Thermo and photoluminescence properties of Eu3+ activated hexagonal, monoclinic and cubic gadolinium oxide nanorods

Different phases of Eu3+ activated gadolinium oxide (Gd (OH)(3), GdOOH and Gd2O3) nanorods have been prepared by the hydrothermal method with and without cityl trimethyl ammonium bromide (GAB) surfactant. Cubic Gd2O3:Eu (8 mol%) red phosphor has been prepared by the dehydration of corresponding hydroxide Gd(OH)(3):Eu after calcinations at 350 and 600 degrees C for 3 h, respectively. When Eu3+ ions were introduced into Gd(OH)(3), lattice sites which replace the original Gd3+ ions, a strong red emission centered at 613 nm has been observed upon UV illumination, due to the intrinsic Eu3+ transition between D-5(0) and F-7 configurations. Thermoluminescence glow curves of Gd (OH)(3): Eu and Gd2O3:Eu phosphors have been recorded by irradiating with gamma source ((CO)-C-60) in the dose range 10-60 Gy at a heating rate of 6.7 degrees C sec(-1). Well resolved glow peaks in the range 42-45, 67-76,95-103 and 102-125 degrees C were observed. When gamma-irradiation dose increased to 40 Gy, the glow peaks were reduced and with increase in gamma-dose (50 and 60 Gy) results the shift in first two glow peak temperatures at about 20 degrees C and a new shouldered peak at 86 degrees C was observed. It is observed that there is a shift in glow peak temperatures and variation in intensity, which is mainly attributed to different phases of gadolinium oxide. The trapping parameters namely activation energy (E), order of kinetics (b) and frequency factor were calculated using peak shape and the results are discussed. (C) 2010 Elsevier B.V. All rights reserved.

SCF and electron correlation studies on structure, force constants and vibrational spectra of borane monoammoniate complex

Effects of basis set and electron correlation on the equilibrium geometry, force constants and vibrational spectra of BH3NH3 have been studied. A series of basis sets ranging from double zeta to triple zeta including polarization and diffuse functions have been utilized. All the SCF based calculations overestimate the dative B-N bond distance and considerable improvement occurs when the treatment for electron correlation is introduced. Detailed vibrational analysis for BH3NH3 has been carried out. The mean absolute percentage deviation of the ab initio predicted vibration frequencies of (BH3NH3)-B-11 from the experiment is about 10% for the SCF based calculations and the MP2 method shows better agreement, the overall deviation being 5-6%. The ground state effective force constants of BH3NH3 were obtained using RECOVES procedure. The RECOVES sets of force constants are found to be highly satisfactory for the prediction of the vibrational frequencies of different isotopomers of BH3NH3. The mean absolute percentage deviation of the calculated frequencies of different isotopomers from the experiment is much less than 1%. The RECOVES-MP2/augDZP set of force constants was found to be the best set among the different sets for this molecule. Theoretical infrared intensities are in fair agreement with the observed spectral features.

Time-Resolved Photoluminescence and Microwave Conductivity at Semiconductor Electrodes: Depletion Layer Effects

Analytical expressions which include depletion layer effects on low-injection carrier relaxation are being presented for the first time here. Starting from the continuity equation for the minority carriers, we derive expressions for the output signal pertinent to time-resolved microwave and luminescence experiments. These are valid for the time domain that usually overlaps with the time scales of surface processes, such as charge transfer and trapping. Apart from the usual pulse form of illumination, theoretical expressions pertaining to other forms of illumination such as switch-on and switch-off transient modes, a periodic mode, and a steady state and their various inter-relationships are derived here. The expressions obtained are seen to be generalizations of existing flat-band low-injection results in the Limit of early or initial band bendings. The importance of the depletion layer as an experimental parameter is clearly seen in the limit of larger band bendings wherein it is shown, unlike the flat-band case, to exhibit pure exponential forms of carrier relaxation. Our results are consistent with the main conclusions of the numerical and experimental work published recently. Furthermore, this work provides the actual functional relationships between the applied potential and observed carrier decay. This should enable one to extract the surface kinetic parameters, after deciding on the dominant mode of carrier relaxation at the interface, whether charge transfer or trapping, by studying the potential dependence of the fate of relaxation.

Temperature-dependent valence-band photoemission spectra of La1-xSrxMnO3

We have studied the temperature dependence of the photoemission spectra of La1-xSrxMnO3 (x=0.0, 0.2, and 0.4) and found that the spectral line shape dramatically changes in the entire valence-band region, particularly for x=0.2 and 0.4. By contrast, the spectra of La0.6Sr0.4CoO3 show no significant temperature dependence. From comparison between the temperature-and composition-(x) dependent spectral changes and the temperature-composition phase diagram of La1-xSrxMnO3, we suggest that the changes are related to the degree of hole localization on oxygen p orbitals, which is influenced by electron-lattice coupling and magnetic correlations.

Zn incorporation and band gap shrinkage in p-type GaAs

Dimethylzine (DMZn) was used as a p-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium and arsine (AsH3) as source materials, The hole carrier concentrations and zinc (Zn) incorporation efficiency are studied by using the Hall effect, electrochemical capacitance voltage profiler and photoluminescence (PL) spectroscopy, The influence of growth parameters such as DMZn mole fraction, growth temperature, and AsH, mole fraction on the Zn incorporation have been studied. The hole concentration increases with increasing DMZn and AsH3 mole fraction and decreases with increasing growth temperature. This can be explained by vacancy control model. The PL experiments were carried out as a function of hole concentration (10(17)-1.5 x 10(20) cm(-3)). The main peak shifted to lower energy and the full width at half maximum (FWHM) increases with increasing hole concentrations. We have obtained an empirical relation for FWHM of PL, Delta E(p)(eV) = 1.15 x 10(-8)p(1/3). We also obtained an empirical relation for the band gap shrinkage, Delta E-g in Zn doped GaAs as a function of hole concentration. The value of Delta E-g(eV) = -2.75 x 10(-8)p(1/3), indicates a significant band gap shrinkage at high doping levels, These relations are considered to provide a useful tool to determine the hole concentration in Zn doped GaAs by low temperature PL measurement. The hole concentration increases with increasing AsH3 mole fraction and the main peak is shifted to a lower energy side. This can be explained also by the vacancy control model. As the hole concentration is increased above 3.8 x 10(18) cm(-3), a shoulder peak separated from the main peak was observed in the PL spectra and disappears at higher concentrations. (C) 1997 American Institute of Physics.

Muon-spin rotation spectra in the mixed phase of high-T-c superconductors: Thermal fluctuations and disorder effects

We study muon-spin rotation (mu SR) spectra in the mixed phase of highly anisotropic layered superconductors, specifically Bi2+xSr2-xCaCu2O8+delta (BSCCO), by modeling the fluid and solid phases of pancake Vortices using liquid-state and density functional methods. The role of thermal fluctuations in causing motional narrowing of mu SR line shapes is quantified in terms of a first-principles theory of the flux-lattice melting transition. The effects of random point pinning are investigated using a replica treatment of liquid-state correlations and a replicated density functional theory. Our results indicate that motional narrowing in the pure system, although substantial, cannot account for the remarkably small linewidths obtained experimentally at relatively high fields and low temperatures. We find that satisfactory agreement with the mu SR data for BSCCO in this regime can be obtained through the ansatz that this ''phase'' is characterized by frozen short-range positional correlations reflecting the structure of the liquid just above the melting transition. This proposal is consistent with recent suggestions of a ''pinned liquid'' or ''glassy'' state of pancake Vortices in the presence of pinning disorder. Our results for the high-temperature liquid phase indicate that measurable linewidths may be obtained in this phase as a consequence of density inhomogeneities induced by the pinning disorder. The results presented here comprise a unified, first-principles theoretical treatment of mu SR spectra in highly anisotropic layered superconductors in terms of a controlled set of approximations. [S0163-1829(99)08033-9].

Photophysics of PPV derivatives with varying conjugation lengths

Photoluminescence (PL), electroluminescence (EL) and photoconductivity (PC) of poly[(2,5-dimethoxy-p-phenylene) vinylene] (DMPPV) of varying conjugation length were studied. Thin film devices of the DMPPV with different conjugation lengths, as the active medium, were prepared. The PL emission spectra revealed the radiative decay of the singlet excitons with peak values corresponding to energies below the absorption onset. The PL. emission spectra of the copolymer films also revealed vibronic features, which get well resolved upon cooling to 80K, The devices exhibit light emitting diode (LED) behavior; the I-V curves and EL spectra are compared in these DMPPV samples having different conjugation lengths. The PC studies reveal subtle features, which can be attributed to the optically generated excitations in the system.

Ab initio studies of solvent effect on conformational equilibria and vibrational spectra of dipropionamide

Systematic ab initio molecular orbital studies of the conformational equilibria and vibrational spectra of dipropionamide using the basis sets 6-31g(d) and 6-31++G(d,p) have been carried out. The vibrational spectra of dipropionamide have been satisfactorily interpreted taking into account the agreement between the calculated frequencies, infrared and Raman band intensities and the shifts in the spectra of deuterated molecules with those observed. The previous assignments of most of the vibrational bands are well confirmed, a few bands need reassignment, however. The solvent effects were investigated by self-consistent reaction field theory using dipole and self-consistent isodensity polarized continuum model methods. The introduction of a dielectric medium has only a marginal effect on the conformational equilibria and vibrational spectra. However, the calculated changes in geometry and vibrational spectra on going from the gas phase to the solution phase are in accord with the increasing weight of the dipolar resonance structure in polar solvents. (C) 2002 Elsevier Science B.V. All rights reserved.

Excited state structure and dynamics of p-benzoquinone and bromanil from time-resolved resonance Raman spectra and simulation

p-Benzoquinone and its halogen substituted derivatives are known to have differing reactivities in the triplet excited state. While bromanil catalyzes the reduction of octaethylporphyrin most efficiently among the halogenated p-benzoquinones, the reaction does not take place in presence of the unsubstituted p-benzoquinone (T. Nakano and Y. Mori, Bull. Chem. Soc. Jpn., 67, 2627 (1994)). Understanding of such differences requires a detailed knowledge of the triplet state structures, normal mode compositions and excited state dynamics. In this paper, we apply a recently presented scheme (M. Puranik, S. Umapathy, J. G. Snijders, and J. Chandrasekhar, J. Chem, Phys., 115, 6106 (2001)) that combines parameters from experiment and computation in a wave packet dynamics simulation to the triplet states of p-benzoquinone and bromanil. The absorption and resonance Raman spectra of both the molecules have been simulated. The normal mode compositions and mode specific excited state displacements have been presented and compared. Time-dependent evolution of the absorption and Raman overlaps for all the observed modes has been discussed in detail. In p-benzoquinone, the initial dynamics is along the C=C stretching and C-H bending modes whereas in bromanil nearly equal displacements are observed along all the stretching coordinates.

Optimization of off-oriented Ge substrates for MOVPE-grown GaAs solar cells

GaAs/Ge heterostructures having abrupt interfaces were grown on 2degrees, 6degrees, and 9degrees off-cut Ge substrates and investigated by cross-sectional high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy, photoluminescence spectroscopy and electrochemical capacitance voltage (ECV) profiler. The GaAs films were grown on off-oriented Ge substrates with growth temperature in the range of 600-700degreesC, growth rate of 3-12 mum/hr and a V/III ratio of 29-88. The lattice indexing of HRTEM exhibits an excellent lattice line matching between GaAs and Ge substrate. The PL spectra from GaAs layer on 6degrees off-cut Ge substrate shows the higher excitonic peak compared with 2degrees and 9degrees off-cut Ge substrates. In addition, the luminescence intensity from the GaAs solar cell grown on 6degrees off-cut is higher than on 9degrees off-cut Ge substrates and signifies the potential use of 6degrees off-cut Ge substrate in the GaAs solar cells industry. The ECV profiling shows an abrupt film/substrate interface as well as between various layers of the solar cell structures.

Simulation of the infrared spectra of thioacetamide by the extended molecular mechanics method

The infrared spectrum of the matrix-isolated species of thioacetamide has been simulated using the extended molecular mechanics method. The equilibrium structure, vibrational frequencies, dipole moment and infrared absorption intensities of thioacetamide have been calculated in good agreement with the experiment. The vibrational frequencies and infrared absorption intensities for the isotopic molecules (CH2CSNH2)-C-13, (CH3CSNH2)-N-15 and (CH2CSND2)-C-13 have also been calculated consistent with the experiment. The infrared spectra of the matrix isolated species of N- and C- deuterated isotopomers of thioacetamide, CH3CSND2 and CD3CSNH2 have also been simulated in satisfactory agreement with the experimental spectra.

PL due to Discrete Gap Levels in Some Chalcogenide Glasses- A Configurational Coordinate Diagram Illustration

Photoluminescence (PL) studies were carried out on a-Se and a few Ge20Se80−xBix and Ge20Se70−xBixTe10 bulk glassy semiconductors at 4.2 K with Ar+ laser as excitation source. While a-Se and samples with lesser at% of Bi show fine structured PL with a large Stokes shift, samples with higher at% of Bi did not show any detectable PL. The investigations show at least three radiative recombination transitions. Features extracted by deconvoluting the experimental spectra show that the discrete gap levels associated with the inherent coordination defects are involved in the PL transitions. Absence of PL in samples with higher Bi at% are explained on the basis of nonradiative transition mechanisms. Overall PL mechanism involving gap levels in chalcogenide glasses is illustrated with the help of a configurational coordinate diagram.

Hydrogen Passivation of Shallow Dopants in InP Studied by Photoluminescence Spectroscopy

The effect of hydrogenation on the photoluminescence (PL) of InP : Mg, InP : Zn and undoped n-InP is presented. An increase in the near band edge pl intensity due to passivation of non-radiative centers was observed in all the samples. A donor - acceptor pair transition was observed before hydrogenation in the InP : Mg sample and after hydrogenation in the InP : Zn sample due to the acceptor deactivation. In n-InP the enhancement of donor bound exciton after hydrogenation points to the absence of donor passivation.

Indium Nitride Nanometric-Objects on c-Sapphire Grown by Plasma-Assisted Molecular Beam Epitaxy

The indium nitride (InN)-based nanometric-objects were grown directly on a c-sapphire substrate by using plasma-assisted molecular beam epitaxy (PAMBE) at different substrate temperatures. High resolution X-ray diffraction (HRXRD) reveals the InN (0002) reflection and full width at half maximum (FWHM) found to be decreased with increasing the growth temperature. The size, height and density of the grown nanometric-objects studied by scanning electron microscopy (SEM) has remarkable differences, evidencing the decisive role of substrate temperature. Photoluminescence (PL) studies revealed that the emission energy is shifted towards the higher side from the bulk value, i.e., a blue shift in the PL spectra was observed. The temperature dependence of the PL peak position shows an ``S-shaped'' emission energy shift, which can be attributed to the localization of carriers in the nanometric-objects.

Photoluminescence of Sr(2-x)Ln(x)CeO(4+x/2) (Ln = Eu, Sm or Yb) prepared by a wet chemical method

A wet chemical route is developed for the preparation of Sr2CeO4 denoted the carbonate-gel composite technique. This involves the coprecipitation of strontium as fine particles of carbonates within hydrated gels of ceria (CeO2.xH(2)O, 40photoluminescence (PL) observed for Sr2CeO4 originates from the Ce4+-O2- charge-transfer (CT) transition resulting from the interaction of Ce4+ ion with the neighboring oxide ions. The effect of next-nearest-neighbor (NNN) environment on the Ce4+-O2- CT emission is studied by doping with Eu3+, Sm3+ or Yb3+ which in turn, have unique charge-transfer associated energy levels in the excited states in oxides. Efficient energy transfer occurs from Ce4+-O2- CT state to trivalent lanthanide ions (Ln(3+)) if the latter has CT excited states, leading to sensitizer-activator relation, through non-resonance process involving exchange interaction. Yb3+-substituted Sr2CeO4 does not show any line emission because the energy of Yb3+-O2- CT level is higher than that of the Ce4+-O2- CT level. Sr2-xEuxCeO4+x/2 shows white emission at xless than or equal to0.02 because of the dominant intensities of D-5(2)-F-7(0-3) transitions in blue-green region whereas the intensities of D-5(0)-F-7(0-3) transitions in orange-red regions dominate at concentrations xgreater than or equal to0.03 and give red emission. The appearance of all the emissions from D-5(2), D-5(1) and D-5(0) excited states to the F-7(0-3) ground multiplets of Eu3+ is explained on the basis of the shift from the hypersensitive electric-dipole to magnetic-dipole related transitions with the variation in site symmetry with increasing concentration of Eu3+. White emission of Sr2-x SmxCeO4+x/2 at xless than or equal to0.02 is due the co-existence of Ce4+-O2- CT emission and (4)G(4)(5/2)-H-6(J) Sm3+ transitions whereas only the Sm3+ red emission prevails for xgreater than or equal to0.03. The above unique changes in PL emission features are explained in terms of the changes in NNN environments of Ce4+. Quenching of Ce4+-O2- CT emission by other Ln(3+) is due to the ground state crossover arising out of the NNN interactions.