Biomolecule storage on non-modified thermoplastic microfluidic chip by ink-jet printing of ionogels

[EN] This paper reports an innovative technique for reagents storage in microfluidic devices by means of a one-step UV-photoprintable ionogel-based microarray on non-modified polymeric substrates. Although the ionogel and the ink-jet printing technology are well published, this is the first study where both are used for long-term reagent storage in lab-on-a-chip devices. This technology for reagent storage is perfectly compatible with mass production fabrication processes since pre-treatment of the device substrate is not necessary and inkjet printing allows for an efficient reagent deposition process. The functionality of this microarray is demonstrated by testing the release of biotin-647 after being stored for 1 month at room temperature. Analysis of the fluorescence of the ionogel-based microarray that contains biotin-647 demonstrated that 90% of the biotin-647 present was released from the ionogel-based microarray after pumping PBS 0.1% Tween at 37 °C. Moreover, the activity of biotin-647 after being released from the ionogel-based microarray was investigated trough the binding capability of this biotin to a microcontact printed chip surface with avidin. These findings pave the way for a novel, one-step, cheap and mass production on-chip reagents storage method applicable to other reagents such as antibodies and proteins and enzymes.

Modular integration and on-chip sensing approaches for tunable fluid control polymer microdevices

228 p.

Caracterização de um sistema digital de aquisição de imagens radiográficas utilizando nêutrons térmicos e raios gama para a inspeção de componentes mecânicos.

Ensaio não destrutivo é uma ferramenta essencial quando um equipamento, dispositivo ou componente não pode ser submetido a procedimentos destrutivos ou invasivos devido a razões de segurança, alto custo ou outras restrições físicas ou logísticas. Dentro deste quadro radiografias por transmissão com raios gama e nêutrons térmicos são técnicas singulares para inspecionar um objeto e desvendar sua estrutura interna devido à capacidade de atravessar uma vasta gama de materiais utilizados na indústria. Grosso modo, raios gama são mais atenuados por materiais pesados enquanto nêutrons térmicos são mais atenuados por materiais mais leves, tornando-as ferramentas complementares. Este trabalho apresenta os resultados obtidos na inspeção de vários componentes mecânicos, através da radiografia por transmissão com nêutrons térmicos e raios gama. O fluxo de nêutrons térmicos de 4,46x105 n.cm-2.s-1 disponível no canal principal do reator de pesquisa Argonauta do Instituto de Engenharia Nuclear foi usado como fonte para as imagens radiográficas com nêutrons. Raios dekeV emitidos pelo 198Au, também produzido no reator, foram usados como fonte de radiação para radiografias . Imaging Plates, especificamente produzidos para operar com nêutrons térmicos ou com raios X, foram empregados como detectores e dispositivos de armazenamento e captação de imagens para cada uma dessas radiações. Esses dispositivos exibem varias vantagens quando comparados ao filme radiográfico convencional. Com efeito, além de maior sensibilidade e serem reutilizáveis não são necessários câmaras escuras e processamento químico para a revelação. Em vez disso, ele é lido por um feixe de laser que libera elétrons armadilhados na rede cristalina durante a exposição à radiação, fornecendo uma imagem final digital. O desempenho de ambos os sistemas de aquisição de imagens, assim constituído, foi avaliado com respeito à sensibilidade, resolução espacial, linearidade e range dinâmico, incluído uma comparação com sistemas radiográficos com nêutrons empregando filmes e folhas de gadolínio como conversor de nêutrons em partículas carregadas. Além desta caracterização, diversos equipamentos e componentes foram radiografados com ambos os sistemas visando-se avaliar suas capacidades de desvendar a estrutura interna desses objetos e detectar estruturas e estados anormais. Dentro desta abordagem, uma neutrongrafia detectou a presença de material cerâmico remanescente empregado como molde no processo de fabricação nos canais de refrigeração de uma aleta do estator de uma turbina tipo turbo-fan, que deveria estar livre desse material. O reostato danificado de um sensor de pressão automotivo, foi identificado por neutrongrafia, embora nesse caso a radiografia também conseguiu realizar essa tarefa com melhor resolução, corroborando assim as curvas de resolução espacial obtidas na caracterização dos dois sistemas. A homogeneidade da distribuição do material encapsulado em uma gaxeta explosiva de chumbo utilizada na indústria aeroespacial foi igualmente verificada por neutrongrafia porque esse metal é relativamente transparente para nêutrons, mas suficientemente opaco para o explosivo rico em hidrogênio. Diversos outros instrumentos e componentes tais como variômetro, altímetro, bússola aeronáutica, injetor automotivo de combustível, foto-camera, disco rígido de computador, motor de passo, conectores eletrônicos e projéteis foram radiografados com ambos os sistemas visando avaliar suas habilidades em desvendar diferentes peculiaridades em função do agente interrogador.

Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.

On-chip deposition of carbon nanotubes using CMOS microhotplates.

The direct deposition of carbon nanotubes on CMOS microhotplates is demonstrated in this paper. Tungsten microhotplates, fabricated on thin SOI membranes aside CMOS control circuitry, are used to locally grow carbon nanotubes by chemical vapour deposition. Unlike bulk heating of the entire chip, which could cause degradation to CMOS devices and interconnects due to high growth temperatures in excess of 500 °C, this novel technique allows carbon nanotubes to be grown on-chip in localized regions. The microfabricated heaters are thermally isolated from the rest of the CMOS chip as they are on the membranes. This allows carbon nanotubes to be grown alongside CMOS circuitry on the same wafer without any external heating, thus enabling new applications (e.g. smart gas sensing) where the integration of CMOS and carbon nanotubes is required.

Millisecond processing beyond chip technology: From electronics to photonics

There is a clear and increasing interest in short time annealing processing far below one second, i.e. the lower limit of Rapid Thermal Processing (RTP) called spike annealing. This was driven by the need of suppressing the so-called Transient Enhanced Diffusion in advanced boronimplanted shallow pn-junctions in silicon technology. Meanwhile the interest in flash lamp annealing (FLA) in the millisecond range spread out into other fields related to silicon technology and beyond. This paper reports on recent experiments regarding shallow junction engineering in germanium, annealing of ITO layers on glass and plastic foil to form an conductive layer as well as investigations which we did during the last years in the field of wide band gap semiconductor materials (SiC, ZnO). A more common feature evolving from our work was related to the modeling of wafer stress during millisecond thermal processing with flash lamps. Finally recent achievements in the field of silicon-based light emission basing on Metal-Oxide-Semiconductor Light Emitting Devices will be reported. © 2007 IEEE.

ZnO thin film surface acoustic wave based lab-on-a-chip

Lab-on-a-chip (LOC) is one of the most important microsystem applications with promise for use in microanalysis, drug development, diagnosis of illness and diseases etc. LOC typically consists of two main components: microfluidics and sensors. Integration of microfluidics and sensors on a single chip can greatly enhance the efficiency of biochemical reactions and the sensitivity of detection, increase the reaction/detection speed, and reduce the potential cross-contamination, fabrication time and cost etc. However, the mechanisms generally used for microfluidics and sensors are different, making the integration of the two main components complicated and increases the cost of the systems. A lab-on-a-chip system based on a single surface acoustic wave (SAW) actuation mechanism is proposed. SAW devices were fabricated on nanocrystalline ZnO thin films deposited on Si substrates using sputtering. Coupling of acoustic waves into a liquid induces acoustic streaming and motion of droplets. A streaming velocity up to ∼ 5cm/s and droplet pumping speeds of ∼lcm/s were obtained. It was also found that a higher order mode wave, the Sezawa wave is more effective in streaming and transportation of microdroplets. The ZnO SAW sensor has been used for prostate antigen/antibody biorecognition systems, demonstrated the feasibility of using a single actuation mechanism for lab-on-a-chip applications. © 2010 Materials Research Society.

FPGA, physics-based modeling of IGBT and pin diode for hardware co-simulation of complex power electronic converters and systems

This paper presents the steps and the challenges for implementing analytical, physics-based models for the insulated gate bipolar transistor (IGBT) and the PIN diode in hardware and more specifically in field programmable gate arrays (FPGAs). The models can be utilised in hardware co-simulation of complex power electronic converters and entire power systems in order to reduce the simulation time without compromising the accuracy of results. Such a co-simulation allows reliable prediction of the system's performance as well as accurate investigation of the power devices' behaviour during operation. Ultimately, this will allow application-specific optimisation of the devices' structure, circuit topologies as well as enhancement of the control and/or protection schemes.

Towards a fast electro-thermo-mechanical IGBT/Diode simulation framework for design of reliable power electronic converters

This paper describes a methodology that enables fast and reasonably accurate prediction of the reliability of power electronic modules featuring IGBTs and p-i-n diodes, by taking into account thermo-mechanical failure mechanisms of the devices and their associated packaging. In brief, the proposed simulation framework performs two main tasks which are tightly linked together: (i) the generation of the power devices' transient thermal response for realistic long load cycles and (ii) the prediction of the power modules' lifetime based on the obtained temperature profiles. In doing so the first task employs compact, physics-based device models, power losses lookup tables and polynomials and combined material-failure and thermal modelling, while the second task uses advanced reliability tests for failure mode and time-to-failure estimation. The proposed technique is intended to be utilised as a design/optimisation tool for reliable power electronic converters, since it allows easy and fast investigation of the effects that changes in circuit topology or devices' characteristics and packaging have on the reliability of the employed power electronic modules. © 2012 IEEE.

Characterization and fabrication of zinc oxide nanowire devices

In this paper, we demonstrate an approach for the local synthesis of ZnO nanowires (ZnO NWs) and the potential for such structures to be incorporated into device applications. Three network ZnO NW devices are fabricated on a chip by using a bottom-up synthesis approach. Microheaters (defined by standard semiconductor processing) are used to synthesize the ZnO NWs under a zinc nitrate (Zn(NO3)2·6H2O) and hexamethylenetetramine (HMTA, (CH2)6·N4) solution. By controlling synthesis parameters, varying densities of networked ZnO NWs are locally synthesized on the chip. The fabricated networked ZnO NW devices are then characterized using UV excitation and cyclic voltammetry (CV) experiments to measure their photoresponse and electrochemical properties. The experimental results show that the techniques and material systems presented here have the potential to address interesting device applications using fabrication methods that are fully compatible with standard semiconductor processing. © 2013 IEEE.

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵ cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Computational engineering design for micro-scale combustion devices: A thermally improved configuration

A multi-objective design optimisation study has been carried out with the objectives to improve the overall efficiency of the device and to reduce the fuel consumption for the proposed micro-scale combustor design configuration. In a previous study we identified the topology of the combustion chamber that produced improved behaviour of the device in terms of the above design criteria. We now extend our design approach, and we propose a new configuration by the addition of a micro-cooling channel that will improve the thermal behaviour of the design as previously suggested in literature. Our initial numerical results revealed an improvement of 2.6% in the combustion efficiency when we applied the micro-cooling channel to an optimum design configuration we identified from our earlier multi-objective optimisation study, and under the same operating conditions. The computational modelling of the combustion process is implemented in the commercial computational fluid dynamics package ANSYS-CFX using Finite Rate Chemistry and a single step hydrogen-air reaction. With this model we try to balance good accuracy of the combustion solution and at the same time practicality within the context of an optimisation process. The whole design system comprises also the ANSYS-ICEM CFD package for the automatic geometry and mesh generation and the Multi-Objective Tabu Search algorithm for the design space exploration. We model the design problem with 5 geometrical parameters and 3 operational parameters subject to 5 design constraints that secure practicality and feasibility of the new optimum design configurations. The final results demonstrate the reliability and efficiency of the developed computational design system and most importantly we assess the practicality and manufacturability of the revealed optimum design configurations of micro-combustor devices. Copyright © 2013 by ASME.

Direct temperature mapping of nanoscale plasmonic devices.

Side by side with the great advantages of plasmonics in nanoscale light confinement, the inevitable ohmic loss results in significant joule heating in plasmonic devices. Therefore, understanding optical-induced heat generation and heat transport in integrated on-chip plasmonic devices is of major importance. Specifically, there is a need for in situ visualization of electromagnetic induced thermal energy distribution with high spatial resolution. This paper studies the heat distribution in silicon plasmonic nanotips. Light is coupled to the plasmonic nanotips from a silicon nanowaveguide that is integrated with the tip on chip. Heat is generated by light absorption in the metal surrounding the silicon nanotip. The steady-state thermal distribution is studied numerically and measured experimentally using the approach of scanning thermal microscopy. It is shown that following the nanoscale heat generation by a 10 mW light source within a silicon photonic waveguide the temperature in the region of the nanotip is increased by ∼ 15 °C compared with the ambient temperature. Furthermore, we also perform a numerical study of the dynamics of the heat transport. Given the nanoscale dimensions of the structure, significant heating is expected to occur within the time frame of picoseconds. The capability of measuring temperature distribution of plasmonic structures at the nanoscale is shown to be a powerful tool and may be used in future applications related to thermal plasmonic applications such as control heating of liquids, thermal photovoltaic, nanochemistry, medicine, heat-assisted magnetic memories, and nanolithography.

Subwavelength plasmonics for graded-index optics on a chip.

Planar plasmonic devices are becoming attractive for myriad applications, owing to their potential compatibility with standard microelectronics technology and the capability for densely integrating a large variety of plasmonic devices on a chip. Mitigating the challenges of using plasmonics in on-chip configurations requires precise control over the properties of plasmonic modes, in particular their shape and size. Here we achieve this goal by demonstrating a planar plasmonic graded-index lens focusing surface plasmons propagating along the device. The plasmonic mode is manipulated by carving subwavelength features into a dielectric layer positioned on top of a uniform metal film, allowing the local effective index of the plasmonic mode to be controlled using a single binary lithographic step. Focusing and divergence of surface plasmons is demonstrated experimentally. The demonstrated approach can be used for manipulating the propagation of surface plasmons, e.g., for beam steering, splitting, cloaking, mode matching, and beam shaping applications.