Electrical properties of highly conducting Sno2:Sb nanocrystals synthesized using a nonaqueous sol gel method

This work describes the synthesis of highly conducting antimony-doped tin oxide (ATO) nanocrystals prepared via a nonaqueous sol–gel route in the size range of 4–6 nm and provides insights into its electrical properties. The antimony composition was varied from 1 to 18 mol% and the lowest resistivity (4.0 × 10−4Ω·cm) was observed at room temperature in the SnO2:8.8 mol% Sb composition. The samples were evaluated by X-ray diffraction, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and scanning electron microscope, and resistivity measurements were taken in the four-probe mode in the temperature range of 13–300 K. The results show highly crystalline nanoparticles in a monodisperse colloidal system, dependence on the shape of ATO nanoparticles as a function of Sb distribution, low resistivity, and semiconductor–metal transition.

Synthesis and preliminary characterization of Poly(Propylene)Imine hexadecylamine dendrimer (DAB-Am-16) modified with methyl acrylate

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Obtenção e caracterização de nanoestruturas puras e dopadas a base de 'TI''O'IND.2' para a aplicação em fotocatálise

Pós-graduação em Química - IQ

Análise e expressão de genes de PKS II e de carboidrases provenientes de bibliotecas metagenômicas

Pós-graduação em Microbiologia Agropecuária - FCAV

Biodessulfurização do biogás gerado no processo de digestão anaeróbia da estação de tratamento de efluentes de uma indústria cervejeira

Pós-graduação em Química - IQ

Desenvolvimento e validação de um novo protocolo para ciclagem térmica de materiais dentários

Pós-graduação em Odontologia Restauradora - ICT

Reologia de fluidos envolvidos no processo de obtenção de bioetanol

Pós-graduação em Engenharia e Ciência de Alimentos - IBILCE

Vinhaça da indústria sucroalcooleira como matéria-prima a carbonização hidrotérmica

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Reproduction and recruitment of the seabob shrimp: a threatened exploitation species in southeastern of Brazil

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Correlation between structural and catalytic properties of copper supported on porous alumina for the ethanol dehydrogenation reaction

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Thermal degradation and lifetime estimation of poly(ether imide)/carbon fiber composites

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Studies on structural, morphological and electrical properties of Ce1-xErxO2-delta (x=0.05-0.20) as solid electrolyte for IT - SOFC

A series of four different powders ceria doped Ce1-xErxO2-delta (0.05 <= x <= 0.20) were synthesized by applying self-propagating reaction at room temperature (SPRT method). SPRT procedure is based on the self-propagating room temperature reaction between metal nitrates and sodium hydroxide, wherein the reaction is spontaneous and terminates extremely fast. The method is known to assure very precise stoichiometry of the final product in comparison with a tailored composition. XRPD, Raman spectroscopy, TEM and BET measurements were used to characterize the nanopowders at room temperature. It was shown that all obtained powders were single phase solid solutions with a fluorite-type crystal structure and all powder particles have nanometric size (about 3-4 nm). Densification was performed at 1550 degrees C, in an air atmosphere for 2 h. XRPD, SEM and complex impedance method measurements were carried out on sintered samples. Single phase form was evidenced for each sintered materials. The best value of conductivity at 700 degrees C amounted to 1.10 x 10(-2) Omega(-1) cm(-1) for Ce0.85Er0.O-3(2-delta) sample. Corresponding activation energies of conductivity amounted to 0.28 eV in the temperature range 500-700 degrees C. (C) 2015 Elsevier B.V. All rights reserved.

Morphological study of nitrides of NbTi (50:50, by weight) alloy

Plates of NbTi (50:50, by weight) were nitrided in a nitrogen atmosphere in the temperature range 800-1000 °C for 15, 30, 60, 120 and 180 min. X-Ray diffraction and optical and electronic microscopy were used to characterize the samples. Two nitride layers were identified on the substrate: an external and continuous phase of TiN, named δ, and a deeper and discontinuous phase of Ti 2N, named ε{lunate}. The electron micrographs reveal the presence of paths rich in Nb which may be responsible for the diffusion of nitrogen into the matrix. © 1993.

IR-visible upconversion and thermal effects in Pr3+/Yb3+-codoped Ga2O3 : La2S3 chalcogenide glasses

IR-visible upconversion fluorescence spectroscopy and thermal effects in pr(3+)/Yb3+-codoped Ga2O3:La2S3 chalcogenide glasses excited at 1.064 mum is reported. Intense visible upconversion emission in the wavelength region of 480-680 nm peaked around 500, 550, 620 and 660 nm is observed. Upconversion excitation of the Pr3+ excited-state visible emitting levels is achieved by st combination of phonon-assisted absorption, energy-transfer and phonon-assisted excited-state absorption processes. A threefold upconversion emission enhancement induced by thermal effects when the codoped sample was heated in the temperature range of 20-200 degreesC is demonstrated. The thermal-induced enhancement is attributed to a multiphonon-assisted anti-Stokes process which takes place in the excitation of the ytterbium and excited-state absorption of the praseodymium. The thermal effect is modelled by conventional rate equations considering temperature-dependent effective absorption cross-sections for the F-2(7/2)-F-2(5/2) ytterbium transition and (1)G(4)-P-3(0) praseadymium excited-state absorption, and it is shown to agree very well with experimental results. Frequency upconversion in singly Pr3+-doped samples pumped at 836 nm and 1.064 mum in a two-beam configuration is also examined.

Metodologia de simulação numérica do comportamento térmico em equipamentos eletroeletrônicos

Pós-graduação em Engenharia Elétrica - FEIS