994 resultados para 7140-238


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Several biochemical responses were measured in silver crucian carp (Carassius auratus gibelio) after exposure to sediments obtained from contaminated Ya-Er Lake, No, 1 pond, and an unpolluted reference site, Honglian Lake. After 1 week of exposure, a significant induction of the phase I biotransformation enzyme (ethoxylresorufin-o-deethylase, EROD) was found (83-fold of control), whereas the phase II biotransformation enzyme (glutathione S-transferase, GST) exhibited a slight, but significant induction (1,4-fold of control) after 4 weeks of exposure. The level of cellular glutathione in the liver was also slightly elevated after 4 weeks of exposure. The delayed response of GST to the contaminants indicates that the phase I and phase II biotransformation enzymes are regulated differently in fish. The results suggest that EROD is a sensitive bioindicator to assess the toxicity of dioxin-contamined sediment in the laboratory, (C) 1998 Academic Press.

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The relative compositions of bacterioplankton, phytoplankton, zooplankton and detritus of seston were studied during the course of inundation in a floodplain lake of central Changjiang (China). Peaks in bacterial biomass developed shortly after flooding, coinciding with the initial leaching of organic nutrients from vegetation submerged under floodwater, and again at high water, shortly before the climax of phytoplankton biomass. Rods predominated the bacterial carbon biomass. Phytoplankton developed a postflood bloom at initial falling, corresponding to the drainage of the lake water into the river. While minimal biomass occurred during the advent of flooding, most likely due to disturbance and dilution. Algal biomass was usually dominated by Chlorophyta. Highest biomass of zooplankton was recorded at the end of the flooding in connection with the decline in turbidity, and once again at early drainage, closely associated with high phytoplankton biomass. Copepods (mainly nauplii) always constituted the majority of zooplankton carbon biomass. Peaks in detrital carbon concentrations were recorded at rising and falling water phases, corresponding respectively to the riverine discharge and decomposition of macrophyte mats. At rising water phase, CPOC was abundant. While during other water phases, this predominance was shifted to FPOC alone. Taken together, average contribution of bacterioplankton, phytoplankton, zooplankton and detritus to total seston carbon was 3.29, 21.21, 6.83 and 68.67 %, respectively.

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This paper proposes an ultra-low power CMOS random number generator (RING), which is based on an oscillator-sampling architecture. The noisy oscillator consists of a dual-drain MOS transistor, a noise generator and a voltage control oscillator. The dual-drain MOS transistor can bring extra-noise to the drain current or the output voltage so that the jitter of the oscillator is much larger than the normal oscillator. The frequency division ratio of the high-frequency sampling oscillator and the noisy oscillator is small. The RNG has been fabricated in a 0.35 mu m CMOS process. It can produce good quality bit streams without any post-processing. The bit rate of this RNG could be as high as 100 kbps. It has a typical ultra-low power dissipation of 0.91 mu W. This novel circuit is a promising unit for low power system and communication applications. (c) 2007 Elsevier Ltd. All rights reserved.

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We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films.

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The effects of Si and Mg doping on the crystalline quality and In distribution in the InGaN films were studied by atomic force microscope (AFM), triple crystal X-ray diffraction (TCXRD) and Rutherford backscattering spectrometry (RBS). The undoped, Si-doped and Mg-doped InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) on (0 0 0 1) sapphire substrates. The electronic concentration in the Si-doped InGaN is about 2 x 10(19) cm(-3). It is found that the crystalline quality and In distribution in InGaN is slightly affected by the Si doping. In the Mg doped-case, the hole concentration is about 4 x 10(18) cm(-3) after annealing treatment. The surface morphology and crystalline quality of the Mg-doped InGaN are deteriorated significantly compared with the undoped InGaN. The growth rate of Mg-doped InGaN is higher than the undoped InGaN. Mg doping enhances the In incorporation in the InGaN alloy. The increase in In composition in the growth direction is more severe than the undoped InGaN. (c) 2006 Elsevier B.V. All rights reserved.

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Based on experimental results and theoretical analysis effects of the crystal structure on the optical and electrical properties of pyrite FeS2 films produced by thermally sulfurizing iron films at various temperatures have been systematically studied. The results indicate that the crystal structure and some related factors, such as the crystallization and the stoichiometry, remarkably influence the optical and electrical performances of the pyrite films. It is also shown that the preferred orientation of the crystal grain plays a major role in determining the crystal structure and the optical and electrical properties of the pyrite FeS2 films. Also we find that it is the crystal grains, rather than the particles that exercise a decisive influence on the electrical performance of pyrite films. (C) 2003 Elsevier Science B.V. All rights reserved.

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Photocurrent spectroscopy has been used to study quantum-well intermixing in this paper. The cut-off wavelength of the photodiodes based on the implanted and annealed materials is significantly reduced, compared with that measured in annealed-only photodetectors. The bandgap of SiGe quantum well in implanted and annealed samples is blue-shifted by up to 97 meV, relative to that in annealed-only samples. (C) 2000 Elsevier Science S.A. All rights reserved.

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Directional emission triangle and square InGaAsP/InP lasers have been fabricated by standard photolithography, inductively coupled plasma etching technique combined with wet chemical etching process. In this article, the characteristics of the microcavity lasers are presented. For an equilateral triangle microcavity laser with the side length of 30 mu m, we got the laser spectra fitted very well with the mode wavelength formulate LIP to the 8(th) transverse mode at room temperature. But the laser spectra are usually more complex than the formulae for the lasers, especially for the lasers with a smaller side length. For a square microcavity laser with side length of 20 mu m, we observed the mode competition between the Fabry-Perot (FP) modes and Whispering-Gallery (WG) modes at 200K. The output spectra below the threshold have the mode interval of FP modes with a large mode interval, and the laser spectra agree very well with the WG modes, which have mode interval less than the FP modes. The output spectra are dominated by the FP modes below the threshold, because the FP modes have a higher output coupling efficiency than the WG modes.

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The self-organized InAs/In0.52Al0.48As nanostructure were grown on InP (001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b = ([001]/2) and extending along the [$(110) over bar $] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.

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利用Java媒体框架(JMF)开发的视频点播系统具有开发简单、跨平台、提供QoS保证和交互性好等优点,具有广泛的应用前景.介绍了JMF应用编程接口的特点和结构,阐述了基于JMF开发的跨平台的视频点播系统的整体结构设计,并详细介绍了基于RTP的实时媒体传输、基于RTCP的拥塞控制、完整VCR操作和穿越NAT等关键技术的具体实现.

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无线自组网络是一种不需要基础通信设施的自组织网络,正得到越来越多的应用.当前自组网络的安全性研究正成为一个热点.对基于簇结构的自组网络进行了安全分析,并且针对存在的安全问题提出了新的安全解决方案.主要贡献在于:①提出了一个保护簇首的安全机制;②针对节点簇间漫游的安全隐患,提出一个基于请求的节点信息共享机制,并给出了相应的算法.对该方案进行了仿真实验,结果显示,该方案具有充分的可行性.与已有方案相比,该方案具有较完善的安全机制,网络性能也较好.

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TAE(tweakable authenticated encryption)模式是一种基于可调分组密码的加密认证模式.研究结果表明,安全的可调分组密码不是安全的TAE模式的充分条件.只有当可调分组密码是强安全的时候,TAE模式才是安全的.同时,还给出了TAE模式的一些改进,得到模式MTAE(modified tweakable authenticat edencryption),并且证明了其安全性.

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非结构化P2P Overlay网络的结构松散,网络中资源的分布没有明确的限制,这使得非结构化P2P Overlay网络中的资源搜索在很大程度上依赖于通信开销巨大的泛洪法,因而非结构化P2P系统在伸缩性,可用性等方面,存在明显的不足.非结构化P2P Overlay网络的上述特点决定了非结构化P2P Overlay优化技术的重要性.本文分四大类别,对非结构化P2P Overlay优化技术进行了介绍,分析比较了各类方法的优劣以及它们的适用场合,并在此基础上对未来工作进行了展望.