1000 resultados para Spectroscopie Raman


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Technological progress is determined, to a great extent, by developments in material science. Breakthroughs can happen when a new type of material or new combinations of known materials with different dimensionality and functionality are created. Multilayered structures, being planar or concentric, are now emerging as major players at the forefront of research. Raman spectroscopy is a well-established characterization technique for carbon nanomaterials and is being developed for layered materials. In this issue of ACS Nano, Hirschmann et al. investigate triple-wall carbon nanotubes via resonant Raman spectroscopy, showing how a wealth of information can be derived about these complex structures. The next challenge is to tackle hybrid heterostructures, consisting of different planar or concentric materials, arranged "on demand" to achieve targeted properties.

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Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

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We study by Raman scattering the shear and layer breathing modes in multilayer MoS2. These are identified by polarization measurements and symmetry analysis. Their positions change significantly with the number of layers, with different scaling for odd and even layers. A chain model can explain the results, with general applicability to any layered material, allowing a reliable diagnostic of their thickness. © 2013 American Physical Society.

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We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments. © 2013 American Physical Society.

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We determine the Raman scattering efficiency of the G and 2D peaks in graphene. Three substrates are used: silicon covered with 300 or 90 nm oxide, and calcium fluoride (CaF2). On Si/SiOx, the areas of the G and 2D peak show a strong dependence on the substrate due to interference effects, while on CaF2 no significant dependence is detected. Unintentional doping is reduced by placing graphene on CaF2. We determine the Raman scattering efficiency by comparison with the 322 cm -1 peak area of CaF2. At 2.41 eV, the Raman efficiency of the G peak is ∼200×10-5 m-1Sr-1, and changes with the excitation energy to the power of 4. The 2D Raman efficiency is at least one order of magnitude higher than that of the G peak, with a different excitation energy dependence. © 2013 American Physical Society.

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Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG. © 2013 Elsevier Ltd. All rights reserved.

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We demonstrate a mid-infrared Raman-soliton continuum extending from 1.9 to 3 μm in a highly germanium-doped silica-clad fiber, pumped by a nanotube mode-locked thulium-doped fiber system, delivering 12 kW sub-picosecond pulses at 1.95 μm. This simple and robust source of light covers a portion of the atmospheric transmission window. © 2013 Optical Society of America.

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We demonstrate a Raman-soliton continuum extending from 2 to 3 μm, in a highly germanium-doped silica-clad fiber, pumped by a nanotube mode-locked thulium-doped fiber system delivering 12 kW sub-picosecond pulses at 1.95 μm. © OSA 2013.

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A mode-locked Raman laser, using 25 m of a GeO2 doped fiber as the gain medium, is reported employing carbon nanotubes. The oscillator generates 850 ps chirped pulses, which are externally compressed to 185 ps. © OSA 2012.

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We demonstrate passive mode-locking of a Raman fiber laser using a nanotube-based saturable absorber. The normal dispersion cavity generates highly-chirped 500 ps pulses that are compressed down to 2 ps, with 1.4 kW peak power. © OSA/ CLEO 2011.

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We report the observation of strongly temperature (T)-dependent spectral lines in electronic Raman-scattering spectra of graphite in a high magnetic field up to 45 T applied along the c axis. The magnetic field quantizes the in-plane motion, while the out-of-plane motion remains free, effectively reducing the system dimension from 3 to 1. Optically created electron-hole pairs interact with, or shake up, the one-dimensional Fermi sea in the lowest Landau subbands. Based on the Tomonaga-Luttinger liquid theory, we show that interaction effects modify the spectral line shape from (ω-Δ)-1/2 to (ω-Δ)2α-1/2 at T = 0. At finite T, we predict a thermal broadening factor that increases linearly with T. Our model reproduces the observed T-dependent line shape, determining the electron-electron interaction parameter α to be ∼0.05 at 40 T. © 2014 American Physical Society.