are required to switch the 16 surface electrodes. Results show that the USB based data acquisition system sequentially generate digital data required for multiplexers operating in common ground current injection method. The profile of the boundary data collected from practical phantom show that the multiplexers are operating in the required sequence in common ground current injection protocol. The voltage peaks obtained for all the inhomogeneity configurations are found at the accurate positions in the boundary data matrix which proved the sequential operation of multiplexers. Resistivity images reconstructed from the boundary data collected from the practical phantom with different configurations also show that the entire digital data generation module is functioning properly. Reconstructed images and their image parameters proved that the boundary data are successfully acquired by the DAQ system which in turn indicates a sequential and proper operation of multiplexers.

A study of vertical cloud structure of the Indian summer monsoon using CloudSat data

Precise specification of the vertical distribution of cloud optical properties is important to reduce the uncertainty in quantifying the radiative impacts of clouds. The new global observations of vertical profiles of clouds from the CloudSat mission provide opportunities to describe cloud structures and to improve parameterization of clouds in the weather and climate prediction models. In this study, four years (2007-2010) of observations of vertical structure of clouds from the CloudSat cloud profiling radar have been used to document the mean vertical structure of clouds associated with the Indian summer monsoon (ISM) and its intra-seasonal variability. Active and break monsoon spells associated with the intra-seasonal variability of ISM have been identified by an objective criterion. For the present analysis, we considered CloudSat derived column integrated cloud liquid and ice water, and vertically profiles of cloud liquid and ice water content. Over the South Asian monsoon region, deep convective clouds with large vertical extent (up to 14 km) and large values of cloud water and ice content are observed over the north Bay of Bengal. Deep clouds with large ice water content are also observed over north Arabian Sea and adjoining northwest India, along the west coast of India and the south equatorial Indian Ocean. The active monsoon spells are characterized by enhanced deep convection over the Bay of Bengal, west coast of India and northeast Arabian Sea and suppressed convection over the equatorial Indian Ocean. Over the Bay of Bengal, cloud liquid water content and ice water content is enhanced by similar to 90 and similar to 200 % respectively during the active spells. An interesting feature associated with the active spell is the vertical tilting structure of positive CLWC and CIWC anomalies over the Arabian Sea and the Bay of Bengal, which suggests a pre-conditioning process for the northward propagation of the boreal summer intra-seasonal variability. It is also observed that during the break spells, clouds are not completely suppressed over central India. Instead, clouds with smaller vertical extent (3-5 km) are observed due to the presence of a heat low type of circulation. The present results will be useful for validating the vertical structure of clouds in weather and climate prediction models.

Impact of chemical treatment on the surface, structure, optical and electrical properties of SnS thin films

The impact of chemical treatment on the surface morphology and other physical properties of tin monosulphide (SnS) thin films have been investigated. The SnS films treated with selected organic solvents exhibited strong improvement in their crystalline-quality and considerable decrease in electrical resistivity. Particularly, the films treated with chloroform showed very low electrical resistivity of similar to 5 Omega cm and a low optical band gap of 1.81 eV as compared to untreated and treated SnS films with other chemicals. From these studies we realized that the chemical treatment of SnS films has strong impact on their surface morphology and also on other physical properties. (C) 2012 Elsevier B.V. All rights reserved.

Electrical switching studies on amorphous Ge‐Te‐Sn thin films

Electrical switching studies on amorphous Ge17Te83−xSnx thin films (1 ≤ x ≤ 4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge17Te83−xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83−xSnx samples, make them suitable candidates for phase change memory applications.

Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating Effect

In this brief, we present a physics-based solution for the temperature-dependent electrical resistance of a suspended metallic single-layer graphene (SLG) sheet under Joule self-heating. The effect of in-plane and flexural phonons on the electron scattering rates for a doped SLG layer has been considered, which particularly demonstrates the variation of the electrical resistance with increasing temperature at different current levels using the solution of the self-heating equation. The present solution agrees well with the available experimental data done with back-gate electrostatic method over a wide range of temperatures.

OTCYMIST: Otsu-Canny minimal spanning tree for born-digital images

Text segmentation and localization algorithms are proposed for the born-digital image dataset. Binarization and edge detection are separately carried out on the three colour planes of the image. Connected components (CC's) obtained from the binarized image are thresholded based on their area and aspect ratio. CC's which contain sufficient edge pixels are retained. A novel approach is presented, where the text components are represented as nodes of a graph. Nodes correspond to the centroids of the individual CC's. Long edges are broken from the minimum spanning tree of the graph. Pair wise height ratio is also used to remove likely non-text components. A new minimum spanning tree is created from the remaining nodes. Horizontal grouping is performed on the CC's to generate bounding boxes of text strings. Overlapping bounding boxes are removed using an overlap area threshold. Non-overlapping and minimally overlapping bounding boxes are used for text segmentation. Vertical splitting is applied to generate bounding boxes at the word level. The proposed method is applied on all the images of the test dataset and values of precision, recall and H-mean are obtained using different approaches.

Electron paramagnetic resonance, magnetic and electrical properties of CoFe2O4 nanoparticles

CoFe2O4 nanoparticles were prepared by solution combustion method. The nanoparticle are characterized by powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy and scanning electron microscopy (SEM). PXRD reveals single phase, cubic spinel structure with Fd (3) over barm (227) space group. SEM micrograph shows the particles are agglomerated and porous in nature. Electron paramagnetic resonance spectrum exhibits a broad resonance signal g=2.150 and is attributed to super exchange between Fe3+ and Co2+. Magnetization values of CoFe2O4 nanoparticle are lower when compared to the literature values of bulk samples. This can be attributed to the surface spin canting due to large surface-to-volume ratio for a nanoscale system. The variation of dielectric constant, dielectric loss, loss tangent and AC conductivity of as-synthesized nano CoFe2O4 particles at room temperature as a function of frequency has been studied. The magnetic and dielectric properties of the samples show that they are suitable for electronic and biomedical applications.