Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.

Fe/Nb多层膜中离子辐照效应研究(英文)

采用磁控溅射技术在Si衬底上沉积Si/[Fe(10 nm)/Nb(4 nm)/Fe(4 nm)/Nb(4 nm)]2/ [Fe(4nm)/Nb(4 nm)]4多层膜。用2 MeV的Xe离子在室温下辐照多层膜。采用俄歇深度剖析、X射线衍射和振动样品磁强计分析辐照引起的多层膜元素分布、结构及磁性变化。AES深度剖析谱显示当辐照注量达到1 .0×1014ions/cm2时,多层膜界面两侧元素开始混合;当辐照注量达到2 .0×1016ions/cm2时,多层膜层状结构消失,Fe层与Nb层几乎完全混合。XRD谱显示,当辐照注量达到1 .0×1014ions/cm2时, Nb的衍射峰和Fe的各衍射峰的峰位相对于标准卡片向小角方向偏移,这说明辐照引起Nb基和Fe基FeNb固溶体相的形成;当辐照注量大于1 .0×1015ions/cm2时,辐照引起非晶相的出现。VSM测试显示,多层膜的磁性随着结构的变化而变化。在此实验基础上,对离子辐照引起界面混合现象的机理进行了探讨。

不同剂量率X射线辐照对小鼠免疫系统的影响

目的检测经相同剂量不同剂量率X射线照射的BalB/C小鼠外周血淋巴细胞周期及胸腺和脾脏指数。方法18只BalB/c小鼠随机分为对照组(control),低剂量率照射组(20cGy/min)和高剂量率照射组(300cGy/min),每组6只。低剂量组和高剂量组采用剂量率分别为20cGy/min和300cGy/min的1GyX射线对小鼠进行全身照射,24h后取血及器官,用流式细胞仪检测外周血淋巴细胞的周期变化,用称量的方法得到胸腺和脾脏指数。结果高剂量率辐射时,小鼠外周血淋巴细胞的损伤较低剂量时大,而且对雄性鼠的影响大于雌性;同时,胸腺和脾脏指数变化也随着剂量率的增大而减小。结论低剂量率的照射对小鼠外周血淋巴细胞、胸腺和脾脏的影响较高剂量率辐射小;雌性鼠的辐射耐受能力较雄性强。

用培养基介导法研究辐射旁效应及其机理

目的通过受照射的细胞培养液培养靶细胞,并用二甲基亚砜(DMSO)对靶细胞预处理,检测其对自然杀伤(NK)细胞活性的影响,研究旁效应是否存在及其产生机理。方法以健康雄性ICR小鼠脾NK细胞活性检测经过不同剂量照射的细胞培养液对小鼠淋巴瘤YacⅠ细胞的损伤程度,同时观察DMSO对该细胞的保护作用,即对旁效应的抑制作用。结果应用不同剂量60Coγ射线照射的细胞培养液来培养YacⅠ细胞,引发该细胞不同程度的损伤,表现在YacⅠ细胞对小鼠脾NK细胞的敏感性增强(P<0.01);DMSO预处理细胞对旁效应有一定的抑制作用,特别在0.25和0.5Gy组,对细胞的保护作用明显。结论60Coγ射线照射能诱发YacⅠ细胞的培养液介导的旁效应。活性氧(ROS)是诱发辐射旁效应的因素之一,清除ROS可部分抑制辐射旁效应。