Post-earnings announcement drift no mercado de ações brasileiro

Este trabalho busca testar a eficiência do mercado de ações brasileiro através da identificação da existência de post-earnings announcement drift, fenômeno já bastante estudado e reproduzido no mercado norte-americano. Segundo a literatura existente a respeito do assunto, a informação contida na divulgação de resultados de uma firma é relevante para a formação de preço de suas ações. Além disso, os retornos anormais acumulados de ações de firmas que divulgam resultados com “surpresas positivas” possuem tendência positiva por algum tempo após a divulgação do resultado. Por outro lado, os retornos anormais acumulados de ações de empresas que divulgam resultados com “surpresas negativas” possuem tendência negativa por algum tempo após a divulgação do resultado. A identificação de post-earnings announcement drift no mercado acionário brasileiro pode ser de grande utilidade para a estruturação de estratégias de arbitragem e gestão de portfólios. Após uma revisão teórica, o resultado é apresentado e se mostra parcialmente consistente com a literatura existente.

Effects of Silicon and Drought Stress on Tuber Yield and Leaf Biochemical Characteristics in Potato

Silicon has beneficial effects on many crops, mainly under biotic and abiotic stresses. Silicon can affect biochemical, physiological, and photosynthetic processes and, consequently, alleviates drought stress. However, the effects of Si on potato (Solanum tuberosum L.) plants under drought stress are still unknown. The objective of this study was to evaluate the effect of Si supply on some biochemical characteristics and yield of potato tubers, either exposed or not exposed to drought stress. The experiment was conducted in pots containing 50 dm(3) of a Typic Acrortox soil (33% clay, 4% silt, and 63% sand). The treatments consisted of the absence or presence of Si application (0 and 284.4 mg dm(-3)), through soil amelioration with dolomitic lime and Ca and Mg silicate, and in the absence or presence of water deficit (-0.020 MPa and -0.050 MPa soil water potential, respectively), with eight replications. Silicon application and water deficit resulted in the greatest Si concentration in potato leaves. Proline concentrations increased under lower water availability and higher Si availability in the soil, which indicates that Si may be associated with plant osmotic adjustment. Water deficit and Si application decreased total sugars and soluble proteins concentrations in the leaves. Silicon application reduced stalk lodging and increased mean tuber weight and, consequently, tuber yield, especially in the absence of water stress.

Nitrogen and silicon fertilization of upland rice

O silício não é considerado um elemento essencial para o crescimento e desenvolvimento das plantas, entretanto, sua absorção traz inúmeros benefícios, principalmente ao arroz, como aumento da espessura da parede celular, conferindo resistência mecânica a penetração de fungos, melhora o ângulo de abertura das folhas tornando-as mais eretas, diminuindo o auto-sombreamento e aumentando a resistência ao acamamento, especialmente sob altas doses de nitrogênio. O presente trabalho teve por objetivo avaliar os efeitos da adubação nitrogenada e silicatada nos componentes vegetativos, nos componentes da produção, na altura da planta e na produtividade da cultivar de arroz IAC 202. O experimento foi constituído da combinação de três doses de nitrogênio (5, 75 e 150 mg de N kg-1 de solo) aplicado na forma de uréia e quatro doses de silício (0, 200, 400 e 600 mg de SiO2 kg-1 de solo), aplicado na forma de silicato de cálcio. O delineamento experimental utilizado foi o inteiramente casualizado em esquema fatorial 3 ´ 4 (N = 5). A adubação nitrogenada aumentou o número de colmos e panículas por metro quadrado e o número total de espiguetas, refletindo na produtividade de grãos. O perfilhamento excessivo causado pela adubação nitrogenada inadequada causou redução na porcentagem de colmos férteis, na fertilidade das espiguetas e da massa de grãos. A adubação silicatada reduziu o número de espiguetas chochas por panícula e aumentou a massa de grãos sem, contudo, refletir na produtividade de grãos.

Silicon leaf application and physiological quality of white oat and wheat seeds

Plant nutrition can positively influence quality of seeds by improving plant tolerance to adverse climate. In this context, silicon is currently considered a micronutrient and it is beneficial to plant growth, especially Poaceaes such as white oat and wheat, thereby improving physiological quality of seeds. This study had the objective of evaluating the effects of silicon leaf application on plant tillering, silicon levels and physiological quality of white oat and wheat seeds besides establishing correlations between them. Two experiments were carried out in winter with white oat and wheat. The experimental design was the completely randomized block with eight replications. Treatments consisted of foliar application of silicon (0.8% of soluble silicon, as stabilized orthosilicic acid) and a control (with no application). Silicon levels in leaves were determined at flowering whereas the number of plants and panicles/spikes per area was counted right before harvest. Seed quality was evaluated right after harvest through mass, germination and vigor tests. Data was submitted to variance analysis and means were compared by the Tukey test at a probability level of 5%. Person's linear correlation test was performed among silicon level in plants, tillering and seed quality data. Silicon leaf application increases root and total length of white oat seedlings as an effect of higher Si level in leaves. Silicon leaf application increases mass of wheat seeds without affecting germination or vigor.

Seed germination and seedling development of white oat affected by silicon and phosphorus fertilization

Os fertilizantes silicatados tem sido cada vez mais usados na agricultura devido a inúmeros benefícios, tais como correção da acidez de solos tropicais e efeitos positivos no desenvolvimento de gramíneas. A disponibilidade de nutrientes e a nutrição de plantas desempenham papel importante na produção de sementes e podem influenciar a qualidade fisiológica de sementes de aveia-branca (Avena sativa L.). Avaliou-se a germinação de sementes e o desenvolvimento de plântulas de aveia-branca em função da adubação com silício e fósforo. O delineamento experimental foi inteiramente casualizado, em esquema fatorial 2 x 4, com seis repetições. Os tratamentos consistiram de 20 e 200 mg dm-3 de P2O5, aplicados na forma de superfosfato triplo, combinados com 0, 150, 300 e 450 mg dm-3 de Si na forma de silicato de potássio. O experimento foi realizado em casa de vegetação, conduzindo-se sete plantas por vaso, com capacidade para 15 L de terra. As panículas foram colhidas e debulhadas manualmente e, as sementes, armazenadas em sacos de papel em condições normais de ambiente. As sementes foram avaliadas quanto ao teor de água, massa de sementes, germinação, condutividade elétrica, comprimento e massa da matéria seca de plântulas. Sementes de aveia-branca com qualidade superior são produzidas com 20 mg dm-3 de P2O5, independente da dose de Si. Sementes com maior germinação e vigor são obtidas com 300 e 450 mg dm-3 de K2SiO3, respectivamente. Os comprimentos da raiz e total das plântulas foram inferiores nas doses de Si até 300 kg ha-1, porém a dose de fósforo somente afetou o desenvolvimento das plântulas de maneira distinta quando aplicada junto com a maior dose de silício.

Silicon carbide surface modification by nitrogen plasma expander

Silicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement.

Cutting forces in turning of gray cast iron using silicon nitride based cutting tool

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Digital radiography using digital detector arrays fulfills critical applications for offshore pipelines

Digital radiography in the inspection of welded pipes to be installed under deep water offshore gas and oil pipelines, like a presalt in Brazil, in the paper has been investigated. The aim is to use digital radiography for nondestructive testing of welds as it is already in use in the medical, aerospace, security, automotive, and petrochemical sectors. Among the current options, the DDA (Digital Detector Array) is considered as one of the best solutions to replace industrial films, as well as to increase the sensitivity to reduce the inspection cycle time. This paper shows the results of this new technique, comparing it to radiography with industrial films systems. In this paper, 20 test specimens of longitudinal welded pipe joints, specially prepared with artificial defects like cracks, lack of fusion, lack of penetration, and porosities and slag inclusions with varying dimensions and in 06 different base metal wall thicknesses, were tested and a comparison of the techniques was made. These experiments verified the purposed rules for parameter definitions and selections to control the required digital radiographic image quality as described in the draft international standard ISO/DIS 10893-7. This draft is first standard establishing the parameters for digital radiography on weld seam of welded steel pipes for pressure purposes to be used on gas and oil pipelines.

Use of lithium niobate detector for measuring X-ray intensity in mammographic range

A detector system that can measure X-ray intensity in the mammographic range of 22 to 36 kVp (equivalent photon energies ofthe beam between 11 and 15 keV) is presented. It consists of a lithium mobate detector and a high-sensitivity current-to-voltage converter.

Search for the rare decay B-s(0)->phi mu(+)mu(-) with the D0 detector

We present a search for the flavor-changing neutral current decay B-s(0)->phi mu(+)mu(-) using about 0.45 fb(-1) of data collected in p (p) over bar collisions at root s=1.96 TeV with the D0 detector at the Fermilab Tevatron Collider. We find an upper limit on the branching ratio of this decay normalized to B-s(0)-> J/psi phi of B(B-s(0)->phi mu(+)mu(-))/B(B-s(0)-> J/psi phi)< 4.4x10(-3) at the 95% C.L. Using the central value of the world average branching fraction of B-s(0)-> J/psi phi, the limit corresponds to B(B-s(0)->phi mu(+)mu(-))< 4.1x10(-6) at the 95% C.L., the most stringent upper bound to date.

Search for a heavy resonance decaying into a Z plus jet final state in p(p)over-bar collisions at root s=1.96 TeV using the D0 detector

We have searched for a heavy resonance decaying into a Z+jet final state in p (p) over bar collisions at a center of mass energy of 1.96 TeV at the Fermilab Tevatron collider using the D0 detector. No indication for such a resonance was found in a data sample corresponding to an integrated luminosity of 370 pb(-1). We set upper limits on the cross section times branching fraction for heavy resonance production at the 95% C.L. as a function of the resonance mass and width. The limits are interpreted within the framework of a specific model of excited quark production.