Study on the properties of piezoelectric materials and manganese-based oxide perovskites /

Perovskite type piezoelectric and manganese oxide materials have gained a lot of attention in the field of device engineering. Lead zirconium titananium oxide (PbZri.iTiiOa or PZT) is a piezoelectric material widely used as sensors and actuators. Miniaturization of PZTbased devices will not only perfect many existing products, but also opens doors to new applications. Lanthanum manganese oxides Lai-iAiMnOa (A-divalent alkaline earth such as Sr, Ca or Ba) have been intensively studied for their colossal magnetoresistance (CMR) properties that make them applicable in memory cells, magnetic and pressure sensors. In this study, we fabricate PZT and LSMO(LCMO) heterostructures on SrTiOa substrates and investigate their temperature dependency of resistivity and magnetization as a function of the thickness of LSMO(LCMO) layer. The microstructure of the samples is analysed through TEM. In another set of samples, we study the effect of application of an electric field across the PZT layer that acts as an external pressure on the manganite layer. This verifies the correlation of lattice distortion with transport and magnetic properties of the CMR materials.

Molecular mechanics calculations of tin-bis (triphenylphosphine oxide) complexes

The capability of molecular mechanics for modeling the wide distribution of bond angles and bond lengths characteristic of coordination complexes was investigatecl. This was the preliminary step for future modeling of solvent extraction. Several tin-phosphine oxide COrnI)le:){es were selected as the test groUl) for t.he d,esired range of geometry they eX!libi ted as \-vell as the ligands they cOD.tained r Wllich were c\f interest in connection with solvation. A variety of adjustments were made to Allinger's M:M2 force·-field ill order to inl.prove its performance in the treatment of these systems. A set of u,nique force constants was introduced for' those terms representing the metal ligand bond lengths, bond angles, and, torsion angles. These were significantly smaller than trad.itionallY used. with organic compounds. The ~1orse poteIlt.ial energ'Y function was incorporated for the M-X l')ond lE~ngths and the cosine harmonic potential erlerg-y function was invoked for the MOP bond angle. These functions were found to accomodate the wide distribution of observed values better than the traditional harmonic approximations~ Crystal packing influences on the MOP angle were explored thr"ollgh ttle inclusion of the isolated molecule withil1 a shell cc)ntaini11g tl1e nearest neigl1'bors duri.rlg energy rninimization experiments~ This was found to further improve the fit of the MOP angle.

Molecular mechanics calculations on some phosphine oxide metal complexes in aqueous and organic solvents

Molecular mechanics calculations were done on tetrahedral phosphine oxide zinc complexes in simulated water, benzene and hexane phases using the DREIDING II force field in the BIOGRAF molecular modeling program. The SUN workstation computer (SUN_ 4c, with SPARK station 1 processor) was used for the calculations. Experimental structural information used in the parameterization was obtained from the September 1989 version of the Cambridge Structural Database. 2 Steric and solvation energies were calculated for complexes of the type ZnCl2 (RlO)2' The calculations were done with and without inclusion of electrostatic interactions. More reliable simulation results were obtained without inclusion of charges. In the simulated gas phase, the steric energies increase regularly with number of carbons in the alkyl group, whereas they go through a maximum when solvent shells are included in the calculation. Simulated distribution ratios vary with chain length and type of chain branching and the complexes are found to be more favourable for extraction by benzene than by hexane, in accord with experimental data. Also, in line with what would be expected for a favorable extraction, calculations without electrostatics predict that the complexes are better solvated by the organic solvents than by water.

Endothelin-1 in osteoarthritic chondrocytes triggers nitric oxide production and upregulates collagenase production

Affiliation: Florina Moldovan: Faculté de médecine dentaire, Université de Montréal & CHU Hôpital Sainte-Justine, Université de Montréal. Christina Alexandra Manacu, Marjolaine Roy-Beaudry, Fazool Shipkolye : CHU Hôpital Sainte-Justine, Université de Montréal. Johanne Martel-Pelletier & Jean-Pierre Pelletier : CHUM Hôpital Notre-Dame, Université de Montréal.

Endothelin-1 and H2O2-induced signaling in vascular smooth muscle cells : modulation by CaMKII and Nitric oxide

L’endothéline-1 (ET-1) est un peptide vasoactif extrêmement puissant qui possède une forte activité mitogénique dans les cellules du muscle lisse vasculaire (VSMCs). Il a été démontré que l’ET-1 est impliquée dans plusieurs maladies cardio-vasculaires, comme l’athérosclérose, l'hypertension, la resténose après l'angioplastie, l’insuffisance cardiaque et l'arythmie. L’ET-1 exerce ses effets via plusieurs voies de signalisation qui incluent le Ca2+, les protéines kinases activées par les mitogènes (MAPKs) y compris les kinases régulées par les signaux extracellulaires (ERK1/2) et la voie de la phosphatidylinositol 3-kinase (PI-3K)/protein kinase B (PKB). Plusieurs études ont démontré que les dérivés réactifs de l'oxygène (ROS) peuvent jouer un rôle important dans la signalisation d’ERK1/2 et de PKB induite par plusieurs facteurs de croissance et hormones. Nous avons précédemment montré que l'ET-1 produit des ROS qui agissent comme médiateur de la signalisation cellulaire induite par l’ET-1. Le peroxyde d’hydrogène (H2O2), une molécule qui appartient à la famille des ROS, peut activer les voies de la MAPK et de la PKB dans les VSMCs. Par ailleurs, nos résultats suggèrent également que le Ca2+ et la calmoduline (CaM) sont essentiels pour la phosphorylation d’ERK1/2, de p38 et de PKB induite par le H2O2 dans les VSMCs. La Ca2+/CaM-dependent protein kinases II (CaMKII) est une sérine/thréonine protéine kinase multifonctionnelle activée par le Ca2+/CaM. Il a été montré que la CaMKII est impliquée dans les voies de signalisation induite par le H2O2 dans les cellules endothéliales. Cependant, le rôle de la CaMKII dans la phosphorylation d’ERK1/2, de PKB et de la proline-rich tyrosine kinase 2 (Pyk2) induite par l’ET-1 et le H2O2, de même que son rôle dans l’effet hypertrophique et prolifératif de l’ET-1 dans les VSMCs demeure inexploré. Le monoxyde d’azote (NO) est une molécule vasoactive impliquée dans la régulation de plusieurs réponses hormonales. Le NO peut moduler la signalisation contrôlant la croissance cellulaire induite par plusieurs agonistes d’où son rôle protecteur dans le système vasculaire. Des études ont montré que le NO peut inhiber la voie de Ras/Raf/ERK1/2 et la voie de PKB induite par le facteur de croissance endothélial (EGF) et l’angiotensine II (Ang II). Beaucoup d’autres travaux ont mis en évidence un cross-talk entre les voies de signalisation activées par l’ET-1 et le NO. La capacité du NO à inhiber la signalisation intracellulaire induite par l’ET-1 dans les VSMCs demeure inconnue. Le travail présenté dans cette thèse vise à déterminer le rôle du système Ca2+-CaM-CaMKII dans la phosphorylation d’ERK1/2, de PKB et de Pyk2 induite par l’ET-1 et le H2O2 ainsi que son rôle dans la croissance et la prolifération cellulaire induites par l’ET-1 dans les VSMCs. Nous avons également testé le rôle du NO dans la phosphorylation d’ERK1/2, de PKB et de Pyk2 ainsi que la synthèse protéique induite par l’ET-1. Dans la première partie de notre étude, nous avons examiné le rôle de la CaMKII dans la phosphorylation d’ERK1/2 et de PKB induite par l’ET-1 dans les VSMCs en utilisant trois approches différentes i.e. l'usage d'inhibiteurs pharmacologiques, un peptide auto-inhibiteur de la CaMKII (CaMKII AIP) et la technique de siRNA. Nous avons démontré que la CaMKII est impliquée dans la phosphorylation d’ERK1/2 et de PKB induite par l’ET-1 dans les VSMCs. Des études précédentes ont montré à l’aide d’inhibiteurs pharmacologiques comme le KN-93 que l'Ang II et les agents induisant une augmentation de la concentration en Ca2+ intracellulaire comme l’ionomycine, provoquent la phosphorylation d’ERK1/2 via la CaM dans les VSMCs. Cependant, en utilisant différentes approches, nos études ont montré pour la première fois une implication de la CaMKII dans la phosphorylation d’ERK1/2 et de PKB induite par l’ET-1 dans les VSMCs. Nous avons également rapporté pour la première fois, un rôle crucial de la CaMKII dans la pathophysiologie vasculaire associée à l’ET-1 puisque l’activation de la CaMKII joue un rôle important dans l’hypertrophie et la croissance cellulaire. Dans la deuxième partie, à la lumière des études précédentes qui montraient que les ROS agissent comme médiateurs de la signalisation induite par l’ET-1 dans les VSMCs, nous avons examiné si la CaMKII est également impliquée dans l’activation des voies d’ERK1/2 et de PKB induite par le H2O2. En utilisant des approches pharmacologiques et moléculaires, nous avons montré, comme pour l’ET-1, que la CaMKII joue un rôle critique en amont de la phosphorylation d’ERK1/2, de PKB et de Pyk2 induite par le H2O2. Nous avons précédemment montré que la transactivation du récepteur de type I de l’insulin-like growth factor (IGF-1R) est nécessaire à l’activation de PKB induite par le H2O2. Pour cette raison, nous avons examiné l'effet de l'inhibition de la CaMKII par l’inhibiteur pharmacologique ou par le knock-down de la CaMKII sur la phosphorylation d’IGF-1R induite par le H2O2. Les résultats démontrent que la CaMKII joue un rôle critique en amont de la phosphorylation d’ERK1/2, de PKB et d’IGF-1R induite par le H2O2. Dans la troisième partie de notre étude, nous avons également examiné le mécanisme moléculaire par lequel le NO exerce ses effets anti-mitogéniques et anti-hypertrophiques dans la signalisation induite par l’ET-1. En testant l'effet de deux différents donneurs de NO (S-nitroso-N-acetylpenicillamine (SNAP), sodium nitroprusside (SNP)) et un inhibiteur de NO synthase, le N (G)-nitro-L-arginine methyl ester (L-NAME) dans la phosphorylation d’ERK1/2, de PKB et de Pyk2 induite par l’ET-1, nous avons observé que le NO a un effet inhibiteur sur la signalisation induite par l’ET-1 dans les VSMCs. Par ailleurs, le 8-Br-GMPc, un analogue du GMPc, a un effet similaire à celui des deux donneurs du NO, tandis que l’oxadiazole quinoxaline (ODQ), un inhibiteur de la guanylate cyclase soluble, inverse l'effet inhibiteur du NO. Nous concluons que le NO diminue la phosphorylation d’ERK1/2, de PKB et de Pyk2 induite par l’ET-1 d’une manière dépendante du GMPc. Le NO inhibe aussi les effets hypertrophiques de l’ET-1 puisque le traitement avec le SNAP diminue la synthèse des protéines induite par l’ET-1. En résumé, les études présentées dans cette thèse démontrent que l’ET-1 et le H2O2 sont des activateurs de la phosphorylation d’ERK1/2, de PKB et de Pyk2 dans les VSMCs et que la CaMKII s’avère nécessaire pour ce processus, en agissant en amont de l’activation de IGF-1R induite par le H2O2 dans les VSMCs. Elles montrent également que le NO inhibe la phosphorylation d’ERK1/2, de PKB et de Pyk2 induite par l’ET-1. Enfin, nos travaux suggèrent aussi que l’activation de la CaMKII stimule la synthèse des protéines et de l’ADN induites par l’ET-1 alors que le NO inhibe la synthèse des protéines induite par ET-1. Mots clés: Endothéline ; Peroxyde d'hydrogène ; CaMKII ; Monoxyde d’azote ; Système vasculaire ; PKB; ERK1/2; IGF-1R; Hypertrophie.

Synthesis of Zinc oxide nanorods via conductive polymeric template and its potential application in hybrid solar cells.

Tesis (Doctorado en Ciencias con orientación en Química de los Materiales) UANL, 2014.

Limited capacity for ammonia removal by brain in chronic liver failure: potential role of nitric oxide.

Chronic liver failure leads to hyperammonemia and consequently increased brain ammonia concentrations, resulting in hepatic encephalopathy. When the liver fails to regulate ammonia concentrations, the brain, devoid of a urea cycle, relies solely on the amidation of glutamate to glutamine through glutamine synthetase, to efficiently clear ammonia. Surprisingly, under hyperammonemic conditions, the brain is not capable of increasing its capacity to remove ammonia, which even decreases in some regions of the brain. This non-induction of glutamine synthetase in astrocytes could result from possible limiting substrates or cofactors for the enzyme, or an indirect effect of ammonia on glutamine synthetase expression. In addition, there is evidence that nitration of the enzyme resulting from exposure to nitric oxide could also be implicated. The present review summarizes these possible factors involved in limiting the increase in capacity of glutamine synthetase in brain, in chronic liver failure.

The involvement of nitric oxide in bovine follicular development and ovulation

Comprendre les événements paracriniens qui régulent la fertilité chez la vache est nécessaire non seulement en raison de l'importance agricole de cette espèce, mais aussi pour son utilisation potentielle comme modèle chez l’humain. L'oxyde nitrique (NO), un gaz de radicaux libres, a été impliqué dans la croissance folliculaire et l'ovulation chez les rongeurs et d'autres espèces, mais chez la vache c’est une énigme fascinante : le NO est produit par les cellules de la granulosa bovine et est régulé par la FSH, mais la présence et le profil d'expression des enzymes responsables de la synthèse de NO (NOS) dans les cellules de la granulosa tout au long de la croissance folliculaire ne sont pas claires. Les objectifs de cette thèse sont: (1) élucider le mécanisme de contrôle des NOS et les conséquences de la production d'oxyde nitrique pour le fonctionnement des cellules de la granulosa au cours du développement folliculaire chez la vache et (2) déterminer la régulation des NOS pendant la cascade ovulatoire induite par LH chez les cellules de la granulosa bovine et si l'activité des NOS pour l’expression des gènes critiques dans la cascade ovulatoire chez cette espèce. Les résultats sont séparés en 2 articles. Dans le premier article, la régulation de NOS2 dans les cellules de la granulosa bovine a été explorée. L'abondance des ARNm codant pour NOS2 a été stimulée par la FSH et l’IGF1 en augmentant l’estradiol, et un blocage de l'action de l’estradiol a conséquemment réduit les niveaux d'ARNm codant pour NOS2. De plus, l'inhibition de l'activité des NOS a augmenté l'apoptose dans les cellules de la granulosa in vitro. Dans le second article, il a été démontré que le pic de LH induit une activation des NOS dans les cellules de la granulosa, et que l'activité de NOS induit la production de NO, ce qui est essentiel pour l’expression des gènes critiques dans la cascade ovulatoire induite par LH comme EREG/AREG/PTGS2. Ensemble, les résultats présentés dans ces 2 articles suggèrent que les niveaux physiologiques d'activité des NOS peuvent contribuer à la croissance et la survie des cellules de la granulosa et indiquent également que NO peut être essentiel pour l'ovulation chez les bovins.

Selective inhibition of inducible nitric oxide synthase prevents lipid peroxidation in cartilage from patients with osteoarthritis.

INTRODUCTION: Emerging evidence indicates that nitric oxide (NO), which is increased in osteoarthritic (OA) cartilage, plays a role in 4-hydroxynonenal (HNE) generation through peroxynitrite formation. HNE is considered as the most reactive product of lipid peroxidation (LPO). We have previously reported that HNE levels in synovial fluids are more elevated in knees of OA patients compared to healthy individuals. We also demonstrated that HNE induces a panoply of inflammatory and catabolic mediators known for their implication in OA cartilage degradation. The aim of the present study was to investigate the ability of inducible NO synthase (iNOS) inhibitor, L-NIL (L-N6-(L-Iminoethyl)Lysine), to prevent HNE generation through NO inhibition in human OA chondrocytes. METHOD: Cells and cartilage explants were treated with or without either an NO generator (SIN or interleukin 1beta (IL-1β)) or HNE in absence or presence of L-NIL. Protein expression of both iNOS and free-radical-generating NOX subunit p47 (phox) were investigated by western blot. iNOS mRNA detection was measured by real-time RT-PCR. HNE production was analysed by ELISA, Western blot and immunohistochemistry. S-nitrosylated proteins were evaluated by Western Blot. Prostaglandin E2 (PGE2) and metalloproteinase 13 (MMP-13) levels as well as glutathione S-transferase (GST) activity were each assessed with commercial kits. NO release was determined using improved Griess method. Reactive oxygen species (ROS) generation was revealed using fluorescent microscopy with the use of commercial kits. RESULTS: L-NIL prevented IL-1β-induced NO release, iNOS expression at protein and mRNA levels, S-nitrosylated proteins and HNE in a dose dependent manner after 24h of incubation. Interestingly, we revealed that L-NIL abolished IL-1β-induced NOX component p47phox as well as ROS release. The HNE-induced PGE2 release and both cyclooxygenase-2 (COX-2) and MMP-13 expression were significantly reduced by L-NIL addition. Furthermore, L-NIL blocked the IL-1β induced inactivation of GST, an HNE-metabolizing enzyme. Also, L-NIL prevented HNE induced cell death at cytotoxic levels. CONCLUSION: Altogether, our findings support a beneficial effect of L-NIL in OA by preventing LPO process in NO-dependent and/or independent mechanisms.

Plasma Polymerised Organic Thin Films-A Study on the Structural, Electrical and Nonlinear Optical Properties for Possible Applications

This proposed thesis is entitled “Plasma Polymerised Organic Thin Films: A study on the Structural, Electrical, and Nonlinear Optical Properties for Possible Applications. Polymers and polymer based materials find enormous applications in the realm of electronics and optoelectronics. They are employed as both active and passive components in making various devices. Enormous research activities are going on in this area for the last three decades or so, and many useful contributions are made quite accidentally. Conducting polymers is such a discovery, and eversince the discovery of conducting polyacetylene, a new branch of science itself has emerged in the form of synthetic metals. Conducting polymers are useful materials for many applications like polymer displays, high density data storage, polymer FETs, polymer LEDs, photo voltaic devices and electrochemical cells. With the emergence of molecular electronics and its potential in finding useful applications, organic thin films are receiving an unusual attention by scientists and engineers alike. This is evident from the vast literature pertaining to this field appearing in various journals. Recently, computer aided design of organic molecules have added further impetus to the ongoing research activities in this area. Polymers, especially, conducting polymers can be prepared both in the bulk and in the thinfilm form. However, many applications necessitate that they are grown in the thin film form either as free standing or on appropriate substrates. As far as their bulk counterparts are concerned, they can be prepared by various polymerisation techniques such as chemical routes and electrochemical means. A survey of the literature reveals that polymers like polyaniline, polypyrrole, polythiophene, have been investigated with a view to studying their structural electrical and optical properties. Among the various alternate techniques employed for the preparation of polymer thin films, the method of plasma polymerisation needs special attention in this context. The technique of plasma polymerisation is an inexpensive method and often requires very less infra structure. This method includes the employment of ac, rf, dc, microwave and pulsed sources. They produce pinhole free homogeneous films on appropriate substrates under controlled conditions. In conventional plasma polymerisation set up, the monomer is fed into an evacuated chamber and an ac/rf/dc/ w/pulsed discharge is created which enables the monomer species to dissociate, leading to the formation of polymer thin films. However, it has been found that the structure and hence the properties exhibited by plasma polymerized thin films are quite different from that of their counterparts produced by other thin film preparation techniques such as electrochemical deposition or spin coating. The properties of these thin films can be tuned only if the interrelationship between the structure and other properties are understood from a fundamental point of view. So very often, a through evaluation of the various properties is a pre-requisite for tailoring the properties of the thin films for applications. It has been found that conjugation is a necessary condition for enhancing the conductivity of polymer thin films. RF technique of plasma polymerisation is an excellent tool to induce conjugation and this modifies the electrical properties too. Both oxidative and reductive doping can be employed to modify the electrical properties of the polymer thin films for various applications. This is where organic thin films based on polymers scored over inorganic thin films, where in large area devices can be fabricated with organic semiconductors which is difficult to achieve by inorganic materials. For such applications, a variety of polymers have been synthesized such as polyaniline, polythiophene, polypyrrole etc. There are newer polymers added to this family every now and then. There are many virgin areas where plasma polymers are yet to make a foray namely low-k dielectrics or as potential nonlinear optical materials such as optical limiters. There are also many materials which are not been prepared by the method of plasma polymerisation. Some of the materials which are not been dealt with are phenyl hydrazine and tea tree oil. The advantage of employing organic extracts like tea tree oil monomers as precursors for making plasma polymers is that there can be value addition to the already existing uses and possibility exists in converting them to electronic grade materials, especially semiconductors and optically active materials for photonic applications. One of the major motivations of this study is to synthesize plasma polymer thin films based on aniline, phenyl hydrazine, pyrrole, tea tree oil and eucalyptus oil by employing both rf and ac plasma polymerisation techniques. This will be carried out with the objective of growing thin films on various substrates such as glass, quartz and indium tin oxide (ITO) coated glass. There are various properties namely structural, electrical, dielectric permittivity, nonlinear optical properties which are to be evaluated to establish the relationship with the structure and the other properties. Special emphasis will be laid in evaluating the optical parameters like refractive index (n), extinction coefficient (k), the real and imaginary components of dielectric constant and the optical transition energies of the polymer thin films from the spectroscopic ellipsometric studies. Apart from evaluating these physical constants, it is also possible to predict whether a material exhibit nonlinear optical properties by ellipsometric investigations. So further studies using open aperture z-scan technique in order to evaluate the nonlinear optical properties of a few selected samples which are potential nonlinear optical materials is another objective of the present study. It will be another endeavour to offer an appropriate explanation for the nonlinear optical properties displayed by these films. Doping of plasma polymers is found to modify both the electrical conductivity and optical properties. Iodine is found to modify the properties of the polymer thin films. However insitu iodine doping is tricky and the film often looses its stability because of the escape of iodine. An appropriate insitu technique of doping will be developed to dope iodine in to the plasma polymerized thin films. Doping of polymer thin films with iodine results in improved and modified optical and electrical properties. However it requires tools like FTIR and UV-Vis-NIR spectroscopy to elucidate the structural and optical modifications imparted to the polymer films. This will be attempted here to establish the role of iodine in the modification of the properties exhibited by the films

Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Characterization of radio frequency plasma using Langmuir probe and optical emission spectroscopy

The radio frequency plasma generated during the sputtering of Indium Tin Oxide target using Argon was analyzed by Langmuir probe and optical-emission spectroscopy. The basic plasma parameters such as electron temperature and ion density were evaluated. These studies were carried out by varying the RF power from 20 to 50 W. A linear increase in ion density and an exponential decrease in electron temperature with rf power were observed. The measured plasma parameters were then correlated with the properties of ITO thin films deposited under similar plasma conditions.

Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also discussed in relation to the carrier transport properties and amorphous structures.

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.

Optical emission spectroscopic studies on laser ablated zinc oxide plasma

Optical emission spectroscopic studies were carried out on the plasma produced by ablation of zinc oxide target using the third harmonic 355 nm of Q-switched Nd:YAG laser, in vacuum and at three different ambient gas oxygen pressures. The spatial variations of electron density Ne and electron temperature Te were studied up to a distance of 20 mm from the target surface. The kinematics of the emitted particles and the expansion of the plume edge are discussed. The optimum conditions favorable for the formation of high quality zinc oxide thin films are thereby suggested.