Observation of localized states in atomically thin MoS2 field effect transistor

We present electrical transport arid low frequency (1/f) noise measurements on mechanically exfoliated single, In and triLayer MoS2-based FPI devices on Si/SiO2 substrate. We find that tie electronic states hi MoS2 are localized at low temperatures (T) and conduction happens through variable range hopping (VRH). A steep increase of 1/f noise with decreasing T, typical for localized regime was observed in all of our devices. From gate voltage dependence of noise, we find that the noise power is inversely proportional to square of the number density (proportional to 1/n(2)) for a wide range of T, indicating number density fluctuations to be the dominant source of 1/f noise in these MoS2 FETs.

Analytical solutions for transient temperature distribution in a geothermal reservoir due to cold water injection

An analytical solution to describe the transient temperature distribution in a geothermal reservoir in response to injection of cold water is presented. The reservoir is composed of a confined aquifer, sandwiched between rocks of different thermo-geological properties. The heat transport processes considered are advection, longitudinal conduction in the geothermal aquifer, and the conductive heat transfer to the underlying and overlying rocks of different geological properties. The one-dimensional heat transfer equation has been solved using the Laplace transform with the assumption of constant density and thermal properties of both rock and fluid. Two simple solutions are derived afterwards, first neglecting the longitudinal conductive heat transport and then heat transport to confining rocks. Results show that heat loss to the confining rock layers plays a vital role in slowing down the cooling of the reservoir. The influence of some parameters, e.g. the volumetric injection rate, the longitudinal thermal conductivity and the porosity of the porous media, on the transient heat transport phenomenon is judged by observing the variation of the transient temperature distribution with different values of the parameters. The effects of injection rate and thermal conductivity have been found to be profound on the results.

ESD Investigations of Multiwalled Carbon Nanotubes

Electrostatic discharge (ESD) investigations on the multiwalled carbon nanotubes (MWCNTs) are performed for the first time. A novel ESD failure mechanism of subsequent shell burning has been discovered. By using nanosecond pulse measurements, a new insight into metal-to-carbon nanotube (CNT) contact behavior could be achieved. Clear signature of two very different conduction mechanisms and related failure types at high current injection has been found. By determining the time to failure, an Arrhenius-like relation was extracted, which was explained by the oxidation of CNT shells. Finally, an extraordinary ESD failure current density of MWCNT of 1.2 x 10(9) A/cm(2) could be shown.

Near-infrared photoactive Cu3BiS3 thin films by co-evaporation

Semiconducting Cu3BiS3 (CBS) thin films were deposited by co-evaporation of Cu, Bi elemental metallic precursors, with in situ sulphurisation, using a quartz effusion cell. Cu3BiS3 thin films were structurally characterized by XRD and FE-SEM. The chemical bonding of the ions was examined by XPS. As deposited films were demonstrated for metal-semiconductor-metal near IR photodectection under lamp and laser illuminations. The photo current amplified to three orders and two orders of magnitude upon the IR lamp and 60 m W cm(-2) 1064 nm IR laser illuminations, respectively. Larger grains, made up of nano needle bunches aided the transport of carriers. Transport properties were explained based on the trap assisted space charge conduction mechanism. Steady state detector parameters like responsivity varied from 1.04 AW(-1) at 60 m Wcm(-2) to 0.22 AW(-1) at 20 m Wcm(-2). Detector sensitivity of 295 was found to be promising and further could be tuned for better responsivity and efficiency in utilization of near infra-red photodetector. (C) 2014 AIP Publishing LLC.

Suppression of grain boundary relaxation in Zr-doped BiFeO3 thin films

Here, we present the results of temperature dependent dielectric studies on chemical solution processed Zr-doped BiFeO3 (BFO) thin films deposited on Pt/Si substrates. We find that in contrast to the undoped BFO films, Zr doping at Fe-site suppresses the low frequency dielectric relaxation originating from the grain boundaries, attributed to the increased dipolar rigidity due to stronger Zr-O bonds. Temperature dependent dc conductivity obtained from impedance and modulus analyses shows two distinct conduction processes occurring inside the grains. At temperature below similar to 423K, conductivity is nearly temperature independent, while in the high temperature regime (above similar to 423K), conduction is governed by the long range movement of oxygen vacancies with an activation energy of similar to 1eV. (C) 2014 AIP Publishing LLC.

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

Molybdenum disulphide is a layered transition metal dichalcogenide that has recently raised considerable interest due to its unique semiconducting and opto-electronic properties. Although several theoretical studies have suggested an electronic phase transition in molybdenum disulphide, there has been a lack of experimental evidence. Here we report comprehensive studies on the pressure-dependent electronic, vibrational, optical and structural properties of multilayered molybdenum disulphide up to 35 GPa. Our experimental results reveal a structural lattice distortion followed by an electronic transition from a semiconducting to metallic state at similar to 19 GPa, which is confirmed by ab initio calculations. The metallization arises from the overlap of the valance and conduction bands owing to sulphur-sulphur interactions as the interlayer spacing reduces. The electronic transition affords modulation of the opto-electronic gain in molybdenum disulphide. This pressure-tuned behaviour can enable the development of novel devices with multiple phenomena involving the strong coupling of the mechanical, electrical and optical properties of layered nanomaterials.

Effect of post-deposition annealing on composition and electrical properties of dc reactive magnetron sputtered Al2O3 thin films

We have investigated the effect of post- deposition annealing on the composition and electrical properties of alumina (Al2O3) thin films. Al2O3 were deposited on n-type Si < 100 >. substrates by dc reactive magnetron sputtering. The films were subjected to post- deposition annealing at 623, 823 and 1023 K in vacuum. X-ray photoelectron spectroscopy results revealed that the composition improved with post- deposition annealing, and the film annealed at 1023 K became stoichiometric with an O/Al atomic ratio of 1.49. Al/Al2O3/Si metal-oxide-semiconductor (MOS) structures were then fabricated, and a correlation between the dielectric constant epsilon(r) and interface charge density Q(i) with annealing conditions were studied. The dielectric constant of the Al2O3 thin films increased to 9.8 with post- deposition annealing matching the bulk value, whereas the oxide charge density decreased to 3.11 x 10(11) cm(-2.) Studies on current-voltage IV characteristics indicated ohmic and Schottky type of conduction at lower electric fields (<0.16 MV cm(-1)) and space charge limited conduction at higher electric fields.

Selenium in Diketopyrrolopyrrole-based Polymers: Influence on Electronic Properties and Charge Carrier Mobilities

Diketopyrrolopyrrole (DPP)-based pi-conjugated copolymers with thiophene have exceptionally high electron mobilities. This paper investigates electronic properties and charge carrier mobilities of selenophene containing analogues. Two new copolymers, with alternating thiophene DPP (TDPP) and selenophene DPP (SeDPP) units, were synthesized. Two side-chains, hexyl (Hex) and triethylene glycol (TEG) were employed, yielding polymers designated as PTDPPSeDPP-Hex and PTDPPSeDPP-TEG. Selenophene systems have smaller band gaps, with concomitant enhancement of the stability of the reduced state. For both polymers, ambipolar mobilities were observed in organic field-effect transistors (OFET). Grazing incidence X-ray diffraction (GIXD) data indicates preferential edge-on orientation of PTDPPSeDPP-TEG, which leads to superior charge transport properties of the TEG substituted polymer, as compared to its Hex analogue. Time-dependent-density functional theory (TDDFT) calculations corroborate the decrease in the optical band gap with the inclusion of selenophene. Ambipolar charge transport is rationalized by exceptionally wide conduction bands. Delta SCF calculations confirm the larger electron affinity, and therefore the greater stability, of the reduced form of the selenophene-containing DPP polymer in presence of chloroform.

Fermi-Edge Transmission Resonance in Graphene Driven by a Single Coulomb Impurity

The interaction between the Fermi sea of conduction electrons and a nonadiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of charge through the impurity. The resulting effect, known as the Fermi edge singularity (FES), constitutes one of the most fundamental many-body phenomena in quantum solid state physics. Here we report the first observation of FES for Dirac fermions in graphene driven by isolated Coulomb impurities in the conduction channel. In high-mobility graphene devices on hexagonal boron nitride substrates, the FES manifests in abrupt changes in conductance with a large magnitude approximate to e(2)/h at resonance, indicating total many-body screening of a local Coulomb impurity with fluctuating charge occupancy. Furthermore, we exploit the extreme sensitivity of graphene to individual Coulomb impurities and demonstrate a new defect-spectroscopy tool to investigate strongly correlated phases in graphene in the quantum Hall regime.

Turbulence and cooling in galaxy cluster cores

We study the interplay between turbulent heating, mixing, and radiative cooling in an idealized model of cool cluster cores. Active galactic nuclei (AGN) jets are expected to drive turbulence and heat cluster cores. Cooling of the intracluster medium (ICM) and stirring by AGN jets are tightly coupled in a feedback loop. We impose the feedback loop by balancing radiative cooling with turbulent heating. In addition to heating the plasma, turbulence also mixes it, suppressing the formation of cold gas at small scales. In this regard, the effect of turbulence is analogous to thermal conduction. For uniform plasma in thermal balance (turbulent heating balancing radiative cooling), cold gas condenses only if the cooling time is shorter than the mixing time. This condition requires the turbulent kinetic energy to be a parts per thousand(3) the plasma internal energy; such high velocities in cool cores are ruled out by observations. The results with realistic magnetic fields and thermal conduction are qualitatively similar to the hydrodynamic simulations. Simulations where the runaway cooling of the cool core is prevented due to mixing with the hot ICM show cold gas even with subsonic turbulence, consistent with observations. Thus, turbulent mixing is the likely mechanism via which AGN jets heat cluster cores. The thermal instability growth rates observed in simulations with turbulence are consistent with the local thermal instability interpretation of cold gas in cluster cores.

Use of side-chain for rational design of n-type diketopyrrolopyrrole-based conjugated polymers: what did we find out?

The primary role of substituted side chains in organic semiconductors is to increase their solubility in common organic solvents. In the recent past, many literature reports have suggested that the side chains play a critical role in molecular packing and strongly impact the charge transport properties of conjugated polymers. In this work, we have investigated the influence of side-chains on the charge transport behavior of a novel class of diketopyrrolopyrrole (DPP) based alternating copolymers. To investigate the role of side-chains, we prepared four diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP) conjugated polymers with varied side-chains and carried out a systematic study of thin film microstructure and charge transport properties in polymer thin-film transistors (PTFTs). Combining results obtained from grazing incidence X-ray diffraction (GIXD) and charge transport properties in PTFTs, we conclude side-chains have a strong influence on molecular packing, thin film microstructure, and the charge carrier mobility of DPP-DPP copolymers. However, the influence of side-chains on optical properties was moderate. The preferential ``edge-on'' packing and dominant n-channel behavior with exceptionally high field-effect electron mobility values of >1 cm(2) V-1 s(-1) were observed by incorporating hydrophilic (triethylene glycol) and hydrophobic side-chains of alternate DPP units. In contrast moderate electron and hole mobilities were observed by incorporation of branched hydrophobic side-chains. This work clearly demonstrates that the subtle balance between hydrophobicity and hydrophilicity induced by side-chains is a powerful strategy to alter the molecular packing and improve the ambipolar charge transport properties in DPP-DPP based conjugated polymers. Theoretical analysis supports the conclusion that the side-chains influence polymer properties through morphology changes, as there is no effect on the electronic properties in the gas phase. The exceptional electron mobility is at least partially a result of the strong intramolecular conjugation of the donor and acceptor as evidenced by the unusually wide conduction band of the polymer.

Approximation of Spatio-Temporal Random Processes Using Tensor Decomposition

A new representation of spatio-temporal random processes is proposed in this work. In practical applications, such processes are used to model velocity fields, temperature distributions, response of vibrating systems, to name a few. Finding an efficient representation for any random process leads to encapsulation of information which makes it more convenient for a practical implementations, for instance, in a computational mechanics problem. For a single-parameter process such as spatial or temporal process, the eigenvalue decomposition of the covariance matrix leads to the well-known Karhunen-Loeve (KL) decomposition. However, for multiparameter processes such as a spatio-temporal process, the covariance function itself can be defined in multiple ways. Here the process is assumed to be measured at a finite set of spatial locations and a finite number of time instants. Then the spatial covariance matrix at different time instants are considered to define the covariance of the process. This set of square, symmetric, positive semi-definite matrices is then represented as a third-order tensor. A suitable decomposition of this tensor can identify the dominant components of the process, and these components are then used to define a closed-form representation of the process. The procedure is analogous to the KL decomposition for a single-parameter process, however, the decompositions and interpretations vary significantly. The tensor decompositions are successfully applied on (i) a heat conduction problem, (ii) a vibration problem, and (iii) a covariance function taken from the literature that was fitted to model a measured wind velocity data. It is observed that the proposed representation provides an efficient approximation to some processes. Furthermore, a comparison with KL decomposition showed that the proposed method is computationally cheaper than the KL, both in terms of computer memory and execution time.

Dense shallow granular flows

Simplified equations are derived for a granular flow in the `dense' limit where the volume fraction is close to that for dynamical arrest, and the `shallow' limit where the stream-wise length for flow development (L) is large compared with the cross-stream height (h). The mass and diameter of the particles are set equal to 1 in the analysis without loss of generality. In the dense limit, the equations are simplified by taking advantage of the power-law divergence of the pair distribution function chi proportional to (phi(ad) - phi)(-alpha), and a faster divergence of the derivativ rho(d chi/d rho) similar to (d chi/d phi), where rho and phi are the density and volume fraction, and phi(ad) is the volume fraction for arrested dynamics. When the height h is much larger than the conduction length, the energy equation reduces to an algebraic balance between the rates of production and dissipation of energy, and the stress is proportional to the square of the strain rate (Bagnold law). In the shallow limit, the stress reduces to a simplified Bagnold stress, where all components of the stress are proportional to (partial derivative u(x)/partial derivative y)(2), which is the cross-stream (y) derivative of the stream-wise (x) velocity. In the simplified equations for dense shallow flows, the inertial terms are neglected in the y momentum equation in the shallow limit because the are O(h/L) smaller than the divergence of the stress. The resulting model contains two equations, a mass conservation equations which reduces to a solenoidal condition on the velocity in the incompressible limit, and a stream-wise momentum equation which contains just one parameter B which is a combination of the Bagnold coefficients and their derivatives with respect to volume fraction. The leading-order dense shallow flow equations, as well as the first correction due to density variations, are analysed for two representative flows. The first is the development from a plug flow to a fully developed Bagnold profile for the flow down an inclined plane. The analysis shows that the flow development length is ((rho) over barh(3)/B) , where (rho) over bar is the mean density, and this length is numerically estimated from previous simulation results. The second example is the development of the boundary layer at the base of the flow when a plug flow (with a slip condition at the base) encounters a rough base, in the limit where the momentum boundary layer thickness is small compared with the flow height. Analytical solutions can be found only when the stream-wise velocity far from the surface varies as x(F), where x is the stream-wise distance from the start of the rough base and F is an exponent. The boundary layer thickness increases as (l(2)x)(1/3) for all values of F, where the length scale l = root 2B/(rho) over bar. The analysis reveals important differences between granular flows and the flows of Newtonian fluids. The Reynolds number (ratio of inertial and viscous terms) turns out to depend only on the layer height and Bagnold coefficients, and is independent of the flow velocity, because both the inertial terms in the conservation equations and the divergence of the stress depend on the square of the velocity/velocity gradients. The compressibility number (ratio of the variation in volume fraction and mean volume fraction) is independent of the flow velocity and layer height, and depends only on the volume fraction and Bagnold coefficients.

Tailoring the Microstructural, Optical, and Electrical Properties of Nanocrystalline WO3 Thin Films Using Al Doping

We have studied the influence of Al doping on the microstructural, optical, and electrical properties of spray-deposited WO3 thin films. XRD analyses confirm that all the films are of polycrystalline WO3 in nature, possessing monoclinic structure. EDX profiles of the Al-doped films show aluminum peaks implying incorporation of Al ions into WO3 lattice. On Al doping, the average crystallite size decreases due to increase in the density of nucleation centers at the time of film growth. The observed variation in the lattice parameter values on Al doping is attributed to the incorporation of Al ions into WO3 lattice. Enhancement in the direct optical band gap compared to the undoped film has been observed on Al doping due to decrease in the width of allowed energy states near the conduction band edge. The refractive indices of the films follow the Cauchy relation of normal dispersion. Electrical resistivity compared to the undoped film has been found to increase on Al doping.

Conductivity noise study of the insulator-metal transition and phase coexistence in epitaxial samarium nickelate thin films

Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually ``bad metal,'' but also introduces a temperature-driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of SmNiO3 using the slow time-dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is found to be extremely large, being nearly eight orders of magnitude higher than thin films of common disordered metallic systems, and indicates electrical conduction via classical percolation in a spatially inhomogeneous medium. The higher-order statistics of the fluctuations indicate a strong non-Gaussian component of noise close to the transition, attributing the inhomogeneity to the coexistence of the metallic and insulating phases. Our experiment offers insight into the impact of lattice-orbital coupling on the microscopic mechanism of electron transport in the rare-earth nickelates.