Electrotactile touch surface by using transparent graphene

In this work we present a flexible Electrostatic Tactile (ET) surface/display realized by using new emerging material graphene. The graphene is transparent conductor which successfully replaces previous solution based on indium-thin oxide (ITO) and delivers more reliable solution for flexible and bendable displays. The electrostatic tactile surface is capable of delivering programmable, location specific tactile textures. The ET device has an area of 25 cm 2, and consists of 130 μm thin optically transparent (>76%) and mechanically flexible structure overlaid unobtrusively on top of a display. The ET system exploits electro vibration phenomena to enable on-demand control of the frictional force between the user's fingertip and the device surface. The ET device is integrated through a controller on a mobile display platform to generate fully programmable range of stimulating signals. The ET haptic feedback is formed in accordance with the visual information displayed underneath, with the magnitude and pattern of the frictional force correlated with both the images and the coordinates of the actual touch in real time forming virtual textures on the display surface (haptic virtual silhouette). To quantify rate of change in friction force we performed a dynamic friction coefficient measurement with a system involving an artificial finger mimicking the actual touch. During operation, the dynamic friction between the ET surface and an artificial finger stimulation increases by 26% when the load is 0.8 N and by 24% when the load is 1 N. © 2012 ACM.

Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt

Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes. © 1988-2012 IEEE.

Transparent nanostructured electrode by centrifuge coating

We employ a new solution-based coating process, centrifuge coating, to fabricate nanostructured conductive layers over large areas. This coating procedure allows fast quenching of the metastable dispersed state of nanomaterials, which minimizes material wastes by mitigate the effects of particle re-aggregation. Using this method, we fabricate SWNT coatings on different substrates such as PET (polyethylene terephthalate), PDMS (polydimethylsiloxane), and an acrylic elastomer. The effects of the choice of solvents on the morphology and subsequent performance of the coating network are studied. © 2012 IEEE.

Homogeneous pinhole free 1 nm Al2O3 tunnel barriers on graphene

We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al 2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O2 atmosphere. The Al 2O3 layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al 2O3 by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. © 2012 American Institute of Physics.

流动注射分离-原子吸收光谱法测定底泥中生物可利用态Cr(Ⅵ)和Cr(Ⅲ)

湖泊底泥中生物可利用态铬是对湖泊生态环境最有影响的铬赋存形态,分别用弱有机酸或螯合缓冲剂对底泥中生物可利用态铬进行萃取分离。在流动注射系统中,分别以串联在流路中阴、阳离子交换微型柱分离,NH4NO3+抗坏血酸和H2SO4两种洗脱液同时逆向洗脱,实现了对底泥可利用态铬中Cr(Ⅵ)和Cr(Ⅲ)同时在线分离和原子吸收光谱法测定。交换时间2min,洗脱50s,Cr(Ⅵ)和Cr(Ⅲ)回收率分别为85.4%~94.8%和96.7%~106%。本方法对实际样品中不同价态铬进行测定,铬回收率可达95%。Cr(Ⅵ)和Cr(

Engineering of micro- and nanostructured surfaces with anisotropic geometries and properties

Widespread approaches to fabricate surfaces with robust micro- and nanostructured topographies have been stimulated by opportunities to enhance interface performance by combining physical and chemical effects. In particular, arrays of asymmetric surface features, such as arrays of grooves, inclined pillars, and helical protrusions, have been shown to impart unique anisotropy in properties including wetting, adhesion, thermal and/or electrical conductivity, optical activity, and capability to direct cell growth. These properties are of wide interest for applications including energy conversion, microelectronics, chemical and biological sensing, and bioengineering. However, fabrication of asymmetric surface features often pushes the limits of traditional etching and deposition techniques, making it challenging to produce the desired surfaces in a scalable and cost-effective manner. We review and classify approaches to fabricate arrays of asymmetric 2D and 3D surface features, in polymers, metals, and ceramics. Analytical and empirical relationships among geometries, materials, and surface properties are discussed, especially in the context of the applications mentioned above. Further, opportunities for new fabrication methods that combine lithography with principles of self-assembly are identified, aiming to establish design principles for fabrication of arbitrary 3D surface textures over large areas. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transparent oxide semiconductors for advanced display applications

The article discusses the progress and issues related to transparent oxide semiconductor (TOS) TFTs for advanced display and imaging applications. Amorphous oxide semiconductors continue to spark new technological developments in transparent electronics on a multitude of non-conventional substrates. Applications range from high-frame-rate interactive displays with embedded imaging to flexible electronics, where speed and transparency are essential requirements. TOS TFTs exhibit high transparency as well as high electron mobility even when fabricated at room temperature. Compared to conventional a-Si TFT technology, TOS TFTs have higher mobility and sufficiently good uniformity over large areas, similar in many ways to LTPS TFTs. Moreover, because the amorphous oxide semiconductor has higher mobility compared to that of conventional a-Si TFT technology, this allows higher-frame-rate display operation. This would greatly benefit OLED displays in particular because of the need for lower-cost higher-mobility analog circuits at every subpixel.

Challenges in visible wavelength detection using optically transparent oxide semiconductors

We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (VO) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications. © 2012 IEEE.

How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors

We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.