949 resultados para tandem solar cell
Resumo:
The behavior of quantum dot, quantum wire, and quantum well InAs/GaAs solar cells is studied with a very simplified model based on experimental results in order to assess their performance as a function of the low bandgap material volume fraction fLOW. The efficiency of structured devices is found to exceed the efficiency of a non-structured GaAs cell, in particular under concentration, when fLOW is high; this condition is easier to achieve with quantum wells. If three different quasi Fermi levels appear with quantum dots the efficiency can be much higher.
Resumo:
Production of back contact solar cells requires holes generations on the wafers to keep both positive and negative contacts on the back side of the cell. This drilling process weakens the wafer mechanically due to the presence of the holes and the damage introduced during the process as microcracks. In this study, several chemical processes have been applied to drilled wafers in order to eliminate or reduce the damage generated during this fabrication step. The treatments analyzed are the followings: alkaline etching during 1, 3 and 5 minutes, acid etching for 2 and 4 minutes and texturisation. To determine mechanical strength of the samples a common mechanical study has been carried out testing the samples by the Ring on Ring bending test and obtaining the stress state in the moment of failure by FE simulation. Finally the results obtained for each treatment were fitted to a three parameter Weibull distribution
Resumo:
Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.
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We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80–90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction.
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The Europe-Japan Collaborative Research Project on Concentrator Photovoltaics (CPV) has been initiated under support by the EC (European Commission) and NEDO (New Energy and Industrial Technology Development Organization) since June 2011. This is project (NGCPV Project; a New Generation of Concentrator PhotoVoltaic cells, modules and systems) is aiming to accelerate the move to very high efficiency and lower cost CPV technologies and to enhance widespread deployment of CPV systems. 7 organizations such as UPM, FhG-ISE Imperial College, BSQ, CEA-INES, ENEA, and PSE in Europe and 9 organizations such as TTI, Univ. Tokyo, AIST, Sharp Co. Daido Steel Co., Kobe Univ., Miyazaki Univ., Asahi Kasei Co., and Takano Co. participate in this project. The targets of this project are 1) to develop world-record efficiency CPV cells of more than 45%, 2) to develop world-record efficiency CPV modules of 35%, 3) to establish standard measurements of CPV cells and modules, 4) to install 50kW CPV system in Spain, to carry out field test of CPV system and to manage power generation of CPV systems, and 5) to develop high-efficiency and low-cost new materials and structure cells such as III-V-N, III-V-on-Si tandem, quantum dots and wells. This paper presents outline of this project and most recent results such as world record efficiency (37.9% under 1-sun) cell and high-efficiency (43.5% under 240-306 suns) concentrator cell with inverted epitaxial grown InGaP/GaAs/InGaAs 3-junction solar cells.
Resumo:
We present a practical implementation of a solar thermophotovoltaic (TPV) system. The system presented in this paper comprises a sunlight concentrator system, a cylindrical cup-shaped absorber/emitter (made of tungsten coated with HfO2), and an hexagonal-shaped water-cooled TPV generator comprising 24 germanium TPV cells, which is surrounding the cylindrical absorber/emitter. This paper focuses on the development of shingled TPV cell arrays, the characterization of the sunlight concentrator system, the estimation of the temperature achieved by the cylindrical emitters operated under concentrated sunlight, and the evaluation of the full system performance under real outdoor irradiance conditions. From the system characterization, we have measured short-circuit current densities up to 0.95 A/cm2, electric power densities of 67 mW/cm2, and a global conversion efficiency of about 0.8%. To our knowledge, this is the first overall solar-to-electricity efficiency reported for a complete solar thermophotovoltaic system. The very low efficiency is mainly due to the overheating of the cells (up to 120 °C) and to the high optical concentrator losses, which prevent the achievement of the optimum emitter temperature. The loss analysis shows that by improving both aspects, efficiencies above 5% could be achievable in the very short term and efficiencies above 10% could be achieved with further improvements.
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n this paper, we present a theoretical model based on the detailed balance theory of solar thermophotovoltaic systems comprising multijunction photovoltaic cells, a sunlight concentrator and spectrally selective surfaces. The full system has been defined by means of 2n + 8 variables (being n the number of sub-cells of the multijunction cell). These variables are as follows: the sunlight concentration factor, the absorber cut-off energy, the emitter-to-absorber area ratio, the emitter cut-off energy, the band-gap energy(ies) and voltage(s) of the sub-cells, the reflectivity of the cells' back-side reflector, the emitter-to-cell and cell-to-cell view factors and the emitter-to-cell area ratio. We have used this model for carrying out a multi-variable system optimization by means of a multidimensional direct-search algorithm. This analysis allows to find the set of system variables whose combined effects results in the maximum overall system efficiency. From this analysis, we have seen that multijunction cells are excellent candidates to enhance the system efficiency and the electrical power density. Particularly, multijunction cells report great benefits for systems with a notable presence of optical losses, which are unavoidable in practical systems. Also, we have seen that the use of spectrally selective absorbers, rather than black-body absorbers, allows to achieve higher system efficiencies for both lower concentration and lower emitter-to-absorber area ratio. Finally, we have seen that sun-to-electricity conversion efficiencies above 30% and electrical power densities above 50 W/cm2 are achievable for this kind of systems.
Resumo:
Several attempts have been carried out to manufacture intermediate band solar cells (IBSC) by means of quantum dot (QD) superlattices. This novel photovoltaic concept allows the collection of a wider range of the sunlight spectrum in order to provide higher cell photocurrent while maintaining the open-circuit voltage (VOC) of the cell. In this work, we analyze InAs/GaAsN QD-IBSCs. In these cells, the dilute nitrogen in the barrier plays an important role for the strain-balance (SB) of the QD layer region that would otherwise create dislocations under the effect of the accumulated strain. The introduction of GaAsN SB layers allows increasing the light absorption in the QD region by multi-stacking more than 100 QD layers. The photo-generated current density (JL) versus VOC was measured under varied concentrated light intensity and temperature. We found that the VOC of the cell at 20 K is limited by the bandgap of the GaAsN barriers, which has important consequences regarding IBSC bandgap engineering that are also discussed in this work.
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Silicon wafers comprise approximately 40% of crystalline silicon module cost, and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. To accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.
Resumo:
In the thin-film photovoltaic industry, to achieve a high light scattering in one or more of the cell interfaces is one of the strategies that allow an enhancement of light absorption inside the cell and, therefore, a better device behavior and efficiency. Although chemical etching is the standard method to texture surfaces for that scattering improvement, laser light has shown as a new way for texturizing different materials, maintaining a good control of the final topography with a unique, clean, and quite precise process. In this work AZO films with different texture parameters are fabricated. The typical parameters used to characterize them, as the root mean square roughness or the haze factor, are discussed and, for deeper understanding of the scattering mechanisms, the light behavior in the films is simulated using a finite element method code. This method gives information about the light intensity in each point of the system, allowing the precise characterization of the scattering behavior near the film surface, and it can be used as well to calculate a simulated haze factor that can be compared with experimental measurements. A discussion of the validation of the numerical code, based in a comprehensive comparison with experimental data is included.
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A procedure for measuring the overheating temperature (ΔT ) of a p-n junction area in the structure of photovoltaic (PV) cells converting laser or solar radiations relative to the ambient temperature has been proposed for the conditions of connecting to an electric load. The basis of the procedure is the measurement of the open-circuit voltage (VO C ) during the initial time period after the fast disconnection of the external resistive load. The simultaneous temperature control on an external heated part of a PV module gives the means for determining the value of VO C at ambient temperature. Comparing it with that measured after switching OFF the load makes the calculation of ΔT possible. Calibration data on the VO C = f(T ) dependences for single-junction AlGaAs/GaAs and triple-junction InGaP/GaAs/Ge PV cells are presented. The temperature dynamics in the PV cells has been determined under flash illumination and during fast commutation of the load. Temperature measurements were taken in two cases: converting continuous laser power by single-junction cells and converting solar power by triple-junction cells operating in the concentrator modules.
Resumo:
A gene, qid74, of mycoparasitic filamentous fungus Trichoderma harzianum and its allies encodes a cell wall protein that is induced by replacing glucose in the culture medium with chitin (simulated mycoparasitism conditions). Because no trace of this gene can be detected in related species such as Gibberella fujikuroi and Saccharomyces cerevisiae, the qid74 gene appears to have arisen de novo within the genus Trichoderma. Qid74 protein, 687 residues long, is now seen as highly conserved tandem repeats of the 59-residue-long unit. This unit itself, however, may have arisen as tandem repeats of the shorter 13-residue-long basic unit. Within the genus Trichoderma, the amino acid sequence of Qid74 proteins has been conserved in toto. The most striking is the fact that Qid74 shares 25.3% sequence identity with the carboxyl-terminal half of the 1,572-residue-long BR3 protein of the dipteran insect Chironomus tentans. BR3 protein is secreted by the salivary gland of each aquatic larva of Chironomus to form a tube to house itself. Furthermore, the consensus sequence derived from these 59-residue-long repeating units resembles those of epidermal growth factor-like domains found in divergent invertebrate and vertebrate proteins as to the positions of critical cysteine residues and homology of residues surrounding these cysteines.
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Integrins are major two-way signaling receptors responsible for the attachment of cells to the extracellular matrix and for cell-cell interactions that underlie immune responses, tumor metastasis, and progression of atherosclerosis and thrombosis. We report the structure-function analysis of the cytoplasmic tail of integrin beta 3 (glycoprotein IIla) based on the cellular import of synthetic peptide analogs of this region. Among the four overlapping cell-permeable peptides, only the peptide carrying residues 747-762 of the carboxyl-terminal segment of integrin beta 3 inhibited adhesion of human erythroleukemia (HEL) cells and of human endothelial cells (ECV) 304 to immobilized fibrinogen mediated by integrin beta 3 heterodimers, alpha IIb beta 3, and alpha v beta 3, respectively. Inhibition of adhesion was integrin-specific because the cell-permeable beta 3 peptide (residues 747-762) did not inhibit adhesion of human fibroblasts mediated by integrin beta 1 heterodimers. Conversely, a cell-permeable peptide representing homologous portion of the integrin beta 1 cytoplasmic tail (residues 788-803) inhibited adhesion of human fibroblasts, whereas it was without effect on adhesion of HEL or ECV 304 cells. The cell-permeable integrin beta 3 peptide (residues 747-762) carrying a known loss-of-function mutation (Ser752Pro) responsible for the genetic disorder Glanzmann thrombasthenia Paris I did not inhibit cell adhesion of HEL or ECV 304 cells, whereas the beta 3 peptide carrying a Ser752Ala mutation was inhibitory. Although Ser752 is not essential, Tyr747 and Tyr759 form a functionally active tandem because conservative mutations Tyr747Phe or Tyr759Phe resulted in a nonfunctional cell permeable integrin beta 3 peptide. We propose that the carboxyl-terminal segment of the integrin beta 3 cytoplasmic tail spanning residues 747-762 constitutes a major intracellular cell adhesion regulatory domain (CARD) that modulates the interaction of integrin beta 3-expressing cells with immobilized fibrinogen. Import of cell-permeable peptides carrying this domain results in inhibition "from within" of the adhesive function of these integrins.
Resumo:
To investigate the role of nucleotide excision repair (NER) in the cellular processing of carcinogenic DNA photoproducts induced by defined, environmentally relevant portions of the solar wavelength spectrum, we have determined the mutagenic specificity of simulated sunlight (310-1100 nm), UVA (350-400 nm), and UVB (290-320 nm), as well as of the "nonsolar" model mutagen 254-nm UVC, at the adenine phosphoribosyltransferase (aprt) locus in NER-deficient (ERCC1) Chinese hamster ovary (CHO) cells. The frequency distributions of mutational classes induced by UVB and by simulated sunlight in repair-deficient CHO cells were virtually identical, each showing a marked increase in tandem CC-->TT transitions relative to NER-proficient cells. A striking increase in CC-->TT events was also previously documented for mutated p53 tumor-suppressor genes from nonmelanoma tumors of NER-deficient, skin cancer-prone xeroderma pigmentosum patients, compared to normal individuals. The data therefore indicate that the aprt gene in NER-deficient cultured rodent cells irradiated with artificial solar light generates the same distinctive "fingerprint" for sunlight mutagenesis as the p53 locus in NER-deficient humans exposed to natural sunlight in vivo. Moreover, in strong contrast to the situation for repair-component CHO cells, where a significant role for UVA was previously noted, the mutagenic specificity of simulated sunlight in NER-deficient CHO cells and of natural sunlight in humans afflicted with xeroderma pigmentosum can be entirely accounted for by the UVB portion of the solar wavelength spectrum.
Resumo:
Conditional oncogene expression in transgenic mice is of interest for studying the oncoprotein requirements during tumorigenesis and for deriving cell lines that can be induced to undergo growth arrest and enhance their differentiated functions. We utilized the bacterial tetracycline (Tet)-resistance operon regulatory system (tet) from Tn10 of Escherichia coli to control simian virus 40 (SV40) large tumor (T) antigen (TAg) gene expression and to generate conditionally transformed pancreatic beta cells in transgenic mice. A fusion protein containing the tet repressor (tetR) and the activating domain of the herpes simplex virus protein VP16, which converts the repressor into a transcription activator, was produced in beta cells of transgenic mice under control of the insulin promoter. In a separate lineage of transgenic mice, the TAg gene was introduced under control of a tandem array of tet operator sequences and a minimal promoter, which by itself is not sufficient for gene expression. Mice from the two lineages were then crossed to generate double-transgenic mice. Expression of the tetR fusion protein in beta cells activated TAg transcription, resulting in the development of beta-cell tumors. Tumors arising in the absence of Tet were cultured to derive a stable beta-cell line. Cell incubation in the presence of Tet led to inhibition of proliferation, as shown by decreased BrdUrd and [3H]thymidine incorporation. The Tet derivative anhydrotetracycline showed a 100-fold stronger inhibition compared with Tet. When administered in vivo, Tet efficiently inhibited beta-cell proliferation. These findings indicate that transformed beta cells selected for growth during a tumorigenesis process in vivo maintain a dependence on the continuous presence of the TAg oncoprotein for their proliferation. This system provides an approach for generation of beta-cell lines for cell therapy of diabetes as well as conditionally transformed cell lines from other cell types of interest.