The structure and electrochemical characteristics of La0.67Mg0.33 (Ni0.8Co0.1Mn0.1)(x) (x=2.5-5.0) multiphase alloys for nickel-metal hydride batteries

This paper presents results concerning structure and electrochemical characteristics of the La0.67Mg0.33 (Ni0.8Co0.1Mn0.1) (x) (x=2.5-5.0) alloy. It can be found from the result of the Rietveld analyses that the structures of the alloys change obviously with increasing x from 2.5 to 5.0. The main phase of the alloys with x=2.5-3.5 is LaMg2Ni9 phase with a PuNi3-type rhombohedral structure, but the main phase of the alloys with x=4.0-5.0 is LaNi(5)phase with a CaCu5-type hexagonal structure. Furthermore, the phase ratio, lattice parameter and cell volume of the LaMg2Ni9 phase and the LaNi5 phase change with increasing x. The electrochemical studies show that the maximum discharge capacity increases from 214.7 mAh/g (x=2.5) to 391.1 mAh/g (x=3.5) and then decreases to 238.5 mAh/g (x=5.0). As the discharge current density is 1,200 mA/g, the high rate dischargeability (HRD) increases from 51.1% (x=2.5) to 83.7% (x=3.5) and then decreases to 71.6% (x=5.0). Moreover, the exchange current density (I-0) of the alloy electrodes first increases and then decrease with increasing x from 2.5 to 5.0, which is consistent with the variation of the HRD. The cell volume reduces with increasing x in the alloys, which is detrimental to hydrogen diffusion and accordingly decreases the low-temperature dischargeability of the alloy electrodes.

Structures and electrochemical characteristics of several kinds of alloys

The structures and the electrochemical characteristics of La0.7-xCexMg0.3Ni2.8Co0.5 (x = 0.1-0.5) alloy, Ti0.25-xZrxV0.35Cr0.1Ni0.3 (x = 0.05-0.15) alloy and AB(3

Preparation of W-Al alloys by mechanical alloying

W1-xAlx (x=0-0.86) alloys were synthesized by mechanically alloying the pure metal powder mixtures at designated compositions by conventional high-energy ball milling. The W-Al alloys were stable under high pressure and high temperature. The alloys were lighter than W. The hardness and oxidation resistance of the alloys was greatly improved compared to both W and Al. (C) 2002 Elsevier Science B.V. All rights reserved.

Electrochemical characteristic of LaNi-based hydrogen storage alloys

Effect of purity of alloy components on the electrode performance of LaNi2 alloys was investigated. The results showed the purity of components had less effect on discharge capacity and self-discharge of LaNi2 alloys. Partial substitution of Al or Mn for Ni greatly improved discharge properties of LaNi2-xAlx, or LaNi2-yMny alloys as negative electrodes in MFl-Ni battery, 0.15less than or equal toxless than or equal to0.25; 0.15less than or equal toyless than or equal to0.25. In addition, surface treatment of LaNi1.8Al0.2 alloy electrode was performed by polymerizing cis-butenedioate with Co-60- gamma -ray radiation, which. had better affect on self-discharge and cycle life of the alloy electrodes at low temperature(-28 C-degrees).

Binary alloys of nylon 1010 and ethylene-propylene copolymer: Chemical, morphological, and mechanical analysis

The modification of ethylene-propylene copolymer (EPM) has been accomplished by melt grafting of maleic anhydride (MAH) molecules promoted by radical initiators. The resulting EPM-g-MAH and EPM have been used to obtain binary nylon 1010/EPM or nylon 1010/EPM-g-MAH blends by melt mixing. It was found that the EPM-g-MAH copolymer used as the second component has a profound effect upon the properties of the resulting blends. This behavior has been attributed to a series of chemical and physicochemical interactions taking place between the two components. The interactions are due to the presence of the anhydride functionality on the copolymer and do not occur when this functionality is absent. The interaction has been confirmed by Fourier-transform infrared spectroscopy, differential scanning calorimetry, dynamic mechanical analysis, and scanning electron microscopic.

Theory of the electronic and optical properties of dilute bismide alloys

Dilute bismide alloys, containing small fractions of bismuth (Bi), have recently attracted interest due to their potential for applications in a range of semiconductor devices. Experiments have revealed that dilute bismide alloys such as GaBixAs1−x, in which a small fraction x of the atoms in the III-V semiconductor GaAs are replaced by Bi, exhibit a number of unusual and unique properties. For example, the band gap energy (E g) decreases rapidly with increasing Bi composition x, by up to 90 meV per % Bi replacing As in the alloy. This band gap reduction is accompanied by a strong increase in the spin-orbit-splitting energy (ΔSO) with increasing x, and both E g and ΔSO are characterised by strong, composition-dependent bowing. The existence of a ΔSO > E g regime in the GaBixAs1−x alloy has been demonstrated for x ≳10%, a band structure condition which is promising for the development of highly efficient, temperature stable semiconductor lasers that could lead to large energy savings in future optical communication networks. In addition to their potential for specific applications, dilute bismide alloys have also attracted interest from a fundamental perspective due to their unique properties. In this thesis we develop the theory of the electronic and optical properties of dilute bismide alloys. By adopting a multi-scale approach encompassing atomistic calculations of the electronic structure using the semi-empirical tight-binding method, as well as continuum calculations based on the k•p method, we develop a fundamental understanding of this unusual class of semiconductor alloys and identify general material properties which are promising for applications in semiconductor optoelectronic and photovoltaic devices. By performing detailed supercell calculations on both ordered and disordered alloys we explicitly demonstrate that Bi atoms act as isovalent impurities when incorporated in dilute quantities in III-V (In)GaAs(P) materials, strongly perturbing the electronic structure of the valence band. We identify and quantify the causes and consequences of the unusual electronic properties of GaBixAs1−x and related alloys, and our analysis is reinforced throughout by a series of detailed comparisons to the results of experimental measurements. Our k•p models of the band structure of GaBixAs1−x and related alloys, which we derive directly from detailed atomistic calculations, are ideally suited to the study of dilute bismide-based devices. We focus in the latter part of the thesis on calculations of the electronic and optical properties of dilute bismide quantum well lasers. In addition to developing an understanding of the effects of Bi incorporation on the operational characteristics of semiconductor lasers, we also present calculations which have been used explicitly in designing and optimising the first generation of GaBixAs1−x-based devices.

Nanosize effect in germanium nanowire growth with binary metal alloys

This article describes feasible and improved ways towards enhanced nanowire growth kinetics by reducing the equilibrium solute concentration in the liquid collector phase in a vapor-liquid-solid (VLS) like growth model. Use of bi-metallic alloy seeds (AuxAg1-x) influences the germanium supersaturation for a faster nucleation and growth kinetics. Nanowire growth with ternary eutectic alloys shows Gibbs-Thompson effect with diameter dependent growth rate. In-situ transmission electron microscopy (TEM) annealing experiments directly confirms the role of equilibrium concentration in nanowire growth kinetics and was used to correlate the equilibrium content of metastable alloys with the growth kinetics of Ge nanowires. The shape and geometry of the heterogeneous interfaces between the liquid eutectic and solid Ge nanowires were found to vary as a function of nanowire diameter and eutectic alloy composition.

Macro-segregation of multi-component alloys in shape casting simulation

The objective of this work is to present a new scheme for temperature-solute coupling in a solidification model, where the temperature and concentration fields simultaneously satisfy the macro-scale transport equations and, in the mushy region, meet the constraints imposed by the thermodynamics and the local scale processes. A step-by-step explanation of the macrosegregation algorithm, implemented in the finite volume unstructured mesh multi-physics modelling code PHYSICA, is initially presented and then the proposed scheme is validated against experimental results obtained by Krane for binary and a ternary alloys.

Modeling the diffusion of solid copper into liquid solder alloys

During the soldering process, the copper atoms diffuse into liquid solders. The diffusion process determines integrity and the reworking possibility of a solder joint. In order to capture the diffusion scenarios of solid copper into liquid Sn–Pb and Sn–Cu solders, a computer modeling has been performed for 10 s. An analytical model has also been proposed for calculating the diffusion coefficient of copper into liquid solders. It is found that the diffusion coefficient for Sn–Pb solder is 2.74 × 10− 10 m2/s and for Sn–Cu solder is 6.44 × 10−9 m2/s. The modeling results reveal that the diffusion coefficient is one of the major factors that govern the rate at which solid Cu dissolve in the molten solder. The predicted dissolved amounts of copper into solders have been validated with the help of scanning electron microscopic analysis.