Computational modelling of building damage due to tunnelling

Underground constructions in soft ground may lead to settlement damage to existing buildings. In The Netherlands the situation is particularly complex, because of the combination of soft soil, fragile pile foundations and brittle, unreinforced masonry façades. The tunnelling design process in urban areas requires a reliable risk damage assessment. In the engineering practice the current preliminary damage assessment is based on the limiting tensile strain method (LTSM). Essentially this is an uncoupled analysis, in which the building is modelled as an elastic beam subject to imposed Greenfield settlements and the induced tensile strains are compared with a limit value for the material. The soil-structure interaction is included only as a ratio between the soil and the building stiffness. In this paper, a coupled approach is evaluated. The soil-structure interaction in terms of normal and shear behaviour is represented by interface elements and a cracking model for masonry is included. This project aims to improve the existing damage classification system for masonry buildings subjected to tunnel-induced settlement, in order to evaluate the necessity of strengthening techniques or mitigation measures.

Coupled analysis of building damage due to tunnelling

Excavation works in urban areas require a preliminary risk damage assessment. In historical cities, the prediction of building response to settlements is necessary to reduce the risk of damage of the architectural heritage. The current method used to predict the building damage due to ground deformations is the Limiting Tensile Strain Method (LTSM). This method is based on an uncoupled soil-structure analysis, in which the building is modelled as an elastic beam subject to imposed greenfield settlements and the induced tensile strains are compared with a limit value for the material. This approach neglects many factors which play an important rule in the response of the structure to tunneling induced settlements. In this paper, the possibility to apply a settlement risk assessment derived from the seismic vulnerability approach is considered. The parameters that influence the structural response to settlements can be defined through numerical coupled analyses which take into account the nonlinear behaviour of masonry and the soil-structure interaction.

Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

Sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (ICP) etching technique was proposed to improve the performance of GaN-based light-emitting diodes (LEDs). GaN-based LEDs were fabricated on sapphire substrates through metal organic chemical vapor deposition (MOCVD). The LEDs fabricated on the patterned substrates exhibit improved device performance compared with the conventional LED fabricated on planar substrates when growth and device fabricating conditions were the same. The light output powers of the LEDs fabricated on wet-patterned and ICP-patterned substrates were about 37% and 17% higher than that of LEDs on planar substrates at an injection current of 20 mA, respectively. The enhancement is attributable to the combination of the improvement of GaN-based epilayers quality and the improvement of the light extraction efficiency. (c) 2008 Elsevier Ltd. All rights reserved.

Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs

Nano-patterned sapphire substrates (NPSSs) were fabricated by a chemical wet etching technology using nano-sized SiO2 as masks. The NPSS was applied to improve the performance of GaN-based light emitting diodes (LEDs). GaN-based LEDs on NPSSs were grown by metal organic chemical vapour deposition. The characteristics of LEDs grown on NPSSs and conventional planar sapphire substrates were studied. The light output powers of the LEDs fabricated on NPSSs were considerably enhanced compared with that of the conventional LEDs grown on planar sapphire substrates.

An analysis of the performance of a new high-speed single-way analog switch

This paper introduces a new highspeed single-way analog switch which has both highspeed high-resolution mono-direction analog transmission gate function and high-speed digital logic gate function with normal bipolar technology. The analysis of static and transient switching performances as an analog transmission gate is emphasized in the paper. In order to reduce the plug-in effect on high-speed high-resolution systems, an optimum design scheme is also given. This scheme is to achieve accelerated dynamic response with very low bias power dissipation. The analysis of PSPICE simulation as well as the circuit test results confirms the feasibility of the scheme. Now, the circuit has been applied effectively to the designs of novel highspeed A/D and D/A converters.

Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs

In this paper, we report on the design, growth and fabrication of 980nm strained InGaAs quantum well lasers employing novel material system of Al-free active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in laser structure design, improvement of surface morphology and laser performance. We demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. The laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). The broad-area and ridge-waveguide laser devices are both fabricated. For 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170mA, a high slope efficiency of 1.0W/A and high output power of more than 3.5W are achieved. The temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (T-o) of 200-250K and a wavelength shift coefficient of 0.34nm/degrees C. For 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mW with GOD-free thermal roll-over characteristics is obtained.

Criterion of aerodynamic performance of large-scale offshore horizontal axis wind turbines

With the background of offshore wind energy projects, this paper studies aerodynamic performance and geometric characteristics of large capacity wind turbine rotors ( 1 to 10 MW), and the main characteristic parameters such as the rated wind speed, blade tip speed, and rotor solidity. We show that the essential criterion of a high-performance wind turbine is a highest possible annual usable energy pattern factor and a smallest possible dimension, capturing the maximum wind energy and producing the maximum annual power. The influence of the above-mentioned three parameters on the pattern factor and rotor geometry of wind turbine operated in China's offshore meteorological environment is investigated. The variation patterns of aerodynamic and geometric parameters are obtained, analyzed, and compared with each other. The present method for aerodynamic analysis and its results can form a basis for evaluating aerodynamic performance of large-scale offshore wind turbine rotors.

Microstructure and mechanical properties of high performance Mg-Gd based alloys

The Mg-12Gd-4Y-2Nd-0.3Zn-0.6Zr (wt.%) alloy was prepared by casting technology, and the structure, age hardening behavior and mechanical properties of the alloy have been investigated. The results demonstrated that the alloy was composed of alpha-Mg matrix, a lot of dispersed Mg24RE5 (RE = Gd/Y/Nd) and Mg5RE precipitates in the as-cast and the T6 state alloys. The alloy exhibited remarkable age hardening response and excellent mechanical properties from room temperature (RT) to 300 degrees C by optimum solid solution and aging conditions. The ultimate tensile strength.