Integrated traffic simulation model - phase I. Volume 4: revisions to the UTCS-1 traffic simulation model to enhance operational efficiency. Final report.

Federal Highway Administration, Washington, D.C.

Integrated traffic simulation model, phase, I. Volume 1: executive summary. Final report.

Federal Highway Administration, Washington, D.C.

Integrated traffic simulation model - phase I. Volume 2: design of the TRAF system (TOS). Final report.

Federal Highway Administration, Washington, D.C.

Integrated motorist information system (IMIS) feasibility and design study. Phase I: feasibility study. Volume 2 - appendices. Final report.

Federal Highway Administration, Office of Research and Development, Washington, D.C.

Integrated motorist information (IMIS) feasibility and design study. Phase II: generalized methodology for IMIS feasibility studies. Volume 2--validation and application of feasibility study handbook. Final report.

Federal Highway Administration, Office of Research and Development, Washington, D.C.

Calibration of three year old child dummies (phase II). Final report.

Mode of access: Internet.

Implementation cost to consumers of Part 581 - Bumper Standard, Phase II; weight and cost study of three "X" body bumper systems; and consumer replacement cost for complete bumper systems studied. Final report.

National Highway Traffic Safety Administration, Washington, D.C.

Integrated motorist information system (IMIS) feasibility and design study. Phase I: feasibility study. Volume 1 - final report.

Federal Highway Administration, Office of Research and Development, Washington, D.C.

Integrated motorist information system (IMIS) feasibility and design study. Phase I: feasibility study. Volume 3 - executive summary. Final report.

Federal Highway Administration, Office of Research and Development, Washington, D.C.

Integrated motorist information system (IMIS) feasibility and design study : phase 1 : feasibility /

Mode of access: Internet.

The study of multi-phase diffusion in three-component metallic systems

"This report was prepared by University of Florida, Gainesville, Florida, under USAF Contract no. F 33615-67-C-1227."

Phase diagram of the three-band half-filled Cu-O two-leg ladder

We determine the phase diagram of the half-filled two-leg ladder both at weak and strong coupling, taking into account the Cu d(x)(2)-y(2) and the O p(x) and p(y) orbitals. At weak coupling, renormalization group flows are interpreted with the use of bosonization. Two different models with and without outer oxygen orbitals are examined. For physical parameters, and in the absence of the outer oxygen orbitals, the D-Mott phase arises; a dimerized phase appears when the outer oxygen atoms are included. We show that the circulating current phase that preserves translational symmetry does not appear at weak coupling. In the opposite strong-coupling atomic limit the model is purely electrostatic and the ground states may be found by simple energy minimization. The phase diagram so obtained is compared to the weak-coupling one.

Chemical studies of plasma etchants used in integrated circuit manufacture

Plasma or "dry" etching is an essential process for the production of modern microelectronic circuits. However, despite intensive research, many aspects of the etch process are not fully understood. The results of studies of the plasma etching of Si and Si02 in fluorine-containing discharges, and the complementary technique of plasma polymerisation are presented in this thesis. Optical emission spectroscopy with argon actinometry was used as the principle plasma diagnostic. Statistical experimental design was used to model and compare Si and Si02 etch rates in CF4 and SF6 discharges as a function of flow, pressure and power. Etch mechanisms m both systems, including the potential reduction of Si etch rates in CF4 due to fluorocarbon polymer formation, are discussed. Si etch rates in CF4 /SF6 mixtures were successfully accounted for by the models produced. Si etch rates in CF4/C2F6 and CHF3 as a function of the addition of oxygen-containing additives (02, N20 and CO2) are shown to be consistent with a simple competition between F, 0 and CFx species for Si surface sites. For the range of conditions studied, Si02 etch rates were not dependent on F-atom concentration, but the presence of fluorine was essential in order to achieve significant etch rates. The influence of a wide range of electrode materials on the etch rate of Si and Si02 in CF4 and CF4 /02 plasmas was studied. It was found that the Si etch rate in a CF4 plasma was considerably enhanced, relative to an anodised aluminium electrode, in the presence of soda glass or sodium or potassium "doped" quartz. The effect was even more pronounced in a CF4 /02 discharge. In the latter system lead and copper electrodes also enhanced the Si etch rate. These results could not be accounted for by a corresponding rise in atomic fluorine concentration. Three possible etch enhancement mechanisms are discussed. Fluorocarbon polymer deposition was studied, both because of its relevance to etch mechanisms and its intrinsic interest, as a function of fluorocarbon source gas (CF4, C2F6, C3F8 and CHF3), process time, RF power and percentage hydrogen addition. Gas phase concentrations of F, H and CF2 were measured by optical emission spectroscopy, and the resultant polymer structure determined by X-ray photoelectron spectroscopy and infrared spectroscopy. Thermal and electrical properties were measured also. Hydrogen additions are shown to have a dominant role in determining deposition rate and polymer composition. A qualitative description of the polymer growth mechanism is presented which accounts for both changes in growth rate and structure, and leads to an empirical deposition rate model.

Phase dependent forward three wave amplification in photorefractive BSO

The results of three wave mixing experiments in photorefractive Bi12SiO20 are presented. The results confirm theoretical predictions that amplification by three wave mixing is strongly dependent on the phase relationship between the three beams at the input to the medium.

Phase dependent forward three wave amplification in photorefractive BSO

The results of three wave mixing experiments in photorefractive Bi12SiO20 are presented. The results confirm theoretical predictions that amplification by three wave mixing is strongly dependent on the phase relationship between the three beams at the input to the medium.