Spin ladders and quantum simulators for Tomonaga–Luttinger liquids

Magnetic insulators have proven to be usable as quantum simulators for itinerant interacting quantum systems. In particular the compound (C5H12N)2CuBr4 (for short: (Hpip)2CuBr4) was shown to be a remarkable realization of a Tomonaga–Luttinger liquid (TLL) and allowed us to quantitatively test the TLL theory. Substitution weakly disorders this class of compounds and thus allows us to use them to tackle questions pertaining to the effect of disorder in TLL as well, such as that of the formation of the Bose glass. In this paper we present, as a first step in this direction, a study of the properties of the related (Hpip)2CuCl4 compound. We determine the exchange couplings and compute the temperature and magnetic field dependence of the specific heat, using a finite temperature density matrix renormalization group procedure. Comparison with the measured specific heat at zero magnetic field confirms the exchange parameters and Hamiltonian for the (Hpip)2CuCl4 compound, giving the basis needed to begin studying the disorder effects.

Polaronic metal state at the LaAlO₃/SrTiO₃ interface

Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 that hosts a two-dimensional electron system. Apart from the mobile charge carriers, this system exhibits a range of intriguing properties such as field effect, superconductivity and ferromagnetism, whose fundamental origins are still debated. Here we use soft-X-ray angle-resolved photoelectron spectroscopy to penetrate through the LaAlO3 overlayer and access charge carriers at the buried interface. The experimental spectral function directly identifies the interface charge carriers as large polarons, emerging from coupling of charge and lattice degrees of freedom, and involving two phonons of different energy and thermal activity. This phenomenon fundamentally limits the carrier mobility and explains its puzzling drop at high temperatures.

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

Experimental verification of intermediate band formation on titanium-implanted silicon

Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28?eV below the conduction band for implantation doses in the range 1013-1014 at./cm2. For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n+/n junction.

Six not so easy pieces in intermediate band solar cell research

The concept of "intermediate band solar cell" (IBSC) is, apparently, simple to grasp. However, since the idea was proposed, our understanding has improved and we feel now that we can explain better some concepts than we initially introduced. Clarifying these concepts is important, even if they are well-known for the advanced researcher, so that efforts can be driven in the right direction from start. The six pieces of this work are: Does a miniband need to be formed when the IBSC is implemented with quantum dots?; What are the problems of each of the main practical approaches that exist today? What are the simplest experimental techniques to demonstrate whether an IBSC is working as such or not? What is the issue with the absorption coefficient overlap? and Mott's transition? What the best system would be, if any?

Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements show that Ti supersaturated Si presents spectral response orders of magnitude higher than unimplanted Si at energies below the band gap. We conclude that the observed below band gap photoconductivity cannot be attributed to structural defects produced by the fabrication processes and suggest that both absorption coefficient of the new material and lifetime of photoexcited carriers have been enhanced due to the presence of a high Ti concentration. This remarkable result proves that Ti supersaturated Si is a promising material for both infrared detectors and high efficiency photovoltaic devices.

Diseño de una vivienda unifamiliar con instalación geotérmica de muy baja entalpía

El objetivo del presente proyecto es el diseño de una vivienda unifamiliar de manera que el aporte de energía no renovable sea el mínimo para conseguir las condiciones de confort óptimas para los ocupantes durante todo el año. Para su diseño se tendrá en cuenta el aporte de energía solar pasiva y el uso de aislantes térmicos a lo largo de la envolvente para la reducción de las necesidades de energía. Se dimensiona una instalación geotérmica para el abastecimiento de calefacción, refrigeración y agua caliente sanitaria (ACS). En este dimensionamiento se incluyen los sondeos geotérmicos, el equipo de bomba de calor y la instalación de suelo radiante. En el estudio de iluminación se analizan las necesidades de alumbrado de la vivienda utilizando luminarias led. Por último se evalúa la viabilidad económica que supone sustituir una instalación de caldera de gasoil por la instalación geotérmica dimensionada y la viabilidad de sustituir luminarias incandescentes por luminarias led. ABSTRACT The purpose of this paper is the design of a single family home with the lowest nonrenewable energy input, so optimum comfort living conditions for the occupants during the whole year can be reached. In order to design the house, both passive solar energy input and the use of thermal insulators will be taken into account. A geothermal installation for the heating, cooling and Domestic Hot Water (DHC) supply will be measured. In this measuring, the boreholls, the heat pump equipment and the radiant floor heating installation are included. In the study of illumination of the house, the lighting needs using LED luminaires are analised. Finally, the economic viability when replacing the installation of a diesel boiler for the measured geothermal installation is assessed, as well as the viability when replacing incandescent luminaires for LED luminaires

O PSC E A NOÇÃO DE “FAMÍLIA TRADICIONAL” COMO IDENTIDADE PARTIDÁRIA E RELIGIOSA: ANÁLISE DO PROCESSO ELEITORAL DE 2014

A presente dissertação analisa como o Partido Social Cristão (PSC), ao longo do tempo, se apropriou da identidade religiosa de seus atores políticos que na sua maioria são membros da Frente Parlamentar Evangélica, os quais defendem no espaço público a “família tradicional”, em detrimento da pluralidade de arranjos familiares na contemporaneidade. Para explicitar o objeto - “família tradicional” e PSC -, foi necessário retroceder no tempo e investigar na historiografia os primórdios da inserção dos evangélicos na política brasileira. Em vista disso, analisamos a participação dos evangélicos nos respectivos períodos do Brasil: Colônia, Império e República. A dificuldade da entrada de evangélicos na política partidária, dentre outros fatores, se deve àinfluência do catolicismo no Estado. Assim sendo, averiguamos em todas as Constituições (1824, 1891, 1934, 1937, 1946, 1967, 1969 e 1988) o que a mesma diz no que tange a proibição e a liberdade religiosa no país. Logo, verificamos entre as Eras Vargas e República Populista, que ocorreu com intensidade a transição do apoliticismo para o politicismo entre os evangélicos brasileiros, porém, eles não recebiam o apoio formal de suas igrejas. Em seguida, a participação dos evangélicos na arena política durante a ditadura militar foi investigada com destaque para o posicionamento de vanguarda da IECLB, através do Manifesto de Curitiba e, também com a presença de parlamentares evangélicos no Congresso Nacional. A politização pentecostal é ressaltada em nosso trabalho, através do pioneirismo de Manoel de Mello e, depois na Redemocratização quando as instituições evangélicas se organizaram para eleger seus candidatos à Assembleia Nacional Constituinte. E, com o fim do regime militar, o PSC surge como partido “nanico”, contudo, deixa o anonimato e ganha visibilidade midiática quando o pastor e deputado, Marco Feliciano, assume a presidência da Comissão de Direitos Humanos e Minorias, em 2013. Esse é o pano de fundo histórico que projetou o PSC e seus atores no pleito de 2014 com o mote “família tradicional”.

Positional enhancer-blocking activity of the chicken β-globin insulator in transiently transfected cells

It is thought that insulators demarcate transcriptionally and structurally independent chromatin domains. Insulators are detected by their ability to block enhancer–promoter interactions in a directional manner, and protect a transgene from position effects. Most studies are performed in stably transformed cells or organisms. Here we analyze the enhancer-blocking activity of the chicken β-globin insulator in transient transfection experiments in both erythroid and nonerythroid cell lines. We show that four tandem copies of a 90-bp fragment of this insulator were able to block an enhancer in these experiments. In circular plasmids, placement on either side of the enhancer reduced activity, but when the plasmid was linearized, the enhancer-blocking activity was observed only when the insulator was placed between the promoter and the enhancer. These observations are consistent with the position-dependent enhancer-blocking activity of the insulator observed in stable transformation experiments.

Genetic and molecular analysis of the gypsy chromatin insulator of Drosophila.

Boundary or insulator elements set up independent territories of gene activity by establishing higher order domains of chromatin structure. The gypsy retrotransposon of Drosophila contains an insulator element that represses enhancer-promoter interactions and is responsible for the mutant phenotypes caused by insertion of this element. The gypsy insulator inhibits the interaction of promoter-distal enhancers with the transcription complex without affecting the functionality of promoter-proximal enhancers; in addition, these sequences can buffer a transgene from chromosomal position effects. Two proteins have been identified that bind gypsy insulator sequences and are responsible for their effects on transcription. The suppressor of Hairy-wing [su(Hw)] protein affects enhancer function both upstream and downstream of its binding site by causing a silencing effect similar to that of heterochromatin. The modifier of mdg4 [mod(mdg4)] protein interacts with su(Hw) to transform this bi-directional repression into the polar effect characteristic of insulators. These effects seem to be modulated by changes in chromatin structure.

The solution structure of the Raf-1 cysteine-rich domain: a novel ras and phospholipid binding site.

The Raf-1 protein kinase is the best-characterized downstream effector of activated Ras. Interaction with Ras leads to Raf-1 activation and results in transduction of cell growth and differentiation signals. The details of Raf-1 activation are unclear, but our characterization of a second Ras-binding site in the cysteine-rich domain (CRD) and the involvement of both Ras-binding sites in effective Raf-1-mediated transformation provides insight into the molecular aspects and consequences of Ras-Raf interactions. The Raf-1 CRD is a member of an emerging family of domains, many of which are found within signal transducing proteins. Several contain binding sites for diacylglycerol (or phorbol esters) and phosphatidylserine and are believed to play a role in membrane translocation and enzyme activation. The CRD from Raf-1 does not bind diacylglycerol but interacts with Ras and phosphatidylserine. To investigate the ligand-binding specificities associated with CRDs, we have determined the solution structure of the Raf-1 CRD using heteronuclear multidimensional NMR. We show that there are differences between this structure and the structures of two related domains from protein kinase C (PKC). The differences are confined to regions of the CRDs involved in binding phorbol ester in the PKC domains. Since phosphatidylserine is a common ligand, we expect its binding site to be located in regions where the structures of the Raf-1 and PKC domains are similar. The structure of the Raf-1 CRD represents an example of this family of domains that does not bind diacylglycerol and provides a framework for investigating its interactions with other molecules.

Efficient high-resolution genetic mapping of mouse interspersed repetitive sequence PCR products, toward integrated genetic and physical mapping of the mouse genome.

The ability to carry out high-resolution genetic mapping at high throughput in the mouse is a critical rate-limiting step in the generation of genetically anchored contigs in physical mapping projects and the mapping of genetic loci for complex traits. To address this need, we have developed an efficient, high-resolution, large-scale genome mapping system. This system is based on the identification of polymorphic DNA sites between mouse strains by using interspersed repetitive sequence (IRS) PCR. Individual cloned IRS PCR products are hybridized to a DNA array of IRS PCR products derived from the DNA of individual mice segregating DNA sequences from the two parent strains. Since gel electrophoresis is not required, large numbers of samples can be genotyped in parallel. By using this approach, we have mapped > 450 polymorphic probes with filters containing the DNA of up to 517 backcross mice, potentially allowing resolution of 0.14 centimorgan. This approach also carries the potential for a high degree of efficiency in the integration of physical and genetic maps, since pooled DNAs representing libraries of yeast artificial chromosomes or other physical representations of the mouse genome can be addressed by hybridization of filter representations of the IRS PCR products of such libraries.

Spontaneous persistent currents in a quantum spin Hall insulator

We present a mechanism for persistent charge current. Quantum spin Hall insulators hold dissipationless spin currents in their edges so that, for a given spin orientation, a net charge current flows which is exactly compensated by the counterflow of the opposite spin. Here we show that ferromagnetic order in the edge upgrades the spin currents into persistent charge currents without applied fields. For that matter, we study the Hubbard model including Haldane-Kane-Mele spin-orbit coupling in a zigzag ribbon and consider the case of graphene. We find three electronic phases with magnetic edges that carry currents reaching 0.4 nA, comparable to persistent currents in metallic rings, for the small spin-orbit coupling in graphene. One of the phases is a valley half metal.