995 resultados para Cholesterol transport


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A decentralized emission inventories are prepared for road transport sector of India in order to design and implement suitable technologies and policies for appropriate mitigation measures. Globalization and liberalization policies of the government in 90's have increased the number of road vehicles nearly 92.6% from 1980–1981 to 2003–2004. These vehicles mainly consume non-renewable fossil fuels, and are a major contributor of green house gases, particularly CO2 emission. This paper focuses on the statewise road transport emissions (CO2, CH4, CO, NOx, N2O, SO2, PM and HC), using region specific mass emission factors for each type of vehicles. The country level emissions (CO2, CH4, CO, NOx, N2O, SO2 and NMVOC) are calculated for railways, shipping and airway, based on fuel types. In India, transport sector emits an estimated 258.10 Tg of CO2, of which 94.5% was contributed by road transport (2003–2004). Among all the states and Union Territories, Maharashtra's contribution is the largest, 28.85 Tg (11.8%) of CO2, followed by Tamil Nadu 26.41 Tg (10.8%), Gujarat 23.31 Tg (9.6%), Uttar Pradesh 17.42 Tg (7.1%), Rajasthan 15.17 Tg (6.22%) and, Karnataka 15.09 Tg (6.19%). These six states account for 51.8% of the CO2 emissions from road transport.

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GaN films were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). The effect of N/Ga flux ratio on structural, morphological, and optical properties was studied. The dislocation density found to increase with increasing the N/Ga ratio. The surface morphology of the films as seen by scanning electron microscopy shows pits on the surface and found that the pit density on the surface increases with N/Ga ratio. The room temperature photoluminescence study reveals the shift in band-edge emission toward the lower energy with increase in N/Ga ratio. This is believed to arise from the reduction in compressive stress in the films as is evidenced by room temperature Raman study. The transport studied on the Pt/GaN Schottky diodes showed a significant increase in leakage current with an increase in N/Ga ratio and was found to be caused by the increase in pit density as well as increase in dislocation density in the GaN films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3634116]

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Numerical modeling of saturated subsurface flow and transport has been widely used in the past using different numerical schemes such as finite difference and finite element methods. Such modeling often involves discretization of the problem in spatial and temporal scales. The choice of the spatial and temporal scales for a modeling scenario is often not straightforward. For example, a basin-scale saturated flow and transport analysis demands larger spatial and temporal scales than a meso-scale study, which in turn has larger scales compared to a pore-scale study. The choice of spatial-scale is often dictated by the computational capabilities of the modeler as well as the availability of fine-scale data. In this study, we analyze the impact of different spatial scales and scaling procedures on saturated subsurface flow and transport simulations.

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InN quantum dots (QDs) were fabricated on silicon nitride/Si (111) substrate by droplet epitaxy. Single-crystalline structure of InN QDs was verified by transmission electron microscopy, and the chemical bonding configurations of InN QDs were examined by x-ray photoelectron spectroscopy. Photoluminescence measurement shows a slight blue shift compared to the bulk InN, arising from size dependent quantum confinement effect. The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of InN QDs were studied in a metal-semiconductor-metal configuration in the temperature range of 80-300K. The I-V characteristics of lateral grown InN QDs were explained by using the trap model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651762]

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In order to identify the dominant mechanism of ionic conduction, the electrical conductivity and ionic mobility of the glasses (AgX)0.4(Ag2O)0.3(GeO2)0.3 (X = I, Br, Cl) were measured separately in the temperature range from 293 to 393 K by coupling the AC technique with the TIC method. Electronic conductivity was also measured at 293 K by the Wagner polarization method. The total electrical conductivity of these glasses was found to be as high as 10-1 Ω-1 m-1, and the mobility about 10-6 m2 V-1 s-1. The variation of total electrical conductivity and mobility at constant temperature and composition with the type of halide occurred in the sequence, Cl < Br < I. For each composition, both conductivity and mobility increased with temperature. The mobile ion concentration was found to be about 1023 m-3 at 293 K, and it was insensitive to the type of halide as well as temperature. The results suggest that the change in ionic conductivity with the temperature and the type of halide present is mainly attributable to the change in ionic mobility rather than carrier concentration. Moreover, the electronic conductivity was found to be about 10-6 Ω-1 m-1 at 293 K. Thus, the electronic contribution to the total conductivity is negligibly small.

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Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic (beta) and hexagonal (alpha) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 degrees C when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 degrees C. Core-level photoelectron spectroscopy of Si(x)N(y) layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors (similar to 1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658867]