Search for signature inversion in the pi i(13/2) circle times upsilon i1(3/2) bands in Au-182,Au-184,Au-186

Search for low-spin signature inversion in the pi i(13/2) circle times nu i(13/2) bands in odd-odd Au-182,Au-184,Au-186 has been conducted through the standard in-beam gamma-spectroscopy techniques. The experiments for Au-182 and 186Au have been performed in the Japan Atomic Energy Agency (JAEA) via the Sm-152(Cl-35,5n)Au-182 and Yb-172(F-19,5n)Au-186 reactions, respectively. A study of Au-184 has been made using a multi-detector array GASP in LNL, Italy, via the Tb-159(Si-29,4n)Au-184 reaction. The pi i(13/2) circle times nu i(13/2) bands in these three nuclei have been identified and extended up to high-spin states. In particular, the inter-band connection between the pi i(13/2) nu i(13/2) band and the ground-state band in 184 Au has been established, leading to a firm spin-and-parity assignment for the pi i(13/2) circle times nu i(13/2) band. The low-spin signature inversion is found in the pi i(13/2) circle times nu i(13/2) bands in Au-182,Au-184,Au-186 according to our spin-assignment and the signature crossing observed at high-spin states.

Identification of a new band and its signature inversion in Re-174

High spin states in Re-174 are investigated via the Sm-152(Al-27, 5n gamma)Re-174 reaction and gamma-gamma coincidence relationships are analysed carefully. A new band is identified due to its spectroscopic connection with the known pi 1/2(-)[541] circle times nu 1/2(-)[521] band. This band is proposed to be the ground-state band built on the pi 1/2(-)[541] circle times nu 5/2(-)[512] configuration in view of the low-lying intrinsic states in the neighbouring odd-mass nuclei. It is of particular interesting that the new band exhibits a phenomenon of low-spin signature inversion, providing a new situation for theoretical investigations.

Search for signature inversion in the pi i(13/2)circle times nu i(13/2) bands in Au-182,Au-184,Au-186

Search for low-spin signature inversion in the pi i(13/2) circle times nu i(13/2) bands in odd-odd Au-182,Au-184,Au-186 has been conducted through the standard in-beam gamma-spectroscopy techniques via the Sm-152(Cl-35,5n) Au-182, Yb-172(F-19,5n) (186)An, and Tb-159(Si-29,4n) (184)An reactions, respectively. The pi i(13/2) circle times nu i(13/2) bands in these three nuclei have been identified and extended up to high-spin states. In particular, the inter-band connection between the pi i(13/2) circle times nu i(13/2) band and the ground-state band in Au-184 has been established, leading to a firm spin-and-parity assignment for the pi i(13/2) circle times nu i(13/2) band. The low-spin signature inversion is found in the pi i(13/2) circle times nu i(13/2) bands according to our spin-assignment and-the signature crossing observed at high-spin states.

Low-spin signature inversion in the pi h(9/2)circle times nu i(13/2) oblate band

Excited states in Tl-188,Tl-190 have been studied experimentally by means of in-beam gamma spectroscopy techniques, and resulted in the identification of a strongly coupled band based on the pi h(9/2) circle times nu i(13/2) configuration with oblate deformation. The oblate band in doubly odd Tl nuclei shows low-spin signature inversion. It is the first experimental observation of low-spin signature inversion for a band associated with the oblate pi h(9/2) circle times nu i(13/2) configuration.

Signature inversion in pi h(9/2) circle times nu i(13/2) oblate band of Tl-188

High-spin Level structure of Tl-188 has been studied via Gd-157 (Cl-35,4n) fusion-evaporation reaction at beam energy of 170MeV. A rotational band built on the pi h(9/2) circle times nu i(13/2) configuration with oblate deformation has been established. Spin values have been proposed to the pi h(9/2) circle times nu i(13/2) oblate band based on the similarities between the oblate band of Tl-188 and those in odd-odd Tl190-200. With the spin assignments, the low-spin signature inversion has been revealed for the pi h(9/2) circle times nu i(13/2) oblate band of Tl-188. The low-spin signature inversion can be interpreted qualitatively in the framework of the quasi-particles plus rotor model including a J dependent p-n residual interaction.

vertical growth of thalassia testudinum seasonal and interannual variability

The vertical growth of shoots of the seagrass Thalassia testudinum Banks ex Konig in four meadows, along a range of exposure to waves, in the Mexican Caribbean was examined to elucidate its magnitude and its relationship to sediment dynamics. Average internodal length varied between 0.17 and 12.75 mm, and was greatest in the meadow which experienced the greatest burial by sand waves moved by Hurricane Gilbert (September 1988). Internodal length showed annual cycles, confirmed by the flower scars always preceding or coinciding with the annual minimum internodal length. These annual cycles on the shoot allowed estimation of annual leaf production, which varied, on average, between 14.2 and 19.3 leaves per shoot year-1. High vertical shoot growth was associated with long internodes and high leaf production rate, which increased with increasing vertical shoot growth to a maximum of approximately 25 leaves per shoot year-1, with vertical growth of about 30 mm year-1 or more. Average internodal length showed substantial interannual differences from perturbations derived from the passage of Hurricane Gilbert. The growth response of the plants surviving moderate burial and erosion after the hurricane involved enhanced vertical growth and increased leaf production, and reduced vertical growth, respectively, after 1988. The variability in shoot vertical growth of T testudinum can be separated into seasonal changes in plant growth, and long-term variability associated with episodic perturbations involving sediment redistribution by hurricanes.

Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine

In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. A hole-type organic semiconductor N,N-'-diphentyl-N,N-'-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. In the permeable-base transistors, the metal base was formed by firstly coevaporating Al and Ca in vacuum and then annealing at 120 degrees C for 5 min in air, followed by a thin Al deposition. These devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270.

Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics

In this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation.

Colloidal crystal heterostructures by a two-step vertical deposition method

A two-step template-induced vertical deposition technique was introduced to fabricate the colloidal crystal heterostructures due to wettability differences and spatial confinement of the templates structured with microchannels. The heterostructures exhibited a bi-frequency Bragg diffraction whose position was determined by the microsphere diameter of the opals. It was demonstrated that the channel width had an influence on the optical properties of the colloidal crystal heterostructures. The strategy proposed is suited for fabrication of different micron-sized opal architectures with complex form and designed optical functionality.