Preliminary-results of gaas single-crystal growth under high gravity conditions

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

Extremum principle of crystal plasticity

An analytical method for determining slip shear rate under prescribed stress rate or prescribed strain rate has been presented on the basis of the incremental theory of crystal plasticity. The problem has been reduced to a quadric convex programming.In order to analyse the plastic response of crystals subjected to external load, two new extremum principles are proposed. They are equivalent to the boundary-value problem of crystal plasticity. By the new extremum principles, the slip shear rates are independent function which can be obtained from the variational equation.