Novel Aspects of the Purpose-Built Materials Strategy: Evidence of Topographic Template Effect and Oriented Attachment Growth Mechanism

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electrochromic Switching Mechanism of Iron Hexacyanoferrates Molecular Compounds: The Role of Fe2+(CN)(6) Vacancies

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Study of the enthalpy-entropy mechanism from water sorption of orange seeds (C. sinensis cv. Brazilian) for the use of agro-industrial residues as a possible source of vegetable oil production

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Filmes finos de SrBi2Ta2O9 processados em forno microondas

Filmes finos de SrBi2Ta2O9 foram depositados em substratos de Pt/Ti/SiO2/Si e, pela primeira vez, sinterizados em forno microondas doméstico. Os padrões de difração de raios X mostraram que os filmes são policristalinos. O processamento por microondas permite utilizar baixa temperatura na síntese e obter filmes com boas propriedades elétricas. Ensaios de microscopia eletrônica de varredura (MEV) e de Força Atômica (MFA) revelam boa aderência entre filme e substrato, com microestrutura de superfície apresentando grãos finos e esféricos e rugosidade de 4,7 nm. A constante dielétrica e o fator de dissipação, para freqüência de 100 KHz, à temperatura ambiente, foram de 77 e 0,04, respectivamente. A polarização remanescente (2Pr) e o campo coercitivo (Ec) foram 1,04 miC/cm² e 33 kV/cm. O comportamento da densidade de corrente de fuga revela três mecanismos de condução: linear, ôhmico e outro mecanismo que pode ser atribuído à corrente de Schottky. Dos padrões de DRX, análises das imagens por MEV e topografia de superfície por MFA observa-se que 10 min de tratamento térmico a 550 ºC, em forno microondas, é tempo suficiente para se obter a cristalização do filme.

Study of the dielectric and ferroelectric properties of chemically processed BaxSr1-xTiO3 thin films

Polycrystalline BaxSr1-xTiO3 (x = 0.4 and 0.8) thin films with a perovskite structure were prepared by the polymeric precursor method on a platinum-coated silicon substrate. High-quality thin films with uniform composition and thickness were successfully produced by dip-coating and spin-coating techniques. The resulting thin films prepared by dip and spin-coating showed a well-developed dense polycrystalline structure with uniform grain size distribution. The metal-BST-metal structure of the thin films displays good dielectric and ferroelectric properties. The ferroelectric nature to BaxSr1-xTiO3 (x = 0.8) thin film, indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed 2P(r) = 5.0 muC/cm(2) and E-c = 20 kV/cm. The capacitance-frequency curve reveals that the dielectric constant may reach a value of up to 794 at 1 kHz. on the other hand, the BaxSr1-xTiO3 (x = 0.4) thin films had paraelectric nature and dielectric constant and the dissipation factor at a frequency of 100 kHz were 680 and 0.01, respectively, for film annealed at 700 degreesC. In addition, an examination of the film's I-V curve at room temperature revealed the presence of two conduction regions in the BaxSr1-xTiO3 (x = 0.4 and 0.8) thin films, showing ohmic-like behavior at low voltage and a Schottky-emission or Poole-Frenkel mechanism at high voltage. (C) 2001 Elsevier B.V. B.V. All rights reserved.

MECHANISM OF ACTION OF COBALT IONS ON RAT OSSEOUS PLATE ALKALINE-PHOSPHATASE

Polidocanol-solubilized osseous plate alkaline phosphatase was modulated by cobalt ions in a similar way as by magnesium ions. For concentrations up to 1 mu M, the Chelex-treated enzyme was stimulated by cobalt ions, showing K-d = 6.0 mu M, V = 977.5 U/mg, and site-site interactions (n = 2.5). Cobalt-enzyme was highly unstable at 37 degrees C, following a biphasic inactivation process with inactivation constants of about 0.0625 and 0.0015 min(-1). Cobalt ions stimulated the enzyme synergistically in the presence of magnesium ions (K-d = 5.0 mu M; V = 883.0 U/mg) or in the presence of zinc ions (K-d = 75.0 mu M; V = 1102 U/mg). A steady-state kinetic model for the modulation of enzyme activity by cobalt ions is proposed.

ac conductivity and conduction mechanism of NaNbO3 semiconductor antiferroelectric ceramic: A relaxational approach at high temperature

The electric properties of the sodium niobate perovskite ceramic were investigated by impedance spectroscopy in the frequency range from 5 Hz to 13 MHz and from room temperature up to 1073 K, in a thermal cycle. Both capacitance and conductivity exhibit an anomaly at around 600 K as a function of the temperature and frequency. The electric conductivity as a function of angular frequency sigma(omega) follows the relation sigma(omega)=Aomega(s). The values of the exponent s lie in the range 0.15less than or equal tosless than or equal to0.44. These results were discussed considering the conduction mechanism as being a type of polaron hopping. (C) 2003 American Institute of Physics.

Mechanism of the Yb-Er energy transfer in fluorozirconate glass

The mechanism of the Yb(3+)-->Er(3+) energy transfer as a function of the donor and the acceptor concentration was investigated in Yb(3+)-Er(3+) codoped fluorozirconate glass. The luminescence decay curves were measured and analyzed by monitoring the Er(3+)((4)I(11/2)) fluorescence induced by the Yb(3+)((2)F(5/2)) excitation. The energy transfer microparameters were determined and used to estimate the Yb-Er transfer rate of an energy transfer process assisted by excitation migration among donors state (diffusion model). The experimental transfer rates were determined from the best fitting of the acceptor luminescence decay obtained using a theoretical approach analog to that one used in the Inokuti-Hirayama model for the donor luminescence decay. The obtained values of transfer parameter gamma [gamma(exp)] were always higher than that predicted by the Inokuti-Hirayama model. Also, the experimental transfer rate, gamma(2)(exp), was observed to be higher than the transfer rate predicted by the migration model. Assuming a random distribution among excited donors at the initial time (t=0) and that a fast excitation migration, which occurs in a very short time (t

A molecular mechanism for Lys(49)-phospholipase A(2) activity based on ligand-induced conformational change

Agkistrodon contortrix laticinctus myotoxin is a Lys(49)- phospholipase A(2) (EC 3.1.1.4) isolated from the venom of the serpent A contortrix laticinctus (broad-banded copperhead). We present here three monomeric crystal structures of the myotoxin, obtained under different crystallization conditions. The three forms present notable structural differences and reveal that the presence of a ligand in the active site (naturally presumed to be a fatty acid) induces the exposure of a hydrophobic surface (the hydrophobic knuckle) toward the C terminus. The knuckle in A contortrix laticinctus myotoxin involves the side chains of Phe(121) and Phe(124) and is a consequence of the formation of a canonical structure for the main chain within the region of residues 118-125. Comparison with other Lys(49)-phospholipase A(2) myotoxins shows that although the knuckle is a generic structural motif common to all members of the family, it is not readily recognizable by simple sequence analyses. An activation mechanism is proposed that relates fatty acid retention at the active site to conformational changes within the C-terminal region, a part of the molecule that has long been associated with Ca2+-independent membrane damaging activity and myotoxicity. This provides, for the first time, a direct structural connection between the phospholipase active site and the C-terminal myotoxic site, justifying the otherwise enigmatic conservation of the residues of the former in supposedly catalytically inactive molecules.

Conductivity mechanism analysis at high temperature in bismuth titanate: A single crystal with sillenite-type structure

Conductivity behavior of the Bi12TiO20 single crystal was investigated by the electric modulus spectroscopy, which was carried out in the frequency range from 5 Hz to 13 MHz and at temperatures higher than 400 degrees C. The resistance curve exhibits a set of properties correlated to a negative temperature coefficient thermistor. In the temperature range investigated, the characteristic parameter (,8) of the thermistor is equal to 4834 degrees C. Temperature coefficients of the resistance (a) were derived being equal to -3.02 x 10(-2) degrees C-1 at 400 degrees C and equal to -9.86 x 10(-3) degrees C-1 at 700 degrees C. The nature of the electric relaxation phenomenon and magnitude dc conductivity are approached. (c) 2005 American Institute of Physics.

Mechanism of micronuclei formation in polyploidizated cells of Allium cepa exposed to trifluralin herbicide

The trifluralin is an agent that promotes a cellular damage due to its direct action on the microtubules. This action leads to a decontrol in the cellular division, bringing about polyploid cells. In this work, we show the evidences that the exceeding genetical material of theses polyploidizated cells tends to be eliminated from the nucleus in the form of micronucleus. Our analyses prove this fact, both by the presence of a number of cells carrying micronucleus, and by the evidences of the elimination of the exceeding material itself, after exposition of the Allium cepa root tips tested with several concentration of trifluralin herbicide. It was noticed that the residual concentration induced a number of polyploid cells, micronuclei and mini cells. Inferences about the implications of the elimination of genetic material from micronuclei, such as cell viability and apoptosis, are also presented. (c) 2007 Elsevier B.V. All rights reserved.

THEORY OF ELECTRICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER HAVING EXPONENTIALLY DISTRIBUTED IMPURITY STATES AND METAL-INSULATOR METAL STRUCTURES

The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an exponential distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We present analytical expressions for the electrical potential, field, thickness of depletion region, capacitance, and charge accumulated in the depletion region. We also discuss ln I versus V(ap) data. Finally, we compare the characteristics in three cases: (i) impurity states at only a single energy level; (ii) uniform energy distribution of impurity states; and (iii) exponential energy distribution of impurity states.In general, the electrical characteristics of Schottky barriers and metal-insulator-metal structures with Schottky barriers depend strongly on the energy distribution of impurity states.

THEORY OF NON-STEADY-STATE ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-METAL STRUCTURES WITH SCHOTTKY BARRIERS AND UNIFORMLY DISTRIBUTED INTERFACE IMPURITY STATES

The metal-insulator (or amorphous semiconductor) blocking contact is still not well understood. In the present paper, we discuss the non steady state characteristics of Metal-lnsulator-Metal Structure with non-intimate blocking contacts (i.e. Metal-Oxide-Insulator-Metal Structure). We consider a uniform distribution (in energy) of impurity states in addition to impurity states at a single energy level within the depletion region. We discuss thermal as well as isothermal characteristics and present expressions for the temperature of maximum current (T-m) and a method to calculate the density of uniformly distributed impurity states. The variation of mobility with electrical field has also been considered. Finally we plot the theoretical curves under different conditions. The present results are closing into available experimental results.

NEUTRAL CURRENTS AND GLASHOW-ILIOPOULOS-MAIANI MECHANISM IN SU(3)L-CIRCLE-TIMES-U(1)N MODELS FOR ELECTROWEAK INTERACTIONS

We study the Glashow-Iliopoulos-Maiani mechanism for flavor-changing neutral-current suppression in both the gauge and Higgs sectors, for models with SU(3)L X U(1)N gauge symmetry. The models differ from one another only with respect to the representation content. The main features of these models are that in order to cancel the triangle anomalies the number of families must be divisible by three (the number of colors) and that the lepton number is violated by some lepton-gauge bosons and lepton-scalar interactions.

Effect of Ta2O5 doping on the electrical properties of 0.99SnO(2)center dot 0.01CoO ceramic

The effect of Ta2O5 doping in 0.99SnO(2). 0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 mu m to 5.68 mu m when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film. (C) 2000 Kluwer Academic Publishers.