Validity ranges of interfacial wave theories in a two-layer fluid system

In the present paper, we endeavor to accomplish a diagram, which demarcates the validity ranges for interfacial wave theories in a two-layer system, to meet the needs of design in ocean engineering. On the basis of the available solutions of periodic and solitary waves, we propose a guideline as principle to identify the validity regions of the interfacial wave theories in terms of wave period T, wave height H, upper layer thickness d(1), and lower layer thickness d(2), instead of only one parameter-water depth d as in the water surface wave circumstance. The diagram proposed here happens to be Le Mehautes plot for free surface waves if water depth ratio r = d(1)/d(2) approaches to infinity and the upper layer water density rho(1) to zero. On the contrary, the diagram for water surface waves can be used for two-layer interfacial waves if gravity acceleration g in it is replaced by the reduced gravity defined in this study under the condition of sigma = (rho(2) - rho(1))/rho(2) -> 1.0 and r > 1.0. In the end, several figures of the validity ranges for various interfacial wave theories in the two-layer fluid are given and compared with the results for surface waves.

Finite element analysis on stresses field of normalized layer thickness within ceramic coating on aluminized steel

Multilayer ceramic coatings were fabricated on steel substrate using a combined technique of hot dipping aluminum(HDA) and plasma electrolytic oxidation(PEO). A triangle of normalized layer thickness was created for describing thickness ratios of HDA/PEO coatings. Then, the effect of thickness ratio on stresses field of HDA/PEO coatings subjected to uniform normal contact load was investigated by finite element method. Results show that the surface tensile stress is mainly affected by the thickness ratio of Al layer when the total thickness of coating is unchanged. With the increase of A] layer thickness, the surface tensile stress rises quickly. When Al2O3 layer thickness increases, surface tensile stress is diminished. 'Meanwhile, the maximum shear stress moves rapidly towards internal part of HDA/PEO coatings. Shear stress at the Al2O3/Al interface is minimal when Al2O3 layer and Al layer have the same thickness.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.